Fairchild Korea Semiconductor Ltd. Patent applications |
Patent application number | Title | Published |
20160135272 | Standby Current Supplier - Provided is a standby current supplier including a bleeding circuit electrically connected to a dimmer and through which a first current flowing to the dimmer flows when the dimmer is in an off state, and a first controller configured to detect a first voltage corresponding to an input voltage generated by the dimmer and control the bleeding circuit based on the first voltage when the first voltage is lower than a predetermined first level. | 05-12-2016 |
20160135265 | Control System for Phase-Cut Dimming - A phase-cut dimming control system according to the embodiment includes a phase angle detector configured to detect a phase angle of an input voltage generated by phase-cut dimming, a feedback signal generator configured to generate a first reference signal corresponding to the detected phase angle, and generate an initial feedback signal based on a detection signal corresponding to power supplied to a load and the first reference signal, a feedback signal modulator configured to modulate the initial feedback signal and generate a feedback signal, a power transmission controller configured to generate a control signal which controls power transmission according to the feedback signal, and a power transmission circuit configured to transmit power to the load according to the control signal. | 05-12-2016 |
20160006360 | POWER SUPPLY DEVICE - A power supply device according to the present invention includes: a filter capacitor coupled to a line to which an input voltage that is passed through a dimmer is supplied; a discharge switch coupled to the filter capacitor through the line; and a main switch receiving the input voltage and controlling power transmission. The power supply device performs input voltage control for shaping the input voltage with a predetermined pattern using the discharge switch. | 01-07-2016 |
20150381152 | BI-DIRECTIONAL TRANSMITTER/RECEIVER COMPRISING TEMPERATURE SENSOR AND DRIVING CIRCUIT COMPRISING THE SAME - A bi-directional transmitter/receiver according to an embodiment includes a pin connected with a main control circuit, a transistor connected with a first electrode to the pin, a Schmitt trigger which determines an output according to a voltage of the pin, and a temperature sensor which is connected to the pin and which senses temperature and outputs temperature information to the pin. A driving circuit for controlling switching operation of one or more switches includes a bi-directional transmitter/receiver. | 12-31-2015 |
20150326103 | SWITCH CONTROL CIRCUIT AND POWER SUPPLY DEVICE INCLUDING THE SAME - A switch control circuit includes a first pin connected to a first voltage, and a second pin connected to another end of a first resistor including an end connected to the first pin and a first capacitor. In the switch control circuit, at least two of first dead time information, second dead time information, and a protection mode are set by using a multi-voltage of the second pin. The first dead time information is information about a dead time of a first switch and a second switch controlling power supply, the second dead time information is information about a dead time for synchronous rectification, and the protection mode includes an auto-restart mode and a latch mode. | 11-12-2015 |
20140354167 | POWER SUPPLY APPARATUS AND DRIVING METHOD THEREOF - A power supply apparatus and a driving method thereof are disclosed | 12-04-2014 |
20140313803 | TRANSFORMERLESS DC/AC CONVERTER - A method for generating an AC power signal using a transformerless DC/AC converter includes energizing a first inductor circuitry from a DC input source by controlling first, second and third switches to couple the first inductor circuitry to the DC input source; de-energizing the first inductor circuitry by controlling the first, second and third switches to decouple the first inductor circuitry from the DC input source and couple the first inductor circuitry to an output node to generate, at least in part, a first half cycle of an AC power signal at the output node; energizing a second inductor circuitry from a DC input source by controlling fourth, fifth and sixth switches to couple the second inductor circuitry to the DC input source; and de-energizing the second inductor circuitry by controlling the fourth, fifth and sixth switches to decouple the second inductor circuitry from the DC input source and couple the second inductor circuitry to the output node to generate, at least in part, a second half cycle of the AC power signal at the output node. | 10-23-2014 |
20140286056 | SWITCH CONTROL CIRCUIT, POWER SUPPLY DEVICE COMPRISING THE SAME AND DRIVING METHOD OF THE POWER SUPPLY DEVICE - The invention relates to a switch control circuit, a power supply including the same, and a method for driving the power supply. The power supply includes: a first switch; a second switch coupled in series to the first switch; a transistor coupled to a node where the first switch and the second switch are coupled; a resonance capacitor coupled between the transformer and a primary side ground and to which a resonance current flows; a sense circuit generating a first sense voltage that depends on the resonance current when the resonance current is a positive current; and a switch control circuit detecting a zero voltage switching failure by sensing the resonance current using the first sense voltage at a turn-off time of the first switch for every switching cycle of the first and second switches. | 09-25-2014 |
