ULVAC, INC. Patent applications |
Patent application number | Title | Published |
20160109971 | TOUCH PANEL, METHOD OF PRODUCING THE SAME, OPTICAL THIN FILM SUBSTRATE AND METHOD OF PRODUCING THE SAME - A touch panel of the present invention includes: a cover substrate; a connector being provided on an area of the cover substrate other than a display area, and including a color layer and a shield layer, the shield layer being formed from a multilayer structure, the multilayer structure being configured so that a metal layer and a dielectric layer which is thicker than the metal layer are alternately laminated; and a touch panel substrate being arranged to face the cover substrate with the connector interposed therebetween. | 04-21-2016 |
20150338528 | Method of Manufacturing Radiological Image Conversion Panel and Radiological Image Conversion Panel - A radiological image conversion panel, having a phosphor layer containing therein a fluorescent substance which emits light through radiation exposure, is manufactured by forming the fluorescent substance into respective columnar structures on one of surfaces of a substrate to thereby obtain a phosphor layer made up of a group of columnar structures. The panel is subsequently manufactured by forming reflection films by respectively covering an outer surface of each of the columnar structures with a reflection film while leaving a gap between respective adjoining columnar structures, the reflection film being arranged to reflect light of a predetermined wavelength. In case a refractive index of the gap is lower than a refractive index of the columnar structures, the reflection films are formed of an inorganic material having a higher refractive index than the refractive index of the columnar structures. | 11-26-2015 |
20150230343 | MOUNTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A mounting device in which a conductive film that is not separated is formed on a resin substrate. Alloy thin films, which contain more than 50% by atom of Cu, 5% by atom or more and 30% by atom or less of Ni, and 3% by atom or more and 10% by atom or less of Al, are formed on a base consisting of a resin so as to be brought into contact with a surface of the base by sputtering. Conductive films consisting of copper are formed on surfaces of the alloy thin films so as to obtain a wiring film having a two-layer structure and a metal plug filled in a connection hole. The alloy thin films have high adhesion to a resin; and hence, the wiring film and the metal plug are not separated. | 08-13-2015 |
20150228496 | METHOD OF, AND APPARATUS FOR, FORMING HARD MASK - A method of forming a hard mask includes depositing step for depositing a titanium nitride film on a surface of a to-be-processed object; adsorbing step for adsorbing oxygen-containing molecules onto a surface of the titanium nitride film; and heating step for heating the titanium nitride film to a predetermined temperature. | 08-13-2015 |
20150200082 | METHOD OF MANUFACTURING METAL HYDROXIDES AND METHOD OF MANUFACTURING ITO SPUTTERING TARGET - A method of manufacturing metal hydroxides with high mass, and a method of manufacturing an ITO target are provided. A gas diffusion electrode | 07-16-2015 |
20150179395 | ION BEAM IRRADIATION DEVICE - An ion beam irradiation device includes a vacuum chamber that accommodates a transport tray which holds a substrate, a transport unit that transports the transport tray in the vacuum chamber in a transport direction, an ion beam irradiation unit that irradiates, with ion beams, a predetermined irradiation position in the vacuum chamber, and a position detector that detects a position of the transport tray. The transport tray includes a plurality of indices that are arranged in the transport direction to indicate portions of the transport tray. The position detector images each of the indices at a predetermined imaging position during transportation of the transport tray and detects a position of the transport tray relative to the imaging position based on the imaged index. | 06-25-2015 |
20150114291 | FILM FORMATION DEVICE - The present invention is to provide a technology for forming an organic compound film having a uniform thickness on a film at a high film formation speed while transporting the film in a vacuum chamber. In a vacuum chamber, a film reeled out from a mother roll is transported in contact with a center roller and an organic compound film is formed on the film. A vapor emission device disposed in a film deposition chamber provided in the vacuum chamber and having a vapor emission unit which emits and blows a vapor of an organic compound monomer to a film on the center roller, and an energy ray-emitting device for irradiating an organic compound monomer layer formed on the center roller with an energy ray so as to cure the organic compound layer are provided. The vapor emission device and the film deposition chamber are respectively connected to fifth and third vacuum evacuation devices which are independently controllable; and the pressure in the vapor emission device is set to be larger than the pressure in the film deposition chamber. The difference between the pressure in the vapor emission device and the pressure in the film deposition chamber is set to be constant. | 04-30-2015 |
20150114290 | ORGANIC THIN FILM FORMATION DEVICE - The present invention forms an organic thin film at a high film formation rate by vapor of an organic compound generated by heating. A film formation chamber is disposed in the interior of a buffer chamber; a part of the side surface of a center roller is inserted in the film formation chamber from a film formation chamber opening; and a base material film is run in close contact with the side surface in the part. The vapor is carried by a carrier gas from a vapor generation device connected to the film formation chamber; the center roller is cooled by a cooling device; the base material film is cooled to temperatures lower than the condensation temperature of the vapor; and an organic raw material layer is formed on the surface of the base material film by the vapor discharged into the film formation chamber, which is cured by the irradiation with an energy ray in the curing chamber while rotating the center roller. The buffer chamber is evacuated to a low pressure so that the carrier gas and the vapor that flowed out of the film formation chamber opening do not flow into the curing chamber and the roll chamber. | 04-30-2015 |
20150107769 | HARD MASK AND METHOD OF MANUFACTURING THE SAME - A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L | 04-23-2015 |
20150056373 | DEPOSITION METHOD AND DEPOSITION APPARATUS - [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface. | 02-26-2015 |
20140332959 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu. | 11-13-2014 |
20140216332 | VACUUM TREATMENT DEVICE - Provided is a vacuum treatment device, when a lifting pin inserted to a through hole is moved up, a substrate on a placement table is placed on a lid member which is connected to an upper end of a lifting pin and is separated from a placement surface of the placement table. Additionally, when the lifting pin is moved down, the substrate comes into contact with the placement surface so as to be placed thereon. An annular seal member surrounding a periphery of an opening of the through hole is provided in a portion which faces the lid member in a bottom surface of a depression provided in the placement surface of the placement table. The lid member annularly comes into contact with the seal member when the lifting pin is moved down, and a space inside the through hole and a space outside the through hole are separate by the seal member, thereby preventing gas from flowing into the through hole. | 08-07-2014 |
20140167066 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap. | 06-19-2014 |
20140166966 | Resistance Change Element and Method for Producing the Same - To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element | 06-19-2014 |
20140158301 | VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD - A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode. | 06-12-2014 |
20140102879 | METHOD OF MANUFACTURING VARIABLE RESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING THE SAME - [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. | 04-17-2014 |
20140075997 | SILICON PURIFICATION METHOD AND SILICON PURIFICATION DEVICE - The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°. | 03-20-2014 |
20140057377 | METHOD FOR MANUFACTURING DEVICE - A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film. | 02-27-2014 |
20140048413 | FILM-FORMING APPARATUS - There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. | 02-20-2014 |
20140027083 | Evaporating Material and Method of Manufacturing the Same - There is provided an evaporating material of thin plate shape which can be manufactured at a reduced cost and at high productivity, the evaporating material being adapted for use in enhancing the coercive force of neodymium-iron-boron sintered magnet by heat treatment while evaporating Dy in vacuum or in reduced-pressure inert gas atmosphere. The evaporating material of this invention has a core member | 01-30-2014 |
20130343840 | TRANSPORT APPARATUS AND VACUUM SYSTEM - A transport apparatus that supports and moves a substrate by using a robot hand between a plurality of chambers includes a first detection unit that detects the substrate, in a first stop position of the robot hand, using a first detection position set on one surface of the substrate supported by the robot hand, and a second detection unit that detects the substrate, in a second stop position of the robot hand, using a second detection position set on the one surface of the substrate supported by the robot hand. | 12-26-2013 |
20130333619 | ORGANIC THIN FILM FORMING APPARATUS - An organic thin film forming apparatus that can easily remove an organic thin film adhered to a surface of a deposition preventive plate. The apparatus forms an organic thin film on a substrate disposed on a surface of a substrate stage from an organic gas. An electroless nickel film containing fluorine resin is formed on the surface of a deposition preventive plate. The electroless nickel film containing fluorine resin has mold release characteristics for an organic thin film. Even if the organic thin film adheres, the organic thin film can be easily removed by a method (such as, high pressure cleaning). | 12-19-2013 |
20130306599 | RADICAL ETCHING APPARATUS AND METHOD - A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and with a gas introduction device through which N | 11-21-2013 |
20130288398 | METHOD OF MANUFACTURING TUNNELING MAGNETORESISTIVE ELEMENT - [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO. | 10-31-2013 |
20130284701 | METHOD OF MANUFACTURING DIELECTRIC DEVICE AND ASHING METHOD - [Object] To provide a method of manufacturing a dielectric device and an ashing method that are capable of suppressing the occurrence of resist residue. | 10-31-2013 |
