SUMCO CORPORATION Patent applications |
Patent application number | Title | Published |
20160122904 | METHOD OF PRODUCING EPITAXIAL WAFER - A method of adjusting conditions for epitaxial growth includes a first measurement step for measuring the thickness profile of a wafer before forming an epitaxial film; a second measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of the epitaxial film a after an epitaxial growth step before a polishing step; a third measurement step for measuring the thickness profile of an epitaxial wafer and the film thickness profile of an epitaxial film; and a step for adjusting conditions for epitaxial growth using the thickness profiles and the film thickness profiles measured in the first, second, and third measurement steps. | 05-05-2016 |
20160099360 | WAFER FOR SOLAR CELL, METHOD OF PRODUCING WAFER FOR SOLAR CELL, METHOD OF PRODUCING SOLAR CELL, AND METHOD OF PRODUCING SOLAR CELL MODULE - Provided is a wafer for solar cell which can be produced using a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, which wafer can be used for manufacturing a solar cell with high conversion efficiency. | 04-07-2016 |
20160097144 | CONTAMINATION CONTROL METHOD OF VAPOR DEPOSITION APPARATUS AND METHOD OF PRODUCING EPITAXIAL SILICON WAFER - A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas. | 04-07-2016 |
20160087049 | EPITAXIAL SILICON WAFER - An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a W concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×10 | 03-24-2016 |
20160083836 | PRODUCTION METHOD OF EPITAXIAL SILICON WAFER AND VAPOR DEPOSITION APPARATUS - A method for producing an epitaxial silicon wafer by applying a vapor deposition on a silicon wafer is disclosed. A vapor deposition apparatus in which the vapor deposition is conducted at least includes a chamber and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve including a diaphragm that allows or blocks a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-free anticorrosion alloy material is used for the diaphragm. When a maintenance work is to be done inside the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber. | 03-24-2016 |
20160079129 | METHOD OF EVALUATING METAL CONTAMINATION IN BORON-DOPED P-TYPE SILICON WAFER, DEVICE OF EVALUATING METAL CONTAMINATION IN BORON-DOPED P-TYPE SILICON WAFER, AND METHOD OF MANUFACTURING BORON-DOPED P-TYPE SILICON WAFER - An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated. | 03-17-2016 |
20160042974 | EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME - An epitaxial silicon wafer cut from a silicon single crystal grown by the Czochralski method, and having a diameter of 300 mm or more. In this epitaxial silicon wafer, the time required to cool every part of the silicon single crystal during the growth from 800° C. down to 600° C. is set to 450 minutes or less, the interstitial oxygen concentration is from 1.5×10 | 02-11-2016 |
20160035583 | MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER - A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R≦2.0×10-4X | 02-04-2016 |
20150380493 | MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER, AND EPITAXIAL SILICON WAFER - An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter. | 12-31-2015 |
20150318222 | METHOD OF EVALUATING METAL CONTAMINATION IN SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER - An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function. | 11-05-2015 |
20150303049 | METHOD FOR PROCESSING SEMICONDUCTOR WAFER - In a wafer processing method by which, by using, as a reference surface, a flat surface obtained by applying a curable material to the whole of one surface of a wafer obtained by slicing a semiconductor single-crystal ingot by using a wire saw apparatus, surface grinding is performed on the other surface of the wafer and surface grinding is performed on the one surface of the wafer by using the other surface of the wafer subjected to surface grinding as a reference surface, both surfaces of the wafer are planarized at the same time immediately after the wafer is obtained by slicing. | 10-22-2015 |
20150187060 | WAFER DEFECT INSPECTION APPARATUS AND METHOD FOR INSPECTING A WAFER DEFECT - It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part | 07-02-2015 |
20150184313 | EPITAXIAL GROWTH APPARATUS - Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member. | 07-02-2015 |
20150114282 | EPITAXIAL GROWTH METHOD - A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm | 04-30-2015 |
20150107511 | EPITAXIAL GROWTH METHOD - A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm | 04-23-2015 |
20150082833 | POLYCRYSTALLINE SILICON AND METHOD OF CASTING THE SAME - Casting polycrystalline silicon includes placing a bottomless cooling crucible divided at least partially in the axis direction into a plurality of parts in the peripheral direction and having an inner surface coated with a release agent containing nitrogen, in an induction coil of a chamber charged with an inert gas; melting a raw material of polycrystalline silicon in the bottomless cooling crucible by electromagnetic induction heating using the induction coil; and pulling out the molten silicon downward while cooling and solidifying it. Pullout of the solidified molten silicon is performed through adjusting the carbon concentration of the molten silicon to 4.0×10 | 03-26-2015 |
20150054134 | SILICON WAFER AND MANUFACTURING METHOD THEREOF - A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process. | 02-26-2015 |
20150007764 | METHOD FOR MEASURING THREE-DIMENSIONAL SHAPE OF SILICA GLASS CRUCIBLE, AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON - A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided. | 01-08-2015 |
20140326172 | METHOD FOR EVALUATING SILICA GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS - The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided. | 11-06-2014 |
20140264765 | SEMICONDUCTOR WAFER AND METHOD OF PRODUCING SAME - A wafer surface of a semiconductor wafer to be used as a device active region is mirror-polished, and an outer peripheral portion of the mirror-polished wafer surface is further polished, thereby forming an edge roll-off region between the device active region of the wafer surface and a beveled portion formed at the wafer edge. The edge roll-off region has a specific roll-off shape corresponding to an edge roll-off of the oxide film to be formed in a device fabrication process. Thus, a semiconductor wafer can be provided in which reduction in the thickness of an oxide film on the outer peripheral portion of the wafer in a CMP process can be prevented while maintaining high flatness of the wafer surface. | 09-18-2014 |
20140238487 | WAFER FOR SOLAR CELL, METHOD OF PRODUCING WAFER FOR SOLAR CELL, METHOD OF PRODUCING SOLAR CELL, AND METHOD OF PRODUCING SOLAR CELL MODULE - Provided is a wafer for solar cell which can be produced using a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, which wafer can be used for manufacturing a solar cell with high conversion efficiency. | 08-28-2014 |
20140162532 | METHOD OF POLISHING ONE SIDE OF WAFER AND SINGLE SIDE POLISHING APPARATUS FOR WAFER - A method of polishing one side of a wafer, which makes it possible to accurately realize the desired wafer edge shape without dependence on the period of use of a polishing cloth, is provided. In the method according to the present invention, a wafer fixed to a head is brought into contact with a polishing cloth provided on a surface of a surface plate, and the head and the surface plate are rotated, thereby polishing one side of the wafer, the method including the steps of measuring a contact angle of the polishing cloth (S | 06-12-2014 |
20140134780 | METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE - Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same. | 05-15-2014 |
20140134779 | METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE - Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. | 05-15-2014 |
20140097866 | METHOD OF EVALUATING METAL CONTAMINATION IN SEMICONDUCTOR SAMPLE AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage V | 04-10-2014 |
20140080247 | METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE - The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. | 03-20-2014 |
20140057383 | METHOD OF PRODUCING WAFER FOR SOLAR CELL, METHOD OF PRODUCING SOLAR CELL, AND METHOD OF PRODUCING SOLAR CELL MODULE - Provided is a method of producing a wafer for a solar cell that can produce the solar cell with high conversion efficiency. | 02-27-2014 |
20140030897 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. | 01-30-2014 |
20140005953 | METHOD FOR DETERMINING COP GENERATION FACTORS FOR SINGLE-CRYSTAL SILICON WAFER | 01-02-2014 |
20130337723 | METHOD AND APPARATUS FOR POLISHING WORKPIECE - In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate. | 12-19-2013 |
20130319318 | CRYSTAL HOLDING MECHANISM OF SINGLE CRYSTAL PULLING DEVICE AND METHOD FOR PRODUCING SINGLE CRYSTAL INGOT - The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented. | 12-05-2013 |
