ANPEC ELECTRONICS CORPORATION Patent applications |
Patent application number | Title | Published |
20150270778 | Adaptive Pre-Charge Voltage Converter - A voltage converting device includes a feedback module, for generating a comparing signal according to a feedback voltage and a reference voltage; a pulse-width-modulation module, for generating a driving signal according to comparing signal; a voltage-converting module including a low-side switch for controlling a connection between a node and ground according to driving signal, a high-side switch for controlling a connection between the node and an output end according to a control signal, an inductor coupled between the node and an input end, a feedback-voltage-generating unit for generating feedback voltage according to an output voltage of output end and a ratio, an adaptive current-generating unit for generating a current signal according to an adjusting signal, and a control unit for selecting driving signal or current signal as the control signal according to output voltage and an input voltage; and a current-adjusting module for generating adjusting signal according to comparing signal. | 09-24-2015 |
20150264456 | Power Management System and Method Thereof - A power management system coupled to a speaker module includes a monitor module for measuring a current signal and a voltage signal of the speaker module to obtain a real-time impedance information of the speaker module; a reception module for receiving a time-domain audio analogy signal to be transformed into a frequency-domain audio digital signal; a prediction module for generating a power prediction information according to an initial audio information, the real-time impedance information and the audio digital signal; a control module for generating a control signal according to the audio digital signal and a human hearing model information; and a power adjustment module for outputting an adjustment audio signal to the speaker module according to the power prediction information, the audio digital signal and the control signal, so as to perform a broadcast operation of the speaker module. | 09-17-2015 |
20150188425 | BUCK CONVERTER AND CONTROL METHOD THEREFOR - The present disclosure provides a pair of NMOSFET switches connected in series, an output filter, a control circuit, a boot-strap capacitor and a disabling circuit. A high-side MOSFET switch is coupled to an input voltage. A low-side MOSFET switch is coupled to a ground. The high-side MOSFET switch and the low-side MOSFET switch have complementary duty cycles. The output filter is coupled to the NMOSFET switches to provide an output voltage. The boot-strap capacitor is coupled to the source of the high-side MOSFET switch. The voltage crossing the boot-trap capacitor is for making the gate voltage of the high-side MOSFET switch to be higher than the input voltage. The disabling circuit senses the voltage crossing the boot-strap capacitor, and generates a control signal to control the control circuit for continuously turning off the high-side MOSFET switch when the voltage crossing the boot-strap capacitor is less than a threshold voltage. | 07-02-2015 |
20150162829 | Control Module of Constant On-Time Mode and Voltage Converting Device thereof - A control module of constant on-time mode for a voltage converting device, includes a comparing unit, for generating a comparing signal according to an enhanced feedback voltage and a comparing voltage; a feedback voltage generating unit, for generating the enhanced feedback voltage according to a voltage difference between a first reference voltage and a feedback voltage corresponding to an output voltage of the voltage converting device; a comparing voltage generating unit, for generating the comparing voltage according to a second reference voltage and a control signal; and a adjusting unit, for acquiring an average voltage of the enhanced feedback voltage and adjusting the first reference voltage according to a voltage difference between the average voltage and the second reference voltage. | 06-11-2015 |
20150137777 | ELECTRONIC SYSTEM, VOLTAGE CONVERSION CIRCUIT AND METHOD THEREOF - A voltage conversion circuit is disclosed. The voltage conversion circuit comprises an energy-storing inductor, an N-type transistor, a P-type transistor, a current comparator, a multiplexer, a first driver and a second driver. When load connected to the voltage conversion circuit is a light load, the P-type transistor will be switched off so as to avoid generating a switching current and the switching current flowing gate-source and gate-drain parasitic capacitor of the N-type transistor is generated from an input voltage. The number of N-type transistor and switching frequency also decrease accordingly so that voltage conversion efficiency of the voltage conversion circuit may be increased. | 05-21-2015 |
20150061625 | MODULATION METHOD, AND MODULATION MODULE AND VOLTAGE CONVERTING DEVICE THEREOF - A modulation method, for a voltage converting device, includes generating a first modulation signal according to an input voltage and a first output voltage; generating a second modulation signal according to the input voltage and a second output voltage; adjusting the first modulation signal and the second modulation signal according to a clock signal for making a first starting time of the first modulation signal be different from a second starting time of the second modulation signal; and generating the first output voltage and the second output voltage according to the input voltage, the first modulation signal and the second modulation signal. | 03-05-2015 |
20150061551 | FAN SYSTEM - SINGLE-PHASE DC MOTOR CONTROL CIRCUIT AND CONTROL METHOD THEREOF - A signal-phase DC motor control circuit is disclosed. The signal-phase DC motor control circuit includes a logic circuit, a switching circuit and a driving circuit. The logic circuit transmits a first logic signal, a second logic signal, a third logic signal and a forth logic signal. The switching circuit transmits a first direction driving signal according to a PWM signal and the first logic signal, and transmits a second direction driving signal according to the PWM signal and the second logic signal. The driving circuit transmits a first output signal according to the first direction driving signal and the fourth logic signal, and transmits a second output signal according to the second direction driving signal and the third logic signal. The first output signal and the second output signal are positive half-wave sinusoidal wave, and the phase difference between the first output signal and the second output signal is 180 degrees. | 03-05-2015 |