20130280062 | COUPLING STRUCTURE FOR VACUUM EXHAUST DEVICE AND VACUUM EXHAUST SYSTEM - Provided is a coupling structure for vacuum exhaust devices each including a pump chamber and a casing that demarcates the pump chamber. The coupling structure includes a first end surface formed on a first side of the casing, and a second end surface formed on the second side of the casing, the second side being the opposite side of the first side. The casing of a first vacuum exhaust device and the casing of a second vacuum exhaust device among a plurality of vacuum exhaust devices are arranged to be directly superposed on each other such that the first end surface provided to the first vacuum exhaust device and the second end surface provided to the second vacuum exhaust device come into contact with each other. By fastening the first end surface and the second end surface, the first vacuum exhaust device and the second vacuum exhaust device are connected to each other such that gas can flow between the casing of the first vacuum exhaust device and the casing of the second vacuum exhaust device. | 10-24-2013 |
20130257205 | ECCENTRIC CIRCLING DRIVE DEVICE - [Object] To provide an eccentric circling drive device that is capable of performing appropriate lubrication and cooling by means of a processing liquid while preventing energy loss and damage to members due to friction. | 10-03-2013 |
20130247620 | SILICON REFINING DEVICE AND SILICON REFINING METHOD - A technology for removing impurities from a silicon raw material at a low cost. A base material made of metallurgical silicon is arranged in a dissolution vessel, the base material arranged in the dissolution vessel is heated in a vacuum ambience and fully molten, silicon is solidified from a portion where an inner bottom surface of the dissolution vessel is in contact with molten silicon by cooling the outer bottom surface of the dissolution vessel in a state where the outer bottom surface faces the cooling means, spaced from the cooling means, the solidificated silicon is made to grow upward, and unsolidificated silicon located above the solidificated silicon is removed from the dissolution vessel. | 09-26-2013 |
20130239993 | FILM-FORMING APPARATUS AND METHOD FOR CLEANING FILM-FORMING APPARATUS - A film-forming apparatus includes a heat generator exposed to a film-forming gas drawn into a chamber to generate film formation species. A film-forming gas supply system supplies the film-forming gas into the chamber. A control unit sets the heat generator in a non-heated state during a cleaning process that discharges a film formation residue from the chamber. A cleaning gas supplying system supplies a cleaning gas including ClF3 into the chamber. A temperature adjustment unit adjusts the chamber to a target temperature from 100° C. or higher to 200° C. or less in the cleaning process. A discharge system discharges a reaction product produced by a reaction between the film formation residue and the cleaning gas from the chamber. | 09-19-2013 |
20130239430 | VACUUM FREEZE-DRYING APPARATUS AND FROZEN PARTICLE MANUFACTURING METHOD - A technology for protecting a valve seat inside a collection tank from the adherence of frozen particles in a vacuum freeze-drying apparatus and a frozen particle manufacturing method. The inside of a vacuum tank and a collection tank are vacuum evacuated; a raw material liquid is injected into the vacuum tank to produce frozen particles; and the frozen particles are piled up on a surface of a heating/cooling shelf. When the frozen particles on the heating/cooling shelf are transferred into the collection tank through the inside of an auxiliary pipe, the frozen particles do not adhere to a valve seat which surrounds an opening of a main pipe inside the collection tank. | 09-19-2013 |
20130230663 | PROTECTIVE FILM FORMING METHOD, AND SURFACE FLATTENING METHOD - A method for flattening a surface of a substrate in which a film formation surface has a recess and a convex and a method for forming a protective film by using a photo-curable organic thin film material are provided. A gas of an organic thin film material having photocurability is liquefied on the surface of a substrate having the recess and the convex and a liquid organic layer is grown on the surface of the substrate (first liquid layer growing step T | 09-05-2013 |
20130228453 | DIELECTRIC FILM FORMING APPARATUS AND METHOD FOR FORMING DIELECTRIC FILM - A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100)/(001) orientation. A dielectric film forming apparatus includes a deposition preventive plate heating portion that heats a deposition preventive plate disposed in a position where particles discharged from a target adhere. Sputtering gas is introduced from a sputtering gas introduction unit into a vacuum chamber. The deposition preventive plate is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate. After a seed layer is formed on a substrate, the substrate is heated to the film forming temperature, and AC voltage is applied to the target from a power supply and then, the target is sputtered so as to form a dielectric film on the substrate. | 09-05-2013 |
20130224381 | THIN-FILM FORMING METHOD AND THIN-FILM FORMING APPARATUS - In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S | 08-29-2013 |
20130220803 | TUNGSTEN TARGET AND METHOD FOR PRODUCING SAME - [Problem] To suppress the generation of particles by reducing the average particle diameter to several dozen μm or less. | 08-29-2013 |
20130220799 | METHOD FOR FORMING DIELECTRIC THIN FILM - A method for forming a dielectric thin film that forms a PZT thin film having a (100)/(001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001)/(100) orientation can be formed without lack of Pb. | 08-29-2013 |
20130216710 | THIN FILM FORMING METHOD AND THIN FILM FORMING APPARATUS - [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness. | 08-22-2013 |
20130211748 | METHOD FOR MEASURING VISCOELASTIC MODULUS OF SUBSTANCE, AND APPARATUS FOR MEASURING VISCOELASTIC MODULUS OF SUBSTANCE - [Problem] A method for measuring a viscoelastic modulus of a substance and an apparatus for measuring the viscoelastic modulus of the substance are provided for allowing information on viscoelasticity of an adsorption substance to be expressed by moduli G′ and G″ which are generally used when expressing viscoelasticity, and for further allowing calculation of the viscoelastic modulus in real time. | 08-15-2013 |
20130209880 | Positive Electrode for Lithium-Sulfur Secondary Battery and Method of Forming the Same - Provided are a positive electrode for a lithium-sulfur secondary battery and a method of forming the same, the positive electrode being capable of maintaining battery characteristics such as a specific capacity and a cycling characteristic while achieving a high rate characteristic in particular when being applied to a lithium-sulfur secondary battery. A positive electrode of a lithium-sulfur secondary battery includes a positive electrode current collector and carbon nanotubes grown on a surface of the positive electrode current collector and oriented in a direction orthogonal to the surface. At least the surface of each of the carbon nanotubes is covered with sulfur with a certain interstice left between neighboring ones of the carbon nanotubes. | 08-15-2013 |
20130202416 | DRIVE DEVICE - [Object] To provide a drive device capable of increasing the drive precision of a movable member for generating power and capable of suppressing the generation of abraded particles. | 08-08-2013 |
20130199572 | FILM-FORMING APPARATUS, AND METHOD FOR MAINTAINING FILM-FORMING APPARATUS - Ignition sections are provided at two locations on each of lower portions of the side surfaces on both sides of a film-forming chamber so as to be provided at four locations in total. A flowing current is applied to the ignition sections when a flammable by-product is ignited. A first detecting section for measuring a pressure in the film-forming chamber is formed on the side surface of the film-forming chamber. A second detecting section is formed at the lower portion of the side surface of the film-forming chamber. A third detecting section for measuring a spatial temperature in the film-forming chamber is formed at an upper portion of the film-forming chamber. | 08-08-2013 |
20130199275 | Leak Detector - Provided is a convenient leak detector which has high detection sensitivity and can quickly start a leak test after the start of vacuuming a test piece, without impairing the capabilities such as fast response to helium gas. The leak detector includes a mass spectrometer tube configured to detect a search gas and a turbo-molecule pump which has a plurality of stages rotors and stators alternately arranged in a housing, the rotors attached to a rotary shaft, and includes a drive source configured to rotationally drive the rotary shaft. An intake port communicating with a test piece TP and a connection port to which the mass spectrometer tube is connected are opened at positions away from each other in a wall surface of the housing, the wall surface facing a rotor of the uppermost stage. | 08-08-2013 |
20130186752 | TARGET DEVICE, SPUTTERING APPARATUS AND METHOD FOR MANUFACTURING A TARGET DEVICE - To provide a target device that can easily be reused in which the amount of gas discharge is small. The present invention is a target device including a backing plate and a target plate that is fixed to the backing plate with a metal brazing material, in which a protective film made of a TiN thin film in which a proportion of (111) plane is at a maximum is formed on an exposed portion of the backing plate. The discharge amount of gas is small, and the brazing material that adheres when fixing the target plate can be easily peeled off. | 07-25-2013 |
20130186340 | Vacuum Film Forming Apparatus - A stage holds the substrate inside the vacuum chamber, gas supply device alternately supplies gases to the substrate, and exhaust device exhausts gases inside the vacuum chamber. The gas supply device has at least one ejection nozzle, disposed on one side of the stage, for ejecting the gases from one side of the substrate to the other side thereof and also along an upper surface of the substrate. In this case, that surface side of the substrate held by the stage on which the thin film is formed is defined as the upper side. The exhaust device includes: an exhaust port disposed to open through a lower wall of the vacuum chamber on the other side of the stage; an exhaust chamber disposed under the vacuum chamber in communication with the exhaust port; and a vacuum pump connected to the exhaust chamber to evacuate the exhaust chamber. | 07-25-2013 |
20130178059 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF DEVICE - A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process α between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process α, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10 | 07-11-2013 |
20130174783 | FILM-FORMING APPARATUS - A film-forming apparatus capable of discharging a feedstock gas and a reactive gas to an inner side of the vacuum chamber by more effectively cooling the gases without mixing them in comparison with the conventional art. A discharge plate having a first face exposed inside the vacuum chamber is provided with a plurality of feedstock gas introduction holes and a plurality of reactive gas introduction holes penetrating the discharge plate. A plurality of grooves having the feedstock gas introduction holes located on the bottom face are formed in the second face opposite to the first face of the discharge plate, a top plate that covers the groove is arranged over the second face, and the feedstock gas through-hole formed in the top plate and the feedstock gas introduction hole are connected to each other with the first auxiliary pipe. | 07-11-2013 |