20130306109 | APPARATUS FOR CLEANING EXHAUST PASSAGE FOR SEMICONDUCTOR CRYSTAL MANUFACTURING DEVICE AND METHOD FOR CLEANING SAME - Dust that is accumulated in an exhaust passage provided in a chamber, the exhaust passage for discharging gas in the chamber of a semiconductor crystal manufacturing device, is removed by being sucked from the outside of the chamber. Moreover, an opening and closing valve for cleaning that is detachably attached to an opening of the exhaust passage, the opening facing the chamber, is opened and closed intermittently in a suction state. Furthermore, the opening and closing valve for cleaning is driven by a valve driving unit. The dust accumulated in the exhaust passage is removed efficiently, whereby the time required to clean the exhaust passage is shortened and fluctuations of the pressure inside the chamber when a semiconductor crystal is manufactured are suppressed. | 11-21-2013 |
20130264690 | METHOD OF PRODUCING EPITAXIAL WAFER AND THE EPITAXIAL WAFER - The present invention provides a method of producing an epitaxial wafer having a highly flat rear surface without polishing top and rear surfaces of the epitaxial wafer after forming an epitaxial film. A method of producing an epitaxial wafer | 10-10-2013 |
20130263773 | SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD - The distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. The mirror image is a reflected image of the heat shield on the surface of the silicon melt. Based on the distance between the obtained real image and the mirror image, the melt level position of the silicon melt is computed, and the distance between the heat shield and the melt level position is regulated. | 10-10-2013 |
20130224438 | METHOD FOR REMOVING OXIDE FILM FORMED ON SURFACE OF SILICON WAFER - Disclosed is a method for removing an oxide film formed on a surface of a silicon wafer, comprising steps of: preparing a silicon wafer having an oxide film formed thereon; arranging a discoid wafer mounting stage, which has a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that a wafer center coincides with a central axis of the mounting stage; and circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between a chamfered surface and a wafer lower surface toward the inner side of the wafer until a desired interval a is obtained, wherein the desired interval a is adjusted by changing a stage diameter of the mounting stage. | 08-29-2013 |
20130133374 | SILICON ELECTROMAGNETIC CASTING APPARATUS - Provided is a silicon electromagnetic casting apparatus that is capable of stably producing polycrystalline silicon used as a solar cell substrate material, having a bottomless cold mold and an induction heating coil, the apparatus for pulling down the silicon melted through electromagnetic induction heating by means of the induction coil and solidifying the silicon melt; further including a plasma torch for generating a transferable plasma arc and a top heater configured so as to face a top surface of the molten silicon, the top heater for generating heat through electromagnetic induction by means of the induction coil. The apparatus enables, upon production of a high quality polycrystalline silicon ingot as a solar cell substrate material along with plasma heating, stable production thereof without cracking in a final solidification portion. | 05-30-2013 |
20130109180 | METHOD FOR POLISHING SILICON WAFER, AND POLISHING SOLUTION FOR USE IN THE METHOD | 05-02-2013 |
20130095660 | METHOD FOR POLISHING SILICON WAFER - To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the haze value of the finish-polished surface of the wafer is used as the chief component of the final polishing solution. | 04-18-2013 |
20130032573 | METHOD FOR POLISHING SILICON WAFER AND POLISHING LIQUID THEREFOR - Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled. | 02-07-2013 |
20120329204 | WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE, PRODUCTION METHOD THEREOF AND BACKSIDE ILLUMINATION SOLID IMAGING DEVICE - A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer. | 12-27-2012 |
20120315739 | MANUFACTURING METHOD FOR SEMICONDUCTOR WAFER - All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling. | 12-13-2012 |
20120306052 | SILICON WAFER AND METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device processes. An epitaxial wafer according to the present invention includes a wafer | 12-06-2012 |
20120293793 | METHOD OF EVALUATING SILICON WAFER AND METHOD OF MANUFACTURING SILICON WAFER - A method of evaluating a silicon wafer includes obtaining first surface distribution information indicating an surface distribution of photoluminescence intensity on a surface of a silicon wafer; after obtaining the first surface distribution information, subjecting the silicon wafer to a thermal oxidation treatment, and then obtaining second surface distribution information indicating an surface distribution of photoluminescence intensity on the surface of the silicon wafer; obtaining difference information for the first surface distribution information and third surface distribution information, with the third surface distribution information having been obtained by correcting the second surface distribution information with a correction coefficient of less than 1; and based on the difference information obtained, evaluating an evaluation item selected from the group consisting of absence or presence of oxygen precipitates and surface distribution of oxygen precipitates in the silicon wafer being evaluated. | 11-22-2012 |
20120285382 | EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD - A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor. | 11-15-2012 |
20120270167 | COVER FOR VITREOUS SILICA CRUCIBLE AND VITREOUS SILICA CRUCIBLE AND METHOD OF HANDLING THE SAME - By providing a method capable of avoiding invasion of starting material powder for crucible into an inner face of the crucible, it is made possible to reliably avoid the invasion of foreign substances into a vitreous silica crucible until an actual use time of the crucible and to handle the crucible with no contamination. A cover | 10-25-2012 |
20120244703 | TRAY FOR CVD AND METHOD FOR FORMING FILM USING SAME - A tray for film formation by a CVD method includes a tray main body ( | 09-27-2012 |
20120234358 | CLEANING METHOD - To provide a cleaning method which makes it possible to reduce alkaline component mixing in an ozone cleaning solution, thereby preventing impairment of cleaning ability of ozone. In the cleaning method, before chuck members retain another workpiece having previously been dipped in an ozone cleaning solution in an ozone cleaning tank, alkaline component attached to part of transfer arms and the chuck members is removed by cleaning, thereby preventing the alkaline component from mixing into the ozone cleaning solution. | 09-20-2012 |
20120208439 | METHOD FOR POLISHING SEMICONDUCTOR WAFER - In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the table, at a time when the table and the work carrier both having been at rest are rotated, each at a predetermined number of revolutions, in a condition that the polishing cloth and the semiconductor wafer are pressed against each other, to thereby start polishing, a table acceleration is maintained smaller than a work carrier acceleration. By such maintaining the table acceleration smaller than the work carrier acceleration, vibrations to be generated when the polishing is started can be prevented. In the method for polishing a semiconductor wafer according to the present invention, the diameter of the semiconductor wafer is preferably defined to be 30% or more of the diameter of the table. | 08-16-2012 |
20120176612 | METHOD OF DETECTING SPECIFIC DEFECT, AND SYSTEM AND PROGRAM FOR DETECTING SPECIFIC DEFECT - The present invention provides a detection method which allows specific defects that would occur on a wafer surface to be detected more reliably. A method of detecting a specific defect of the present invention includes the steps of: acquiring a light point map which is in-plane position information of a light point detected in a position corresponding to a defect on a surface of a wafer by irradiating the surface of the wafer with light (S | 07-12-2012 |
20120156878 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface. | 06-21-2012 |
20120145068 | APPARATUS OF PRODUCING SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING SILICON SINGLE CRYSTAL - An apparatus of producing a silicon single crystal including: an imaging device; a heat shield that has a circular opening; a first operation unit that operates the imaging device and takes a real image of the heat shield and a mirror image of the heat shield reflected on a surface of the silicon melt, measures a spacing between the real image and the mirror image, and calculates a position of a melt-surface; a second operating unit that operates the imaging device and takes an image of a bright-zone in the vicinity of the solid-liquid interface, and calculates a position of the melt-surface based on the image of the bright zone; and a controlling unit that refers a data of the position of the silicon melt obtained by the first operation unit and the second operation unit, and controls the position of the silicon melt. | 06-14-2012 |
20120126361 | EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF - A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer. | 05-24-2012 |
20120112319 | EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME - It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced. | 05-10-2012 |
20120112190 | EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME - It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced. | 05-10-2012 |