20150028830 | CURRENT-MODE BUCK CONVERTER AND ELECTRONIC SYSTEM USING THE SAME - A current-mode buck converter is disclosed, wherein the current-mode buck converter operates in a pulse width modulation (PWM) mode or a pulse frequency modulation (PFM) mode. When the current-mode buck converter enters into the PFM mode, the voltage level of the parking voltage is maintained at the voltage level of compensation voltage, so as to decrease switch loss of the current-mode buck converter operating between PWM mode and PFM mode, and stabilize the output voltage of the current-mode buck converter. | 01-29-2015 |
20150028828 | VOLTAGE CONVERSION CIRCUIT AND ELECTRONIC SYSTEM USING THE SAME - A voltage conversion circuit is disclosed. The voltage conversion circuit includes an inductor, a first switch transistor, a second switch transistor, a first resistor, a second resistor and a P type transistor. When an input voltage is larger than an output voltage and a switch signal is transited to low voltage level, a control signal is a clamping voltage and the P type transistor enters into a saturation region, so that a drain voltage of the first switch transistor is a sum of the clamping voltage and a source-gate voltage of the P type transistor. When an output voltage is larger than an input voltage and a switch signal is changed to low voltage level, the control signal is the switch signal and the P type transistor enters into a linear region, so that a drain voltage of the first switch transistor is sum of the output voltage and voltage-drop of the P type transistor. | 01-29-2015 |
20150023801 | FAN SYSTEM - ROTATION SPEED CONTROL CIRCUIT AND METHOD FOR ROTATION SPEED ERROR AUTO-CALIBRATION THEREOF - A rotation speed control circuit with function of auto-calibrating rotation speed error is disclosed. The rotation speed control circuit includes a first multiplexer, a second multiplexer, an error amplifier and a current compensation circuit. In calibration mode, the rotation speed control circuit selects a calibration clock signal and a calibration voltage through the first multiplexer and the second multiplexer correspondingly according to a mode switch signal, and adjusts current value of a first current accordingly. In other words, the rotation speed control circuit utilizes the first current to compensate error of the external capacitor through the calibration clock signal fixed and the calibration voltage fixed in the duration of calibration mode, so as to avoid that aging of the external capacitor leads to rotation speed error and then affects the whole operation. | 01-22-2015 |
20150008895 | CURRENT MODE DC-DC CONVERSION DEVICE WITH FAST TRANSIENT RESPONSE - A current mode DC-DC conversion device with fast transient response is provided. The device includes a DC-DC converter, a pulse width control unit, a current feedback circuit, a fast transient feedback circuit, a first error amplifier, an adder, and a comparator. The current feedback circuit generates a current feedback signal according to the current passing through an inductor in the DC-DC converter. The fast transient feedback circuit generates a transient feedback signal according to a first voltage feedback signal. The first error amplifier amplifies the difference value between a second voltage feedback signal and a reference signal to generate an error amplification signal. The comparator compares the error amplification signal and the summation of current feedback signal and transient feedback signal to generate a comparison signal. The comparison signal is provided to the pulse width control unit for controlling the duty cycle of the power switch. | 01-08-2015 |
20150008513 | TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A trench type semiconductor power device is disclosed. An epitaxial layer is formed on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A gate oxide layer and a trench gate are formed in the gate trench. A spacer is provided on the gate. A metal top structure on the gate is separated from a contact structure by the spacer. The contact structure extends into the epitaxial layer. A source doping region is provided in the epitaxial layer at least between the contact structure and the gate trench. | 01-08-2015 |
20140375285 | DC-DC BOOST CONVERTER - The present disclosure provides a DC-DC boost converter operating in a pulse frequency modulation mode. The DC-DC boost converter includes an inductor, a first switch, a capacitor, a second switch and a control circuit. The inductor is coupled between an input voltage node and a phase node. The first switch is coupled between the phase node and an output voltage node. The capacitor is coupled between the output voltage node and a ground. The second switch is coupled between the phase node and the ground. The control circuit controls the conducting status of the first switch and the second switch. The control circuit detects whether the voltage at the phase node is changed. When the voltage at the phase node is not changed during a predetermined time interval, the control circuit turns on the first switch. Therefore, the noise with frequency could be hear by human is avoided. | 12-25-2014 |
20140302657 | METHOD FOR FABRICATING POWER SEMICONDUCTOR DEVICE - A substrate having thereon an epitaxial layer is provided. A hard mask having an opening is formed on the epitaxial layer. A sidewall spacer is formed within the opening. A first trench is etched into the epitaxial layer through the opening. A dopant source layer is formed on the surface of the first trench. The dopants are driven into the epitaxial layer to form a doped region within the first trench. The doped region includes a first region adjacent to the surface of the first trench and a second region farther from the surface. The entire dopant source layer and the spacer are removed. A sacrificial layer is then filled into the first trench. The sacrificial layer and the epitaxial layer within the first region are etched away to form a second trench. | 10-09-2014 |