20140273349 | Power Module Having Stacked Flip-Chip and Method for Fabricating the Power Module - Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. | 09-18-2014 |
20140268925 | SWITCH CONTROL CIRCUIT, SWITCH CONTROL METHOD AND POWER SUPPLY DEVICE USING THE SAME - Embodiment relates to a switch control circuit, a switch control method, and a power supply using the switch control circuit. The power supply supplies power to a load using an input voltage. The switch control circuit controls a switching operation of the power switch that controls the power supply. The switch control circuit detects a duty of the power switch using a signal for controlling the switching operation of the power switch, detects the load using the feedback voltage, and determines a short-circuit of the sense resistor according to the detected duty and the detected load. | 09-18-2014 |
20140239966 | VOLTAGE MEASURING APPARATUS AND BATTERY MANAGEMENT SYSTEM INCLUDING THE SAME - The voltage measuring apparatus is connected to a plurality of battery cells connected to each other in series to measure respective voltages of the battery cells. The voltage measuring apparatus includes a sample/hold amplifier configured to sample and hold positive electrode and negative electrode voltages of the battery cells to generate first and second output voltages, a differential voltage converter configured to generate a battery cell voltage according to a voltage difference between a positive input terminal and a negative input terminal, and a switching unit configured to control the first and second output voltages and connection between the positive input terminal and the negative input terminal so that a polarity of the voltage difference is constant. The sample/hold amplifier electrically insulates the switching unit from the battery cells. | 08-28-2014 |
20140239897 | VOLTAGE MEASURING APPARATUS AND BATTERY MANAGEMENT SYSTEM INCLUDING THE SAME - Disclosed are a voltage measuring apparatus and a battery management system including the same. The voltage measuring apparatus is connected to a plurality of battery cells connected to each other in series to measure respective voltage of the battery cells. The voltage measuring apparatus includes a first node coupled to one of an positive electrode and a negative electrode of one of a plurality of battery cells as a voltage measuring target, amplifies a voltage difference between the first node and the second node to generate an error voltage, converts the error voltage into a digital signal, and compensates for a polarity of the digital signal. | 08-28-2014 |
20140217572 | Heat Sink Package - Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. | 08-07-2014 |
20140198873 | COMMUNICATION DEVICE - An exemplary embodiment relates to a communication device. A communication device includes: a transmitting unit generating a first analog signal and a second analog signal based on an input signal; and a receiving unit including a first capacitor having a first terminal to which the first analog signal is input and a second capacitor having a first terminal to which the analog signal is input. The receiving unit constantly controls a reference voltage electrically coupled with a second terminal of the first capacitor and a second terminal of the second capacitor, and generating an output signal based on a result of comparison between a first pulse signal generated at the second terminal of the first capacitor and a second pulse signal generated at the second terminal of the second capacitor. | 07-17-2014 |
20140176080 | LOAD/CHARGER DETECTION CIRCUIT, BATTERY MANAGEMENT SYSTEM COMPRISING THE SAME AND DRIVING METHOD THEREOF - Disclosed are a load/charger detection circuit, a battery management system comprising the same and a driving method thereof. The load/charger detection circuit includes a current source; a current mirror connected to the current source to copy a current of the current mirror; at least two resistors connected between a first terminal providing a corresponding voltage to a charger or a load and a power supply; and a zener diode connected between the first terminal and the current mirror. | 06-26-2014 |
20140152266 | BATTERY MANAGEMENT SYSTEM AND MANAGING METHOD THEREOF - A battery management system and a driving method are provided. The battery management system performs a bleeding operation at a moment that a voltage of each cell becomes a reference voltage during an initial charging operation to smoothly change a slope of a charge voltage. Accordingly, the charging time of the cell initially charging at the low voltage is increased, thereby reducing the entire cell balancing period. | 06-05-2014 |
20140146580 | CABLE COMPENSATION CIRCUIT AND POWER SUPPLY INCLUDING THE SAME - A cable compensation circuit compensates a voltage drop in a cable coupled between a power supply and a load. The cable compensation circuit includes: a node where a voltage that depends on an input voltage of the power supply during a turn-on period of a power switch of the power supply and depends on an output voltage of the power supply during a turn-off period of the power switch is generated; a sensing RC filter generating a sense voltage that depends on a diode current by filtering the voltage of the node; and an averaging RC filter generating an average voltage by averaging the sense voltage. | 05-29-2014 |