20120104565 | EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME - When a mixed gas of trichlorosilane and dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 1000 to 1100° C., preferably, 1040 to 1080° C. When dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 900 to 1150° C., preferably, 1000 to 1150° C. According to this, a silicon epitaxial wafer, which has low haze level, excellent flatness (edge roll-off), and reduced orientation dependence of epitaxial growth rate, and is capable of responding to the higher integration of semiconductor devices, can be obtained, and this epitaxial wafer can be used widely in production of semiconductor devices. | 05-03-2012 |
20120090536 | METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously. | 04-19-2012 |
20120077290 | METHOD OF ETCHING SURFACE LAYER PORTION OF SILICON WAFER AND METHOD OF ANALYZING METAL CONTAMINATION OF SILICON WAFER - An aspect of the present invention relates to a method of etching a surface layer portion of a silicon wafer comprising: positioning the silicon wafer within a sealed vessel containing a mixed acid A of hydrofluoric acid and sulfuric acid so that the silicon wafer is not in contact with mixed acid A; introducing a solution B in the form of nitric acid containing nitrogen oxides into the sealed vessel and causing solution B to mix with mixed acid A; and vapor phase decomposing the surface layer portion of the silicon wafer within the sealed vessel within which mixed acid A and solution B have been mixed. | 03-29-2012 |
20120071064 | FIXED ABRASIVE-GRAIN PROCESSING DEVICE, METHOD OF FIXED ABRASIVE-GRAIN PROCESSING, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members. | 03-22-2012 |
20120056307 | EPITAXIAL SILICON WAFER AND PRODUCTION METHOD THEREOF - Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression. | 03-08-2012 |
20120043644 | SILICON WAFER AND MANUFACTURING METHOD - A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process. | 02-23-2012 |
20120034850 | METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step. | 02-09-2012 |
20120034147 | METHOD FOR CLEANING SILICON SLUDGE - After removing organic matters and forming a silicon oxide film by ozone-oxidizing a silicon powder in silicon sludge, the ozone is removed and the resulting sludge is dispersed into hydrochloric acid for dissolving metal impurities thereinto. Then, the supernatant liquid of the hydrochloric acid is removed, and the silicon oxide film is dissolved with hydrofluoric acid after being rinsed with ultrapure water, so that the metal impurities in the surface layer of the silicon powder are removed. | 02-09-2012 |
20120032312 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S | 02-09-2012 |
20120029834 | METHOD FOR DETERMINING COP GENERATION FACTORS FOR SINGLE-CRYSTAL SILICON WAFER - A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP density | 02-02-2012 |
20120028547 | SEMICONDUCTOR WAFER POLISHING METHOD AND POLISHING PAD SHAPING JIG - Disclosed is a semiconductor wafer polishing method for polishing the surfaces to be polished of semiconductor wafers by use of polishing pads ( | 02-02-2012 |
20120021558 | SEMICONDUCTOR SUBSTRATE FOR SOLID-STATE IMAGE SENSING DEVICE AS WELL AS SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. | 01-26-2012 |
20120012983 | SILICON WAFER AND METHOD OF MANUFACTURING SAME - This method of manufacturing a silicon wafer has a step of preparing a wafer, in which a surface of the silicon wafer is surface-treated, a step of setting stress, in which the stress S (MPa) subjected on the wafer is set, a step of inspecting, in which a defect on a surface of the wafer is inspected, and a step of determining, in which the wafer is evaluated if the wafer satisfies a criterion. In this method, it is possible to manufacture a wafer with cracking resistance even if it is subjected to a millisecond annealing by the FLA annealing treatment. | 01-19-2012 |
20110308447 | SAPPHIRE SEED AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SAPPHIRE SINGLE CRYSTAL - Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10°, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed. | 12-22-2011 |
20110298094 | EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME - An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices. | 12-08-2011 |
20110280470 | WAFER DEFECT INSPECTION APPARATUS AND METHOD FOR INSPECTING A WAFER DEFECT - It is an object to obtain an image of a wafer that is suitable for a defect inspection in an efficient manner. | 11-17-2011 |
20110263183 | POLISHING SOLUTION DISTRIBUTION APPARATUS AND POLISHING APPARATUS HAVING THE SAME - The present invention provides a polishing solution distribution apparatus capable of reducing distribution deviation of polishing solution even when leveling for installation is insufficient or inclination of an installation location varies and a polishing apparatus having the same. The polishing solution distribution apparatus includes a cone-shaped branch body in which a solution pan to store supplied polishing solution is formed and in which plural flow passages radially connected to a side face of the solution pan respectively and having a delivery port to supply polishing solution to a position lower than the connected position are formed, a support portion to support the branch body, and a universal joint mechanism to support the branch body via the support portion at a position being higher than the gravity center of the branch body. | 10-27-2011 |
20110263126 | METHOD FOR MANUFACTURING A SILICON WAFER - Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio of V/G (mm | 10-27-2011 |
20110259260 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL - A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table. | 10-27-2011 |
20110259259 | METHOD FOR MANUFACTURING A SILICON WAFER - Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot. | 10-27-2011 |
20110248372 | EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of gm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed. | 10-13-2011 |
20110240618 | LASER PROCESSING METHOD FOR TRANSPARENT MATERIAL - Laser processing methods are provided that are capable of processing a surface to be processed of a transparent material with a high accuracy even if the transparent material has a rear surface with a large roughness or has defects therein. The laser processing methods for processing a transparent material using a laser light, can include: attaching a laser light absorbing substance having an absorption coefficient for the laser light of 1 μm | 10-06-2011 |
20110239931 | EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF - An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a <100> orientation parallel to the {110} plane toward a <100> direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer. | 10-06-2011 |
20110194753 | IMAGE DATA PROCESSING METHOD AND IMAGE CREATING METHOD - [Problem] Provided is a method of processing image data capable of, at the time of measuring a wafer in a circumferential direction thereof using a surface inspection device employing a laser scattering method to create a Haze map, reducing or removing occurrence of a noise resulting from change in detection sensitivity of the device. Further, provided is a method of creating an image by using the method of processing an image data. | 08-11-2011 |
20110189805 | METHOD OF PRODUCING SILICON WAFER, EPITAXIAL WAFER AND SOLID STATE IMAGE SENSOR, AND DEVICE FOR PRODUCING SILICON WAFER - An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized. | 08-04-2011 |
20110171885 | METHOD FOR SHAPE MODIFICATION OF POLISHING PAD - A polishing pad shape measured by a polishing pad shape measuring apparatus is modified into a target shape of a polishing pad by using a dressing tool so that a wafer has a desired surface shape. The invention is a method for shape modification of a polishing pad | 07-14-2011 |
20110171814 | SILICON EPITAXIAL WAFER AND PRODUCTION METHOD FOR SAME - A method for preparing a silicon epitaxial wafer that includes a silicon single crystal wafer sliced from a CZ silicon ingot doped with carbon in a concentration range of not less than 5×10 | 07-14-2011 |
20110142577 | SEMICONDUCTOR MANUFACTURING PLANT - A wafer manufacturing factory manufacturing semiconductor wafers and a device manufacturing factory manufacturing semiconductor devices are provided abutting each other via a conveying zone including a clean room, and the wafers are held by a conveying apparatus to be conveyed from the wafer manufacturing factory to the device manufacturing factory without being stored in a carrying case. | 06-16-2011 |
20110140241 | PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT - A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot comprises includes withdrawing a silicon seed crystal ( | 06-16-2011 |
20110136267 | METHOD OF CONTROLLING FILM THINNING OF SEMICONDUCTOR WAFER FOR SOLID-STATE IMAGE SENSING DEVICE - The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes. | 06-09-2011 |
20110132255 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Since vapor-phase growth of an epitaxial film is performed on the surface of a mirror surface silicon wafer which is not subjected to final polishing, and the surface of the epitaxial film is thereafter subjected to HCl gas etching, the mirror polishing step is simplified, and the productivity is improved, that enables a reduction in cost, and it is possible to suppress the surface roughness of the epitaxial film as well. | 06-09-2011 |