20140294205 | OUTPUT-STAGE CIRCUIT AND METHOD FOR OVER CURRENT PROTECTION THEREOF AND AUDIO AMPLIFY SYSTEM - An output-stage circuit is disclosed. The output-stage circuit includes high-side output driver, first body selector, low-side output driver, second body selector and inductance. When output current is larger than current threshold value so as to make the low-side output driver generate overcurrent, the low-side output driver controlled by second control signal is disabled, and the high-side output driver controlled by first control signal is enabled so as to create first current channel. When output current is larger than current threshold value so as to make the high-side output driver generate overcurrent, the high-side output driver controlled by the first control signal is disabled, and the low-side output driver controlled by the second control signal is enabled so as to create second current channel to avoid current flowing through low-side output driver's body, and thus reduce the output current and voltage spiking of the output voltage. | 10-02-2014 |
20140291773 | POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a plurality of epitaxial islands arranged around the cell region, and a grid type epitaxial layer in the peripheral termination region. The grid type epitaxial layer separates the plurality of epitaxial islands from one another. | 10-02-2014 |
20140213023 | METHOD FOR FABRICATING POWER SEMICONDUCTOR DEVICE - A method for fabricating a power semiconductor device is disclosed. A substrate having thereon a plurality of die regions and scribe lanes is provided. A first epitaxial layer is formed on the substrate. A hard mask is formed on the first epitaxial layer. A trench is etched into the first epitaxial layer through an opening in the hard mask. The opening and the trench both traverse the die regions and scribe lanes in their longitudinal direction. The hard mask is then removed. A second epitaxial layer is formed in the trench. After polishing the second epitaxial layer, a third epitaxial layer is formed to cover the first and second epitaxial layers. | 07-31-2014 |
20140199816 | METHOD OF FABRICATING A SUPER JUNCTION TRANSISTOR - A method of fabricating a super junction transistor is provided. A drain substrate is provided. An epitaxial layer is formed on the drain substrate. A plurality of trenches is formed in the epitaxial layer. A buffer layer is formed and is in direct contact with the interior surface of the trenches. A dopant source layer is filled into the trenches. An etching process is performed to form a plurality of recessed structures above the respective trenches. A gate oxide layer is formed on the surface of each recessed trench and the dopants inside the dopant source layer are diffused into the epitaxial layer through the buffer layer to thereby form at least a body diffusion layer of the first conductivity type. A gate conductor is filled into the recessed structures to form a plurality of gate structure units. A doped source region having the first conductivity type is formed. | 07-17-2014 |
20140197478 | POWER TRANSISTOR DEVICE WITH SUPER JUNCTION AND MANUFACTURING METHOD THEREOF - The present invention provides a power transistor device with a super junction including a substrate, a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer. The first epitaxial layer is disposed on the substrate, and has a plurality of trenches. The trenches are filled up with the second epitaxial layer, and a top surface of the second epitaxial layer is higher than a top surface of the first epitaxial layer. The second epitaxial layer has a plurality of through holes penetrating through the second epitaxial layer and disposed on the first epitaxial layer. The second epitaxial layer and the first epitaxial layer have different conductivity types. The through holes are filled up with the third epitaxial layer, and the third epitaxial layer is in contact with the first epitaxial layer. The third epitaxial layer and the first epitaxial layer have the same conductivity type. | 07-17-2014 |
20140186156 | FAN CONTROL CIRCUIT AND SYSTEM - A fan control circuit for controlling a two-wire or three wire fan in a fan control system includes: a rotational speed detecting module, for detecting a rotational speed of the fan, in order to generate a rotational speed signal; a rotational speed converting module, coupled to the rotational speed detecting module, for converting the rotational speed signal into a first voltage signal; and a feedback control module, coupled to the rotational speed converting module, for generating a fan control signal to control the fan according to the first voltage signal. | 07-03-2014 |
20140170823 | METHOD FOR FABRICATING TRENCH TYPE TRANSISTOR - A method for fabricating a trench type transistor. An epitaxial layer is provided on a semiconductor substrate. A hard mask with an opening is formed on the epitaxial layer. A gate trench is etched into the substrate through the opening. A gate oxide layer and a trench gate are formed within the gate trench. After forming a cap layer atop the trench gate, the hard mask is removed. An ion well and a source doping region are formed in the epitaxial layer. A spacer is then formed on a sidewall of the trench gate and the cap layer. Using the cap layer and the spacer as an etching hard mask, the epitaxial layer is etched in a self-aligned manner, thereby forming a contact hole. | 06-19-2014 |
20140169982 | HEAT DISSIPATION SYSTEM, ROTATION SPEED CONTROL CIRCUIT AND METHOD THEREOF - A rotation speed control circuit is disclosed. The rotation speed control circuit includes a temperature-controlled voltage duty generator, a pulse-width signal duty generator, a multiplier and a rotation speed signal generator. The temperature-controlled voltage duty generator converts temperature-controlled voltage to digital temperature-controlled voltage and executes linear interpolation operation according to a first setting data so as to output temperature-controlled voltage duty signal. The pulse-width signal duty generator coverts pulse-width input signal to a digital pulse-width input signal and executes linear interpolation operation according to a second setting data so as to output a pulse-width duty signal. The temperature-controlled voltage duty signal and the pulse-width duty signal are executed for multiplication by the multiplier so as to output mixing-duty signal. The rotation speed generator receives the mixing-duty signal and a third setting data, and executes a minimum output duty operation so as to output a pulse-width output signal. | 06-19-2014 |
20140167723 | Switching Regulator - A switching regulator includes a lower gate switch and a transient help module. The lower gate switch is utilized for turning on and turning off according to a lower gate control signal. The transient help module includes a load detecting unit, for outputting a detecting signal according to a variation of a load, and a logic circuit, for generating the lower gate control signal according to the detecting signal, to turn off the lower gate switch when the load decreases. | 06-19-2014 |
