ASM JAPAN K.K. Patent applications |
Patent application number | Title | Published |
20130084714 | Method for Forming Single-Phase Multi-Element Film by PEALD - A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor on the substrate in the absence of reactant and plasma; decomposing the precursor adsorbed on the substrate by an inert gas plasma; and reacting the decomposed precursor with a reactant gas plasma in the presence of the inert gas plasma. The multi-element film contains silicon and at least two non-metal elements constituting a matrix of the film, the precursor contains silicon and optionally at least one non-metal element to be incorporated in the matrix, and the reactant gas contains at least one non-metal element to be incorporated in the matrix. | 04-04-2013 |
20130068970 | UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations - A UV irradiation apparatus for treating substrates includes: at least two process stations each provided with a UV transmissive window; at least one electric UV lamp using two electrodes in a gas tube extending over the UV transmissive windows of the process stations aligned along the gas tube and shared by the process stations; a UV transmissive zone disposed between the UV lamp and the process stations and provided with reflectors; and shutters for blocking UV light from being transmitted to the respective process stations independently. | 03-21-2013 |
20130029498 | METHOD FOR REDUCING DIELECTRIC CONSTANT OF FILM USING DIRECT PLASMA OF HYDROGEN - A method for reducing a dielectric constant of a film includes (i) forming a dielectric film on a substrate; (ii) treating a surface of the film without film formation, and (III) curing the film. Step (i) includes providing a dielectric film containing a porous matrix and a porogen on a substrate, step (ii) includes, prior to or subsequent to step (iii), treating the dielectric film with charged species of hydrogen generated by capacitively-coupled plasma without film deposition to reduce a dielectric constant of the dielectric film, and step (iii) includes UV-curing the dielectric film to remove at least partially the porogen from the film. | 01-31-2013 |
20130014896 | Wafer-Supporting Device and Method for Producing SameAANM Shoji; FumitakaAACI Kawasaki-shiAACO JPAAGP Shoji; Fumitaka Kawasaki-shi JPAANM Fukuda; HideakiAACI TokyoAACO JPAAGP Fukuda; Hideaki Tokyo JP - A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer: | 01-17-2013 |
20130014697 | Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing ChambersAANM Kanayama; HirokiAACI Nagaoka-shiAACO JPAAGP Kanayama; Hiroki Nagaoka-shi JP - A container for containing a liquid material for processing a wafer includes: a container body; a divider dividing the interior of the container body and defining compartments fluid-tightly sealed off from each other except for bottom portions of the compartments; gas inlet ports for introducing gas to the respective compartments and gas outlet ports for discharging gas from the respective compartments; and a liquid level sensor provided in one of the compartments for keeping a liquid surface of a liquid material above the bottom portions when the container is in use conditions. | 01-17-2013 |
20120328780 | Dual Section Module Having Shared and Unshared Mass Flow Controllers - A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section. | 12-27-2012 |
20120325148 | Method for Positioning Wafers in Multiple Wafer Transport - A method for positioning wafers in dual wafer transport, includes: simultaneously moving first and second wafers placed on first and second end-effectors to positions over lift pins protruding from first and second susceptors, respectively; and correcting the positions of the first and second wafers without moving any of the lift pins relative to the respective susceptors or without moving the lift pins relative to each other, wherein when the first and second wafers are moved to the respective positions, the distance between the first wafer and tips of the lift pins of the first susceptor is substantially smaller than the distance between the second wafer and tips of the lift pins of the second susceptor. | 12-27-2012 |
20120305196 | High-Throughput Semiconductor-Processing Apparatus Equipped with Multiple Dual-Chamber Modules - A wafer-processing apparatus includes: eight or ten reactors with identical capacity for processing wafers on the same plane, constituting four or five discrete units, each unit having two reactors arranged side by side with their fronts aligned in a line; a wafer-handling chamber including two wafer-handling robot arms each having at least two end-effectors; a load lock chamber; and a sequencer for performing, using the two wafer-handling robot arms, steps of unloading/loading processed/unprocessed wafers from/to any one of the units, and steps of unloading/loading processed/unprocessed wafers from/to all the other respective units in sequence while the wafers are in the one of the units. | 12-06-2012 |
