CARL ZEISS SMS GMBH Patent applications |
Patent application number | Title | Published |
20140036243 | METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK - The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask. | 02-06-2014 |
20130308125 | METHOD FOR CHARACTERIZING A STRUCTURE ON A MASK AND DEVICE FOR CARRYING OUT SAID METHOD - A method is provided for characterizing a mask having a structure, comprising the steps of: —illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, —capturing said diffraction pattern, —determining the intensities of the maxima of the adjacent diffraction orders, —determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided. | 11-21-2013 |
20130293962 | IRRADIATION MODULE FOR A MEASURING APPARATUS - An irradiation module for a measuring apparatus is provided. The irradiation module is light-conductive, is configured as a cohesive body and comprises a beam-splitting surface arranged within the irradiation module for splitting an incoming measuring beam into two partial beams. Furthermore, the irradiation module comprises an optical diffraction grating for interaction with a first of the two partial beams and a reflection surface for reflecting the second partial beam. | 11-07-2013 |
20130126728 | METHOD FOR DETERMINING THE PERFORMANCE OF A PHOTOLITHOGRAPHIC MASK - The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals. | 05-23-2013 |
20130062501 | Autofocus Device and Autofocussing Method For An Imaging Device - There is provided an autofocus device for an imaging device which has an imaging lens system with a first focal plane, an object stage for holding an object, and a first movement module for the relative movement of object stage and imaging lens system. The autofocus device comprises an image-recording module with a second focal plane, a second movement module for the relative movement of object stage and image-recording module, and a control module which controls the image-recording module for focusing the imaging device. The control module controls the first movement module such that evaluated change in distance between the object stage and the imaging lens system is carried out, and controls the second movement module such that, during the first exposure time for recording the first two-dimensional image, the object stage is moved relative to the image-recording module in a plane parallel to the second focal plane. | 03-14-2013 |
20120162755 | MASK INSPECTION MICROSCOPE WITH VARIABLE ILLUMINATION SETTING - During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure ( | 06-28-2012 |
20120160007 | METHOD AND CALIBRATION MASK FOR CALIBRATING A POSITION MEASURING APPARATUS - A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures. | 06-28-2012 |
20120121205 | DETERMINATION OF THE RELATIVE POSITION OF TWO STRUCTURES - A method is provided for determining the position of a first structure ( | 05-17-2012 |
20110242544 | METHOD AND APPARATUS FOR MEASURING STRUCTURES ON PHOTOLITHOGRAPHY MASKS - The invention relates to a method for measuring structures on masks ( | 10-06-2011 |
20110229010 | METHOD AND DEVICE FOR MEASURING THE RELATIVE LOCAL POSITION ERROR OF ONE OF THE SECTIONS OF AN OBJECT THAT IS EXPOSED SECTION BY SECTION - A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks. | 09-22-2011 |
20110210181 | APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE - An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz. | 09-01-2011 |
20110188732 | METHOD FOR ANALYZING MASKS FOR PHOTOLITHOGRAPHY - The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter. Finally, the contour data records are combined to form a three-dimensional multicontour data record with the reciprocal of the energy dose as a third dimension, and, on the basis of the transitions from zero to values different than zero in the contours, a three-dimensional profile of the reciprocal of the energy dose depending on the position on the mask is generated. This profile, the so-called effective aerial image, is output or stored or automatically evaluated. The same can also occur with sections through said profile. | 08-04-2011 |
20110183523 | METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYERS CONTAMINATED WITH GALLIUM - The invention relates to a method for electron beam induced etching of a layer contaminated with gallium ( | 07-28-2011 |
20110183517 | METHOD FOR ELECTRON BEAM INDUCED DEPOSITION OF CONDUCTIVE MATERIAL - The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate ( | 07-28-2011 |
20110183444 | METHOD FOR ELECTRON BEAM INDUCED ETCHING - The invention relates to a method for electron beam induced etching of a material ( | 07-28-2011 |
20110164313 | MICROSCOPE FOR RETICLE INSPECTION WITH VARIABLE ILLUMINATION SETTINGS - During mask inspection predominantly defects of interest which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. A further form of mask inspection microscopes serves for measuring the reticles and is also referred to as a registration tool. The illumination is used by the stated conventional and abaxial illumination settings for optimizing the contrast. The accuracy of the registration measurement is thus increased. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure ( | 07-07-2011 |
20100297362 | METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES - A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated. | 11-25-2010 |
20100270474 | Particle-Optical System - The present invention relates to a multi-beamlet multi-column particle-optical system comprising a plurality of columns which are disposed in an array for simultaneously exposing a substrate, each column having an optical axis and comprising: a beamlet generating arrangement comprising at least one multi-aperture plate for generating a pattern of multiple beamlets of charged particles, and an electrostatic lens arrangement comprising at least one electrode element; the at least one electrode element having an aperture defined by an inner peripheral edge facing the optical axis, the aperture having a center and a predetermined shape in a plane orthogonal to the optical axis; wherein in at least one of the plurality of columns, the predetermined shape of the aperture is a non-circular shape with at least one of a protrusion and an indentation from an ideal circle about the center of the aperture. | 10-28-2010 |
20100266937 | METHOD FOR REPAIRING PHASE SHIFT MASKS - The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion. | 10-21-2010 |