20140146429 | UNDERVOLTAGE LOCKOUT CIRCUIT, SWITCH CONTROL CIRCUIT AND POWER SUPPLY DEVICE COMPRISING THE UNDERVOLTAGE LOCKOUT CIRCUIT - Exemplary embodiments of the present invention relate to an under-voltage lockout circuit, and a switching control circuit and a power supply including the same. The under-voltage lockout circuit according to an embodiment of the invention includes a first under-voltage lockout circuit comparing a driving voltage with a first reference voltage and a second under-voltage lockout circuit generating an under-voltage lockout signal based on a result of the comparison between the driving voltage and the second reference voltage. The first under-voltage lockout circuit stops operation of the second under-voltage lockout circuit when the driving voltage is lower than the first reference voltage and operates the second under-voltage lockout circuit when the driving voltage is higher than the first reference voltage. Power consumption of the first under-voltage lockout circuit is limited by a first current that generates the first reference voltage. | 05-29-2014 |
20140145682 | BATTERY MANAGEMENT CIRCUIT AND BATTERY MANAGEMENT SYSTEM INCLUDING THE SAME - A battery management circuit and a battery management system including the same are provided. The battery management circuit is coupled to a plurality of battery cells, controls an input of a first pin to correspond to an input of a second pin, and determines a level of a receiving current based on a receiving signal that is input through the first pin. The battery management circuit includes a gate driving circuit including an on-transistor and an off-transistor in which a gate signal that is generated based on the receiving signal is input to a gate. A power supply voltage that is supplied from the plurality of battery cells is coupled to the second pin. | 05-29-2014 |
20140141584 | POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME - A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions. | 05-22-2014 |
20140126088 | PROTECTION CIRCUIT, SWITCH CONTROL CIRCUIT, AND POWER SUPPLY DEVICE COMPRISING THE SAME - Exemplary embodiments relate to a protection circuit, a switch circuit, and a power supply device including the same. The protection circuit includes: a detection circuit that generates a detection voltage that is increased by fluctuation of a comparison voltage; and an SCR (Silicon-Controlled Rectifier Thyristor) that includes a gate where the detection voltage is inputted, an anode electrically connected to a power voltage, and a cathode connected to a predetermined reference voltage, which is turned on when the detection voltage is inputted in the gate, and is turned off when a current does not flow to the anode. | 05-08-2014 |
20140125274 | BIDIRECTIONAL INTERFACE CIRCUIT AND BATTERY MANAGEMENT SYSTEM INCLUDING THE SAME - A bidirectional interface circuit includes a first current mirror circuit that copies a first reference current to generate a first current sunk from a first output terminal, a second current mirror circuit that copies a second reference current to generate a second current sunk from a second output terminal, an interception switch that is connected between the first output terminal and the second output terminal, a first comparator that outputs an upper state signal based on a comparison result of a voltage of the first output terminal and a first threshold voltage, a third current mirror circuit that copies one of a third reference current and a fourth reference current to supply a third current flowing to a third output terminal, and a second comparator that outputs a lower state signal based on a comparison result of a voltage of the second output terminal and a second threshold voltage. | 05-08-2014 |
20140118054 | SWITCH CONTROL CIRCUIT AND POWER SUPPLY DEVICE INCLUDING THE SAME - The present invention relates to a switch control circuit that controls a switching operation of a power switch circuit that includes cascode-coupled first and second transistors. A switch control circuit includes a first zener diode coupled between a gate of the first transistor and a first end of a capacitor supplying a power voltage and a second zener diode coupled to a gate and a source of the first transistor, and a first resistor coupled between the first zener diode and the second zener diode. | 05-01-2014 |
20140077859 | CLOCK SIGNAL GENERATING CIRCUIT AND POWER SUPPLY INCLUDING THE SAME - The present invention relates to a clock signal generating circuit and a power supply including the same. The present invention includes: a counter for counting one period of an input clock signal by using a reference clock signal, and generating a count signal; and a clock signal generator for receiving the count signal and the reference clock signal, dividing the count signal to generate a quotient and a remainder, setting the quotient as a reference period of an output clock signal, and distributing and disposing the remainder to the output clock signal with a plurality of periods occurring for one period of the input clock signal. | 03-20-2014 |
20140049236 | SWITCH CONTROL CIRCUIT, CONVERTER INCLUDING THE SAME AND DRIVING METHOD THEREOF - Disclosed are a switch control circuit, a converter including the same, and a driving method thereof. The converter includes an inductor for storing energy of an input end and providing the same to an output end, a first switch coupled between the inductor and a ground, and a switch control circuit for controlling the first switch by comparing a ramp voltage that corresponds to a current that flows through the first switch and a first voltage that corresponds to an output voltage of the output end. The switch control circuit compares the ramp voltage and the first reference voltage to change the slope of the ramp voltage. | 02-20-2014 |