20120295449 | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen - A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule. | 11-22-2012 |
20120276306 | Atomic Layer Deposition For Controlling Vertical Film Growth - A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer | 11-01-2012 |
20120264305 | Footing Reduction Using Etch-Selective Layer - A method of forming side spacers upwardly extending from a substrate, includes: providing a template constituted by a photoresist formed on and in contact with an etch-selective layer laminated on a substrate; anisotropically etching the template in a thickness direction with an oxygen-containing plasma to remove a footing of the photoresist and an exposed portion of the underlying layer; depositing a spacer film on the template by atomic layer deposition (ALD); and forming side spacers using the spacer film by etching. The etch-selective layer has a substantially lower etch rate than that of the photoresist. | 10-18-2012 |
20120223220 | Calibration Method of UV Sensor for UV Curing - A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval. | 09-06-2012 |
20120220139 | METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD - A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration. | 08-30-2012 |
20120214318 | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen - A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule. | 08-23-2012 |
20120196048 | METHOD OF DEPOSITING FILM BY ATOMIC LAYER DEPOSITION WITH PULSE-TIME-MODULATED PLASMA - A thin film is formed by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using a reactant gas and a plasma, wherein the reactant gas is supplied substantially uniformly over the substrate, and the plasma is pulse-time-modulated and applied in the process of supplying the reactant gas. | 08-02-2012 |
20120164846 | Method of Forming Metal Oxide Hardmask - A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula Si | 06-28-2012 |
20120111831 | METHOD OF DEPOSITING FILM WITH TAILORED COMFORMALITY - A method of depositing a film with a target conformality on a patterned substrate, includes: depositing a first film on a convex pattern and a bottom surface; and depositing a second film on the first film, thereby forming an integrated film having a target conformality, wherein one of the first and second films is a conformal film which is non-flowable when being deposited and has a conformality of about 80% to about 100%, and the other of the first and second films is a flowable film which is flowable when being deposited. | 05-10-2012 |
20120100307 | Shower Plate Having Different Aperture Dimensions and/or Distributions - A shower plate is adapted to be attached to the showerhead and includes a front surface adapted to face the susceptor; and a rear surface opposite to the front surface. The shower plate has multiple apertures each extending from the rear surface to the front surface for passing gas therethrough in this direction, and the shower plate has at least one quadrant section defined by radii, wherein the one quadrant section has an opening ratio of a total volume of openings of all the apertures distributed in the section to a total volume of the one quadrant section, which opening ratio is substantially smaller than an opening ratio of another quadrant section of the shower plate. | 04-26-2012 |
20120058282 | Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern - A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate. | 03-08-2012 |
20120028469 | METHOD OF TAILORING CONFORMALITY OF Si-CONTAINING FILM - A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness. | 02-02-2012 |
20110217838 | METHOD FOR FORMING INTERCONNECT STRUCTURE HAVING AIRGAP - A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench. | 09-08-2011 |
20110159202 | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD - A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation. | 06-30-2011 |
20110086516 | METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD - A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration. | 04-14-2011 |
20110014795 | Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by Modified PEALD - A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate. | 01-20-2011 |