20140163700 | CONTROL DEVICE, CONTROL METHOD AND RELATED POWER MANAGEMENT SYSTEM - A control device for controlling a power management system to enter an operating mode includes a power converting device, for providing input power for the control device; an operating mode control signal, for controlling the power management system to enter the operating mode, wherein the operating mode control signal is a first signal of the power management system; and an operating result displaying signal, for displaying at least one operating result in the operating mode, wherein the operating result displaying signal is a second signal of the power management system. | 06-12-2014 |
20140159680 | Bootstrap DC-DC Converter - The present invention discloses a bootstrap DC-DC converter. The bootstrap DC-DC converter includes a lower gate driver, for generating a lower gate control signal according to a control signal; a lower gate, for turning on and turning off according to a lower gate control signal; and a bootstrap voltage maintaining circuit, for generating the control signal, such that the lower gate turns on at least a minimum off time each time. | 06-12-2014 |
20140152287 | SYNCHRONOUS DC-DC CONVERTER HAVING SOFT-STOP FUNCTION - A synchronous DC-DC converter having a soft-stop function includes an output stage for supplying an output voltage, wherein the output stage includes a high-side transistor for charging the output voltage and a low-side transistor for discharging the output voltage; an output control circuit, coupled to the output stage, for controlling the high-side transistor and the low-side transistor of the output stage; at least one protection device, for controlling the high-side transistor to be turned off when a specific situation occurs, in order to stop supplying the output voltage; and a soft-stop control circuit, coupled to the output control circuit, for controlling the low-side transistor of the output stage to be turned on when the protection device controls the high-side transistor to be turned off or the synchronous DC-DC converter is disabled, in order to discharge the output voltage. | 06-05-2014 |
20140152275 | Bootstrap Capacitor Detecting Circuit and Bootstrap DC-DC Converter Thereof - A bootstrap capacitor detecting circuit includes a current source, for providing a discharging current; a first switch, for conducting connection between a system voltage and a bootstrap voltage node according to a power-on-reset signal, to charge the bootstrap voltage node; a second switch, for conducting connection between a current source and the bootstrap voltage node according to the power-on-reset signal, to discharge the bootstrap voltage node; and a detecting unit, for determining whether a bootstrap capacitor is connected normally according to a bootstrap voltage of the bootstrap voltage node after the current source discharges the bootstrap voltage node. | 06-05-2014 |
20140145641 | Single Wire Signal Process Method and Circuit - A signal processing method for a single wire, includes receiving an input signal via the single wire, wherein the input signal includes a plurality of pulse signals; generating a plurality of bits corresponding to the plurality of pulse signals according to a plurality of widths of the plurality of pulse signals and forming a source code; and decoding the source code to generate a control code; wherein when a width of a first pulse signal of the plurality of pulse signals is smaller than a first duration, a first bit corresponding to the first pulse signal is a first bit value and when a width of a second pulse signal of the plurality of pulse signals is greater than a second duration, a second bit corresponding to the second pulse signal is a second bit value. | 05-29-2014 |
20140145258 | SEMICONDUCTOR DEVICE WITH REDUCED MILLER CAPACITANCE AND FABRICATION METHOD THEREOF - A semiconductor power device includes an epitaxial layer grown on a semiconductor substrate; an ion well with a junction depth in the epitaxial layer; a gate trench with a depth deeper than the junction depth in the ion well; a gate oxide layer in the gate trench; a gate embedded the gate trench; and a pocket doping region in the epitaxial layer. The pocket doping region is adjacent to and covers at least a corner of the gate trench. | 05-29-2014 |
20140124853 | SEMICONDUCTOR DEVICE WITH REDUCED MILLER CAPACITANCE AND FABRICATION METHOD THEREOF - A semiconductor transistor device includes an epitaxial layer grown on a semiconductor substrate; an ion well with a junction depth in the epitaxial layer; a gate trench with a depth shallower than the junction depth in the ion well; a recess at the bottom of the gate trench; a gate oxide layer at surface of the gate trench and in the recess to form a protruding tip structure; a gate in the gate trench; and a drain extension region between the gate trench and the epitaxial layer. | 05-08-2014 |
20140124852 | SEMICONDUCTOR DEVICE WITH REDUCED MILLER CAPACITANCE AND FABRICATION METHOD THEREOF - A semiconductor transistor device includes an epitaxial layer grown on a semiconductor substrate; an ion well with a junction depth in the epitaxial layer; a gate trench with a depth shallower than the junction depth in the ion well; a recess at the bottom of the gate trench; a gate oxide layer at surface of the gate trench and in the recess to form a protruding tip structure; a gate in the gate trench; and a drain extension region between the gate trench and the epitaxial layer. | 05-08-2014 |
20140111168 | Synchronous Switching Power Converter with Zero Current Detection, and Method Thereof - The synchronous switching power converter comprises an inductor; a down bridge transistor; and a zero current detection circuit comprising a zero current comparator for receiving a fixed comparing level at a negative input end for comparison to change state of a comparing result; a delay unit, for delaying the comparing result to change state of a turn off signal according to a compensation voltage, to turn off the down bridge transistor when determining current on the inductor is zero; a transient state adjusting circuit for indicating a transient period when detecting state of the turn off signal is changed; and an integrator for integrating the compensation voltage by analog manner to adjust value of the compensation voltage and providing to the delay unit within the transient period; wherein the zero current comparator determines the integrator to integrate positively or negatively within the transient period. | 04-24-2014 |