20110123092 | METHOD FOR MEASURING SEMICONDUCTOR WAFER PROFILE AND DEVICE FOR MEASURING THE SAME USED THEREFOR - Disclosed is a method for measuring a profile using a device for measuring the profile in which included are: a distance measuring means | 05-26-2011 |
20110114017 | EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD - An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween. | 05-19-2011 |
20110114014 | METHOD FOR MANUFACTURING EPITAXIAL WAFER AND WAFER HOLDER USED IN THE METHOD - A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer. | 05-19-2011 |
20110114011 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL - The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of φ mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≧24−(φ/25)). | 05-19-2011 |
20110111594 | WAFER BONDING METHOD - Even for the case where a CVD oxide film is interposed at a bonding interface, as a pre-processing of bonding a first wafer and a second wafer, at least the surface roughness of the CVD oxide film of the first wafer is made small after removing organic substances. Therefore, it is possible to prevent void occurrence which is caused by the organic substances existing at and the roughness of the bonding interface of the two wafers. | 05-12-2011 |
20110089524 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same capable of reducing variations in the thickness of a semiconductor device are provided. The amount of oxygen implanted ions is less than the amount of implanted oxygen ions in the conventional epitaxial SIMOX wafers. Oxygen is ion-implanted into the surface layer of a silicon wafer from the surface of the wafer. Then, by heat treating the wafer, a thinning stop layer, which is an imperfect buried oxide film, is formed along the entire plane of the wafer. As a result, variation of the thickness of the semiconductor device formed in an active layer can be reduced, since the, the reliability of the accuracy of the end point of silicon wafer thinning is higher than that of a thinning using the conventional deep trench structure as an end point detector. | 04-21-2011 |
20110086494 | METHOD OF REMOVING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE - To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. | 04-14-2011 |
20110084367 | EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME - A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the whole area in the ion implanted layer; performing heat treatment of the silicon wafer after implanting boron ions, thereby forming a thinning-stopper layer including a mixture of silicon particles, silicon oxides, and boron, and forming an active layer in the silicon wafer on the surface side of the thinning-stopper layer; and forming an epitaxial layer on the surface of the silicon wafer after the heat treatment. | 04-14-2011 |
20110076830 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 03-31-2011 |
20110065365 | GRINDING METHOD AND GRINDING APPARATUS FOR POLISHING PAD FOR USE IN DOUBLE-SIDE POLISHING DEVICE - The present invention provides an apparatus capable of uniformly grinding an polishing pad. Further, the present invention provides a method of grinding an polishing pad by using the grinding apparatus. Specifically, the present invention provides a method of, in a double-side polishing device having a carrier for holding a work, a pair of upper and lower rotating surface plates disposed to face each other to sandwich the carrier therebetween, and the polishing pad provided on each of the facing surfaces of the rotating surface plates for polishing the work, grinding the polishing pad, the method comprising the steps of: separating the upper and the lower rotating surface plates away from each other when the polishing pads on the upper and the lower rotating surface plates are to be ground; inserting, between the separated upper and lower rotating surface plates, an arm having at a front end portion thereof a grinding plate of a diameter smaller than those of the rotating surface plates; and pressing the grinding plate against the polishing pad of each of the rotating surface plates and rotating the grinding plate, thereby grinding the polishing pad of each of the rotating surface plates. The present invention also provides an apparatus which enables the grinding method described above. | 03-17-2011 |
20110065258 | METHOD OF PRODUCING BONDED SUBSTRATE - A bonded wafer is thinned from an active layer wafer side, and a thinning stop layer is exposed. Thereafter, the layer is made porous in an HF solution, and then the layer is polished and removed. Thus, the removal of the layer is easy; productivity of substrates is high; no defect is caused due to heat treatment; and evenness in polish amount within a wafer surface can be maintained. | 03-17-2011 |
20110056428 | METHOD OF PRODUCING SINGLE CRYSTAL SILICON - The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up. | 03-10-2011 |
20110052923 | METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER - An epitaxial wafer is produced by a method comprising steps of growing a silicon single crystal ingot having a given oxygen concentration through Czochralski method, cutting out a wafer from the silicon single crystal ingot, subjecting the wafer to a heat treatment at a given temperature for a given time, and epitaxially growing the wafer. | 03-03-2011 |
20110049664 | EPITAXIAL SUBSTRATE FOR BACK-ILLUMINATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a gettering sink immediately below a surface of a high-oxygen silicon substrate, forming a first epitaxial layer on the surface of the high-oxygen silicon substrate, and forming a second epitaxial layer on the first epitaxial layer, in which the step of forming the gettering sink includes forming an oxygen precipitate region by applying a long-time heat treatment at a temperature of 650-1150° C. to the high-oxygen silicon substrate. | 03-03-2011 |
20110048396 | WIRE SAW DEVICE - An object of the present invention is to provide at a relatively cheap price a wire saw device capable of effectively preventing slurry from splashing onto the top surface of a work and effectively suppressing increase in nanotopography and Warp. The wire saw device | 03-03-2011 |
20110036860 | SINGLE-CRYSTAL GROWTH APPARATUS AND RAW-MATERIAL SUPPLY METHOD - A single-crystal growth apparatus includes: a raw-material accumulation tube housed in a pull chamber; a bottom lid attached to a lower end opening of the raw-material accumulation tube; a shaft connected to the bottom lid to lift/lower the accumulation tube and bottom lid; a forward/backward movable raw-material guide tube having a leading end to be inserted through a side wall of the pull chamber into the raw-material accumulation tube; and a raw-material supply apparatus for supplying solid raw materials through the raw-material guide tube into the raw-material accumulation tube, in which the solid raw materials are supplied from the raw-material supply apparatus, through the raw-material guide tube, to the raw-material accumulation tube with the leading end of the raw-material guide tube being inserted into the raw-material accumulation tube, so as to accumulate the solid raw materials, and the bottom lid is lowered to drop the solid raw materials into a crucible. Thus a large amount of raw-material melt can be formed efficiently in the crucible during growth of single crystal. | 02-17-2011 |
20110031592 | SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF - Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode). | 02-10-2011 |
20110027969 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer. | 02-03-2011 |
20110025838 | METHOD AND APPARATUS FOR INSPECTING DEFECTS IN WAFER - An object of the present invention is to simplify the defect inspection of an internal defect and front and rear surface defects in a wafer. A defect inspection method of the present invention includes: a first imaging step of taking a transmitted image of a wafer | 02-03-2011 |
20110021025 | METHOD FOR PRODUCING LASER-MARKED SEMICONDUCTOR WAFER - A laser-marked semiconductor wafer having a good flatness in the vicinity of laser mark-printed sites is produced by a method comprising a slicing step; a planarization step; a laser mark printing step; a grinding step; an etching step; and a polishing step. | 01-27-2011 |
20100327397 | METHOD FOR MANUFACTURING SIMOX WAFER AND SIMOX WAFER - This method for manufacturing a SIMOX wafer includes: forming a mask layer on one surface side of a silicon single crystal wafer, which has an opening on a region where a BOX layer is to be formed; implanting oxygen ions through the opening of the mask layer into the silicon single crystal wafer to a predetermined depth, and locally forming an oxygen implantation region; annealing the silicon single crystal wafer with the mask layer, and oxidizing the oxygen implantation region so as to form the BOX layer; and removing a coated oxide film that covers the whole silicon single crystal wafer which is formed in the annealing of the silicon single crystal wafer, wherein the mask layer has a lamination comprising an oxide film and either one or both of a polysilicon film and an amorphous silicon film. | 12-30-2010 |