20100291713 | METHOD OF FORMING HIGHLY CONFORMAL AMORPHOUS CARBON LAYER - A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside which the semiconductor substrate is placed; depositing a conformal amorphous hydrogenated carbon layer on the irregular surface of the semiconductor substrate by plasma CVD; and controlling the deposition of the conformal ratio of the depositing conformal amorphous hydrogenated carbon layer. The controlling includes (a) adjusting a step coverage of the conformal amorphous hydrogenated carbon layer to about 30% or higher as a function of substrate temperature, and (b) adjusting a conformal ratio of the conformal amorphous hydrogenated carbon layer to about 0.9 to about 1.1 as a function of RF power and/or argon gas flow rate, | 11-18-2010 |
20100255218 | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature - A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines. | 10-07-2010 |
20100221925 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate. | 09-02-2010 |
20100189923 | METHOD OF FORMING HARDMASK BY PLASMA CVD - A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa. | 07-29-2010 |
20100184302 | Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 07-22-2010 |
20100178423 | METHOD FOR CONTROLLING FLOW AND CONCENTRATION OF LIQUID PRECURSOR - A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice. | 07-15-2010 |
20100158644 | SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH ROBOT DIAGNOSTIC MODULE - A semiconductor-processing apparatus includes: a wafer transfer chamber provided with a wafer transfer robot having an end effector therein, at least one reactor connected to the wafer transfer chamber, and a robot diagnostic module connected to the wafer transfer chamber for diagnosing the transfer robot. The robot diagnostic module includes at least one sensor for detecting a position of the end effector when the end effector is located inside the robot diagnostic module. | 06-24-2010 |
20100151151 | METHOD OF FORMING LOW-K FILM HAVING CHEMICAL RESISTANCE - A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate. | 06-17-2010 |
20100147396 | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus - A multiple-substrate processing apparatus includes: a reaction chamber comprised of two discrete reaction stations aligned one behind the other for simultaneously processing two substrates; a transfer chamber disposed underneath the reaction chamber, for loading and unloading substrates to and from the reaction stations simultaneously; and a load lock chamber disposed next to the transfer chamber. The transfer arm includes one or more end-effectors for simultaneously supporting two substrates one behind the other as viewed in the substrate-loading/unloading direction. | 06-17-2010 |
20100144162 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 06-10-2010 |
20100143609 | METHOD FOR FORMING LOW-CARBON CVD FILM FOR FILLING TRENCHES - A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film. | 06-10-2010 |
20100136313 | PROCESS FOR FORMING HIGH RESISTIVITY THIN METALLIC FILM - A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm. | 06-03-2010 |
20100124621 | Method of Forming Insulation Film by Modified PEALD - A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor. | 05-20-2010 |
20100124618 | Method of Forming Insulation Film Using Plasma Treatment Cycles - A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma. | 05-20-2010 |
20100104770 | TWO-STEP FORMATION OF HYDROCARBON-BASED POLYMER FILM - A method of forming a surface-treated hydrocarbon-based polymer film includes: supplying a hydrocarbon gas as a source gas, and an inert gas, and applying RF power to generate a plasma and form a hydrocarbon-based principal film on a substrate; and without extinguishing a plasma, changing flow of the hydrocarbon gas and the inert gas by continuously decreasing a flow ratio of the hydrocarbon gas to the inert gas with time to treat a surface of the principal film on the substrate. | 04-29-2010 |
20100101491 | WAFER LIFT PINS SUSPENDED AND SUPPORTED AT UNDERSIDE OF SUSCEPTOR - A wafer lift pin structure for lifting a semiconductor wafer includes: a through-hole penetrating through a susceptor; an upper guide fixedly fitted inside the through-hole, a lift pin constituted by an upper part, a middle part, and a lower part and inserted in the upper guide; and a lower guide attached to the underside surface of the susceptor, wherein the lift pin is suspended from the lower guide at the middle part of the lift pin at the lower position. The middle part has a diameter greater than that of the upper part and that of the lower part, and has a weight heavier than that of the upper part and that of the lower part. | 04-29-2010 |
20100093181 | PURGE STEP-CONTROLLED SEQUENCE OF PROCESSING SEMICONDUCTOR WAFERS - A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas. | 04-15-2010 |