20130168243 | Vacuum Processing Apparatus - Provided is a low-cost vacuum processing apparatus which enables the miniaturization of the apparatus and achieves good productivity. An elongated sheet base material is transported through a vacuum processing chamber, and predetermined processing is performed on the sheet base material in this vacuum processing chamber. The vacuum processing chamber is provided with a single processing unit, and has an auxiliary vacuum chamber provided in continuation with the vacuum processing chamber. The auxiliary vacuum chamber is provided with a feed roller and a take-up roller. The vacuum processing apparatus includes a pair of first roller units provided on opposite sides across the processing unit in the vacuum processing chamber. Each of the first roller units has multiple rollers disposed at regular distances. The rollers are deviated from each other in the axial direction and arranged in such a staggered manner that the sheet base material is helically wound around the rollers. | 07-04-2013 |
20130145961 | WATER-REACTIVE AL-BASED COMPOSITE MATERIAL, WATER-REACTIVE AL-BASED THERMALLY SPRAYED FILM, PROCESS FOR PRODUCTION OF SUCH AL-BASED THERMALLY SPRAYED FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Herein provided are a water-reactive Al-based composite material which is characterized in that it is produced by incorporating, into Al, 2.0 to 3.5% by mass of In, 0.2 to 0.5% by mass of Si and 0.13 to 0.25% by mass of Ti, and which can be dissolved in water through the reaction thereof in a water-containing atmosphere; a water-reactive Al-based thermally sprayed film produced using this composite material; a method for the production of this Al-based thermally sprayed film; and a constituent member for a film-forming chamber which is provided with this Al-based thermally sprayed film on the surface thereof. | 06-13-2013 |
20130129462 | Substrate Conveyance Method and Substrate Conveyance System - [Object] To provide a wafer conveyance method and a wafer conveyance system that are able to quickly transfer a wafer without losing positional accuracy. | 05-23-2013 |
20130113034 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, PRODUCTION METHOD FOR SAME, AND CHARGE STORAGE FILM - A non-volatile semiconductor memory device comprises a tunnel insulating film on a semiconductor substrate, a charge storage film on the tunnel insulating film, a blocking insulating film on the charge storage film, a control gate electrode arranged on the blocking insulating film, and source/drain regions formed on the semiconductor substrate on the both sides of the control gate electrode, that the charge storage film is a silicon nitride film produced according to the catalytic chemical vapor deposition technique and that the ratio between the constituent elements: N/Si falls within the range of from 1.2 to 1.4. | 05-09-2013 |
20130098757 | SPUTTERING DEPOSITION APPARATUS AND ADHESION PREVENTING MEMBER - An adhesion-preventing member from which a thin film of an adhered material is not peeled off during a film deposition process and a sputter deposition apparatus having the adhesion-preventing member. Adhesion-preventing members | 04-25-2013 |
20130092533 | SPUTTER DEPOSITION APPARATUS - A sputter deposition apparatus can sputter a wider surface area of a sputtering surface of a target in comparison to an area that could be sputtered by a conventional apparatus. An adhesion-preventing member surrounding the outer periphery of a sputtering surface of a target made of a metal material is formed by insulating ceramic. The target is sputtered while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes out to the outside of the outer periphery of the sputtering surface. | 04-18-2013 |
20130092528 | FILM-FORMING DEVICE AND FILM-FORMING METHOD - A film-forming device is provided, including: a chamber in which a substrate is disposed; a target, disposed within the chamber, which contains a material from which a film is formed; a substrate-supporting table disposed inside the chamber; driving unit that rotates the substrate-supporting table; a sputtering cathode that causes sputtered particles to be incident on the substrate from an oblique direction; and a control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time required to form a film having a desired thickness is an integer multiple of a rotation period of the substrate-supporting table. | 04-18-2013 |
20130068614 | SPUTTER DEPOSITION APPARATUS - A sputter deposition apparatus can sputter the entire sputtering surface of a target, and thereby increase the usage efficiency of the target and prevent arcing. An adhesion-preventing member, which surrounds the outer periphery of a sputtering surface of an electrically-conductive target | 03-21-2013 |
20130048494 | SPUTTERING DEVICE - A sputtering device includes a vacuum chamber accommodating a substrate stage which rotates a substrate having a film formation surface. A target that has a sputtered surface formed from magnesium oxide is provided in a circumferential direction of the substrate. An angle of a normal to the film formation surface of the substrate and a normal to the sputtered surface of the target is defined as an angle of inclination θ for the target, and the target is disposed such that the angle of inclination θ satisfies −50+φ<θ<−35+φ. Here, φ is an angle represented by φ=arctan(W/H); H represents the height from the center of the substrate to the center of the target; and W represents the width from the center of the substrate to the center of the target. | 02-28-2013 |
20130023116 | METHOD FOR THE FORMATION OF CO FILM AND METHOD FOR THE FORMATION OF CU INTERCONNECTION FILM - A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H | 01-24-2013 |
20120305392 | MANUFACTURING METHOD FOR LiCoO2, SINTERED BODY AND SPUTTERING TARGET - Provided is a method for stably manufacturing high-density sintered LiCoO | 12-06-2012 |
20120305391 | MANUFACTURING METHOD FOR LiCoO2 SINTERED BODY AND SPUTTERING TARGET - Disclosed are a manufacturing method for a LiCoO | 12-06-2012 |
20120293026 | DRIVE DEVICE AND CONVEYANCE DEVICE - To provide a drive device rigid enough to endure a stress due to a reaction during driving of an arm unit, and to provide a conveyance device including the same. | 11-22-2012 |
20120288347 | CONVEYING DEVICE AND VACUUM APPARATUS - A conveying device includes an extensible link mechanism having a plurality of arms receiving power from a drive source, a mounting section for mounting a substrate, connected to an operation tip section of the link mechanism through third left and right arms. A downstream-side pressing mechanism making contact with and pressing a side portion of the substrate toward the link mechanism in accordance with the operation of the link mechanism is provided in an area of the mounting section on the downstream side in the direction of substrate conveyance. An upstream-side pressing mechanism making contact with and pressing the side portion of the substrate in the direction of substrate conveyance in accordance with the operation of the link mechanism is provided in an area of the mounting section on the upstream side in the direction of substrate conveyance. | 11-15-2012 |
20120264310 | METHOD FOR FORMING NI FILM - A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H | 10-18-2012 |
20120244701 | METHOD FOR FORMING NISI FILM, METHOD FOR FORMING SILICIDE FILM, METHOD FOR FORMING METAL FILM FOR USE IN SILICIDE-ANNEALING, APPARATUS FOR VACUUM PROCESSING AND FILM-FORMING APPARATUS - The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H | 09-27-2012 |
20120231166 | ORGANIC THIN FILM DEPOSITION DEVICE, ORGANIC EL ELEMENT MANUFACTURING DEVICE, AND ORGANIC THIN FILM DEPOSITION METHOD - An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time. | 09-13-2012 |
20120206685 | SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - Disclosed is an electrode film which does not exfoliate from, or diffuse into, an oxide semiconductor or an oxide thin film. An electrode layer comprises a highly adhesive barrier film being a Cu—Mg—Al thin film and a copper thin film; and an oxide semiconductor and an oxide thin film contact with the highly adhesive barrier film. With the highly adhesive barrier film having magnesium in a range of at least 0.5 at % but at most 5 at % and aluminum at least 5 at % but at most 15 at % when the total number of atoms of copper, magnesium, and aluminum is 100 at %, the highly adhesive barrier film has both adhesion and barrier properties. The electrode layer is suitable because a source electrode layer and a drain electrode layer contact the oxide semiconductor layer. A stopper layer having an oxide may be provided on a layer under the electrode layer. | 08-16-2012 |
20120196175 | PROCESS FOR PRODUCING THIN FILM LITHIUM SECONDARY BATTERY - A process for producing a chargeable-and-dischargeable thin film lithium secondary battery, which includes a substrate, a positive electrode film arranged on the substrate and formed in a structure of which lithium is insertable and releasable, an electrolyte film which is arranged on the positive electrode film and being in contact with the positive electrode film and contains lithium ions and in which lithium ions are movable, and a negative electrode film made of metallic lithium and arranged on the electrolyte film and being in contact with the electrolyte film, wherein after the negative electrode film is formed, a lithium carbonate film is formed on a surface of the negative electrode film by bringing a surface of the negative electrode film into contact with a surface-treating gas containing a rare gas and carbon dioxide. The process does not change the properties of a metallic lithium film as a negative electrode. | 08-02-2012 |
20120194757 | WIRING LAYER, SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom % , adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device. | 08-02-2012 |
20120193323 | METHOD FOR OPERATING SUBSTRATE PROCESSING APPARATUS - A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed. | 08-02-2012 |
20120190176 | CATALYTIC CVD EQUIPMENT, METHOD FOR FORMATION OF FILM, AND PROCESS FOR PRODUCTION OF SOLAR CELL - In a catalytic CVD equipment, the control unit controls a temperature of the catalytic wires to a standby temperature at predetermined time intervals before and after the film is formed. The standby time is a predetermined temperature which is lower than the temperature of the catalytic wires when the film is formed, and is higher than room temperature. | 07-26-2012 |
20120190149 | CATALYTIC CVD EQUIPMENT, METHOD FOR FORMATION OF FILM, PROCESS FOR PRODUCTION OF SOLAR CELL, AND SUBSTRATE HOLDER - In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate. | 07-26-2012 |
20120186746 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a magnetic field forming section, which has concentrically disposed magnetic field coils at least at three levels, and which forms, on the inner side of the magnetic field coil at the intermediate level, an annular zero magnetic field region along the circumferential direction of the magnetic field coils. A chamber main body including the top portion is interpolated on the inner side of the magnetic field coils and houses the substrate below the zero magnetic field region. A gas supply section supplies an etching gas to the inside of the chamber main body. A high frequency antenna forms an induction electric field in the zero magnetic field region and generates plasma of the etching gas. An electrode is disposed above the top portion of the chamber main body, and is electrostatically coupled with the plasma generated in the chamber main body. | 07-26-2012 |
