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Macronix International Co., Ltd.
HSINCHU, TW
1. 20090286364 METHODS OF LOW TEMPERATURE OXIDATION - method for forming a dielectric is provided 11-19-20092. 20090279349 PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE 11-12-2009
3. 20090276737 TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS 11-05-2009
4. 20090269927 METHOD FOR PITCH REDUCTION IN INTEGRATED CIRCUIT FABRICATION 10-29-2009
5. 20090262583 FLOATING GATE MEMORY DEVICE WITH INTERPOLY CHARGE TRAPPING STRUCTURE 10-22-2009
6. 20090261479 METHODS FOR PITCH REDUCTION - integrated circuit described herein includes a substrate and a plurality of lines overlying the substrate 10-22-2009
7. 20090261402 METHOD AND STRUCTURE FOR A SEMICONDUCTOR CHARGE STORAGE DEVICE 10-22-2009
8. 20090261313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME 10-22-2009
9. 20090256184 Single Gate Nonvolatile Memory Cell With Transistor and Capacitor 10-15-2009
10. 20090251944 MEMORY CELL HAVING IMPROVED MECHANICAL STABILITY 10-08-2009
11. 20090242880 THERMALLY STABILIZED ELECTRODE STRUCTURE 10-01-2009
12. 20090239358 Memory Device Manufacturing Method - method for making a memory device includes providing a dielectric material having first and second upwardly and 09-24-2009
13. 20090236743 Programmable Resistive RAM and Manufacturing Method 09-24-2009
14. 20090236639 STACKED BIT LINE DUAL WORD LINE NONVOLATILE MEMORY 09-24-2009
15. 20090219759 DOUBLE PROGRAMMING METHODS OF A MULTI-LEVEL-CELL NONVOLATILE MEMORY 09-03-2009
16. 20090213656 FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AND CHANNELS 08-27-2009
17. 20090201731 Method and Apparatus for Accessing Memory With Read Error By Changing Comparison 08-13-2009
18. 20090201725 MULTI-LEVEL MEMORY CELL PROGRAMMING METHODS 08-13-2009
19. 20090194758 HEATING CENTER PCRAM STRUCTURE AND METHODS FOR MAKING 08-06-2009
20. 20090194755 HIGH DENSITY CHALCOGENIDE MEMORY CELLS - non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side 08-06-2009
21. 20090189138 FILL-IN ETCHING FREE PORE DEVICE - memory cell includes a memory cell layer with a first dielectric layer over a bottom electrode layer 07-30-2009
22. 20090184310 MEMORY CELL WITH MEMORY ELEMENT CONTACTING AN INVERTED T-SHAPED BOTTOM ELECTRODE 07-23-2009
23. 20090177817 METHOD AND SYSTEM FOR ENHANCED READ PERFORMANCE IN SERIAL PERIPHERAL INTERFACE 07-09-2009
24. 20090176069 Mask for Controlling Line End Shortening and Corner Rounding Arising from Proximity Effects 07-09-2009
25. 20090175071 PHASE CHANGE MEMORY DYNAMIC RESISTANCE TEST AND MANUFACTURING METHODS 07-09-2009
26. 20090155978 Recessed Shallow Trench Isolation - In some embodiments a memory integrated circuit has different shallow trench isolation structures in the memory 06-18-2009
27. 20090147564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 06-11-2009
28. 20090141555 METHOD OF PROGRAMMING AND ERASING A P-CHANNEL BE-SONOS NAND FLASH MEMORY 06-04-2009
29. 20090140230 Memory Cell Device With Circumferentially-Extending Memory Element 06-04-2009
30. 20090122588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS 05-14-2009
31. 20090116293 Memory and method for charging a word line thereof 05-07-2009
32. 20090116287 OPERATION METHODS FOR MEMORY CELL AND ARRAY THEREOF IMMUNE TO PUNCHTHROUGH LEAKAGE 05-07-2009
33. 20090116286 OPERATION METHODS FOR MEMORY CELL AND ARRAY FOR REDUCING PUNCH THROUGH LEAKAGE 05-07-2009
34. 20090108345 LDMOS Device and Method of Fabrication - are provided 04-30-2009
35. 20090108331 Memory and manufacturing method thereof - memory having isolated dual memory cells is provided 04-30-2009
36. 20090104771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 04-23-2009
37. 20090103370 EFFICIENT ERASE ALGORITHM FOR SONOS-TYPE NAND FLASH 04-23-2009
38. 20090103367 ONE-TRANSISTOR CELL SEMICONDUCTOR ON INSULATOR RANDOM ACCESS MEMORY 04-23-2009
39. 20090098716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL 04-16-2009
40. 20090098678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT 04-16-2009
41. 20090096017 STACKED THIN FILM TRANSISTOR, NON-VOLATILE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 04-16-2009
42. 20090081859 Metallization process 03-26-2009
43. 20090080254 Gated Diode Nonvolatile Memory Cell Array 03-26-2009
44. 20090072216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 03-19-2009
45. 20090072215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 03-19-2009