20100092696 | METHOD FOR FORMING METAL FILM BY ALD USING BETA-DIKETONE METAL COMPLEX - A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate. | 04-15-2010 |
20100085129 | IMPEDANCE MATCHING APPARATUS FOR PLASMA-ENHANCED REACTION REACTOR - An impedance matching apparatus adapted to be connected between a reaction chamber and a power source for plasma processing includes a transformer, a coil unit, and a capacitor connected in series. A primary side of the transformer is adapted to be connected to the power source, and a secondary side of the transformer has multiple taps positioned at different windings; and the coil unit is comprised of multiple coils having different inductances and arranged in parallel, wherein each tap is connected to a different coil or coils. The impedance matching circuit further includes a switch unit provided between the coil unit and the capacitor. | 04-08-2010 |
20100055433 | ATOMIC COMPOSITION CONTROLLED RUTHENIUM ALLOY FILM FORMED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION - A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as Ru | 03-04-2010 |
20100049353 | SEMICONDUCTOR MANUFACTURING APPARATUS EQUIPPED WITH WAFER INSPECTION DEVICE AND INSPECTION TECHNIQUES - A semiconductor manufacturing apparatus includes a processing unit for processing at least one wafer; a loading/unloading unit for loading/unloading at least wafer; an input/output chamber for taking in a processed wafer from the processing unit and taking out the processed wafer to the loading/unloading unit, and taking in a unprocessed wafer from the loading/unloading unit and taking out the unprocessed wafer to the reaction unit; and a wafer inspection device for inspecting the processed wafer through a light transmittable top portion of the input/output chamber, through which light is transmittable, while the processed wafer is temporarily placed in the input/output chamber. | 02-25-2010 |
20100036517 | SEMICONDUCTOR MANUFACTURING APPARATUS - A semiconductor manufacturing apparatus includes a first program on a controller and a second program on an interface board between the controller and controlled devices. Both of the programs update their own counters and exchange their counter values with each other, serving as bi-directional software watchdog timers (WDT). If a counter value of the first program on the controller sent to the second program on the interface board is determined to be abnormal by the second program, the second program on the interface board sends commands to the controlled devices to terminate output so that the apparatus is navigated to a safe mode. The first program similarly monitors the counter values of the second program for anomalies. This bi-directional software WDT can be implemented as add-on to software programs that already exist in the controller and the interface board, therefore, this implementation does not incur extra cost of hardware of the apparatus. | 02-11-2010 |
20100014945 | SEMICONDUCTOR PROCESSING APPARATUS HAVING ALL-ROUND TYPE WAFER HANDLING CHAMBER - A semiconductor manufacturing apparatus includes a wafer handling chamber; at least one wafer input/output chamber attached to the wafer handling chamber; and multiple wafer processing chambers attached to the wafer handling chamber. The wafer handling chamber has a polygonal shape on a processing chamber level on which the wafer processing chambers are installed, and one wafer processing chamber is installed on each and every side of the polygon. | 01-21-2010 |
20100006025 | EXHAUST GAS TRAP FOR SEMICONDUCTOR PROCESSES - An exhaust gas trap for semiconductor processes includes: a trap body having an inlet port and an outlet port; an inlet shut-off valve provided at the inlet port; and an outlet shut-off valve provided at the outlet port. The trap body, inlet and outlet valves are integrated and can be removed together for replacement on refreshing of the trap. | 01-14-2010 |
20100003833 | METHOD OF FORMING FLUORINE-CONTAINING DIELECTRIC FILM - A method of forming a fluorine-containing dielectric film on a substrate by plasma CVD, includes: introducing as a process gas a fluorinated carbon compound having at least two double bonds in its molecule and an unsaturated hydrocarbon compound into a reaction space wherein a substrate is placed; and applying RF power to the reaction space to deposit a fluorine-containing dielectric film on the substrate by plasma CVD. | 01-07-2010 |
