EPIR TECHNOLOGIES, INC. Patent applications |
Patent application number | Title | Published |
20110177585 | RAPID DETECTION NANOSENSORS FOR BIOLOGICAL PATHOGENS - An apparatus for the rapid detection of multiple pathogens using a FRET-based phenomenon. A volume of fluid, possibly containing pathogens, is passed through an intake and combined with an assay solution of quantum dot/antibody-antigen/quencher complexes that dissociate and recombine with the pathogens into quantum dot/antibody-pathogen complexes. The quantum dot/antibody-antigen/quencher and quantum dot/antibody-pathogen complexes are captured on a detection filter which is illuminated by a light source. The quantum dot/antibody-pathogen complexes, but not the quantum dot/antibody-antigen/quencher complexes, fluoresce when excited by the light from the light source and the fluorescence is picked up by a photodetector, indicating the presence of the pathogens. | 07-21-2011 |
20110162697 | TUNNEL HOMOJUNCTIONS IN GROUP IV / GROUP II-VI MULTIJUNCTION SOLAR CELLS - A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel homojunction interposed between the first and second subcells. A first side of the tunnel homojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type and is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel homojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type and also is comprised of a highly doped Group IV semiconductor material. The tunnel homojunction permits photoelectric series current to flow through the subcells. | 07-07-2011 |
20110151616 | MBE GROWTH TECHNIQUE FOR GROUP II-VI INVERTED MULTIJUNCTION SOLAR CELLS - A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate. | 06-23-2011 |
20110139227 | TUNNEL HETEROJUNCTIONS IN GROUP IV / GROUP II-VI MULTIJUNCTION SOLAR CELLS - A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel heterojunction interposed between the first and second subcells. A first side of the tunnel heterojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type, is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel heterojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type, and is comprised of a highly doped Group II-VI semiconductor material. The tunnel heterojunction permits photoelectric series current to flow through the subcells. | 06-16-2011 |
20110024876 | CREATION OF THIN GROUP II-VI MONOCRYSTALLINE LAYERS BY ION CUTTING TECHNIQUES - Expungement ions, preferably including hydrogen ions, are implanted into a face of a first, preferably silicon, substrate such that there will be a maximum concentration of the expungement ions at a predetermined depth from the face. Subsequently a monocrystalline Group II-VI semiconductor layer, or two or more such layers, is/are grown on the face, as by means of molecular beam epitaxy. After this a second, preselected substrate is attached to an upper face of the Group II-VI layer(s). Next, the implanted expungement ions are used to expunge most of the first substrate from a remnant thereof, from the grown II-VI layer, and from the second substrate. In another embodiment, a group II-VI layer is grown on a first substrate silicon and an ionic implantation is conducted such that a maximum concentration of expungement ions occurs either in the silicon substrate at a predetermined depth from its interface with the II-VI layer or in the first Group II-VI semiconductor layer at a predetermined depth from the top face of the Group II-VI semiconductor layer. Thereafter all of the first substrate is expunged from the rest of the workpiece. Thin monocrystalline Group II-VI semiconductor structures may thus be mounted to substrates of the fabricator's choice; these substrates may be semiconductors, integrated circuits, MEMS structures, polymeric, metal or glass, may be flexible and may be curved. | 02-03-2011 |
20100233842 | METHOD FOR CREATING NONEQUILIBRIUM PHOTODETECTORS WITH SINGLE CARRIER SPECIES BARRIERS - A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers. | 09-16-2010 |
20100233224 | PHOTOLYTIC RELEASE OF BIOCIDES FOR HIGH EFFICIENCY DECONTAMINATION THROUGH PHOSPHOLIPID NANOPARTICLES - Biocide-filled liposome vesicles containing one or more photosensitizers are located in one or more areas for potential sterilization. Upon receiving one or more signals, the liposome vesicles are irradiated with light causing the membrane of the vesicles to break, thereby releasing the biocidal agent or agents which are distributed throughout the area. Preferred biocidal agents are hydrogen peroxide, benzalkonium chloride, and photo-oxidizing nanoparticles such as titanium dioxide, iron oxide, and certain commercially available biocides such as Ucarcide 25 and Ucarcide 50 from Dow Chemical Co. | 09-16-2010 |