20100254611 | METHOD AND DEVICE FOR DETERMINING THE POSITION OF AN EDGE OF A MARKER STRUCTURE WITH SUBPIXEL ACCURACY IN AN IMAGE, HAVING A PLURALITY OF PIXELS, OF THE MARKER STRUCTURE - The position of an edge of a marker structure in an image of the marker structure is determined with subpixel accuracy. A discrete intensity profile of the edge, having profile pixels, is derived from the image pixels, and a continuous profile function of the edge is determined based on the profile pixels. Profile pixels whose intensity values are near an intensity threshold value are selected as evaluation pixels. Based on the evaluation pixels, a curve of continuous intensity is calculated. A position coordinate at which the intensity value of the continuous intensity curve matches the threshold value is selected as a first position coordinate, and the distance is determined between the first position coordinate and the position coordinate of the evaluation pixel that, from among the evaluation pixels previously selected, has the closest intensity value to the threshold value. The determined distance is compared to a predetermined threshold, and if the distance is greater than the threshold, a shift is effected, and the process iteratively performs the steps of selects the adjacent profile pixels, calculates the curve of continuous intensity, and so forth. If the distance is not greater than the threshold, the position of the edge in the captured image is determined with subpixel accuracy from all the distances determined in step g). | 10-07-2010 |
20100254591 | VERIFICATION METHOD FOR REPAIRS ON PHOTOLITHOGRAPHY MASKS - A method for verifying repairs on masks for photolithography is provided. A mask fabricated based on a mask layout is inspected for defects, and the positions at which defects are found on the mask are stored in a position file. In a repair step, the defects are repaired and, for each repaired position, in a verification step, an aerial image of the mask is taken at that position and the aerial image is analyzed to determine whether at that position the mask meets tolerance criteria established for one or more selected target parameters, and if the tolerance criteria have been met, the repair is verified. The verification can include a) based on the position file, a desired structure is defined in the mask layout at the repaired position, b) an aerial image is simulated for the desired structure, c) the captured aerial image is compared with the simulated one, and d) based on the comparison, a decision is made as to whether the repair at that position is verified. | 10-07-2010 |
20100241384 | METHOD FOR CALIBRATING A SPECIMEN STAGE OF A METROLOGY SYSTEM AND METROLOGY SYSTEM COMPRISING A SPECIMEN STAGE - A method for calibrating a specimen stage of a metrology system is provided, in which a specimen that has multiple marks is positioned successively in different calibration positions, each mark is positioned in the photography range of an optical system by means of the specimen stage in each calibration position of the specimen, and the mark position is measured using the optical system. A model is set up that describes positioning errors of the specimen stage using a system of functions having calibration parameters to be determined. The model takes into consideration at least one systematic measurement error that occurs during the measurement of the mark positions. The values of the calibration parameters are determined based on the model with consideration of the measured mark positions. | 09-23-2010 |
20100097608 | METHOD FOR DETERMINATION OF RESIDUAL ERRORS - There is provided a method for determining residual errors, compromising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used. | 04-22-2010 |
20090303316 | ENDOSCOPE APPARATUS - An endoscope device in which endoscope images and patient information can be recorded in a removable storage medium and in which the endoscope images and patient information recorded in the storage medium can be reproduced. The endoscope device has a selection means for reproducing the endoscope images in a list form and selecting at least one endoscope image from the reproduced list; a display means for inputting additional information other than the patient information, adding the additional information to the endoscope image selected by the selection means, and displaying the result; and a recording/reproduction means for recording the selected endoscope image and the additional information in the storage medium or reproducing the image and the information. | 12-10-2009 |
20090212240 | CHARGED PARTICLE BEAM EXPOSURE SYSTEM - A charged particle beam exposure system has a blanking aperture array ( | 08-27-2009 |
20090140160 | Charged particle beam exposure system and beam manipulating arrangement - A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients. | 06-04-2009 |
20080297775 | Method and Device for Analysing the Imaging Behavior of an Optical Imaging Element - The invention relates to a method for analyzing the imaging behavior of a first optical imaging element, whereby an object is imaged into an image plane by a second optical imaging element and light in the image plane is detected in a spatially resolved manner, the two optical imaging elements differing in terms of at least one imaging characteristic. Values are determined for the intensity and for at least one second characteristic of the light, said values being then stored in image points, and processed in an emulation step. An emulation image is produced, emulating the imaging of the object by the first optical imaging element, taking into account the influence of the second characteristic. A series of images is produced by dividing a range of values of the second characteristic into subdomains, associating an image with each subdomain, and associating the corresponding intensity value with the image points of each image, in case the value of the second characteristic, associated with the image point, falls in the subdomain associated with the respective image. Otherwise, a pre-determined intensity value is associated therewith. The series of images is converted into a series of intermediate images in the emulation step. A constant value of the second characteristic is used in the emulation for each intermediate image, said value originating from the respective subdomain and differing from the values of the second characteristic for the other intermediate images. The intermediate images are then combined to form an emulation image. | 12-04-2008 |
20080231862 | Device and Method for the Interferometric Measurement of Phase Masks - A device and method for the interferometric measurement of phase masks, particularly from lithography. Radiation passing through a coherence mask is brought to interference by a diffraction grating. A phase mask is arranged in or near the pupil plane of the first imaging optics which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask or of the diffraction grating. The interferograms are imaged onto the spatially resolving detector by second imaging optic and the phase and transmission functions of the phase mask are determined by an evaluation unit. The invention can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope. | 09-25-2008 |
20080212060 | Method for Determining Intensity Distribution in the Image Plane of a Projection Exposure Arrangement - A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution. | 09-04-2008 |
20080210887 | Charged Particle System - A charged particle system comprises a particle source for generating a beam of charged particles and a particle-optical projection system. The particle-optical projection system comprises a focusing first magnetic lens ( | 09-04-2008 |