20100000470 | WAFER-POSITIONING MECHANISM - A wafer-positioning mechanism includes a susceptor having an upper surface for supporting a wafer thereon, which is slanted with respect to a horizontal plane at an angle such that the wafer on the upper surface slides with an aid and does not slide without the aid. The aid is a gas flowing out of the upper surface against the reverse side of the wafer facing the upper surface. The upper surface has a protrusion for stopping the wafer from sliding beyond the protrusion in the sliding direction by contacting an edge of the wafer where the wafer is positioned on the upper surface for wafer processing. | 01-07-2010 |
20090299701 | METHOD FOR DESIGNING SHOWER PLATE FOR PLASMA CVD APPARATUS - A method of designing a shower plate for a plasma CVD apparatus includes (a) providing a shower plate having a convex surface configured by a convex equation; (b) forming a film on a wafer using the shower plate in the plasma CVD apparatus; (c) determining a distribution of thickness of the film formed on the wafer by dividing a diametrical cross section of the film into multiple regions; (d) determining at least one secondary equation; and (e) designing a surface configuration of the shower plate by overlaying the secondary equation on the convex equation. | 12-03-2009 |
20090298257 | DEVICE ISOLATION TECHNOLOGY ON SEMICONDUCTOR SUBSTRATE - A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing. | 12-03-2009 |
20090297731 | APPARATUS AND METHOD FOR IMPROVING PRODUCTION THROUGHPUT IN CVD CHAMBER - A plasma CVD apparatus for forming a film on a substrate includes: an evacuatable reaction chamber; capacitively-coupled upper and lower electrodes disposed inside the reaction chamber; and an insulator for inhibiting penetration of a magnetic field of radio frequency generated during substrate processing. The insulator is placed on the bottom surface of the reaction chamber under the lower electrode. | 12-03-2009 |
20090274851 | METHOD OF FORMING A HIGH TRANSPARENT CARBON FILM - A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (C | 11-05-2009 |
20090252580 | WAFER PROCESSING APPARATUS WITH WAFER ALIGNMENT DEVICE - A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction. | 10-08-2009 |
20090246399 | METHOD FOR ACTIVATING REACTIVE OXYGEN SPECIES FOR CLEANING CARBON-BASED FILM DEPOSITION - A method of continuously forming carbon-based films on substrates includes: (i) forming a carbon-based film on a substrate in a reactor a pre-selected number of times; (ii) exciting an inert gas, an oxygen gas, and a nitrogen tri-fluoride gas to generate a plasma for cleaning; (iii) cleaning an inside of the reactor with the plasma after step (i) to remove particles accumulated during step (i) on the inside of the reactor. | 10-01-2009 |
20090239385 | SUBSTRATE-SUPPORTING DEVICE HAVING CONTINUOUS CONCAVITY - A substrate-supporting device has a top surface for placing a substrate thereon composed of a plurality of surfaces separated from each other and defined by a continuous concavity being in gas communication with at least one through-hole passing through the substrate-supporting device in its thickness direction. The continuous concavity is adapted to allow gas to flow in the continuous concavity and through the through-hole under a substrate placed on the top surface. | 09-24-2009 |
20090209101 | RUTHENIUM ALLOY FILM FOR COPPER INTERCONNECTS - A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer. | 08-20-2009 |
20090200251 | CLAMPING MECHANISM FOR SEMICONDUCTOR DEVICE - A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate. | 08-13-2009 |
20090162170 | TANDEM TYPE SEMICONDUCTOR-PROCESSING APPARATUS - A tandem type semiconductor-processing apparatus includes: a processing section including multiple units arranged in tandem, each of which unit includes a reaction chamber and a load lock chamber with an load lock interface; a FOUP section including at least one FOUP having a wafer cassette and a front opening interface; and a mini-environment section having a single interior connected to the processing section via each load lock interface on one side of the mini-environment section and connected to the FOUP section via each front opening interface on another side of the mini-environment section opposite to the one side. | 06-25-2009 |
20090156017 | METHOD FOR FORMING DIELECTRIC FILM USING SILOXANE-SILAZANE MIXTURE - A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film. | 06-18-2009 |
20090155997 | METHOD FOR FORMING Ta-Ru LINER LAYER FOR Cu WIRING - A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate. | 06-18-2009 |
20090155488 | SHOWER PLATE ELECTRODE FOR PLASMA CVD REACTOR - Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate. | 06-18-2009 |
20090148964 | METHOD FOR FORMING DIELECTRIC SiOCH FILM HAVING CHEMICAL STABILITY - A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher. | 06-11-2009 |