20100140735 | NANOSTRUCTURES FOR DISLOCATION BLOCKING IN GROUP II-VI SEMICONDUCTOR DEVICES - A compound semiconductor workpiece with reduced defects and greater strength that uses Group II-VI semiconductor nanoislands on a substrate. Additional layers of Group II-VI semiconductor are grown on the nanoislands using MBE until the newly formed layers coalesce to form a uniform layer of a desired thickness. In an alternate embodiment, nanoholes are patterned into a silicon nitride layer to expose an elemental silicon surface of a substrate. Group II-VI semiconductor material is grown in the holes until the layers fill the holes and coalesce to form a uniform layer of a desired thickness. Suitable materials for the substrate include silicon and silicon on insulator materials and cadmium telluride may be used as the Group II-VI semiconductor. | 06-10-2010 |
20100120334 | AUTOMATED CHEMICAL POLISHING SYSTEM ADAPTED FOR SOFT SEMICONDUCTOR MATERIALS - At least one wafer is suspended on a respective jig shaft above a polishing platen. The degree of parallelism between the wafer and the polishing platen is controlled using a three-point suspension, which allows for planar pitch adjustments using vertical actuation algorithms. As the wafer is lowered into contact against the polishing platen, a load cell senses how much of the weight of the jig shaft, wafer mount and wafer continues to be supported by the jig. The vertical displacement of the wafer is controlled using a linear actuator responsive to a signal from the load cell. Vertical actuation of the wafer serves to increase or decrease this amount of supported weight, in turn decreasing or increasing the amount of applied down-force exerted between the wafer and the platen. A compression spring is used to increase the resolution of the pressure control. Finally, system components exposed to the work environment are encapsulated by chemically resistive components to prevent corrosion of system components. | 05-13-2010 |
20100105082 | RAPID DETECTION NANOSENSORS FOR BIOLOGICAL PATHOGENS - An assay test solution, a method for using, and an apparatus for the rapid detection of multiple pathogens using a FRET-based phenomenon. A volume of fluid, possibly containing pathogens, is passed through an intake and combined with an assay solution of quantum dot/antibody-antigen/quencher complexes that dissociate and recombine with the pathogens into quantum dot/antibody-pathogen complexes. The quantum dot/antibody-antigen/quencher and quantum dot/antibody-pathogen complexes are captured on a detection filter which is illuminated by a light source. The quantum dot/antibody-pathogen complexes, but not the quantum dot/antibody-antigen/quencher complexes, fluoresce when excited by the light from the light source and the fluorescence is picked up by a photodetector, indicating the presence of the pathogens. | 04-29-2010 |
20100096001 | HIGH EFFICIENCY MULTIJUNCTION II-VI PHOTOVOLTAIC SOLAR CELLS - A Group II-VI photovoltaic solar cell comprising at least two and as many as five subcells stacked upon one another. Each subcell has an emitter layer and a base layer, with the base of the first subcell being made of silicon, germanium, or silicon-germanium. The remaining subcells are stacked on top of the first subcell and are ordered such that the band gap gets progressively smaller with each successive subcell. Moreover, the thicknesses of each subcell are optimized so that the current from each subcell is substantially equal to the other subcells in the stack. Examples of suitable Group II-VI semiconductors include CdTe, CdSe, CdSeTe, CdZnTe, CdMgTe, and CdHgTe. | 04-22-2010 |
20090321642 | PHOTODETECTOR WITH DARK CURRENT REDUCTION - A detector of incident infrared radiation has a first region with a first spectral response, and a second region with a second, different spectral response. The second absorption region is stacked on the first and may be separated therefrom by a region in which the chemical composition of the compound semiconductor is graded. Separate contacts are provided to the first and second absorption regions and a further common contact is provided so as to permit the application of either a bias voltage or a skimming voltage across the respective pn junctions. The detector may be operated such that a preselected one of the absorption regions responds to incident infrared radiation of a predetermined waveband while the other absorption region acts as a skimmer of dark current, thereby enhancing the signal to noise ratio of the detector. | 12-31-2009 |
20090261442 | NONEQUILIBRIUM PHOTODETECTORS WITH SINGLE CARRIER SPECIES BARRIERS - A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region. The barrier substantially reduces flow of the carriers without relying on diffusion length of the one carriers in order to reduce the flow. | 10-22-2009 |