20140043879 | SWITCH CONTROL DEVICE, POWER SUPPLY DEVICE COMPRISING THE SAME, AND DRIVING METHOD OF POWER SUPPLY DEVICE - The present invention relates to a switch controller, a power supply including the same, and a method for driving the same. An AC input of the power supply is connected to a rectification circuit. The power supply includes a power switch to which an input current passed through the rectification circuit flows during an on-period and a switch controller, the switch controller detects a half-on time point that is the intermediate time point of the on-period, detects a sense voltage that is determined by a current flowing to the power switch during the on-period at the half-on time point, generates a modulation wave by controlling a reference wave according to the detected voltage, and controls switching operation of the power switch according to the modulation wave. | 02-13-2014 |
20140042935 | PIEZOELECTRIC DRIVING CIRCUIT AND PIEZOELECTRIC DRIVING METHOD - A piezoelectric driving circuit and a driving method thereof are provided. The piezoelectric driving circuit drives a piezoelectric circuit by using a first driving switch connected to one end of a piezoelectric circuit, a second driving switch corresponding to the first driving switch and connected to the other end of the piezoelectric circuit, and a sensing resistor for sensing a current flowing in the piezoelectric circuit. A fire angle and a duty cycle of an upper switch are adjusted such that a peak of a sense voltage generated in the sensing resistor at a timing at which the first driving switch is turned on, in a state in which the second driving switch is turned on. | 02-13-2014 |
20140042871 | PIEZOELECTRIC DRIVING CIRCUIT AND DRIVING METHOD THEREOF - A piezoelectric driving circuit generates a first PWM output according to a result of comparison between a ramp signal and a reference sinewave and generates a second PWM according to a result of comparison between the ramp signal and an inverse reference sinewave of the reference sinewave. The switching operation of the first and third switches of the piezoelectric driving circuit are controlled according to the first PWM output and the switching operation of the second and fourth switches of the piezoelectric driving circuit are controlled according to the second PWM output during a first cycle of the reference sinewave and the inverse reference sinewave. The switching operation of the first and third switches are controlled according to the second PWM output and the switching operation of the second and fourth switches are controlled according to the first PWM output during the next second cycle. | 02-13-2014 |
20140021985 | SEMICONDUCTOR DEVICE INCLUDING POWER-ON RESET CIRCUIT - A semiconductor device including a power-on-reset (POR) circuit. The semiconductor device includes a driving voltage generator configured to generate a first voltage that rises at a first slope and subsequently rises at a second slope greater than the first slope and a first POR signal generator configured to receive the first voltage and generate a first POR signal having a first ramp-up time. | 01-23-2014 |
20140008765 | POLY SILICON RESISTOR, REFERENCE VOLTAGE CIRCUIT COMPRISING THE SAME, AND MANUFACTURING METHOD OF POLY SILICON RESISTOR - The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polusilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated. | 01-09-2014 |
20130342125 | DIMMING ANGLE SENSING CIRCUIT, DIMMING ANGLE SENSING METHOD, AND POWER SUPPLY DEVICE COMPRISING THE DIMMING ANGLE SENSING CIRCUIT - A dimming angle sense circuit according to an exemplary embodiment of the present invention generates a source current that depends on an auxiliary voltage corresponding to an input voltage during a turn-on period of a power switch for a period during which an input is generated according to a dimming angle. The dimming angle sense circuit generates a dimming sense voltage by mirroring the source current, and generates a sampling voltage by sampling a dimming sense voltage for every turn-on period of a power switch. The dimming angle sense circuit generates a dimming signal by supplying a dimming current to a dimming resistor and a dimming capacitor according to a result of comparison between the sampling voltage and a reference voltage. | 12-26-2013 |
20130314961 | SWITCH CONTROL DEVICE, POWER SUPPLY DEVICE COMPRISING THE SAME, AND DRIVING METHOD OF POWER SUPPLY DEVICE - The present invention relates to a switch controller, a power supply including the same, and a driving method thereof. An AC input of the power supply is connected to a rectification circuit. The power supply includes a power switch to which the AC input passed through the rectification circuit flows during a turn-on period of the power switch and a switch controller detecting a half-on time point that is an intermediate time point of the turn-on period, calculating the AC current using a result of sampling a sense voltage that depends on a current flowing to the power switch during the turn-on period at the half-on time point and the turn-on period, and controlling the input current to have a reference sine wave. The reference sine wave has a sine wave that is full-wave rectified from the AC input. | 11-28-2013 |
20130307145 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A semiconductor package including a package substrate; a semiconductor chip on the package substrate; a first via contact on the package substrate; a second via contact on the semiconductor chip; a metal wiring, which is arranged on the first via contact and the second via contact and interconnects the first via contact and the second via contact; a first encapsulating material which is arranged between the metal wiring and the package substrate and encapsulates the semiconductor chip, the first via contact, and the second via contact; and a second encapsulating material which encapsulates the first encapsulating material and the metal wiring. | 11-21-2013 |