20140099762 | MANUFACTURING METHOD OF TRENCH TYPE POWER TRANSISTOR DEVICE WITH SUPER JUNCTION - The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an epitaxial layer of a second conductive type is formed on the substrate. Next, a through hole is formed in the epitaxial layer, and the through hole penetrates through the epitaxial layer. Two doped drain regions of the first conductivity type are then formed in the epitaxial layer respectively at two sides of the through hole, and the doped drain regions extend from a top surface of the epitaxial layer to be in contact with the substrate. | 04-10-2014 |
20140097811 | CURRENT-LIMIT SYSTEM AND METHOD - A current-limit system for limiting an average current of an output signal of a DC-DC converter includes a current sensing device, coupled to the DC-DC converter, for detecting the average current of the output signal of the DC-DC converter; and a current-to-voltage converting module, coupled to the current sensing device, for converting the average current into a clamp voltage, in order to control the DC-DC converter according to the clamp voltage. | 04-10-2014 |
20140087540 | METHOD FOR FORMING TRENCH ISOLATION - A trench isolation method is disclosed. A substrate having thereon a pad layer and a hard mask is provided. An opening is formed in the hard mask. The substrate is etched through the opening to thereby form a first trench. A spacer is formed on a sidewall of the first trench. A second trench is then etched into the substrate through the first trench by using the spacer as an etching hard mask. The substrate within the second trench is then oxidized by using the spacer as an oxidation protection layer, thereby forming an oxide layer that fills the second trench. The spacer is then removed to reveal the sidewall of the first trench. A liner layer is then formed on the revealed sidewall of the first trench. A chemical vapor deposition process is then performed to deposit a dielectric layer that fills the first trench. | 03-27-2014 |
20140070776 | Switching Regulator - A switching regulator for outputting an output voltage is disclosed. The switching regulator includes an upper gate switch, for turning on and turning off according to an upper gate control signal; a lower gate switch, coupled to the upper gate switch, for turning on and turning off according to a lower gate control signal; and a logic circuit, for generating the lower gate control signal according to a lower gate off signal. The lower gate switch turns off during an activation period of the switching regulator. | 03-13-2014 |
20140065795 | METHOD FOR FORMING TRENCH ISOLATION - A trench isolation method is disclosed. A substrate having thereon a pad layer and a hard mask is provided. An opening is formed in the hard mask. The substrate is etched through the opening to thereby form a first trench. A spacer is formed on a sidewall of the first trench. A second trench is then etched into the substrate through the first trench by using the spacer as an etching hard mask. The substrate within the second trench is then oxidized by using the spacer as an oxidation protection layer, thereby forming an oxide layer that fills the second trench. The spacer is then removed to reveal the sidewall of the first trench. A liner layer is then formed on the revealed sidewall of the first trench. A chemical vapor deposition process is then performed to deposit a dielectric layer that fills the first trench. | 03-06-2014 |
20140062592 | POP-FREE SINGLE-ENDED OUTPUT CLASS-D AMPLIFIER - A pop-free single-ended output class-D amplifier includes: an input signal generator for generating an input signal; a power supply for supplying input power; a reference voltage generator for generating a reference voltage; a gain-adjustable stage for generating an amplified signal according to the reference voltage and adjusting a gain of the single-ended output class-D amplifier; a pulse width modulation module for outputting a pulse width modulation signal according to the reference voltage, the amplified signal, and the input power; a low-pass filter for low-pass filtering the pulse width modulation signal to generate an output voltage; and a logic controller for generating at least one control signal to control the reference voltage generator, the gain-adjustable stage, and the pulse width modulation module according to the input power, the reference voltage, and the pulse width modulation signal. | 03-06-2014 |
20140062535 | Power-on Reset Circuit - A power-on reset circuit is disclosed. The power-on reset circuit includes a first resistor; a first transistor, including a first terminal coupled to a second terminal of the first resistor, and a control terminal for receiving a reference voltage; a second resistor, including a first terminal coupled to a second terminal of the first transistor; a second transistor, including a first terminal coupled to a second terminal of the first resistor, and a control terminal coupled to a second terminal of the second transistor and utilized for receiving an input voltage; and a comparator, including a first input terminal for receiving a comparison voltage, and a second input terminal for receiving the reference voltage, for generating a power-on reset signal according to the comparison voltage and the reference voltage. | 03-06-2014 |
20140051220 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED MILLER CAPACITANCE - A method for fabricating a semiconductor transistor device. An epitaxial layer is grown on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A spacer is formed on a sidewall of the gate trench. A recess is formed at the bottom of the gate trench. A thermal oxidation process is performed to form an oxide layer in the recess. The oxide layer completely fills the recess. The spacer is then removed. A gate oxide layer is formed on the exposed sidewall of the gate trench. A gate is then formed into the gate trench. | 02-20-2014 |
20140028232 | Motor Driving Circuit and Method - A motor driving circuit for driving a direct-current (DC) motor, includes a driving circuit for converting an input voltage into a first and a second output voltages, a Hall sensor for generating a first and a second time sequential control signals according to a working condition of the DC motor, a current sensing unit for detecting a motor current through the DC motor and comparing the motor current to a reference current to generate a comparison result and determine a first transition voltage selector value accordingly, and a control unit coupled to the driving circuit, the current sensing unit and the Hall sensor for controlling a working status of the driving circuit according to the first and the second time sequential control signals and the first transition voltage selector value. | 01-30-2014 |
