NVE Corporation Patent applications |
Patent application number | Title | Published |
20140098443 | MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR - A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a non-magnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field. | 04-10-2014 |
20130169271 | LOW HYSTERESIS HIGH SENSITIVITY MAGNETIC FIELD SENSOR - An MTJ sensor having low hysteresis and high sensitivity is disclosed. The MTJ sensor includes, in one embodiment, a bridge with first and second active MTJ elements and first and second passive MTJ elements connected in a Wheatstone bridge configuration. First and second magnetic shield elements are located over the first and second passive MTJ elements and form a gap therebetween that concentrates magnetic flux toward the first and second active MTJ elements. A three-dimensional coil is wound around the first and second magnetic shield elements with over-windings located over the first and second magnetic shield elements and under-windings located under the first and second magnetic shield elements, connected together by a plurality of vias adjacent the first and second magnetic shield elements. | 07-04-2013 |
20130057265 | STRESSED MAGNETORESISTIVE TAMPER DETECTION DEVICES - A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions | 03-07-2013 |
20110199073 | INVERTED MAGNETIC ISOLATOR - A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to but electrically isolated from one another with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough. This second input conductor is positioned at that side of the second current sensor opposite to that side thereof facing the substrate so as to be adjacent to but electrically isolated from one another on the substrate although having the second current sensor positioned in those magnetic fields arising from the input currents in the second input conductor. In addition, a second shield/concentrator layer of material exhibiting a substantial magnetic permeability to serve as a magnetic field concentrator is positioned at that side of the second input conductor opposite to that side thereof facing the substrate. In the first instance, the second shield/concentrator layer is electrically connected to the second input conductor, and can be so connected in the second instance. Magnetically permeable material can be provided in supporting structures. | 08-18-2011 |
20100046282 | Cross-point magnetoresistive memory - A ferromagnetic thin-film based digital memory system having memory cells interconnected in a grid that are selected through voltage values supplied coincidently on interconnections made thereto for changing states thereof and determining present states thereof through suitable biasing of grid interconnections. | 02-25-2010 |
20090251131 | Inverted magnetic isolator - A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to but electrically isolated from one another with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough. This second input conductor is positioned at that side of the second current sensor opposite to that side thereof facing the substrate so as to be adjacent to but electrically isolated from one another on the substrate although having the second current sensor positioned in those magnetic fields arising from the input currents in the second input conductor. In addition, a second shield/concentrator layer of material exhibiting a substantial magnetic permeability to serve as a magnetic field concentrator is positioned at that side of the second input conductor opposite to that side thereof facing the substrate. In the first instance, the second shield/concentrator layer is electrically connected to the second input conductor, and can be so connected in the second instance. Magnetically permeable material can be provided in supporting structures. | 10-08-2009 |
20090117370 | Vortex spin momentum transfer magnetoresistive device - A ferromagnetic thin-film based device that transitioned between alternative magnetic states thereof through having electrical currents established therethrough and has both a reference magnetization and a free layer magnetization provided therein by vortex magnetizations. | 05-07-2009 |
20090031552 | Thin-film structure magnetizable bead detector - A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors. | 02-05-2009 |
20090026900 | Apparatus for in-wall storage of bathroom implements - An in-wall storage apparatus for the sanitary storage of bathroom implements such as a plunger, toilet brush and cleansers is comprised of three primary components, namely: a housing mounted within a wall; a door assembly hingedly mounted to the housing; and a removable implement caddy slidably received within the door assembly. In a preferred embodiment, the caddy is slidably received within caddy receiving means located on the interior surface of the door. Caddy receiving means is preferably, but not essentially comprised of a shoe attached to the interior of the door and sized to accommodate at least a portion of the caddy. When in its open position, the door is preferably oriented at an incline of approximately 45 degrees to prevent the caddy and other contents from becoming accidentally dislodged and to provide a convenient position for removal of either the caddy or the implement stored therein. At least one additional storage shoe may be optionally attached to the interior of the door for storage of cleansers, disinfectants, deodorizers and the like. | 01-29-2009 |
20080247098 | Stressed magnetoresistive tamper detection devices - A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions | 10-09-2008 |
20080218157 | Magnetic particle flow detector - A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor and a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor. | 09-11-2008 |