20130300391 | CONTROLLER, CONTROLLING METHOD, AND DIGITAL DC-DC CONVERTER USING THE CONTROLLER AND THE CONTROLLING METHOD - An exemplary embodiment of the present invention generates a plurality of clock signals having a frequency according to an output voltage, a plurality of low clock signals of which frequencies are half of frequencies of the plurality of clock signals, and a phase signal corresponding to the output voltage by subtracting an average phase error from a count signal sampled by being synchronized with a reference clock signal from the count result of a first clock signal having the earliest phase among the plurality of clock signals. The average phase error is generated according to a comparison result of a first low clock signal corresponding to the first clock signal and each of other low clock signals among the plurality of low clock signals by being synchronized with the reference clock signal. | 11-14-2013 |
20130300390 | SWITCH CONTROL CIRCUIT, COUPLED INDUCTOR BOOST CONVERTER INCLUDING THE SAME, AND DRIVING METHOD OF THE COUPLED INDUCTOR BOOST CONVERTER - The present invention related to a switch control circuit, a coupled inductor boost converter including the same, and a driving method thereof. The coupled inductor boost converter includes a first inductor connected between an input voltage and a first node, a second inductor connected between the first node and a second node, and a power switch connected between the first node and a ground, and a switch control circuit. The switch control circuit receives a voltage of the second node and turn on the power switch by using the voltage of the second node at a time when a voltage of the first node becomes a zero voltage. | 11-14-2013 |
20130300315 | SWITCH CONTROLLER, POWER SUPPLY DEVICE COMPRISING THE SAME, AND DRIVING METHOD OF THE POWER SUPPLY DEVICE - The power supply device includes a power switch including one terminal to which an input voltage is transferred; an inductor including one terminal connected to another terminal of the power switch; a diode connected between a ground and a floating ground; a sensing resistor connected between the floating ground and the one terminal of the inductor. A switch controller compares a modulation sensing voltage depending on a sensing voltage generated from the sensing resistor with a high peak reference and a low peak reference when a LED string is connected between an inductor and the ground. The switch controller controls a switching operation of a power switch according to the comparison result. The high peak reference and the low peak reference are references for controlling an upper limit and a lower limit of an LED current flowing through the LED string, respectively. | 11-14-2013 |
20130293064 | PIEZOELECTRIC CIRCUIT, PIEZOELECTRIC DRIVING CIRCUIT FOR THE PIEZOELECTRIC CIRCUIT, AND PIEZOELECTRIC DRIVING METHOD - The present invention relates to a piezoelectric circuit, a piezoelectric driving circuit driving the piezoelectric circuit, and a method for driving the piezoelectric circuit. The piezoelectric circuit includes a sub-piezoelectric circuit and an external inductor coupled in parallel with the sub-piezoelectric circuit. The external inductor discharges the sub-piezoelectric circuit when a polarity of a piezoelectric voltage, that is, a both-end voltage of the piezoelectric circuit is inverted. The piezoelectric driving circuit includes first and third switches connected to a first node of the piezoelectric circuit and second and fourth switches connected to a second node of the piezoelectric circuit. | 11-07-2013 |
20130277793 | POWER DEVICE AND FABRICATING METHOD THEREOF - A power device, which has a Field Stop (FS) layer based on a semiconductor substrate between a collector region and a drift region in an FS-IGBT structure, wherein the thickness of the FS layer and the impurity density of the collector region are easy to adjust and the FS layer has an improved function, and a fabricating method thereof. | 10-24-2013 |
20130249607 | BOOTSTRAPPED SWITCH CIRCUIT AND DRIVING METHOD THEREOF - The present invention relates to a bootstrap switch circuit and a driving method thereof. The bootstrap switch circuit includes: an input transistor including a first electrode for receiving an input voltage; an output transistor including a second electrode connected to a second electrode of the input transistor, and a first electrode for outputting an output voltage; a control transistor including a control electrode connected to the second electrode of the input transistor and the second electrode of the output transistor, and a first electrode for receiving a power supply voltage; and a level shifter including a power input terminal connected to the second electrode of the control transistor, an output terminal connected to a control electrode of the input transistor and a control electrode of the output transistor, and an input terminal for receiving a switch control signal. The level shifter turns on the input transistor and the output transistor when the switch control signal is an enable level, and it turns off the input transistor and the output transistor when the switch control signal is a disable level. | 09-26-2013 |
20130249406 | LED Emitting Device and Driving Method Thereof - Disclosed are an LED emitting device and driving method thereof. The LED emitting device controls an LED drive switch connected to a first end of an LED string to control an output current supplied to the LED string. The LED emitting device generates feedback information on the output voltage or the output current supplied to the LED string, and uses the output current to sense an open lamp state of the LED string. The LED emitting device uses a voltage at a first end of the LED drive switch to sense a change of the LED string to a normal state from the open lamp state. | 09-26-2013 |
