NATIONAL INSTITUTE OF ADVANCE INDUSTRIAL SCIENCE AND TECHNOLOGY Patent applications |
Patent application number | Title | Published |
20160003726 | APPARATUS AND METHOD FOR EVALUATING GAS BARRIER PROPERTIES - An apparatus for evaluating gas barrier properties, containing a support ( | 01-07-2016 |
20150061457 | ACTUATOR ELEMENT USING CARBON ELECTRODE - An object of this invention is to create an actuator in which the amount of deformation is maintained and no displacement in the reverse direction occurs, even when a constant voltage is continuously applied for a long period of time. | 03-05-2015 |
20140183430 | JACK FOR DISASTER RELIEF - A jack for disaster relief includes a hydrogen gas supply structure for heating a hydrogen absorbing alloy by means of a heat source and supplying a hydrogen gas absorbed in the hydrogen absorbing alloy, and an operation structure to be extended by a pressure of the hydrogen gas supplied from the hydrogen gas supply structure, to carry out an operation for lifting an object to be jacked up. The operation structure includes an operation base and a jack portion having an operation space sealed therein. The jack portion is configured to be extensible between a standby posture in which a pushup portion is stored and an extension posture in which the pushup portion is protruded upward from the operation base, and the whole operation structure can be held in a flat shape in a state in which the jack portion is retracted into the standby posture. | 07-03-2014 |
20140080714 | OXIDE SUPERCONDUCTOR THIN FILM, SUPERCONDUCTING FAULT CURRENT LIMITER, AND METHOD FOR MANUFACTURING OXIDE SUPERCONDUCTOR THIN FILM - An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided. | 03-20-2014 |
20130170285 | Drive Method for Memory Element and Storage Device Using Memory Element - In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state. | 07-04-2013 |
20130009170 | EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE - An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm | 01-10-2013 |
20120196150 | RESISTOR FILM FOR BOLOMETER - Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. | 08-02-2012 |
20100317858 | METAL COORDINATION COMPOUND AND LIGHT-EMITTING MATERIAL CONTAINING THE SAME - To provide a light-emitting device that is capable of red-light-emitting with high luminance and high efficiency and that is excellent in endurance; and a metal coordination compound metal coordination compound having a partial structure represented by formula (1) that can be used in the light-emitting device, and that can also be used in applications, such as organic electroluminescent device materials, electrochemiluminescence (ECL) device materials, emission sensors, photosensitizers, displays, photographic materials, laser dyes, color filter dyes, optical communications, color conversion filters, backlights, illuminations, photosensitizing dyes, various light sources, and the like. | 12-16-2010 |
20100297664 | PARATOPE AND EPITOPE OF ANTI-MORTALIN ANTIBODY - The amino acid sequences of paratope regions involved in internalizing function of an anti-mortalin antibody into tumor cells were determined for the L-chain and H-chain variable regions of cellular internalizing anti-mortalin antibodies and non-internalizing anti-mortalin antibodies. Cancer-cell-specific drug delivery is provided by using the mortalin-binding activity of a single-chain antibody (scFv) wherein L-chain and H-chain variable regions both having the paratope region are linked together via a peptide linker. Also, the sequence of 6 amino acids of an epitope to be recognized by an anti-mortalin antibody having the internalizing function was determined. With the use of an expression vector comprising a nucleic acid that encodes the epitope, an agent for accelerating internalization of a mortalin antibody, a drug bound thereto, and the like into cancer cells is provided. | 11-25-2010 |
20090266419 | IONIC GEL ELECTROLYTE, DYE-SENSITIZED PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL - Disclosed is a novel ionic liquid gel electrolyte having high photoelectric conversion efficiency. Also disclosed are a novel dye-sensitized photoelectric conversion device using such an ionic liquid gel electrolyte, and a solar cell composed of such a dye-sensitized photoelectric conversion device. Specifically disclosed is an ionic liquid gel electrolyte obtained by gelling a liquid electrolyte by using an ionic organic oligomer gelling agent represented by the general formulae (1) and (2) below. Also specifically disclosed are a dye-sensitized photoelectric conversion device, wherein the ionic liquid gel electrolyte is arranged between a counter electrode and a dye-absorbed semiconductor substrate which is arranged in contact with a transparent conductive substrate, and a solar cell. | 10-29-2009 |
20090140235 | Semiconductor element and process for producing the same - The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO | 06-04-2009 |