SILTRON, INC. Patent applications |
Patent application number | Title | Published |
20120233930 | GRINDING WHEEL TRUING TOOL AND MANUFACTURING METHOD THEREOF, AND TRUING APPARATUS, METHOD FOR MANUFACTURING GRINDING WHEEL AND WAFER EDGE GRINDING APPARATUS USING THE SAME - The present invention relates to a grinding wheel truing tool, its manufacturing method, and a truing apparatus, a method for manufacturing a grinding wheel and a wafer edge grinding apparatus using the same. The grinding wheel truing tool of the present invention compensates a groove of a fine-grinding wheel for fine-grinding a wafer edge, and includes a truer having an edge of the same angle as a slanted surface of the groove of the fine-grinding wheel and a cross-sectional shape corresponding to a cross-sectional shape of the groove. The present invention uses the truing tool to easily process the groove of the grinding wheel for fine-grinding the wafer edge. | 09-20-2012 |
20120141808 | 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR - The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip. | 06-07-2012 |
20120132131 | 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR - The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip. | 05-31-2012 |
20110309051 | APPARATUS AND METHOD FOR WET TREATMENT OF AN OBJECT AND FLUID DIFFUSION PLATE AND BARREL USED THEREIN - An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity. | 12-22-2011 |
20110143525 | NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion. | 06-16-2011 |
20110092055 | COMPOUND SEMICONDUCTOR SUBSTRATE GROWN ON METAL LAYER, METHOD OF MANUFACTURING THE SAME, AND COMPOUND SEMICONDUCTOR DEVICE USING THE SAME - The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency. | 04-21-2011 |
20110045748 | DOUBLE SIDE POLISHING APPARATUS AND CARRIER THEREFOR - A double side polishing apparatus comprises an upper polishing plate and a lower polishing plate for polishing both sides of a wafer; a plurality of carriers, each including a center plate and a circumferential plate, the center plate having a mounting hole where the wafer is mounted, the circumferential plate having a fitting hole where the center plate is fitted and a gear part formed along the outer periphery thereof, the center of the mounting hole being eccentric from the center of the center plate, the center of the fitting hole being eccentric from the center of the circumferential plate; and a sun gear and an internal gear engaged with the gear part to transmit a rotational force to the plurality of carriers, wherein a fitting direction of a center plate into a fitting hole is adjustable for at least two carriers among the plurality of carriers. | 02-24-2011 |
20100330784 | METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE - Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process. | 12-30-2010 |
20100158781 | METHOD AND APPARATUS FOR GROWING HIGH QUALITY SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL INGOT GROWN THEREBY AND WAFER PRODUCED FROM THE SAME SINGLE CRYSTAL INGOT - The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value. | 06-24-2010 |
20100038755 | SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD - A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility. | 02-18-2010 |
20090272948 | High Quality Single Crystal and Method of Growing the Same - Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof. | 11-05-2009 |
20090183670 | APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME - The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface. | 07-23-2009 |
20090169460 | 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR - The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip. | 07-02-2009 |
20090156104 | GRINDING WHEEL TRUING TOOL AND MANUFACTURING METHOD THEREOF, AND TRUING APPARATUS, METHOD FOR MANUFACTURING GRINDING WHEEL AND WAFER EDGE GRINDING APPARATUS USING THE SAME - The present invention relates to a grinding wheel truing tool, its manufacturing method, and a truing apparatus, a method for manufacturing a grinding wheel and a wafer edge grinding apparatus using the same. The grinding wheel truing tool of the present invention compensates a groove of a fine-grinding wheel for fine-grinding a wafer edge, and includes a truer having an edge of the same angle as a slanted surface of the groove of the fine-grinding wheel and a cross-sectional shape corresponding to a cross-sectional shape of the groove. The present invention uses the truing tool to easily process the groove of the grinding wheel for fine-grinding the wafer edge. | 06-18-2009 |
20090155986 | METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT - The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween. | 06-18-2009 |
20090149118 | Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method - A silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method are provided. | 06-11-2009 |
20090148982 | Method of Manufacturing Compound Semiconductor Devices - A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method. | 06-11-2009 |
20090142991 | Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method - A silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method are provided. | 06-04-2009 |
20090114147 | SEMICONDUCTOR SINGLE CRYSTAL GROWTH METHOD HAVING IMPROVEMENT IN OXYGEN CONCENTRATION CHARACTERISTICS - The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm. | 05-07-2009 |
20090095321 | METHOD FOR CLEANING SILICON WAFER - A method for cleaning a silicon wafer includes (S | 04-16-2009 |
20090090294 | METHOD AND APPARATUS FOR MANUFACTURING AN ULTRA LOW DEFECT SEMICONDUCTOR SINGLE CRYSTALLINE INGOT - The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process. | 04-09-2009 |
20090084416 | BOX CLEANER FOR CLEANING WAFER SHIPPING BOX - The present invention relates to a box cleaner including an ultrasonic cleaning bath having a receiving space to be filled with DIW and an ultrasonic wave generator arranged at a bottom thereof; a tray for loading a wafer shipping box thereon; a lift for providing a driving force to put the tray into the ultrasonic cleaning bath and take the tray out of the ultrasonic cleaning bath; and a drying system for drying the cleaned shipping box, wherein a gas sprayer is installed in the ultrasonic cleaning bath for spraying gas into the cleaned shipping box to push the DIW out of the shipping box, thereby draining the DIW. | 04-02-2009 |
20090053875 | MANUFACTURING METHOD FOR SSOI SUBSTRATE - Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus. | 02-26-2009 |
20080206992 | Method for manufacturing high flatness silicon wafer - The present invention relates to a method for manufacturing a high flatness silicon wafer comprising (S | 08-28-2008 |
20080202551 | Method for cleaning solar cell substrates - The present invention relates to a method for cleaning solar cell substrates comprising (S | 08-28-2008 |