20130207253 | Complex Semiconductor Packages and Methods of Fabricating the Same - Disclosed are complex semiconductor packages, each including a large power module package which includes a small semiconductor package, and methods of manufacturing the complex semiconductor packages. An exemplary complex semiconductor package includes a first package including: a first packaging substrate; a plurality of first semiconductor chips disposed on the first packaging substrate; and a first sealing member covering the first semiconductor chips on the first packaging substrate; and at least one second package separated from the first packaging substrate, disposed in the first sealing member, and including second semiconductor chips. | 08-15-2013 |
20130196480 | HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING FIELD SHAPING LAYER AND METHOD OF FABRICATING THE SAME - Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer. | 08-01-2013 |
20130128640 | SWITCH CONTROLLER, SWITCH CONTROL METHOD, AND POWER SUPPLY DEVICE COMPRISING THE SWITCH CONTROLLER - The present invention relates to a switch controller, a switch control method, and a power supply including the switch controller. An exemplary embodiment of the present invention detects an on-time of a power switch of the power supply and decreases a frequency of a clock signal according to a period during which the detected on-time is shorter than or equal to the minimum on-time. According to the exemplary embodiment, switching of the power switch is controlled according to a clock signal, and the minimum on-time is an on period of the power switch that cannot be shortened. | 05-23-2013 |
20130128627 | SWITCH CONTROL METHOD, SWITCH CONTROLLER, AND CONVERTER COMPRISING THE SWITCH CONTROLLER - The present invention relates to a converter, a switch controller controlling switching operation of a power switch in the converter, and a switch control method. An exemplary embodiment of the present invention generates a reference current corresponding to an output current of the converter and generates a control voltage that depends on the reference current. The exemplary embodiment controls an increase or a decrease of the control voltage and determines a switching frequency of the power switch according to the control voltage. The exemplary embodiment controls on-time of the power switch using a reference voltage determined according to a control current that depends on the reference current. | 05-23-2013 |
20130106377 | CONTROL VOLTAGE DELAY DEVICE, DIGITAL POWER CONVERTER USING THE SAME, AND DRIVING METHOD THEREOF | 05-02-2013 |
20130070372 | PROTECTION CIRCUIT, RESONANT CONVERTER INCLUDING THE PROTECTION CIRCUIT, AND PROTECTING METHOD OF THE RESONANT CONVERTER - The present invention relates to a protection circuit, a resonance converter having the same, and a protection method thereof. A resonance converter having high-side and low-side switches senses a current flowing through the low-side switch and determines a zero voltage switching failure by using a width of a current flowing to a negative direction of the low-side switch. | 03-21-2013 |
20120161274 | SUPERJUNCTION SEMICONDUCTOR DEVICE - A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners. The edge p pillar has an outer region surrounding the active region and an inner region on in the sides of the active region. The active region has active p pillars and active n pillars having vertical stripe shapes. The active p pillars and the active n pillars are alternately arranged horizontally in the active region. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar. | 06-28-2012 |
20110073984 | SEMICONDUCTOR POWER MODULE PACKAGE WITH TEMPERATURE SENSOR MOUNTED THEREON AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal. | 03-31-2011 |
20100320537 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode. | 12-23-2010 |
20100289137 | HEAT SINK PACKAGE - Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. | 11-18-2010 |
20100271079 | POWER SEMICONDUCTOR DEVICE - Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit. | 10-28-2010 |
20100203684 | SEMICONDUCTOR PACKAGE FORMED WITHIN AN ENCAPSULATION - Provided are a semiconductor package which is small in size but includes a large number of terminals disposed at intervals equal to or greater than a minimum pitch, and a method of fabricating the semiconductor package. The semiconductor package includes a semiconductor chip having a bottom surface on which a plurality of bumps are formed, redistribution layer patterns formed under the semiconductor chip and each including a first part electrically connected to at least one of the bumps and a second part electrically connected to the first part, an encapsulation layer surrounding at least a top surface of the semiconductor chip, and a patterned insulating layer formed below the redistribution layer patterns and exposing at least parts of the second parts of the redistribution layer patterns. | 08-12-2010 |
20100176498 | POWER MODULE PACKAGE HAVING EXCELLENT HEAT SINK EMISSION CAPABILITY AND METHOD FOR MANUFACTURING THE SAME - A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame. | 07-15-2010 |
20100167470 | POWER MODULE FOR LOW THERMAL RESISTANCE AND METHOD OF FABRICATING THE SAME - A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented. | 07-01-2010 |