20120181164 | SILICON PURIFICATION METHOD AND SILICON PURIFICATION DEVICE - The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°. | 07-19-2012 |
20120161055 | GATE VALVE - A gate valve includes: a valve box; a support body disposed inside a hollow portion; a valve plate including a fixed valving section, a movable valving section sliding in a direction in which a flow passage is extended, a first peripheral region; and a second peripheral region; a first biasing section disposed at the first peripheral region, allowing the movable valving section to move toward a first opening portion, allowing the movable valving section to come into contact with an inner surface, pressing the movable valving section onto the inner surface, and closing the flow passage; and a second biasing section disposed at the second peripheral region, allowing the movable valving section to move toward a second opening portion, and releasing the flow passage by separating the movable valving section from the inner surface. | 06-28-2012 |
20120152889 | METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT - A method for manufacturing a piezoelectric element, in which a ferroelectric film is processed in an appropriate shape by plasma etching, is provided. A metal mask made of a metal thin film which is hard to be etched by oxygen gas is placed on an object to be processed formed by laminating a lower electrode layer and a ferroelectric film on a substrate in this order. An etching gas containing a mixture gas of the oxygen gas and a reactive gas including fluorine in a chemical structure is turned into plasma and is brought into contact with the metal mask and the object to be processed. An AC voltage is applied to an electrode disposed beneath the object to be processed so that ions in the plasma are caused to enter the object to be processed to perform anisotropic etching on the ferroelectric film. | 06-21-2012 |
20120145184 | SELF-CLEANING CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS AND CLEANING METHOD THEREOF - A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply. | 06-14-2012 |
20120134867 | DRY PUMP - The present invention provides a dry pump including: a center cylinder which includes: a plurality of pump chambers containing an upper stage pump chamber that communicates with an intake port and a lower stage pump chamber that communicates with a discharge port; a plurality of rotors contained in the plurality of the pump chambers; a rotating shaft that is a rotation axis of the rotor; and a side face on which a communication hole is formed, the side face being intersected by the rotating shaft extending in the axial direction, and being provided adjacent to the lower stage pump chamber, and a side cover which covers the side face with the communication hole to form a space. | 05-31-2012 |
20120132523 | Method of Manufacturing a Sputtering Target and Sputtering Target - [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains. | 05-31-2012 |
20120129278 | DRY ETCHING METHOD - A dry etching method includes a first step and a second step. The first step includes generating a first plasma from a gas mixture, which includes an oxidation gas and a fluorine containing gas, and performing anisotropic etching with the first plasma on a silicon layer to form a recess in the silicon layer. The second step includes alternately repeating an organic film forming process whereby an organic film is deposited on the inner surface of the recess with a second plasma, and an etching process whereby the recess covered with the organic film is anisotropically etched with the first plasma. When an etching stopper layer is exposed from a part of the bottom surface of the recess formed in the first step, the first step is switched to the second step. | 05-24-2012 |
20120121818 | COATING SURFACE PROCESSING METHOD AND COATING SURFACE PROCESSING APPARATUS - A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating. | 05-17-2012 |
20120119269 | METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR - A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor. | 05-17-2012 |
20120118732 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber. | 05-17-2012 |
20120118725 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target. | 05-17-2012 |
20120116586 | TEACHING APPARATUS OF ROBOT AND TEACHING METHOD OF ROBOT - A teaching method of a robot which supports a transported matter with a hand and transports the transported matter between two or more reception spots, includes: a jig disposing process of disposing a positioning jig at the reception spot so as to have the same center axis as the transported matter when the transported matter is placed at the reception spot; and a teaching process of moving the hand to a position at which an abutting portion of the hand abuts the positioning jig at each of the reception spots and teaching the position of the hand to a controller. | 05-10-2012 |
20120114854 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time 0 to t | 05-10-2012 |
20120111722 | FILM-FORMING APPARATUS - There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. | 05-10-2012 |
20120103801 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section. | 05-03-2012 |
20120103793 | VACUUM FILM-FORMING APPARATUS AND POSITION DETECTION METHOD FOR SHUTTER PLATE OF VACUUM FILM-FORMING APPARATUS - At the time of detecting a position of a shutter plate, a laser light, for instance, is radiated from a detector (an optical sensor). The radiated laser light reaches the shutter plate through a window of a chamber. Then, the laser light is reflected by the surface of the shutter plate and re-enters the detector. The detector detects the time required from the emission of the laser light to the entry of the reflected light. | 05-03-2012 |
20120097534 | MAGNETRON SPUTTERING CATHODE AND FILM FORMATION APPARATUS - A magnetron sputtering cathode includes: a yoke; a magnetic circuit having a central magnet portion, a peripheral edge magnet portion, an auxiliary magnet portion, and a parallel area; and a backing plate. The central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are disposed so that polarities of tip portions of the central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are different from each other at portions between adjacent magnet portions. The magnetic field profile observed from above of the backing plate and the magnetic flux density in a horizontal direction are determined so that the magnetic flux density in a first area is a positive value and the magnetic flux density in a second area is a negative value with respect to a position corresponding to the central magnet portion as a boundary. | 04-26-2012 |
20120097527 | FILM FORMATION APPARATUS AND FILM FORMING METHOD - A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id04-26-2012 | |
20120094399 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: forming a photoelectric converter including a plurality of compartment elements, the compartment elements adjacent to each other being electrically connected; determining the compartment element having a structural defect in the photoelectric converter; narrowing down a region in which the structural defect exists in the compartment element based on a resistance distribution which is obtained by measuring resistances of a plurality of portions between the compartment elements adjacent to each other, image-capturing the inside of the narrowed region in which the structural defect exists by use of an image capturing section, accurately determining a position of the structural defect from the obtained image so that a portion in which the structural defect exists in the compartment element is restricted; and removing the structural defect by irradiating the portion in which the structural defect exists with a laser beam. | 04-19-2012 |
20120082778 | VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD - The present invention aims to provide a technology, which uses an apparatus having a simple configuration to efficiently form a film with uniform film thickness and film quality when continuously forming a film by vacuum deposition of highly reactive lithium. A vacuum deposition system of the present invention has a vacuum deposition chamber wherein an evaporation material is deposited on a substrate by deposition, a substrate supplying/replacing system, connected to the vacuum deposition chamber, for performing supplying and replacing the substrate to and from the vacuum deposition chamber, and a material supplying/replacing system, connected to the vacuum deposition chamber, for performing the supplying and the replacing of the evaporation material to and from the vacuum deposition chamber. | 04-05-2012 |
20120068265 | WIRING LAYER STRUCTURE AND PROCESS FOR MANUFACTURE THEREOF - This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer. | 03-22-2012 |
20120064716 | FILM FORMING APPARATUS AND A BARRIER FILM PRODUCING METHOD - A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed. | 03-15-2012 |
20120060533 | PRESSURE REDUCTION SYSTEM AND VACUUM TREATMENT DEVICE - A depressurization system includes a plurality of depressurization devices, each of which includes a cooling; and a compression device. The compression device includes a compression unit, which is provided with an AC electric motor, and supplies a compressed coolant to each cooling unit at a flow rate corresponding to a rotation speed of the AC electric motor. Each cooling unit supplements gas when adiabatically expanding the compressed coolant. The depressurization system also includes a temperature detection unit, which detects the temperature of each cooling unit, an inverter device, which is capable of changing a frequency of AC power supplies to the AC electric motor, and a frequency controller, which controls an output frequency of the inverter device. The frequency controller relatively raises the output frequency of the inverter device when the temperature of the cooling unit of at least one depressurization device of the depressurization devices is greater than or equal to a first threshold value, and relatively lowers the output frequency of the inverter device when the temperature of the cooling unit of all of the depressurization devices decreases to less than the first threshold value. | 03-15-2012 |
20120055788 | TARGET FOR SPUTTERING - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al | 03-08-2012 |
20120055787 | Sputtering Target and Method of Processing a Sputtering Target - [Object] To provide a sputtering target allowing component metals to be separated from each other by a simple process and a method of processing the sputtering target. | 03-08-2012 |