20140021901 | Driving circuit and method for fan - A driving circuit for a fan includes an initiation module for generating a switch signal according to a feedback signal, a control module coupled to the initiation module for generating a control signal according to the switch signal and a predetermined comparison signal, so as to drive the fan for a rotational operation, and a feedback module coupled to the fan for generating the feedback signal according to a conduction result of the fan, wherein the control module utilizes a pulse frequency modulation technique to generate the control signal, and the conduction result is realized via a voltage type or a current type to correspond to a rotational speed of the rotational operation. | 01-23-2014 |
20140021899 | Driving circuit and method for fan - A driving circuit for driving a fan with a plurality of operational modes includes an initiation module for generating a switch signal according to a feedback signal, a control module coupled to the initiation module for utilizing a pulse frequency modulation technique to generate a control signal according to the switch signal and a predetermined comparison signal, so as to drive the fan for a rotational operation, and a feedback module coupled to the fan for generating the feedback signal according to a conduction result of the fan. The rotational operation includes the plurality of operational modes, and the fan is switched between the plurality of operational modes according to different conduction results of the fan. | 01-23-2014 |
20140015503 | BOOT-STRAP CIRCUIT AND VOLTAGE CONVERTING DEVICE THEREOF - A boot-strap circuit for a voltage converting device includes a boot-strap capacitor; a charging module, for charging the boot-strap capacitor; and a protection module, for detecting a capacitor voltage of the boot-strap capacitor and adjusting conducting statuses of one of an upper-bridge switch and a lower-bridge switch of the voltage converting device according to the capacitor voltage and a duty cycle signal utilized for controlling conducting statuses of the upper-bridge switch and the lower-bridge switch. | 01-16-2014 |
20140015040 | POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A power semiconductor device includes a substrate, a semiconductor layer grown on the substrate, a plurality of alternately arranged first conductivity type doping trenches and second conductivity type doping trenches in the semiconductor substrate, a first diffusion region of the first conductivity type around each of the first conductivity type doping trenches, and a second diffusion region of the second conductivity type around each of the second conductivity type doping trenches, wherein distance between an edge of the first conductivity type doping trench and PN junction between the first and second diffusion regions substantially equals to a distance between an edge of the second conductivity type doping trench and the PN junction. | 01-16-2014 |
20130307458 | Motor Driving Circuit and Method Thereof - A motor driving circuit for driving a motor includes: a driving-stage circuit, for converting an input voltage into a first output voltage and a second output voltage, and comprising a first transistor, a second transistor, a third transistor and a fourth transistor; an output stage circuit, for converting the first output voltage or the second output voltage into a motor speed signal; and a control unit, coupled to the first, the second, the third and the fourth transistors and the output stage circuit, for generating first, second, third and fourth transistor control signals to control the first, the second, the third and the fourth transistors respectively. | 11-21-2013 |
20130307064 | POWER TRANSISTOR DEVICE AND FABRICATING METHOD THEREOF - The present invention provides a power transistor device including a substrate, a first epitaxial layer, a doped diffusion region, a second epitaxial layer, a doped base region, and a doped source region. The substrate, the first epitaxial layer, the second epitaxial layer and the doped source region have a first conductive type, and the doped diffusion region and the doped base region have a second conductive type. The first epitaxial layer and the second epitaxial layer are sequentially disposed on the substrate, and the doped diffusion region is disposed in the first epitaxial layer. The doped base region is disposed in the second epitaxial layer and contacts the doped diffusion region, and the doped source region is disposed in the doped base region. A doping concentration of the second epitaxial layer is less than a doping concentration of the first epitaxial layer. | 11-21-2013 |
20130293211 | Method and Apparatus for All Duty Current Sensing in Current Mode Converter - A current sensing apparatus for a voltage converter apparatus includes a circuit selection module for generating a circuit selection result according to a clock signal and a duty cycle signal; a current sensing module coupled to the circuit selection module, an up-bridge circuit and a down-bridge circuit of the voltage converter apparatus for measuring an up-bridge conduction current and a down-bridge conduction current according to the circuit selection result; and a current generation module coupled to the current sensing module and a slope compensation circuit of the voltage converter apparatus for generating a sensing voltage according to a slope compensation current, the up-bridge conduction current or the down-bridge conduction current, so as to adjust the duty cycle signal of the controller. The current sensing apparatus utilizes the duty cycle signal to drive the voltage converter apparatus. | 11-07-2013 |
20130293203 | Current Balance Circuit and Multiphase DC-DC Converter and Current Balance Method Thereof - The present invention discloses a current balance circuit for a multiphase DC-DC converter. The current balance circuit comprises a current error calculation circuit, for generating a plurality of current balance signals indicating imbalance levels of a plurality of inductor currents of a plurality of channels of the multiphase DC-DC converter according to a plurality of current sensing signals of the plurality of channels, a time shift circuit, for adjusting pulse widths of a plurality of clock signals according to the plurality of current balance signals, and a ramp generator, for deciding shift levels of a plurality of ramp signals according to the plurality of clock signals. | 11-07-2013 |