20090142935 | METHOD FOR FORMING SILAZANE-BASED DIELECTRIC FILM - A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film. | 06-04-2009 |
20090136683 | METHOD OF PLASMA TREATMENT USING AMPLITUDE-MODULATED RF POWER - A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate. | 05-28-2009 |
20090112370 | VACUUM SYSTEM AND METHOD FOR OPERATING THE SAME - The present invention provides a vacuum system including a vacuum pump capable of operating at a rotation rate controlled appropriately when a predetermined process is performed in a vacuum chamber, which contributes to energy conservation. The vacuum system serves as a semiconductor manufacturing system comprising a vacuum pump controller which has a gas flow mode and an auto-tuning mode for determining a rotation rate of a vacuum pump unit to set the rotation rate to a target value lower by a predetermined value than the full operation rate of gas flow rate control means under the condition that pressure within the process chamber is vacuum pressure necessary for the gas flow mode. The vacuum pump controller has means for reducing the rotation rate of the vacuum pump unit from a rated rotation rate in the auto-tuning mode under the condition that pressure within the process chamber is vacuum necessary for the gas flow mode, to determine whether or not the operation rate of an APC valve reaches a target value, and means for storing, as the rotation rate necessary for the gas flow mode, the rotation rate of the vacuum pump unit, which is obtained when it is determined that the operation rate of the APC valve reaches the target value. | 04-30-2009 |
20090098741 | METHOD FOR FORMING ULTRA-THIN BORON-CONTAINING NITRIDE FILMS AND RELATED APPARATUS - Boron-containing nitride films, including silicon boron nitride and boron nitride films, are deposited during, e.g., integrated circuit fabrication. The films are deposited in a process chamber having a reaction space that is defined as an open volume of the chamber directly above the substrate. The boron-containing nitride films are formed by flowing silicon and boron precursors into the process chamber while maintaining the volume, as measured under standard conditions, of silicon and boron precursors, e.g., SiH | 04-16-2009 |
20090093906 | POSITION SENSOR SYSTEM FOR SUBSTRATE TRANSFER ROBOT - A substrate processing apparatus comprises a substrate handling chamber, a pair of position sensors, and a substrate transfer robot. Each of the sensors comprises an emitter configured to emit a beam of light, and a receiver configured to receive the light beam. The substrate transfer robot comprises an end effector and a robot actuator. The end effector is configured to hold a substrate such that the substrate has a same expected position with respect to the end effector every time the substrate is held. The robot actuator is configured to move the end effector within the handling chamber to transfer substrates among a plurality of substrate stations. An edge of a substrate held in the expected position by the end effector can partially block a light beam of one of the position sensors, while another end of the end effector partially blocks a light beam of the other position sensor. | 04-09-2009 |
20090093135 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CURING MATERIAL WITH UV LIGHT - Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has an O | 04-09-2009 |
20090093134 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CURING MATERIALS WITH UV LIGHT - Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has a CO | 04-09-2009 |
20090090382 | METHOD OF SELF-CLEANING OF CARBON-BASED FILM - A method of self-cleaning a plasma reactor upon depositing a carbon-based film on a substrate a pre-selected number of times, includes: (i) exciting oxygen gas and/or nitrogen oxide gas to generate a plasma; and (ii) exposing to the plasma a carbon-based film accumulated on an upper electrode provided in the reactor and a carbon-based film accumulated on an inner wall of the reactor. | 04-09-2009 |
20090087339 | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR - A method for depositing a thin ruthenium (Ru) film on a substrate in a reaction chamber, comprising: step (i) of supplying at least one type of gas of a ruthenium precursor being a β-diketone-coordinated ruthenium complex and causing the gas to be adsorbed to the substrate in the reaction chamber; step (ii) of supplying a reducing gas into the reaction chamber and exciting the reducing gas, or supplying an excited reducing gas into the reaction chamber, in order to activate the ruthenium precursor adsorbed to the substrate; and step (iii) of repeating steps (i) and (ii) to form a thin ruthenium film on the substrate. | 04-02-2009 |