20120045190 | VACUUM HEATING DEVICE AND VACUUM HEAT TREATMENT METHOD - A uniform voltage is applied to loads even to other than a multiple of three loads made of heating lamps connected in parallel to each other, without causing any burden on a primary side. The number of loads is divided into a multiple of three and a multiple of two. A three-phase AC voltage is applied to three primary windings, which are connected as a Y-connection or a Δ-connection. Secondary windings, which are each magnetically coupled to a primary winding of a plurality of three-phase transformers and have the same number of turns, are connected with the multiple of three loads. The number of turns of the M-seat primary winding of a Scott transformer is divided into two at a midpoint, to which an end of the T-seat primary winding having a number of turns equal to (√3)/2 times that of the M-seat primary winding, is connected and to which the three-phase AC voltage is applied. The M-seat primary winding and the T-seat primary winding in at least one Scott transformers are each magnetically coupled with each of the secondary windings having the same number of turns. The multiple of two loads are connected to the secondary windings so that no secondary windings appear without a load connected thereto. Thus, an AC voltage can be uniformly applied to the heating lamps without increasing any burden on the primary side. | 02-23-2012 |
20120037502 | Sintered Body for ZnO-Ga2O3-Based Sputtering Target and Method of Producing the Same - [Object] To provide a sintered body for a ZnO—Ga | 02-16-2012 |
20120034731 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD - A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device. The system includes: an i-layer-formation reaction chamber comprising at least a first film formation section, a second film formation section, and a third film formation section, the i-layer-formation reaction chamber forming the i-type semiconductor layer, the first film formation section, the second film formation section, and the third film formation section being sequentially arranged along a transfer direction in which the substrate is transferred; and a plurality of door valves separating the first film formation section, the second film formation section, and the third film formation section so that the length of the second film formation section is greater than the lengths of the first film formation section and the third film formation section in the transfer direction. | 02-09-2012 |
20120031650 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer( | 02-09-2012 |
20120025395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO | 02-02-2012 |
20120018664 | METHOD OF PRODUCING A LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, AND LEAD ZIRCONIUM TITANATE-BASED SPUTTERING TARGET - To obtain a method of producing a high-density lead zirconium titanate-based sintered body having uniform crystalline phases and containing a large amount of PbO, provided is a method of producing a lead zirconium titanate-based sintered body, including: producing a pre-sintered body by sintering raw material powder of lead zirconium titanate having a stoichiometric composition at a temperature of 900° C. or more and 1,200° C. or less; pulverizing the pre-sintered body; producing lead-excessive mixed powder by adding PbO powder to powder obtained by pulverizing the pre-sintered body; and sintering the lead-excessive mixed powder at a temperature lower than the sintering temperature of the pre-sintered body. Because the sintering process is divided into two stages, a high-density (e.g., 95% or more) PZT sintered body constituted only of PZT having a stoichiometric composition in which PbZrO | 01-26-2012 |
20120015473 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM, AND METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer. | 01-19-2012 |
20120015453 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: forming a photoelectric converter which has a plurality of compartment elements that are separated by a scribing line and in which adjacent compartment elements are electrically connected; detecting a structural defect existing in the compartment element; specifying a position in which the structural defect exists, as distance data indicating a distance between the structural defect and the scribing line that is closest to the structural defect; and removing a region in which the structural defect exists based on the distance data. | 01-19-2012 |
20120008925 | TEMPERATURE SENSING DEVICE AND HEATING DEVICE - A technology to control temperature of a large substrate to be heated. A temperature sensing device is disposed lateral to a region where a radiation heater faces a substrate to be heated inside a heating chamber. A heating device has the heating chamber, the radiation heater, a power-supply device, a substrate-holding device, a control device, and the temperature sensing device. A control program is built into the control device, according to which the power-supply device controls the power applied to the radiation heater to generate heat such that the temperature of the temperature measurement substrate detected by a thermocouple of the temperature sensing device becomes a set temperature. Furthermore, a circulation passage is disposed in close contact with the temperature-sensing device, and with a coolant flowing through the circulation passage, the temperature of the temperature measurement substrate can be cooled from the set temperature to an initial temperature. | 01-12-2012 |
20120003841 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts. | 01-05-2012 |
20110315985 | SENSOR-FITTED SUBSTRATE AND METHOD FOR PRODUCING SENSOR-FITTED SUBSTRATE - A sensor-fitted substrate allowing a sensor-fitted wafer for measuring the temperature or strain to be produced inexpensively, moreover, allowing measurements of the temperature or strain to be carried out with satisfactory accuracy, and a method for producing such a sensor-fitted substrate. An undercoat film is formed on the surface of a substrate, the film being configured, compared to when no undercoat film is formed, to allow the strength of close contact of a dispersed nano-particle ink with the substrate to be increased, the diffusion of the dispersed nano-particle ink into the substrate to be suppressed, and the growth of metal crystal particles contained in the dispersed nano-particle ink to be suppressed. A wiring pattern of the sensor is traced on the surface of the undercoat film of the substrate surface by using the dispersed nano-particle ink, and the dispersed nano-particle ink is baked and metalized. | 12-29-2011 |
20110315872 | OXYGEN DETECTION METHOD, AIR LEAKAGE DETERMINATION METHOD, GAS COMPONENT DETECTION DEVICE, AND VACUUM PROCESSING APPARATUS - An oxygen detection method, includes: preparing a grid, an ion collector, and a filament in which an oxide are formed on a surface of metal; controlling a filament current flowing to the filament so that an emission current becomes constant; discharging thermionic electrons which are caused by heat generation by applying the filament current, and generating ions by ionizing a gas; capturing the ions with the ion collector; and detecting oxygen being present in a vacuum processing chamber by measuring a filament current value. | 12-29-2011 |
20110315191 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A frameless solar cell panel includes: a stacked body ( | 12-29-2011 |
20110309444 | THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER - This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target. | 12-22-2011 |
20110308565 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A solar cell module includes: a plurality of photovoltaic cells including a layered body in which a first electrode layer, a power generation layer, and a second electrode layer are layered in series, the photovoltaic cells being electrically connected with each other in series; a scribe line separating the photovoltaic cells that are adjacent to each other in the photovoltaic cells; a scribe hole that is formed so as to penetrate through the power generation layer and the second electrode layer; and a bypass pathway that is formed of a shunt region, the shunt region being generated at a periphery of the scribe hole. | 12-22-2011 |
20110300694 | ELECTRODE CIRCUIT, FILM FORMATION DEVICE, ELECTRODE UNIT, AND FILM FORMATION METHOD - An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit. | 12-08-2011 |
20110298738 | Touch panel - A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken. | 12-08-2011 |
20110294256 | FILM-FORMING METHOD FOR FORMING PASSIVATION FILM AND MANUFACTURING METHOD FOR SOLAR CELL ELEMENT - The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portion | 12-01-2011 |
20110292561 | TRAY FOR TRANSPORTING WAFERS AND METHOD FOR FIXING WAFERS ONTO THE TRAY - A tray for transporting a wafer is herein provided, which can control the temperature of the wafer upon the processing thereof, and which can easily fix the wafer without reducing the effective area on the surface of the wafer and without requiring much time for the adhesion of the wafer thereto and without requiring any post-treatment after the wafer is detached from or attached to the tray. The tray | 12-01-2011 |
20110272021 | METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL - A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film. | 11-10-2011 |
20110265921 | Ta SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME - A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method. | 11-03-2011 |
20110256659 | METHOD FOR MANUFACTURING SOLAR CELL, ETCHING DEVICE, AND CVD DEVICE - A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film. | 10-20-2011 |
20110256003 | DRY VACUUM PUMP - Between an exhaust chamber and a lubrication chamber, a second seal that seals between a cylinder that partitions the exhaust chamber and a first shaft and a first seal that seals between a side cover that partitions the lubrication chamber and the first shaft are provided. A gas introduction space to which a seal gas is supplied is provided between the second seal | 10-20-2011 |
20110248182 | ION IMPLANTING APPARATUS - An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured. | 10-13-2011 |
20110242700 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - The following abstract replace prior abstract in the application. It is an object to provide a simple and practical method capable of producing a magnetic storage medium of a type such as a bit-patterned type, a magnetic storage medium of the above-mentioned type and an information storage device which may be produced by such a simple and practical method, and in a method of producing a magnetic disk, there are performed: a film-forming process of forming, on a glass substrate | 10-06-2011 |
20110240600 | VACUUM PROCESSING METHOD AND VACUUM PROCESSING APPARATUS - A processing gas is introduced to remove an oxide film on the surface of a silicon substrate | 10-06-2011 |
20110233550 | Method for producing a thin film transistor, and a thin film transistor - Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer. | 09-29-2011 |
20110232573 | Catalytic Chemical Vapor Deposition Apparatus - [Object] To provide a catalytic chemical vapor deposition apparatus capable of prolonging the service life of a catalyst wire. | 09-29-2011 |
20110227294 | Seal Mechanism and Treatment Apparatus - [Object] To provide a seal mechanism that reduces a maintenance frequency for replenishment of a lubricating material and has small friction resistance, and a treatment apparatus equipped with the seal mechanism.