20130285738 | Voltage Generator With Adjustable Slope - A charging circuit includes a first current mirror including a first branch circuit, a second branch circuit and a third branch circuit for generating a first conduction current, a second conduction current and a third conduction current according to the input voltage, a second current mirror including a fourth branch circuit coupled to the first branch circuit and including a first channel width, and a fifth branch circuit coupled to the second branch circuit and including a second channel width, wherein a load circuit is coupled between the first current mirror and the second current mirror, and the first current mirror as well as the second current mirror correspondingly adjust values of the first conduction current, the second conduction current and the third conduction current according to the first channel width as well as the second channel width, so as to process a charging operation of the load circuit. | 10-31-2013 |
20130285733 | Voltage Generator With Adjustable Slope - A charging circuit includes a first current mirror for receiving an input voltage, a second current mirror including a first branch circuit and a second branch circuit for receiving the input voltage, a switch transistor coupled to the first current mirror and the first branch circuit for determining a conduction condition of the switch transistor according to a switch signal, a first resistor including a first resistance and one end coupled to the switch transistor, and a second resistor including a second resistance and one end coupled the second branch circuit of the second current mirror, wherein the first current mirror and the second current mirror perform a charging operation of a loading circuit according to the first resistance and the second resistance. | 10-31-2013 |
20130285632 | Soft Start Scheme Under Low Voltage Power - A soft start circuit includes an error amplifier for generating a control signal according to an input voltage, a feedback voltage and a reference voltage, a feedback circuit for generating the feedback voltage according to an output voltage, an internal voltage source for generating a soft start voltage, and a sink circuit including a first transformation module for generating a first transformation current according to the soft start voltage, a second transformation module for generating a second transformation current according to the feedback voltage, a comparison module coupled to the first transformation module and the second transformation module for generating a comparison result according to the first transformation current and the second transformation current, and an output module coupled to the comparison module for generating a sink current according to the comparison result, so as to control the control signal. | 10-31-2013 |
20130278231 | Duty Cycle Generator and Power Converter - A duty cycle generator for generating a duty cycle signal to a power converter is disclosed. The duty cycle generator includes a first inverter, a second inverter, a signal protection unit including an input terminal coupled to the duty cycle signal for generating a break pulse to generate a protected duty cycle signal, a comparator for comparing a triangle-wave signal with a comparison signal to generate a comparison result, a NOR gate for generating a reset signal according to the comparison result and the protected duty cycle signal, an SR-latch for outputting a turn-on signal according to the clock signal and the reset signal, and an AND gate for generating the duty cycle signal according to the inverted clock signal and the turn-on signal. | 10-24-2013 |
20130257403 | Constant-On-Time Generation Circuit and Buck Converter - A constant-on-time generation circuit for generating a turn-on signal to a buck is disclosed. The constant-on-time generation circuit includes a capacitor, a current source, a second resistor, an inverter, a transistor coupled to the inverter for generating a set turn-on signal according to a first front-end driver signal of the buck converter, a comparator including a negative input terminal coupled to a reference voltage, a positive input terminal coupled to the second resistor and the current source, and an output terminal, for comparing the reference voltage with the set turn-on signal to output a comparison result, and an SR-latch for outputting a turn-on signal to a driver stage circuit of the buck converter according to a trigger signal of the buck converter and the comparison result. | 10-03-2013 |
20130252408 | METHOD FOR FABRICATING SCHOTTKY DEVICE - A method for fabricating a Schottky device includes the following sequences. First, a substrate with a first conductivity type is provided and an epitaxial layer with the first conductivity type is grown on the substrate. Then, a patterned dielectric layer is formed on the epitaxial layer, and a metal silicide layer is formed on a surface of the epitaxial layer. A dopant source layer with a second conductivity type is formed on the metal silicide layer, followed by applying a thermal drive-in process to diffuse the dopants inside the dopant source layer into the epitaxial layer. Finally, a conductive layer is formed on the metal silicide layer. | 09-26-2013 |
20120252176 | METHOD FOR FABRICATING A POWER TRANSISTOR - A method for fabricating a power transistor includes: (a) forming a trench in a substrate with a first electrical type; (b) diffusing second electrical type carriers into the substrate from the trench such that the substrate is formed into a first part and a second part that is diffused with the second electrical type carriers and that adjoins the trench, the first and second parts being crystal lattice continuous to each other; (c) forming a filling portion in the trench, the filling portion adjoining the second part; (d) performing a carrier-implanting process in the second part and the filling portion; and (e) forming over the substrate a gate structure that has a dielectric layer and a conductive layer. | 10-04-2012 |
20120248540 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate including a first epitaxial layer that has a first electrical type, and a second epitaxial layer; a transistor that includes a source region and an insulating spacer; an inner surrounding structure including an annular trench and an insulating spacer; an outer surrounding structure that has a second electrical type opposite to the first electrical type, and that is disposed adjacent to an upper surface of the second epitaxial layer to surround and contact the inner surrounding structure; and a conductive structure connecting to the source region, and the inner and outer surrounding structures. | 10-04-2012 |