20100326349 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND VITREOUS SILICA CRUCIBLE - Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V | 12-30-2010 |
20100319613 | SILICON MONOCRYSTAL GROWTH METHOD - Silicon monocrystal growth is ended before a liquid surface of a melt reaches a corner portion of a quartz crucible, and thus dislocation of a silicon monocrystal can be reduced and reduction in yield can be prevented. | 12-23-2010 |
20100319612 | METHOD OF PRODUCING SILICON SINGLE CRYSTAL - In a method of producing a silicon single crystal through a Czochralski method, the pulling process includes a process of conducting a neck trial pulling for the formation of a neck portion after a seed crystal is dipped into a melt and before a neck actual pulling for the formation of a neck portion is conducted, and it is judged whether or not a temperature of the melt is a temperature suitable for the formation of the neck portion from a change of a diameter in the neck portion formed by the neck trial pulling. | 12-23-2010 |
20100319611 | Method and apparatus for controlling the growth process of a monocrystalline silicon ingot - The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot. | 12-23-2010 |
20100311199 | METHOD OF PRODUCING EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE, AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE - A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof, condensing the laser beam to an arbitrarily selected portion of the semiconductor substrate, thereby causing multi-photon absorption process to occur in the portion, and forming a gettering sink having a modified crystal structure; and epitaxially growing at least two epitaxial layers on the semiconductor substrate in which the gettering sink is formed. | 12-09-2010 |
20100309461 | METHOD FOR JUDGING WHETHER SEMICONDUCTOR WAFER IS NON-DEFECTIVE WAFER BY USING LASER SCATTERING METHOD - A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided. | 12-09-2010 |
20100304552 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE DEDICATED TO SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region. | 12-02-2010 |
20100288192 | METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER - A silicon oxide film on a wafer front surface, including on internal surfaces of pits, is removed by hydrogen fluoride gas. The pits are thus completely filled with a film growth component at a time of epitaxial film growth. Thereby, productivity is not reduced; wafer flatness is enhanced; and micro-roughness of the wafer front surface is improved. | 11-18-2010 |
20100285655 | METHOD OF PRODUCING BONDED WAFER - In the production of a bonded wafer by bonding a silicon wafer for active layer with an internal oxide film to a silicon wafer for support layer directly or indirectly with an insulating layer to form a silicon wafer composite and removing an upperlayer-side silicon portion and the internal oxide film of the silicon wafer composite to leave only an active layer with a given thickness, the active layer forming step is conducted only by polishing under given conditions. | 11-11-2010 |
20100261341 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased. | 10-14-2010 |
20100253776 | APPARATUS FOR REMOVING REFLECTED LIGHT - An apparatus for removing reflected light is provided, which is used for a measuring device that emits a sheet-like beam of light onto suspended particles and measures light scattered from the suspended particles. The apparatus includes a light introduction unit, a light reflective unit, a light sealing unit and a light absorption member. The light introduction unit has a first aperture, a second aperture, and a passage through which the light travels from the first aperture to the second aperture. The light reflective unit disposed opposite to the second aperture allows the light having traveled through the second aperture to reflect toward a predetermined direction so as to prevent the light from returning into the second aperture. The light sealing unit in which the light reflective unit is disposed has an inner wall to confine the light reflected from the light reflective unit. | 10-07-2010 |
20100252070 | METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER - After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even. | 10-07-2010 |
20100248447 | METHOD FOR PRODUCING A BONDED WAFER - In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×10 | 09-30-2010 |
20100242832 | SEED CRYSTAL FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL BY USING THE SEED CRYSTAL - Provided is a seed crystal for pulling a silicon single crystal that can reduce generation of slip dislocation due to thermal shock that occurs at the time of contact with a silicon melt, suppress propagation of this slip dislocation, and eliminate dislocation even though a diameter of a neck portion is larger than that in conventional examples. The seed crystal for pulling a silicon single crystal according to the present invention is an improvement in a seed crystal used for pulling a silicon single crystal based on a CZ method, and its characteristics configuration lies in that the seed crystal is cut out from a silicon single crystal pulled from a carbon-doped silicon melt and a concentration of carbon with which the seed crystal is doped is in the range of 5×10 | 09-30-2010 |
20100237470 | EPITAXIAL WAFER - An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from scratches in a boundary area between a rear surface and a chamfered surface of a wafer. The number of scratches in the boundary area between the rear surface and the chamfered surface is small, and thus the number of particles generated from the scratches is reduced at a time of immersion in an etching solution in the device process. Thereby, a device yield is increased. | 09-23-2010 |
20100227455 | EPITAXIAL FILM GROWING METHOD, WAFER SUPPORTING STRUCTURE AND SUSCEPTOR - An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process. | 09-09-2010 |
20100224968 | HIGH RESISTIVITY SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - This method for manufacturing a high resistivity silicon wafer includes pulling a single crystal such that the single crystal has a p-type dopant concentration at which a wafer surface resistivity becomes in a range of 0.1 to 10 kΩcm, an oxygen concentration Oi of 5.0×10 | 09-09-2010 |
20100219500 | METHOD FOR MANUFACTURING DIRECT BONDED SOI WAFER AND DIRECT BONDED SOI WAFER MANUFACTURED BY THE METHOND - A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge. | 09-02-2010 |
20100216375 | CYLINDRICAL GRINDER AND CYLINDRICAL GRINDING METHOD OF INGOT - A cylindrical grinder is disclosed that includes a support unit including an upper support device and a lower support device, in which an ingot of silicon single crystal is interposed in a direction of axis line between the upper support device and the lower support device and is clampingly held to be rotated around the axis line, and a grinding unit that relatively moves along the direction of axis line of the ingot to traverse grind an outer circumference of the ingot. The upper support device is placed at an upper position and the lower support device is placed at a lower position, so that the support unit clampingly holds the ingot in a state in which the direction of the axis line of the ingot is disposed along a vertical direction. | 08-26-2010 |
20100201976 | WAFER SURFACE MEASURING APPARATUS - A wafer surface measuring apparatus which measures a surface of the wafer by irradiating a laser beam on a wafer comprising a measuring stage that supports the outer edge of the wafer and loads the wafer in a manner not contacting the rear surface of the wafer and the stage surface, a wafer carrying means that moves the wafer over the measuring stage and loads the wafer on the measuring stage from an upward side, a rotary drive unit which rotates the measuring stage, and an ejection hole formed at a center portion of the stage surface to supply gas to a rear surface of the wafer loaded on the measuring stage. The wafer carrying means includes a chuck which sucks and holds the surface of the wafer in a non-contact manner and bends the wafer in an upwardly convex shape. | 08-12-2010 |
20100197197 | POLISHING PAD THICKNESS MEASURING METHOD AND POLISHING PAD THICKNESS MEASURING DEVICE - A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a vertical line perpendicular to the surface of the polishing pad and a second distance between an upper surface of the surface plate and the reference position on the vertical line, and calculates the thickness of the polishing pad from the difference between the first and second distances. | 08-05-2010 |
20100197047 | METHOD FOR MANUFACTURING SIMOX WAFER - At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. An in-plane temperature of a wafer held at the time of ion implantation is prevented from becoming uneven, and in-plane film thicknesses of both an SOI layer and a BOX layer are uniformed. | 08-05-2010 |
20100184270 | Method for Producing Bonded Wafer - A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions. | 07-22-2010 |
20100178750 | METHOD FOR PRODUCING BONDED WAFER - A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface. | 07-15-2010 |