20090068852 | METHOD OF FORMING A CARBON POLYMER FILM USING PLASMA CVD - A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C | 03-12-2009 |
20090061074 | TECHNOLOGY OF DETECTING ABNORMAL OPERATION OF PLASMA PROCESS - A method of detecting abnormal operation of a plasma process, includes: (i) detecting a potential Vpp1 between an upper electrode and a lower electrode disposed parallel to each other in a reaction camber at a time T | 03-05-2009 |
20090056627 | METHOD AND APPARATUS FOR MONITORING PLASMA-INDUCED DAMAGE USING DC FLOATING POTENTIAL OF SUBSTRATE - A method for monitoring plasma-induced damage to a substrate while being processed in a plasma CVD apparatus includes: measuring DC floating potential of the substrate using a detection electrode in contact with the substrate while the substrate is processed in the apparatus; and detecting abnormality as plasma-induced damage based on the measured DC floating potential. | 03-05-2009 |
20090055013 | METHOD FOR CONTROLLING SEMICONDUCTOR-PROCESSING APPARATUS - A method controls an apparatus such as a semiconductor-processing apparatus including a controller and at least one device controlled by the controller, wherein the controller is provided with an interface for communicating with the device, and the interface has an internal clock for measuring time intervals for the communication. The method includes: replacing a system clock of the controller's operating system, which is used for transmitting instructions to the interface, with the internal clock of the interface; transmitting instructions to the interface from the controller using the time intervals measured by the internal clock substituting the system clock; and transmitting the instructions to the device from the interface using the time intervals measured by the internal clock in the interface, thereby controlling the device. | 02-26-2009 |
20090023229 | METHOD FOR MANAGING UV IRRADIATION FOR CURING SEMICONDUCTOR SUBSTRATE - A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances. | 01-22-2009 |
20080318417 | METHOD OF FORMING RUTHENIUM FILM FOR METAL WIRING STRUCTURE - A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate. | 12-25-2008 |
20080305648 | METHOD FOR FORMING INORGANIC SILAZANE-BASED DIELECTRIC FILM - A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds. | 12-11-2008 |
20080305258 | METHOD FOR FORMING DIELECTRIC FILM USING POROGEN GAS - A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film. | 12-11-2008 |
20080299747 | METHOD FOR FORMING AMORPHOUSE SILICON FILM BY PLASMA CVD - A method includes introducing a silicon-containing source gas and a dilution gas to a reactor to deposit an amorphous silicon film on a substrate by plasma CVD; and adjusting a compressive film stress to 300 MPa or less and a uniformity of film thickness within the substrate surface to ±5% or less of the amorphous silicon film depositing on the substrate as a function of a flow rate of the source gas, a flow rate of the dilution gas, and a pressure of the reactor which are used as control parameters. | 12-04-2008 |
20080299326 | PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR - A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough. | 12-04-2008 |
20080230721 | UV LIGHT IRRADIATING APPARATUS WITH LIQUID FILTER - A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel. | 09-25-2008 |
20080220619 | METHOD FOR INCREASING MECHANICAL STRENGTH OF DIELECTRIC FILM BY USING SEQUENTIAL COMBINATION OF TWO TYPES OF UV IRRADIATION - A method for increasing mechanical strength of a dielectric film includes: providing an initial dielectric film containing porogen; irradiating the initial dielectric film with first UV light having a first wavelength which is substantially or nearly similar to a maximum light absorption wavelength of the porogen for removing the porogen; and then irradiating the porogen-removed dielectric film with second UV light having a second wavelength which is shorter than the first wavelength, thereby increasing mechanical strength of the dielectric film. | 09-11-2008 |
20080210165 | CLUSTER TYPE SEMICONDUCTOR PROCESSING APPARATUS - A cluster type semiconductor processing apparatus includes a wafer handling chamber having a polygonal base including multiple sides for wafer processing chambers and two adjacent sides for wafer loading/unloading chambers as viewed in a direction of an axis of the wafer handling chamber. An angle A between two adjacent sides of the multiple sides for wafer processing chambers is greater than an angle B which is calculated by dividing 360° by the number of the total sides consisting of the multiple sides for wafer processing chambers and the two adjacent sides for wafer loading/unloading chambers. | 09-04-2008 |