| 09-22-2011 |
20110212272 | MANUFACTURING METHOD FOR MAGNETIC RECORDING MEDIUM - A magnetic recording medium having a high magnetic pattern contrast is manufactured. By changing an acceleration voltage that accelerates ions in a process gas, depths (peak depths D | 09-01-2011 |
20110211936 | CONVEYING DEVICE AND VACUUM APPARATUS - The present invention provides a technology for holding an object to be reliably conveyed for the sake of high speed conveyance not only in a low temperature environment but also in a high temperature environment, and for reducing dust while conveying the object to be conveyed. A conveying device includes a link mechanism, which can expand and contract, has a plurality of arms to which power from a drive source is transmitted, and a mounting section which is connected to an operating tip section of the link mechanism through a drive link section and on which a substrate is mounted. The mounting section has latch sections for making contact with and latching side portions of the substrate. The drive link sections of the link mechanism are provided with cam mechanism-based pressing means. The pressing means includes cam drive surfaces which are formed on the drive link sections of the link mechanism, and a follower mechanism section having a protruded-shaped pressing section which has follower rollers being in contact with and capable of following the cam drive surfaces and is guided and moved toward the latch sections of the mounting section by movement of the follower rollers. | 09-01-2011 |
20110211027 | PRINT HEAD, PRINTER - Vibration is prevented from being transmitted via a fixed substrate. In order to set the resonance frequencies of the vibration of piezoelectric vibrators to be different from each other, the piezoelectric vibrators having different lengths are attached to the same fixed substrate. Even if residual vibration of a pressure generation chamber, which is expanded/contracted by a piezoelectric vibrator to which a voltage is applied, is transmitted to the fixed substrate; and even if the vibration is transmitted to another piezoelectric vibrator via the fixed substrate; another piezoelectric vibrator does not vibrate because the resonance frequencies between the piezoelectric vibrators are different from each other. Consequently, the pressure generation chamber in contact with the piezoelectric vibrator is not expanded or contracted by the vibration. | 09-01-2011 |
20110211026 | PRINT HEAD, PRINTER - Vibration is prevented from being transmitted via a common ink chamber or a fixed substrate. A porous member is disposed between the common ink chamber and a pressure generation chamber so that a discharge liquid passes through the interior of the porous member to move from the common ink chamber to the pressure generation chamber. Vibration generated in one pressure generation chamber is attenuated through the porous member when the vibration is transmitted to another pressure generation chamber via the common ink chamber; and thus, no cross-talk is generated. Furthermore, when piezoelectric vibrators having different lengths are mounted on the same fixed substrate and have the resonance frequencies different from each other, vibration is not transmitted to another pressure generation chamber via the fixed substrate and the piezoelectric vibrator; and therefore, the cross-talk is much less likely to be generated. | 09-01-2011 |
20110209830 | Take-Up Vacuum Processing Apparatus - [Object] To provide a take-up vacuum processing apparatus that prevents breakage due to heat generation and occurrence of dielectric breakdown and is suitable for life extension. | 09-01-2011 |
20110207261 | MASK AND FILM FORMATION METHOD USING THE SAME - A mask includes: a tabular first section which includes a side portion and an opening portion formed at a position corresponding to a film formation region of a substrate and on which the substrate is to be disposed so that the first section overlaps a face of the substrate on which a film is to be formed; and a second section which is provided along the side portion of the first section, and covers at least one of portions of a side face of the substrate, wherein second sections of two adjacent masks overlap each other and a superposed section is thereby formed when a plurality of masks are arrayed in a lateral direction thereof. | 08-25-2011 |
20110205663 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - It is an object to produce a magnetic storage medium of a high recording density by a production method that does not impair mass productivity, and a magnetic storage medium | 08-25-2011 |
20110204519 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers. | 08-25-2011 |
20110204466 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber. | 08-25-2011 |
20110201150 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-18-2011 |
20110200741 | ORGANIC THIN FILM DEPOSITION DEVICE, ORGANIC EL ELEMENT MANUFACTURING DEVICE, AND ORGANIC THIN FILM DEPOSITION METHOD - An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time. | 08-18-2011 |
20110200481 | WATER-COLLAPSIBLE Al COMPOSITE MATERIAL, Al FILM AND Al POWDER CONSISTING OF THIS MATERIAL, AND METHODS FOR PREPARATION THEREOF, AS WELL AS COMPONENT MEMBERS FOR CONSTITUTING FILM-FORMING CHAMBERS AND METHOD FOR THE RECOVERY OF FILM-FORMING MATERIALS - In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof. Film-forming operations are continued over a long period of time using the component member for a film-forming chamber provided with the water-collapsible Al film and then film-forming materials can be recovered from the component member on which the film-forming materials are deposited in a substantial thickness. | 08-18-2011 |
20110199442 | DISCHARGE DEVICE - The back pressure of an ink tank is controlled. A porous body is arranged inside the ink tank, the lower end of the porous body contacts an ink, and the ink ascends inside the porous body due to a capillary force. The upper end of the porous body is not immersed in the ink, and a maximum ascending force acts upon the ink stored in the ink tank. Therefore, the ink does not leak from a discharge head located lower than the ink tank. Further, because the ink is accumulated under the porous body and the amount of the ink contacting the porous body is small, components of the ink are less susceptible to deterioration. | 08-18-2011 |
20110199441 | DISCHARGE UNIT AND DISCHARGE APPARATUS - The backing pressure of an ink tank is controlled. The ink tank is connected to a pressure control apparatus. The pressure control apparatus has first and second check valves. When the internal pressure of the ink tank becomes smaller than that of outside atmosphere by a first predetermined pressure or more, the first check valve is switched into an open state to connect the outside atmosphere and the ink tank. To the contrary, when the internal pressure of the ink tank becomes larger than that of outside atmosphere by a second predetermined pressure or more, the second check valve is switched to an open state to connect the ink tank with the outside atmosphere. Therefore, the internal pressure of the ink tank is controlled precisely enough to stabilize the meniscus. | 08-18-2011 |
20110198555 | CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF - A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises an underlayer film formed at least on a bottom portion of the contact hole and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole. | 08-18-2011 |
20110198213 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-18-2011 |
20110195562 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-11-2011 |
20110194961 | DRY PUMP - A dry pump includes: a plurality of cylinders; a pump chamber formed in each of the cylinders; a division wall separating pump chambers adjacent to each other; a plurality of rotors contained inside pump chambers; a rotating shaft that serves as an axis of rotation of the rotor; and a cooling medium path which is formed inside the division wall and through which a cooling medium passes. | 08-11-2011 |
20110194207 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - It is an object to provide a simple method capable of producing a magnetic storage medium, a magnetic storage medium and an information storage device which may be produced by a simple production method with a high recording density, and a magnetic disk is produced by a production method having: a film-forming process of forming, on a substrate | 08-11-2011 |
20110194181 | FILM FORMING METHOD FOR ANTIREFLECTION FILM, ANTIREFLECTION FILM, AND FILM FORMING DEVICE - A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas. | 08-11-2011 |
20110192719 | SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM - This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included. | 08-11-2011 |
20110192546 | WATER-COLLAPSIBLE Al COMPOSITE MATERIAL, Al FILM AND Al POWDER CONSISTING OF THIS MATERIAL, AND METHODS FOR PREPARATION THEREOF, AS WELL AS COMPONENT MEMBERS FOR CONSTITUTING FILM-FORMING CHAMBERS AND METHOD FOR THE RECOVERY OF FILM-FORMING MATERIALS - In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof. Film-forming operations are continued over a long period of time using the component member for a film-forming chamber provided with the water-collapsible Al film and then film-forming materials can be recovered from the component member on which the film-forming materials are deposited in a substantial thickness. | 08-11-2011 |
20110192047 | FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD - [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles. | 08-11-2011 |
20110189817 | MANUFACTURING METHOD FOR SOLAR CELL - A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask. | 08-04-2011 |
20110189498 | EVAPORATING MATERIAL AND METHOD OF MANUFACTURING THE SAME - There is provided an evaporating material of thin plate shape which can be manufactured at a reduced cost and at high productivity, the evaporating material being adapted for use in enhancing the coercive force of neodymium-iron-boron sintered magnet by heat treatment while evaporating Dy in vacuum or in reduced-pressure inert gas atmosphere. The evaporating material of this invention has a core member la made of a fire-resistant metal having a multiplicity of through holes, and is made by melting a rare-earth metal or an alloy thereof so as to get adhered to, and solidified on, the core member. In this case, the above-mentioned adhesion is performed by dipping the core member into a molten bath of the rare-earth metal or an alloy thereof, and pulling it out of the molten bath. | 08-04-2011 |
20110189384 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; a first carrier that holds a pre-processed substrate; and a second carrier that holds a post-processed substrate, wherein the loading-ejecting chamber simultaneously stores the first carrier and the second carrier. | 08-04-2011 |
20110186225 | MAGNETIC RECORDING MEDIUM MANUFACTURING DEVICE - A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state. The magnetic recording medium manufactured device is provided with a substrate carrier for carrying the substrate into which the ion beam is implanted from the ion implantation chamber to the ashing chamber. | 08-04-2011 |
20110180402 | Vacuum Processing Apparatus - To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved. | 07-28-2011 |
20110180388 | Plasma Processing Method and Plasma Processing Apparatus - [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. | 07-28-2011 |
20110176576 | MELTING FURNACE - A melting furnace of the present invention includes a sealed container containing an inert gas atmosphere, a crucible that is located inside the sealed container and melts a raw material by induction heating, and a crucible cooling mechanism. The crucible cooling mechanism includes a pipe portion that includes an intake that communicates with the sealed container and enables the inert gas to be discharged from the sealed container, and an outlet that enables the inert gas to be introduced into the sealed container, a heat exchange portion that is located partway along the pipe portion, and a gas transporting portion that is located partway along the pipe portion. | 07-21-2011 |
20110171757 | METHOD OF MANUFACTURING PHOTOVOLTAIC CELL - Provided is a method of manufacturing a photovoltatic cell according to the present invention, the photovoltatic cell including a substrate, and a structure in which a first conductive layer, a photoelectric conversion layer and a second conductive layer are superposed on the substrate in this order; the structure is electrically separated by a predetermined size to form a plurality of compartment elements; and the compartment elements adjacent to each other are electrically connected to each other, the method including: a defect region specifying step of specifying a region in which a structural defect exists from the plurality of compartment elements; and a repairing step of irradiating the region or the periphery thereof with a laser beam to remove the structural defect, wherein the repairing step includes a step α of irradiating the structure with a first laser to remove or separate the region, and a step β of irradiating an end portion of the structure generated by the removal or separation with a second laser to clean the end portion, and wherein the second laser uses a laser obtained by defocusing the first laser so that a focus position thereof is away from the substrate. | 07-14-2011 |