20100165576 | POWER SYSTEM MODULE AND METHOD OF FABRICATING THE SAME - Provided are a power system module allowing a user's requirements to be easily met, and having economic practicality and high integration, and a manufacturing method thereof. The power system module includes a plastic case, a molding type power module package, a control circuit board, and at least one external terminal. The plastic case defines a bottom and a side wall. The molding type power module package is fixed to the bottom of the plastic case and includes at least a power device therein. The control circuit board is fixed to the side wall of the plastic case, includes at least a control device mounted thereon which is electrically connected to the power module package. The external terminal protrudes to outside the plastic case and is electrically connected to the control circuit board. | 07-01-2010 |
20100140786 | SEMICONDUCTOR POWER MODULE PACKAGE HAVING EXTERNAL BONDING AREA - Provided is a semiconductor power module package including a bonding area on a direct bonding cupper (DBC) board. The semiconductor power module package includes: one or more semiconductor chips; a sealing member sealing the one or more semiconductor chips; a plurality of leads electrically connected to the one or more semiconductor chips and exposed from the sealing member; and an external bonding member electrically connected to the one or more semiconductor chips and electrically connecting an external circuit board exposed from the sealing member. | 06-10-2010 |
20100093134 | SEMICONDUCTOR PACKAGE HAVING INSULATED METAL SUBSTRATE AND METHOD OF FABRICATING THE SAME - Provided is a semiconductor package in which an adhesion force between an insulation metal substrate and a molding member is increased by removing a solder mask layer from the insulation metal substrate and a method of fabricating the semiconductor package. The semiconductor package includes an insulation metal substrate that includes a base member, an insulating layer disposed on the base member, and conductive patterns formed on the insulating layer. Semiconductor chips are arranged on the conductive patterns. Solder mask patterns are arranged on the conductive patterns to surround the semiconductor chips. Leads are electrically connected to the conductive patterns through wires. A sealing member is arranged on an upper surface and side surfaces of the substrate to cover portions of the leads, the wires, the semiconductor chips, and the solder mask patterns. | 04-15-2010 |
20100019809 | Switch Controller, Switch Control Method, And Converter Using The Same - Disclosed are a switch controller, a switch control method, and a converter based thereon. The switch controller generates an input sensing voltage corresponding to the input voltage of the converter, and compares the input sensing voltage with a predetermined first reference value. The switch controller generates a zero cross detection signal with a first level or a second level depending upon the comparison result, and generates a reference clock signal varying in frequency in accordance with one cycle of the zero cross detection signal. The switch controller generates digital signals by using the reference clock signal and the zero cross detection signal. The digital signals synchronize with the zero cross detection signal, and increase in accordance with the reference clock signal during a half of one cycle of the zero cross detection signal, while decreasing in accordance with the reference clock signal during the other half cycle of the zero cross detection signal. The switch controller generates a reference signal with a voltage level corresponding to the digital signal. | 01-28-2010 |
20100019688 | Inverter And Lamp Driver Including The Same - The present invention relates to an inverter and a lamp driver having the same. The inverter includes a first switch having a first body diode, a second switch having a second body diode, a transformer including a first side coil in which a first current and a first voltage are generated according to switching operations of the first switch and the second switch and a second side coil having a predetermined winding ratio with respect to the first side coil, and a controller for controlling each switching operation of the first switch and the second switch. The controller turns on one of the first switch and the second switch corresponding to one of the first body diode and the second body diode, and a current flows through the first switch and the second switch during a dead time. | 01-28-2010 |
20100001343 | HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING FIELD SHAPING LAYER AND METHOD OF FABRICATING THE SAME - Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer. | 01-07-2010 |
20090323374 | Switch Control Device And Converter Including The Same - The present invention relates to a switch control device and a converter including the same. According to an exemplary embodiment of the present invention, the switch control device includes a PWM controller for forcing a power switch to turn on when the power switch is turned off during a predetermined period, a current sensor for determining whether a current flows through the power switch, and a conditional counter for determining that an input voltage is input to a power transmission element by using a sense result of the current sensor and a number of times that the PWM controller turns on the power switch by force. | 12-31-2009 |