20120199903 | SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION - A semiconductor device having a super junction includes: a substrate having a first electrical type; a main body including a base part that has the first electrical type, and a modified part that has a second electrical type opposite to the first electrical type; a source zone contacting the modified part oppositely of the substrate, and having the first electrical type; and a gate structure having a dielectric layer that contacts the source zone, and a conductive layer formed on the dielectric layer oppositely of the main body. | 08-09-2012 |
20120181576 | INSULATED GATE BIPOLAR TRANSISTOR - An insulated gate bipolar transistor includes: a collector layer; a drift layer formed on and connected to the collector layer; a gate structure including a dielectric layer formed on the drift layer, and a conductive layer formed on the dielectric layer; a first emitter structure including a well region formed within the drift layer and partially connected to the dielectric layer of the gate structure, a source region formed within the well region just underneath a top surface of the well region, and a first electrode formed on the top surface of the well region and connected to the well region and the source region; and a second emitter structure spaced apart from the gate structure and the first emitter structure, and including a bypass region formed on the top surface of the drift layer, and a second electrode formed on the bypass region. | 07-19-2012 |
20090283796 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power semiconductor is a vertical insulated gate bipolar transistor with injection efficiency adjustment formed by highly doped n+ islands in a p+ anode layer. The device has a vertical drift region of a first conductivity type and having vertical first and second ends. In one example, a region of the second conductivity type is provided at the second end of the vertical drift region connected directly to the vertical high voltage terminal. In another example, a vertical buffer region of the first conductivity type is provided at the vertical second end of the vertical drift region and a vertical region of a second conductivity type is provided on the other side of the vertical buffer region and connected to the vertical high voltage terminal. A plurality of electrically floating lateral island regions are provided within the vertical drift region at or towards the vertical second end of the vertical drift region, the plurality of electrically floating lateral island regions being of the first conductivity type and being more highly doped than the drift region. | 11-19-2009 |
20090231052 | PULSE WIDTH MODULATION STRUCTURE ENABLING REGULATED DUTY CYCLE - A pulse width modulation (PWM) structure enabling regulated duty cycle includes a DC power supply unit, a signal generating unit, a voltage-dividing resistor unit, a reference voltage unit, and a comparing unit. When the DC power supply unit supplies a voltage signal to the voltage-dividing resistor unit, the latter receives the voltage signal and sets voltage levels before sending the voltage signal to the signal generating unit, so that a waveform signal generated by the signal generating unit regulates its voltage levels according to the received voltage signal before sending the waveform signal to the comparing unit. The comparing unit receives and compares the signals from the signal generating unit and the reference voltage unit, and outputs a comparison signal for driving a fan motor to operate, so that the finally output signal is substantially linear and smooth. | 09-17-2009 |
20090108786 | Motor protection device and method - A motor protection device includes a detection unit for detecting an operating state of a motor and outputting a detection signal; a reference unit for generating a variable reference signal; a discriminating unit for comparing the detection signal with the variable reference signal to discriminate whether the motor is in an abnormal condition; and a protection unit that receives a result of discrimination from the discriminating unit and limits a driving current for the motor when the motor is in an abnormal condition. The motor protection device is characterized in that the reference unit adjusts the variable reference signal according to a motor rotation detection signal, so that the motor rotation detection signal and the detection signal are used synchronously in discriminating whether the motor is in an abnormal condition, and the motor in an abnormal condition may be doubly protected. | 04-30-2009 |
20090096544 | PWM switching direct voltage circuit - The present invention relates to a pulse width modulation switching direct voltage circuit. The PWM circuit comprises a first passive device, a second passive device and a third passive device which they are connected orderly in series, and a fourth passive device which is connected in parallel between the first passive device and the second passive device, wherein the rated value of the fourth passive device is at least three times more than the rated value of the first passive device. Herewith, the voltage-cycle relationship of the PWM circuit becomes linear. Under such a state, the PWM circuit is enabled with good work efficiency. | 04-16-2009 |
20080265833 | Driving level control structure eliminating electric noise from motor - A driving level control structure eliminating electric noise from motor includes a drive control unit, a sensing unit, a setting unit, a first comparing unit, and a frequency control unit. The first comparing unit generates a first discriminating signal based on a reference level signal provided by the sensing unit and a preset level signal provided by the setting unit. The frequency control unit generates a second discriminating signal based on the first discriminating signal. The second discriminating signal is set to a specific frequency fallen out of a human ear perceptible frequency range before being sent to the drive control unit for controlling a motor coil unit to on or off as a current limiting operation, so that electric noise from a motor during the current limiting operation thereof is eliminated. | 10-30-2008 |