20110162710 | SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD - A solar cell includes: a photoelectric converter in which a first electrode layer, a photoelectric conversion layer, and a second electrode layer are stacked on a substrate in order; and a texture layer that is disposed between the substrate and the first electrode layer, made of a transparent material in a visible light region, and has a continuous irregular configuration on a face that is in touch with the first electrode layer. | 07-07-2011 |
20110155232 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere. | 06-30-2011 |
20110151591 | PHOTOVOLTAIC CELL MANUFACTURING METHOD - The present invention provides a photovoltaic cell manufacturing method, the photovoltaic cell including: a photoelectric converter in which at least a first electrode layer, a semiconductor layer, and a second electrode layer are stacked in layers in this order being formed on a face of a substrate; and a connection portion of the first electrode layer and the second electrode layer, the photoelectric converter having a plurality of compartment elements which are electrically separated by a predetermined size using scribing lines at which the semiconductor layer and the second electrode layer are removed, adjacent compartment elements being electrically connected to each other, the photovoltaic cell manufacturing method comprising: a defect region specifying step in which a region at which the structural defect exists is specified in the photoelectric converter; and a repairing step in which at least three repair lines in which the semiconductor layer and the second electrode layer are removed are formed by irradiating the photoelectric converter with a laser, the region at which the structural defect exists is surrounded by at least three repair lines described above and one of the scribing lines, and the structural defect is removed or separated off, wherein one of at least three repair lines described above are formed at a region between the structural defect and the connection portion and at a region α including a contact portion of the semiconductor layer and the substrate in the photoelectric converter. | 06-23-2011 |
20110151237 | SURFACE-TREATED CERAMIC MEMBER, METHOD FOR PRODUCING THE SAME AND VACUUM PROCESSING APPARATUS - Disclosed is a surface-treated ceramic member which has a coating film-formed surface comprising a ceramic sintered body with a porosity of 1% or less and a sol-gel coating film of a silicon alkoxide compound polymer formed on at least a part of a ceramic sintered body, wherein the coating film and the surface of the body are coexistent in the coating film-formed surface. Specifically the area of the sol-gel coating film accounts for 5 to 80% of the total area of the coating film-formed surface. The surface-treated ceramic member has excellent corrosion resistance and is free from scattering of particles. | 06-23-2011 |
20110149000 | INKJET PRINTHEAD MODULE WITH ADJUSTABLE ALIGNMENT - A microdeposition system includes a stage, a printhead carriage, and a controller. The stage holds a substrate. The printhead carriage includes N printhead modules, where N is an integer greater than one. Each of the N printhead modules includes a printhead and an alignment mechanism. The printhead includes a plurality of nozzles that deposit droplets of fluid manufacturing material onto the substrate while relative movement between the substrate and the printhead is along a first axis. The alignment mechanism adjusts the printhead with respect to the printhead module. The controller controls the alignment mechanisms of the N printhead modules to set effective nozzle spacing for the pluralities of nozzles to a uniform value. The effective nozzle spacing is defined as spacing between adjacent ones of the plurality of nozzles as projected onto a second axis perpendicular to the first axis. | 06-23-2011 |
20110148985 | PARALLEL MOTION SYSTEM FOR INDUSTRIAL PRINTING - A microdeposition system includes a printhead carriage that moves along a first axis; a stage that holds a substrate; a rail located above the printhead carriage and extending along a third axis parallel to the first axis; and an accessory carriage that travels along the rail to remain above the printhead carriage. The printhead carriage includes a plurality of nozzles that deposit droplets of fluid material onto the substrate. | 06-23-2011 |
20110146574 | INKJET ULTRASONIC CLEANING STATION - A microdeposition system includes a printhead carriage that includes N rows of nozzles and that moves along a first axis; a stage that holds a substrate; and a maintenance station located at a position along the first axis that is past an edge of the substrate. The N rows of nozzles selectively deposit droplets of fluid manufacturing material onto the substrate. The maintenance station includes a capping station and an ultrasonic cleaning station located in a middle of the capping station. N is an integer greater than one. | 06-23-2011 |
20110143033 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time | 06-16-2011 |
20110135559 | SILICON PURIFICATION METHOD - A silicon purification method includes: loading a base material that is a starting material made of metallic silicon into a graphite crucible, heating and melting all of the base material which is disposed in an acidic inert gas atmosphere, maintaining the molten base material in the graphite crucible, and thereby oxidatively purifying the base material; loading the oxidatively-purified base material into a water-cooled crucible, gradually solidifying the base material after the base material disposed in a high vacuum atmosphere is fully molten, and thereby removing an unsolidified portion; and fully melting the base material which is disposed in a high vacuum atmosphere and in which the unsolidified portion is removed, and maintaining the base material in the water-cooled crucible. | 06-09-2011 |
20110135187 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: detecting a structural defect existing in compartment elements; obtaining an image by capturing a region including the structural defect and the scribe line with a predetermined definition; specifying first number of pixels on the image, the first number of pixels corresponding to a distance between the scribe lines adjacent to each other or corresponding to a width of the scribe line; referring to an actual value indicating the distance between the scribe lines adjacent to each other or indicating the width of the scribe line, the distance being preliminarily stored, and the width of the scribe line being preliminarily stored; calculating an actual size of one pixel on the image by comparing the first number of pixels with the actual value; specifying second number of pixels on the image, the second number of pixels corresponding to the distance between the structural defect and the scribe line; comparing the second number of pixels with the actual size of one pixel, thereby calculating defect position information; and electrically separating the structural defect by irradiation with the laser light based on the defect position information. | 06-09-2011 |
20110132142 | SILICON PURIFICATION METHOD - A silicon purification method includes a solidification purification step in which metal impurities are removed by irradiating a base material made of metallic silicon with an electron beam. The solidification purification step sequentially includes: preparing the base material to be purified at one time, loading a part of the base material into a water-cooled crucible, irradiating, with the electron beam, the entire area of the part of the loaded base material that is disposed under a high vacuum atmosphere, and thereby fully melting the part of the base material; gradually solidifying the molten part of the base material from a molten metal bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a first predetermined ratio of the total of the base material; further loading the remnant of the base material into the water-cooled crucible, and fully melting the remnant of the base material by irradiating the entire area of the remnant of the base material with the electron beam; gradually solidifying the molten metal portion from a bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a second predetermined ratio of the total of the molten metal portion; and removing an unsolidified molten metal portion. | 06-09-2011 |
20110126902 | APPARATUS AND METHOD FOR MANUFACTURING THIN FILM SOLAR CELL, AND THIN FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell that increase homogeneity in film characteristics. In a process of conveying a substrate from one roll to another roll, a power generation layer, which is a laminated body of a plurality of semiconductor layers, is formed in a plurality of film formation compartments partitioned along a conveying direction between the roll pair. A plurality of flat application electrodes are laid out in the conveying direction facing toward the substrate in each film formation compartment. Each flat application electrode includes a power supply terminal supplied with high frequency power in a VHF band. When the wavelength of the high frequency power is represented by λ, the distance between an edge of the flat application electrode and the power supply terminal is set to be shorter than λ/4 in a direction orthogonal to the conveying direction. | 06-02-2011 |
20110126670 | METHOD FOR REFINING METAL - A method for refining a metal such that, after a base material derived from the metal is melted by being irradiated with an electron beam, the base material is refined by solidifying the base material which was melted, the method including: a step melting all of the base material by irradiating the electron beam over an entire surface of the base material loaded inside a water-cooled crucible placed inside a high vacuum atmosphere; a step gradually solidifying the base material which was melted from a molten metal bottom part of the base material which was melted toward a molten metal surface part at a side being irradiated by the electron beam by gradually weakening an output of the electron beam while maintaining a condition in which the base material which was melted is irradiated with the electron beam; and a step removing a molten metal part which is not solidified, after the base material which was melted is solidified to a certain percentage. | 06-02-2011 |
20110122526 | MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE - A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot. | 05-26-2011 |
20110120553 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell, includes a scribing step in which grooves electrically-separating a photoelectric converter into a plurality of compartment sections are formed after the photoelectric converter is formed on a substrate by stacking a first-electrode layer, a photoelectric conversion layer, and a second-electrode layer in this order; a first groove, a second groove, a third groove, and a fourth groove are formed in the scribing step; the method including an insulating-layer forming step in which an insulating layer is formed after the scribing step and a wiring layer forming step in which a wiring layer is formed; the wiring layer passes from the first-electrode layer that is exposed at a bottom face of the second groove, through the inside of the second groove and a surface of the insulating layer, to a surface of the second-electrode layer that is disposed so as to be lateral to the fourth groove opposite to the second groove; and the wiring layer electrically connects the plurality of compartment sections to each other. | 05-26-2011 |
20110120370 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber which stores a substrate; and an electrode unit which performs film formation using a CVD method on the substrate in the film forming chamber. The electrode unit has an anode and a cathode; and a side wall portion which holds the anode and the cathode and forms a part of a wall portion of the film forming chamber, and is attachable to and detachable from the film forming chamber. | 05-26-2011 |
20110117742 | PLASMA PROCESSING METHOD - [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions. | 05-19-2011 |
20110117289 | Deposition Apparatus and Deposition Method - [Object] To provide a deposition apparatus and a deposition method that are capable of reducing an evacuation time in an evacuation system having a large condensing load to improve productivity. | 05-19-2011 |
20110114161 | Thin-Film Solar Battery Module Manufacturing Method and Thin-Film Solar Battery Module - [Object] To provide a thin-film solar battery module manufacturing method and a thin-film solar battery module that are capable of securing dielectric breakdown voltage characteristics of high reliability. | 05-19-2011 |
20110113644 | FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD - [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a collection rate of a raw material without a need for providing a member such as a baffle plate or the like. | 05-19-2011 |
20110113643 | FREEZE-DRYING APPARATUS - [Object] To provide a freeze-drying apparatus capable of achieving an increase of a processing capacity without causing a variation of a particle diameter. | 05-19-2011 |
20110108114 | SOLAR CELL AND METHOD OF MANUFACTURING SAME - This solar cell has: a light transmissive first electrode; a photoelectric conversion layer formed of silicon; a light transmissive buffer layer; and a second electrode formed of a light reflective alloy. The second electrode is formed of a silver alloy including silver (Ag) as a main component with at least one of tin (Sn) and gold (Au) contained therein. | 05-12-2011 |