20090296437 | Converter - A converter is provided including: a first switch; an energy transmitting element for converting input energy into output energy according to the switching of the first switch; and a switching controller for detecting a time when a voltage between a first terminal and a second terminal of the first switch reaches a valley of a resonance waveform, and actuating the first switch corresponding to one of the detected valleys of the resonance waveform. The switching controller includes: a valley detector for changing the state of the output signal whenever a voltage between a first terminal and a second terminal of the first switch reaches a valley of the resonance waveform; and a PWM controller for actuating the first switch corresponding to an output signal of the valley detector. | 12-03-2009 |
20090295358 | Driving Device - The present invention relates to a driving device. The driving device according to the present invention includes a main transistor that supplies a current to a load by using a power supply, an auxiliary transistor that drops a predetermined voltage of the voltage of the power supply and transmits the dropped voltage to the main transistor in a turn-on state, and a bypass switch that transmits the voltage of the power supply to the main transistor when the auxiliary transistor is turned off. | 12-03-2009 |
20090251929 | Convertor and Driving Method Thereof - A converter and a driving method thereof are provided. The converter includes first and second switches, and generates a square wave signal according to operations of the first and second switches. The converter includes a first capacitor and a primary coil, and resonates a driving voltage by using a driving voltage with the first capacitor and the primary coil so as to generate a driving current. The converter includes a secondary coil that forms the primary coil and the transformer, and generates output power by rectifying a current and a voltage generated in the secondary coil. In addition, the converter detects the phase of the driving current, and increases switching frequencies of the first and second switches if a phase difference of the phase of the driving current and that of the driving voltage is smaller than a predetermined value. | 10-08-2009 |
20090250753 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode. | 10-08-2009 |
20090243696 | HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SHIFTERS AND METHOD OF FABRICATING THE SAME - Provided are a high-voltage semiconductor device including a junction termination which electrically isolates a low voltage unit from a high voltage unit, and a method of fabricating the same. The high voltage semiconductor device includes a high voltage unit, a low voltage unit surrounding the high voltage unit, and a junction termination formed between the high voltage unit and the low voltage unit and surrounding the high voltage unit to electrically isolate the high voltage unit from the low voltage unit. The junction termination includes at least one level shifter which level shifts signals from the low voltage unit and supplies the same to the high voltage unit, a first device isolation region surrounding the high voltage unit to electrically isolate the high voltage unit from the level shifter, and a resistor layer electrically connecting neighboring level shifters. | 10-01-2009 |
20090230481 | SEMICONDUCTOR DEVICE FORMED USING SINGLE POLYSILICON PROCESS AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions. | 09-17-2009 |
20090194869 | HEAT SINK PACKAGE - Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. | 08-06-2009 |
20090194859 | SEMICONDUCTOR PACKAGE AND METHODS OF FABRICATING THE SAME - Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al | 08-06-2009 |
20090184406 | SEMICONDUCTOR PACKAGE HAVING INSULATED METAL SUBSTRATE AND METHOD OF FABRICATING THE SAME - Provided is a semiconductor package in which an adhesion force between an insulation metal substrate and a molding member is increased by removing a solder mask layer from the insulation metal substrate and a method of fabricating the semiconductor package. The semiconductor package includes an insulation metal substrate that includes a base member, an insulating layer disposed on the base member, and conductive patterns formed on the insulating layer. Semiconductor chips are arranged on the conductive patterns. Solder mask patterns are arranged on the conductive patterns to surround the semiconductor chips. Leads are electrically connected to the conductive patterns through wires. A sealing member is arranged on an upper surface and side surfaces of the substrate to cover portions of the leads, the wires, the semiconductor chips, and the solder mask patterns. | 07-23-2009 |
20090127681 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a first die-pad on which a semiconductor chip is mounted on a bottom surface of the first die-pad, a support plate disposed adjacent to a lateral surface of the first die-pad, a support prop protruding from the support plate, and supporting the first die-pad, and a package body that encapsulates the first die-pad, the semiconductor chip, and the support plate. | 05-21-2009 |
20080211053 | Superjunction Semiconductor Device - In accordance with an embodiment of the invention, a superjunction semiconductor device includes an active region and a termination region surrounding the active region. A central vertical axis of a boundary column of a second conductivity type material defines the boundary between the active region and the termination region. The active and termination regions include columns of first and second conductivity type material alternately arranged along a horizontal direction in a semiconductor region having top and bottom surfaces. At least one of the columns of the first conductivity type material in the termination region has a different width than a width of the columns of the first conductivity type material in the active region. | 09-04-2008 |