20100175611 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - In this method for manufacturing a silicon single crystal, when growing the silicon single crystal, in order to control the V/G value with high accuracy so as to yield a desired defect-free region, it is important to conduct the pulling at a constant pulling rate. In the method for pulling a silicon single crystal in the present invention, in order to control the V/G value with high accuracy, the distance Δt between the melt surface of the silicon melt and the heat shielding member that is disposed so as to oppose to and to partially cover this melt surface is continuously measured while pulling (growing) the silicon single crystal. | 07-15-2010 |
20100170432 | APPARATUS FOR PULLING SILICON SINGLE CRYSTAL - An apparatus for pulling a silicon single crystal, comprising: a crucible that stores a silicon melt; a heater that heats the crucible; a crucible driving unit for rotating and/or lifting up and down the crucible; a chamber that holds the crucible and the heater; and a magnetic field applying unit that is provided outside the chamber and applies a magnetic field to the chamber, wherein the magnetic field applying unit is formed along the outer peripheral surface of the chamber such that substantially concentric circle-shaped equi-strength lines of the magnetic field are formed about a center axis of the crucible. | 07-08-2010 |
20100167425 | METHOD OF PRODUCING BONDED SILICON WAFER - A bonded silicon wafer is produced by a method comprising a step of implanting oxygen ions from one surface of a silicon wafer for active layer to form an oxygen ion implanted layer, a step of bonding the one surface of the silicon wafer for active layer to one surface of a silicon wafer for support layer and then conducting a heat treatment for strengthening the bonding to form a silicon wafer composite, a step of polishing a silicon portion at a side of the silicon wafer for active layer in the silicon wafer composite on a rotating platen having a polishing means and stopping the polishing at a time of detecting change of physical properties on the rotating platen resulting from the exposure of at least a part of the oxygen ion implanted layer and a step of removing the oxygen ion implanted layer. | 07-01-2010 |
20100159679 | MANUFACTURING METHOD FOR EPITAXIAL WAFER - To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion. | 06-24-2010 |
20100151692 | EPITAXIAL WAFER AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×10 | 06-17-2010 |
20100151597 | METHOD FOR SMOOTHING WAFER SURFACE AND APPARATUS USED THEREFOR - Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface. | 06-17-2010 |
20100148297 | SEMICONDUCTOR SUBSTRATE FOR SOLID-STATE IMAGE SENSING DEVICE AS WELL AS SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR PRODUCING THE SAME - There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. | 06-17-2010 |
20100144131 | METHOD FOR PRODUCING BONDED WAFER - A bonded wafer is produced by a step of forming an oxygen ion implanted layer, a step of forming a wafer composite, a step of exposing the oxygen ion implanted layer, and a step of obtaining an active layer, wherein the exposed oxygen ion implanted layer is removed by sequentially subjecting to a first HF treatment, a given oxidation heat treatment, and then a second HF treatment. | 06-10-2010 |
20100144119 | METHOD OF PRODUCING BONDED WAFER - In the production of a bonded wafer, a wafer for active layer after a heat treatment for bonding reinforcement followed by bonding is thinned to a given thickness by a surface polishing or an etching and then a wafer for support layer is subjected to both a minor-surface beveling and a terrace processing simultaneously. | 06-10-2010 |
20100129941 | PROCESSING METHOD FOR UNIFORMIZING FILM THICKNESS DISTRIBUTION OF LAYER HAVING PREDETERMINED FILM THICKNESS FORMED ON SURFACE OF SILICON WAFER AND PROCESSING METHOD FOR UNIFORMIZING THICKNESS DISTRIBUTION OF SILICON WAFER - In order to uniformize a film thickness distribution of a layer (e.g., an SOI layer) having predetermined film thickness formed on a surface of a silicon wafer, a processing method includes an oxidation step of forming a natural oxide film on a surface of the SOI layer and an etching step of removing, with etching liquid, the natural oxide film formed in a local thick film portion of the SOI layer while leaving a part (e.g., 1 Å to 2 Å) of the thickness. Since a main surface of the SOI layer is converted into the natural oxide film, the natural oxide film can be easily etched with hydrofluoric acid and etching processing can be locally performed. Therefore, the film thickness distribution of the SOI layer can be accurately uniformized by subjecting the thick film portion of the SOI layer to the etching processing. | 05-27-2010 |
20100127354 | SILICON SINGLE CRYSTAL AND METHOD FOR GROWING THEREOF, AND SILICON WAFER AND METHOD FOR MANUFACTURING THEREOF - A method for growing a silicon single crystal having a hydrogen defect density of equal to or less than 0.003 pieces/cm | 05-27-2010 |
20100126410 | APPARATUS AND METHOD FOR PULLING SILICON SINGLE CRYSTAL - A quartz crucible retaining silicon melt is rotated at a prescribed rotating speed, and a silicon single crystal bar pulled from the quartz crucible is rotated at a prescribed rotating speed. A first coil and a second coil having the rotating center of the crucible at the center are arranged in a vertical direction at a prescribed interval, and currents of the same direction are permitted to flow in the first and the second coils to generate a magnetic field. The first coil is arranged outside a chamber, and the second coil is arranged inside the chamber. An intermediate position of the prescribed interval between the first and the second coils is controlled to be at a surface of the silicon melt or below so that a distance between the intermediate position and the surface of the silicon melt is 0 mm or more but not more than 10,000 mm. | 05-27-2010 |
20100126407 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 05-27-2010 |
20100111802 | METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL INGOT, AND SILICON WAFER - By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect. | 05-06-2010 |
20100095881 | ARC DISCHARGE APPARATUS, APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA GLASS CRUCIBLE, AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL - The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm | 04-22-2010 |
20100095880 | Arc melting high-purity carbon electrode and application thereof - An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions on the inner surface of the crucible. The arc melting high-purity carbon electrode is a carbon electrode used to heat and melt silica powder by arc discharge, in which the density of the carbon electrode is equal to or more than 1.60 g/cm | 04-22-2010 |
20100089308 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON - A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm. | 04-15-2010 |
20100085561 | LASER SCATTERING DEFECT INSPECTION SYSTEM AND LASER SCATTERING DEFECT INSPECTION METHOD - A laser scattering defect inspection system includes: a stage unit that rotates a workpiece W and transports the workpiece W in one direction; a laser light source that emits a laser beam LB toward the workpiece W mounted on the stage unit; an optical deflector that scans the laser beam LB emitted from the laser light source on the workpiece W; an optical detector that detects the laser beam LB scattered from the surface of the workpiece W; a storage unit that stores defect inspection conditions for each inspection step of a manufacturing process of the workpiece W, where the conditions include the rotation speed and the moving speed of the workpiece W by the stage unit, the scan width on the workpiece W and the scan frequency by the optical deflector; and a control unit that reads the defect inspection conditions stored for each inspection step in the storage unit and controls the driving of the stage unit and the optical deflector under the conditions. | 04-08-2010 |
20100084743 | METHOD FOR REDUCING CRYSTAL DEFECT OF SIMOX WAFER AND SIMOX WAFER - The method includes: a first step of colliding ions implanted from a surface of a SIMOX wafer into a silicon layer underneath a BOX layer against crystal defects to destroy the crystal defects; and a second step of heating the wafer obtained in the first step to recrystallize the silicon layer. If the ions to be implanted into the silicon layer are oxygen ions, then the first step initiates ion implantation with the temperature of the SIMOX wafer being 50° C. or lower, and sets an ion dose to 5×10 | 04-08-2010 |
20100068867 | METHOD FOR PRODUCING BONDED SILICON WAFER - A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO | 03-18-2010 |
20100062588 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor substrate, in which a silicon layer is provided on a buried oxide film, includes preparing a base substrate having a seed layer of the silicon layer on the buried oxide film with a film thickness equal to or more than 1 nm and equal to or less than 100 nm, and epitaxially growing the seed layer at a temperature equal to or more than 1000° C. and equal to or less than 1300° C. so as to form the silicon layer with a film thickness equal to or more than 1 μm and equal to or less than 20 μm. | 03-11-2010 |
