MIMASU SEMICONDUCTOR INDUSTRY CO., LTD. Patent applications |
Patent application number | Title | Published |
20100269903 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON SUBSTRATE AND POLYCRYSTALLINE SILICON SUBSTRATE - Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids. | 10-28-2010 |
20100101726 | PROCESS CONTROL METHOD IN SPIN ETCHING AND SPIN ETCHING APPARATUS - The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time. | 04-29-2010 |
20090266414 | PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE FOR SOLAR APPLICATION AND ETCHING SOLUTION - Provided are: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric conversion efficiency, and stable in an etching rate and a pyramid shape, which is capable of uniformly forming a fine uneven structure with desired size suitable for a solar cell on the surface thereof; a semiconductor substrate for solar application having a uniform and fine pyramid-shaped uneven structure in a plane; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure, which has a high stability at initial use. The process comprises etching a semiconductor substrate with the use of an alkaline etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, salts thereof, and silicon, to thereby form an uneven structure on the surface of the semiconductor substrate. | 10-29-2009 |
20090166780 | PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE FOR SOLAR APPLICATION AND ETCHING SOLUTION - Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof, and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate. | 07-02-2009 |
20090032498 | Spin Processing Method And Apparatus - There are provided a spin processing method and a spin processing apparatus with which the improvement of a processing speed in spin processing can be compatible with the saving of a processing solution. The spin processing method comprises holding and fixing the wafer on the upper surface of the spin table, and supplying the processing solution to the surface of the wafer by the predetermined amount while rotating the spin table, to process the surface of the wafer, wherein the processing solution is supplied while the wafer is heated and maintained at the predetermined temperature, to process the wafer. The predetermined temperature for heating the wafer is equal to or higher than 25° C. | 02-05-2009 |
20090032188 | SINGLE-WAFER PROCESSOR - The present invention provides a single wafer processor structured such that similar immersion treatment to the conventional immersion treatment can be performed in the spin treatment, that a consumption of the chemical solutions can be reduced in the chemical solution treatment per wafer, that energy saving can be realized by using reaction heat of the chemical solutions to eliminate a necessity of a heating heater, that a problem of deterioration of the chemical solutions can be eliminated since the blending of the chemical solutions is implemented on the rotary disk part and the chemical solutions are used immediately thereafter, and that the maximum effective point of the chemical solutions can be utilized. The processor of the present invention includes: a rotary disk ( | 02-05-2009 |