46. 20090072211 Resistive random access memory and method for manufacturing the same 03-19-2009
47. 20090063918 APPARATUS AND METHOD FOR DETECTING WORD LINE LEAKAGE IN MEMORY DEVICES 03-05-2009
48. 20090059676 HIGH-k CAPPED BLOCKING DIELECTRIC BANDGAP ENGINEERED SONOS AND MONOS 03-05-2009
49. 20090059668 Virtual ground array memory and programming method thereof 03-05-2009
50. 20090058508 Word line boost circuit and method - word line boost circuit includes a first pump circuit, a first transistor, a voltage detection circuit and a second 03-05-2009
51. 20090057748 Memory and manufacturing method thereof - memory and a manufacturing method thereof are provided 03-05-2009
52. 20090057641 Phase Change Memory Cell With First and Second Transition Temperature Portions 03-05-2009
53. 20090046529 Biasing and shielding circuit for source side sensing memory 02-19-2009
54. 20090046506 Method and Apparatus for Programming Nonvolatile Memory 02-19-2009
55. 20090045452 Structure and Method of Sub-Gate NAND Memory with Bandgap Engineered SONOS Devices 02-19-2009
56. 20090042335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS 02-12-2009
57. 20090040829 LATERAL POCKET IMPLANT CHARGE TRAPPING DEVICES 02-12-2009
58. 20090039416 BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 02-12-2009
59. 20090039414 CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 02-12-2009
60. 20090034326 METHODS AND APPARATUS FOR THERMALLY ASSISTED PROGRAMMING OF A MAGNETIC MEMORY DEVICE 02-05-2009
61. 20090034323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 02-05-2009
62. 20090032796 PHASE CHANGE MEMORY BRIDGE CELL - Memory devices are described along with manufacturing methods 02-05-2009
63. 20090032793 Resistor Random Access Memory Structure Having a Defined Small Area of Electrical Contact 02-05-2009
64. 20090029551 Pad and method for chemical mechanical polishing 01-29-2009
65. 20090027108 Multiple-stage charge pump circuit with charge recycle circuit 01-29-2009
66. 20090023242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 01-22-2009
67. 20090022004 Charge recycling method and driving circuit and low power memory using the same 01-22-2009
68. 20090021980 Non-volatile memory and operating method thereof 01-22-2009
69. 20090020746 SELF-ALIGNED STRUCTURE AND METHOD FOR CONFINING A MELTING POINT IN A RESISTOR RANDOM ACCESS MEMORY 01-22-2009
70. 20090020740 RESISTIVE MEMORY STRUCTURE WITH BUFFER LAYER 01-22-2009
71. 20090016116 Method of Programming and Erasing a Non-Volatile Memory Array 01-15-2009
72. 20090014706 4F2 SELF ALIGN FIN BOTTOM ELECTRODES FET DRIVE PHASE CHANGE MEMORY 01-15-2009
73. 20090011574 Method for surface modification of semiconductor layer and method of manufacturing semiconductor device 01-08-2009
74. 20090003054 DOUBLE PROGRAMMING METHODS OF A MULTI-LEVEL-CELL NONVOLATILE MEMORY 01-01-2009
75. 20080315420 Metal pad formation method and metal pad structure using the same 12-25-2008
76. 20080299761 Interconnection process 12-04-2008
77. 20080291722 Charge trapping memory and accessing method thereof 11-27-2008
78. 20080282107 Method and Apparatus for Repairing Memory 11-13-2008
79. 20080274585 SPACER ELECTRODE SMALL PIN PHASE CHANGE MEMORY RAM AND MANUFACTURING METHOD 11-06-2008
80. 20080268659 HIGH TEMPERATURE METHODS FOR ENHANCING RETENTION CHARACTERISTICS OF MEMORY DEVICES 10-30-2008
81. 20080266980 METHODS FOR CONDUCTING DOUBLE-SIDE-BIASING OPERATIONS OF NAND MEMORY ARRAYS 10-30-2008
82. 20080266979 METHODS OF BIASING A MULTI-LEVEL-CELL MEMORY 10-30-2008
83. 20080266977 METHOD FOR HIGH SPEED PROGRAMMING OF A CHARGE TRAPPING MEMORY WITH AN ENHANCED CHARGE TRAPPING SITE 10-30-2008
84. 20080266933 Method and Apparatus for Refreshing Programmable Resistive Memory 10-30-2008
85. 20080259679 Programming method of magnetic random access memory 10-23-2008
86. 20080259672 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 10-23-2008
87. 20080258126 Memory Cell Sidewall Contacting Side Electrode 10-23-2008
88. 20080247224 Phase Change Memory Bridge Cell with Diode Isolation Device 10-09-2008
89. 20080246014 Memory Structure with Reduced-Size Memory Element Between Memory Material Portions 10-09-2008
90. 20080205166 TRAPPING STORAGE FLASH MEMORY CELL STRUCTURE WITH INVERSION SOURCE AND DRAIN REGIONS 08-28-2008
91. 20080203375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 08-28-2008
92. 20080197334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 08-21-2008
93. 20080197333 Programmable Resistive Memory Cell with Self-Forming Gap 08-21-2008