20100062584 | METHOD FOR PRODUCING WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE - A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a method comprising a step of forming a BOX oxide layer on at least one of a wafer for support substrate and a wafer for active layer, a step of bonding the wafer for support substrate and the wafer for active layer and a step of thinning the wafer for active layer, which further comprises a step of forming a plurality of concave portions on a bonding face of the BOX oxide layer to the other wafer and filling a polysilicon plug into each of the concave portions to form a composite layer before the step of bonding the wafer for support substrate and the wafer for active layer. | 03-11-2010 |
20100052103 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×10 | 03-04-2010 |
20100052093 | SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A semiconductor substrate is a semiconductor substrate used when an SOI substrate having an SOI structure is manufactured, in which a silicon oxide film and a silicon single crystal layer are formed on the surface of a silicon substrate. A region containing no nitrogen, which is made of a silicon single crystal layer with a thickness of 10 μm or less, is formed in the vicinity of the surface, and the nitrogen concentration of a portion excluding the region, that is, the region containing nitrogen, is in a range of 1×10 | 03-04-2010 |
20100051945 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×10 | 03-04-2010 |
20100047953 | METHOD FOR PRODUCING WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE - In the production of a wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor formed at its front surface side and a light receiving surface at its back surface side, an active layer made of a given epitaxial film is formed on a silicon wafer made of a C-containing CZ crystal directly or through an insulating film, and then subjected to a heat treatment to form precipitates containing C and O as a gettering sink at a position just beneath the active layer. | 02-25-2010 |
20100032806 | EPITAXIAL SILICON WAFER AND PRODUCTION METHOD THEREOF - Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof. | 02-11-2010 |
20100029087 | APPARATUS AND METHOD FOR ETCHING SEMICONDUCTOR WAFER - An apparatus for etching a semiconductor wafer of the present invention includes a cylindrical inner bath | 02-04-2010 |
20100029066 | SUSCEPTOR, VAPOR PHASE GROWTH APPARATUS, AND METHOD OF MANUFACTURING EPITAXIAL WAFER - An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer. | 02-04-2010 |
20100025799 | WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE, PRODUCTION METHOD THEREOF AND BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE - A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing n-type semiconductor material through a chemical oxide film having a thickness of not more than 1 nm. | 02-04-2010 |
20100025624 | ALKALI ETCHING LIQUID FOR SILICON WAFER AND ETCHING METHOD USING SAME - An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 Ω·cm using the etching liquid. | 02-04-2010 |
20100025597 | ION IMPLANTING DEVICE AND METHOD - To reduce the occurrence of stripes in the oscillation direction of a semiconductor wafer which might occur when ion implantation scanning is performed by radiating ions onto the semiconductor wafer while oscillating the semiconductor wafer like a pendulum, the ion implantation of the present invention involves radiating ions while rotating a plurality of semiconductor wafers | 02-04-2010 |
20100022066 | METHOD FOR PRODUCING HIGH-RESISTANCE SIMOX WAFER - A method for producing a high-resistance SIMOX wafer wherein oxygen diffused inside of a wafer by the heat treatment at a high temperature in an oxidizing atmosphere can be reduced to suppress the occurrence of thermal donor. In one embodiment, a heating-rapid cooling treatment is conducted after the heat treatment at a high temperature in an oxidizing atmosphere to implant vacancies from a surface of a wafer into an interior thereof to thereby easily precipitate oxygen diffused inside the wafer during the heat treatment. | 01-28-2010 |
20100021688 | WAFER MANUFACTURING METHOD AND WAFER OBTAINED THROUGH THE METHOD - A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 μm; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching. | 01-28-2010 |
20100015779 | METHOD FOR PRODUCING BONDED WAFER - There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. | 01-21-2010 |
20100012856 | WAFER HOLDING TOOL FOR ION IMPLANTING APPARATUS - A wafer holding assembly is provided that is capable of preventing the temperature difference generated between a wafer and a holding pin through beam irradiation. | 01-21-2010 |
20100009521 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a production method in which the beveling step conducted for preventing the cracking or chipping in a raw wafer during the grinding can be omitted when the raw wafer cut out from a crystalline ingot is processed into a double-side mirror-finished semiconductor wafer and a semiconductor wafer can be obtained cheaply by shortening the whole of the production steps for the semiconductor wafer and decreasing the machining allowance of silicon material in the semiconductor wafer to reduce the kerf loss of the semiconductor material as compared with the conventional method. | 01-14-2010 |
20100009155 | SEMICONDUCTOR WAFER AND PRODUCTION METHOD THEREOF - It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof. | 01-14-2010 |
20100006982 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a method of producing a semiconductor wafer which is high in the beveling accuracy and the yield for large-size wafers having a diameter of not less than 450 mm, comprising a slicing step for cutting out a disc-shaped wafer having a diameter of not less than 450 mm from a single crystal ingot, a step for lapping a surface of the wafer to conduct planarization, a step for beveling an edge portion of the wafer, a step for grinding the surface of the wafer and a step for mirror-polishing the surface of the wafer, wherein the planarizing step performs the lapping with free abrasive grains of #1000 to #1500. | 01-14-2010 |
20100006779 | ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - This ion implantation apparatus is provided with a holding devise which holds the wafer, and which turns it along its circumference. In addition to holding the wafer at a prescribed position, the ion implantation apparatus subjects the wafer to ion implantation in regions where there is partial overlap of its circumference. The holding devise turns and inclines the wafer, and also holds the wafer by three or more holding pins. The side face of the holding pin has an inversely tapered shape, and the multiple holding pins include a first holding pin whose protrusion amount is relatively small, and a second holding pin whose protrusion amount is relatively large. The holding pin which is on the upper side from the center of the wafer in the planar direction of the inclined wafer is the second holding pin, and the angle of inclination of the side face of the second holding pin at a position where ions are implanted into the wafer has an angular degree which is equal to or less than an angle of incidence of the ion beam relative to the wafer. | 01-14-2010 |
20100006022 | SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME - A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm | 01-14-2010 |
20100003811 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - A method for manufacturing an epitaxial wafer is provided, which can alleviate distortions on a back surface of the epitaxial wafer. The method for manufacturing an epitaxial wafer using a susceptor for a vapor phase growth system having a concave shaped wafer placement portion on an upper face thereof, on which a semiconductor wafer is placed, includes: an oxide film forming step in which an oxide film Ox is formed on a back surface of the semiconductor wafer; a wafer placing step in which, after the oxide film forming step, the semiconductor wafer is placed on a wafer placement portion so that the back surface of the semiconductor wafer faces downward; and an epitaxial growth step in which, after the wafer placing step, an epitaxial layer is grown on a main surface of the semiconductor wafer. | 01-07-2010 |
20090321883 | SILICON SUBSTRATE FOR SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - This method for manufacturing a silicon substrate for a solid-state imaging device, includes: a carbon compound layer forming step of forming a carbon compound layer on the surface of a silicon substrate; an epitaxial step of forming a silicon epitaxial layer on the carbon compound layer; and a heat treatment step of subjecting the silicon substrate having the epitaxial layer formed thereon to a heat treatment at a temperature of 600 and 800° C. for 0.25 to 3 hours so as to form gettering sinks that are complexes of carbon and oxygen below the epitaxial layer. This silicon substrate for a solid-state imaging device is manufactured by the above-mentioned method and includes: n epitaxial layer positioned on the surface of a silicon substrate; and a gettering layer which is positioned below the epitaxial layer and includes BMDs having a size of 10 to 100 nm at a concentration of 1.0×10 | 12-31-2009 |
20090321874 | EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF - A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer. | 12-31-2009 |
20090314964 | ION-IMPLANTING APPARATUS - An ion-implanting apparatus comprising a holding unit that holds at least a semiconductor wafer and swings the wafer along a circular orbit, wherein an ion-beam is irradiated to a region that overlaps a part of the circular orbit; the holding unit comprises three or more holding pins that hold the wafer; the holding pins include a first type holding pin at least a portion of which being in contact with an edge of the wafer is made of a material selected from a thermo-setting resin and a photo-setting resin, and a second type holding pin at least a portion of which being in contact with the wafer is made of a material that contains graphite; and the first type holding pin of the plurality of holding pins is placed at a tail end position with respect to a direction of swinging the wafer. | 12-24-2009 |
20090311949 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; and a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer. | 12-17-2009 |
20090311948 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step, a fixed grain bonded abrasive grinding step and a beveling step, in which the kerf loss is reduced and the flatness is improved. | 12-17-2009 |
20090311863 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer; and a one-side polishing step subjected to both surfaces of the semiconductor wafer after the fixed grain bonded abrasive grinding step. | 12-17-2009 |
20090311808 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step, an one-side polishing step and a chemical treating step, in which the kerf loss is reduced and the flatness is improved. | 12-17-2009 |
20090311522 | WAFER POLISHING METHOD AND WAFER PRODUCED THEREBY - A wafer is polished by a method comprising a slicing step of cutting out a wafer from a single crystal ingot and a step of polishing at least one of both surfaces and an end face of the wafer, wherein the at least one surface and end face of the wafer are simultaneously subjected to a mirror polishing. | 12-17-2009 |
20090311460 | SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm. | 12-17-2009 |
20090305518 | SOI WAFER AND MANUFACTURING METHOD THEREOF - An SOI wafer which does not generate slip dislocation even if laser annealing is performed for no more than 0.1 seconds at a maximum temperature of 1200° C. or more is provided. | 12-10-2009 |
20090305021 | FILM THICKNESS MEASUREMENT METHOD, EPITAXIAL WAFER PRODUCTION PROCESS AND EPITAXIAL WAFER - A film thickness measurement method for measuring a change in film thickness of 0.3 μm or less in a silicon wafer by FTIR, having an auxiliary film formation step for depositing an auxiliary film for measurement on a surface to be measured for the change in film thickness, an auxiliary film thickness measurement step for measuring the film thickness of the auxiliary film, a measurement step for measuring the film thickness of the auxiliary film after the change in film thickness, and a calculation step for calculating a change in film thickness of a back surface deposit from the result of the measurement step and the result of the auxiliary film thickness measurement step. | 12-10-2009 |
20090304975 | EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME - An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance. | 12-10-2009 |
20090302432 | SILICON EPITAXIAL WAFER AND THE PRODUCTION METHOD THEREOF - A silicon epitaxial wafer obtained by growing a silicon epitaxial layer on a surface of a silicon wafer having a diameter of at least 300 mm produced by slicing a silicon single crystal ingot doped with boron and germanium grown by the Czochralski method, wherein boron is doped to be at a concentration of 8.5×10 | 12-10-2009 |
20090298397 | METHOD OF GRINDING SEMICONDUCTOR WAFERS AND DEVICE FOR GRINDING BOTH SURFACES OF SEMICONDUCTOR WAFERS - A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers being ground by rotating the multiple semiconductor wafers between a pair of upper and lower rotating surface plates in a state where the multiple wafers are held on a carrier so that centers of the multiple wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the multiple wafers to an area of one of the multiple wafers is greater than or equal to 1.33 but less than 2.0; a rotational speed of the multiple wafers falls within a range of 5 to 80 rpm; and the grinding of the multiple wafers with the rotating surface plates are conducted with fixed abrasive grains in the presence of an alkali solution. | 12-03-2009 |
20090298396 | METHOD OF GRINDING SEMICONDUCTOR WAFERS, GRINDING SURFACE PLATE, AND GRINDING DEVICE - A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers by rotating the wafers between a pair of upper and lower rotating surface plates in a state where the wafers are held on a carrier so that centers of the wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the wafers to an area of one of the wafers is greater than or equal to 1.33 but less than 2.0; surfaces of the fixed abrasive grains comprised in the surface plates are comprised of pellets disposed in a grid-like fashion, with the pellets provided in a center portion and pellets provided in a peripheral portion being larger in size than the pellets provided in an intermediate portion. | 12-03-2009 |
20090298394 | METHOD OF POLISHING SILICON WAFER - A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer. | 12-03-2009 |
20090298261 | Method For Producing Bonded Wafer - A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions. | 12-03-2009 |
20090297867 | SEMICONDUCTOR THIN FILM-ATTACHED SUBSTRATE AND PRODUCTION METHOD THEREOF - An adhesive agent high in thixotropy is coated on the flat surface of a circular glass substrate in a uniform thickness, a silicon wafer equal in diameter is placed thereon, the adhesive agent is cured, and the silicon wafer is pasted together on the glass substrate. | 12-03-2009 |
20090297755 | SEMICONDUCTOR WAFER - A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm. | 12-03-2009 |
20090297426 | SILICON WAFER - When a monocrystal is pulled up, an additive element such as boron is added to a molten silicon, and a pulling-up condition is such that a solid solution oxygen concentration is equal to or higher than 2×10 | 12-03-2009 |
20090294918 | SEMICONDUCTOR WAFER - In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the semiconductor wafer is reduced when the semiconductor wafer is simple-supported in a horizontal state. | 12-03-2009 |
20090294910 | SILICON WAFER - A reinforcement member made with silicon carbide different from silicon is installed on the back face of a silicon wafer, thereby the silicon wafer is increased in Young's modulus and the wafer is less likely to deflect. | 12-03-2009 |
20090293919 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - A semiconductor wafer is cleaned by supplying a given cleaning solution to a central position of a front surface and/or a back surface of a semiconductor wafer while rotating the wafer, wherein the cleaning is conducted so as to form a water film having a thickness of 5-10 μm on a whole surface of the wafer with the cleaning solution. | 12-03-2009 |
20090293801 | PRODUCTION METHOD OF SILICON SINGLE CRYSTAL - A method of growing a single crystal, wherein the yield in terms of specific resistance is improved by improving an effective segregation coefficient without affecting other characteristics, is provided: wherein a seed crystal provided to the lower end of a wire cable is immersed in melt in a crucible, a single crystal ingot is grown on the lower end portion of the seed crystal being elevated by pulling up the wire cable while rotating the same, and a horizontal magnetic field intensity to be applied to the silicon melt is changed in accordance with crystal positions along the growing axis direction of the single crystal ingot, so that an effective segregation coefficient of a dopant along the growing axis direction in the single crystal ingot becomes small. | 12-03-2009 |
20090291621 | RECLAMATION METHOD OF SEMICONDUCTOR WAFER - Chamfer correction is performed to a chamfered portion at least on a front side of a silicon wafer after an incoming inspection. Thereby, a thickness of the chamfered portion on the front side of the wafer is restored, and thus the number of reclamation cycles of the silicon wafer can be increased. In addition, the chamfered portion is not deformed even after reclamation is repeated for a plurality of times. | 11-26-2009 |
20090290158 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer 1 including an orientation identification mark | 11-26-2009 |
20090289378 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark is smoothly joined with a portion outside of the orientation identification mark on the peripheral surface, has a planar surface that is orthogonal to an inner diameter direction of the semiconductor wafer, and has a gloss different from that in the portion outside of the orientation identification mark on the peripheral surface. | 11-26-2009 |
20090289377 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark has a terraced structure that is concave toward an inner diameter direction of the semiconductor wafer with respect to a portion outside of the orientation identification mark on the peripheral surface, and has a planar surface that is orthogonal to a diameter direction of the semiconductor wafer; and has a gloss different from that of the portion outside of the orientation identification mark on the peripheral surface. | 11-26-2009 |