20110108107 | Thin-Film Solar Battery Module and Method of Manufacturing the Same - [Object] To provide a thin-film solar battery module and a method of manufacturing the thin-film solar battery module that are capable of improving connection reliability of an external connection terminal and reducing connection resistance thereof. | 05-12-2011 |
20110107969 | APPARATUS FOR MANUFACTURING THIN-FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell of the present invention has a film forming chamber in which a substrate is arranged so that the film formation face of the substrate is substantially parallel to the direction of gravitational force and a film is formed on the film formation face by a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face the cathodes, respectively, at a separation distance therefrom; and a conveying part which supports the substrate and conveys the substrate to between the cathode and the anode facing the cathode. The separation distance is variable. | 05-12-2011 |
20110104890 | METHOD FOR FORMING CU ELECTRICAL INTERCONNECTION FILM - Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed. | 05-05-2011 |
20110100297 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; transfer rail that is laid at the film forming chamber and the loading-ejecting chamber; a carrier that holds the substrate and moves along the transfer rail; and a carrier transfer mechanism that transfers the carrier, wherein, the carrier transfer mechanism is provided in the loading-ejecting chamber to transfer the carrier between the film forming chamber and the loading-ejecting chamber. | 05-05-2011 |
20110100296 | FILM FORMATION APPARATUS - A film formation apparatus includes: a film forming chamber in which a desired film is formed on a substrate in a vacuum; a loading-ejecting chamber fixed to the film forming chamber with a first opening-closing section interposed therebetween, being capable of reducing a pressure inside the loading-ejecting chamber so as to form a vacuum atmosphere; a second opening-closing section provided at a face opposite to the face of the loading-ejecting chamber on which the first opening-closing section is provided; and a carrier holding the substrate so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, wherein the carrier or the substrate passes through the second opening-closing section, and is transported to the loading-ejecting chamber and is transported from the loading-ejecting chamber; a plurality of carriers is disposed in the loading-ejecting chamber in parallel to each other; the plurality of carriers is transported in parallel between the loading-ejecting chamber and the film forming chamber; and a film is simultaneously formed on a plurality of substrates that is held by the plurality of carriers in the film forming chamber. | 05-05-2011 |
20110094446 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus, includes: a film formation space in which a substrate is disposed so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, and in which a desired film is formed on the film formation face by a CVD method; a cathode unit including cathodes to which a voltage is applied, and two or more power feeding points, the cathodes being disposed at both sides of the cathode unit; and an anode distantly disposed so as to face the cathodes that are disposed at both sides of the cathode unit. | 04-28-2011 |
20110094445 | APPARATUS FOR MANUFACTURING THIN-FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell of the present invention includes a film forming chamber in which a film is formed on a film formation face of a substrate using a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face a different one of the cathodes, at a separation distance therefrom; a mask for covering a peripheral edge portion of the substrate; and a discharge duct installed around the cathode unit. A film formation space is formed between the cathode unit and the substrate installed on the side of the anode, an evacuation passage is formed between the mask and the cathode unit, the discharge duct and the film formation space are connected together via the evacuation passage, and a film forming gas introduced into the film formation space is evacuated from the discharge duct through the evacuation passage. | 04-28-2011 |
20110092071 | METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL - Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film ( | 04-21-2011 |
20110091661 | APPARATUS FOR PRODUCING MULTILAYER SHEET AND METHOD OF PRODUCING THE MULTILAYER SHEET - An apparatus for producing a multilayer sheet including a resin film, a vapor-deposited metal film and a vapor-deposited polymer film at a low cost and with excellent productivity is provided which comprises: a vacuum chamber which is made to be in a vacuum state by exhaust means; a feeding roller; a take up roller; a first to third rollers, first metal vapor deposition means for forming a first vapor-deposited metal film on one surface of a resin film at a periphery of the first roller; vapor deposition polymerization means for forming a vapor-deposited polymer film on the first vapor-deposited metal film by vapor deposition polymerization at a periphery of the second roller; and second metal vapor deposition means for forming the second vapor-deposited metal film on the other surface of the resin film at a periphery of the third roller. | 04-21-2011 |
20110091650 | METHOD OF FORMING ORGANIC POLYMER THIN FILM AND AN APPARATUS FOR FORMING THE ORGANIC POLYMER THIN FILM - A technique for forming an organic polymer thin film on a surface of a substrate with high film formation efficiency and excellent reproducibility and stability is provided. When a vacuum deposition polymerization for forming an organic polymer thin film is performed on a surface of a substrate | 04-21-2011 |
20110089026 | TOUCH PANEL MANUFACTURING METHOD AND FILM FORMATION APPARATUS - A touch panel manufacturing method is a method for manufacturing a touch panel including a transparent substrate having a main surface on which a transparent-electroconductive film is formed. The transparent-electroconductive film is formed on the main surface of the transparent substrate by carrying out sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three gases selected from a group consisting of hydrogen gas, oxygen gas, and water vapor. | 04-21-2011 |
20110069473 | Display device, apparatus for producing display device, and method for producing display device - A display device free from a deterioration in luminescence efficiency is provided. In the display device of the present invention, since an inorganic film is formed after concave parts in which luminescence portions are positioned are filled with a filling film, no crack is formed in the inorganic film. Since the inorganic film is made of a material having high gas tightness and heat conductivity (such as, diamond-like carbon or AlN), water and oxygen will hardly penetrate the luminescence portions, and heat of the luminescence portions will be conducted to the inorganic film, so that the luminescence portions do not reach high temperatures. Further, since a gap between first and second panels is filled with a resin film, the atmosphere does not enter from the outside. Because the luminescence portions are free from damage from water, oxygen and heat, the display device of the present invention has a prolonged life. | 03-24-2011 |
20110068402 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film | 03-24-2011 |
20110068338 | METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit. | 03-24-2011 |
20110064198 | ANALYTICAL METHOD - The object of the present invention is to analyze a functional organic compound with high accuracy. In the present invention, cluster ions are accelerated so that the kinetic energy of cluster ions is less than 3.1 eV per one atom that makes up the cluster ion and the cluster ions enter a sample. Since the functional organic compound in the sample is etched without the breakdown of the chemical structure, the functional organic compound, which has not been chemically denatured, is exposed on the surface of the sample. By alternately performing the etching and the surface analysis of the sample, or performing the surface analysis of the sample while performing the etching, the sample can be accurately analyzed in the depth direction. | 03-17-2011 |
20110052832 | FILM FORMING METHOD AND FILM FORMING APPARATUS - An object of the present invention is to provide a reflection film formation technology which achieves the simplification of an apparatus structure and the cost reduction thereof. A film forming method of the present invention includes a reflection film formation step (P | 03-03-2011 |
20110048926 | MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD - The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate. | 03-03-2011 |
20110048563 | SWITCH VALVE - A switch valve having a long span of life is provided. The switch valve | 03-03-2011 |
20110048319 | SUBSTRATE TRANSFER PROCESSING APPARATUS - A substrate transfer processing apparatus capable of processing a substrate at high speed is provided. A mounting table on which a substrate is mounted includes a plate-shaped main body and a recessed part formed in a rear surface of the plate-shaped main body. Since the mounting table is lightweight as compared to the mounting table before the recessed part is formed therein, the load on a motor is small and the running cost is low even when the mounting table is moved at high speed. Because the plate-shaped main body is made of granite, the mounting surface can be made flat and smooth by polishing. Since the mounting surface is flat and smooth, the accuracy in positioning the substrate is high. | 03-03-2011 |
20110042876 | STAGE - Provided is a substrate stage which can transfer a substrate at a high speed. In the substrate stage of the present invention, auxiliary mounting tables are attached to a main mounting table, and lower rails are arranged over on the main mounting table and above the auxiliary mounting tables. When both ends of the lower rails are bent upwardly by a vertically adjusting unit in order to prevent the both ends of the lower rails to be bent downwardly, the lower rails are made straight. Since the lower rail is not divided, the linearity is ensured and the moving plate does not stutter so that transfer of the substrate at high speed can be performed. | 02-24-2011 |
20110042208 | FILM FORMING SOURCE, VAPOR DEPOSITION APPARATUS, AND APPARATUS FOR MANUFACTURING AN ORGANIC EL ELEMENT - A film forming source capable of forming a thin film having a good film quality is provided. Since each switch valve becomes a closed state when a blocking member closely contacts a melted metal, a gas blocking performance in the closed state is high, and no dust is generated. When vapors of different vapor deposition materials are generated in a plurality of vapor generating units, the vapor generated in a selected vapor generating unit is not mixed with the vapor from another vapor deposition apparatus. Therefore, a vapor deposition material not to be film-formed is not mixed in, and contamination due to dust generation does not occur. Consequently, a thin film having good film quality can be obtained. | 02-24-2011 |
20110041763 | WATER-REACTIVE AL COMPOSITE MATERIAL, WATER-REACTIVE AL FILM, PROCESS FOR THE PRODUCTION OF THE AL FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a water-reactive Al composite material which comprises 4NAI or 5NAI, as an Al raw material, containing, on the basis of the amount of the Al raw material, added Bi in an amount ranging from 0.8 to 1.4% by mass and Si, including the Si as an impurity of the Al raw material, in a total amount ranging from 0.25 to 0.7% by mass; a thermally sprayed Al film produced using this Al composite material; a method for the production of this Al film; and a constituent member for a film-forming chamber, which is provided, on the surface, with the thermally sprayed Al film. | 02-24-2011 |
20110041762 | METHOD FOR THE PRODUCTION OF WATER-REACTIVE AL FILM AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a method for the production of a water-reactive Al film which comprises the steps of melting a material which comprises 4NAl or 5NAl as an Al raw material and added In in an amount ranging from 2 to 5% by mass on the basis of the mass of the Al raw material in such a manner that the composition of the material becomes uniform; thermally spraying the resulting molten material on the surface of a base material according to the electric arc spraying technique, while using Ar gas as a spraying gas; and solidifying the sprayed molten material through quenching to thus form an Al film in which In is uniformly dispersed in Al crystalline grains; and a constituent member for a film-forming chamber, which is provided, on the surface, with this water-reactive Al film. | 02-24-2011 |
20110041761 | WATER-REACTIVE AL COMPOSITE MATERIAL, WATER-REACTIVE AL FILM, PROCESS FOR THE PRODUCTION OF THE AL FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a water-reactive Al composite material comprising an Al raw material selected from the group consisting of 2NAl to 5NAl each containing Cu as an impurity of Al in an amount of not higher than 40 ppm, and at least one metal selected from the group consisting of In and Bi, in amounts ranging from 2 to 5% by mass and 0.7 to 1.4% by mass, respectively, on the basis of the mass of Al; a water-reactive Al film produced using this composite material; a method for the production of this Al film; and a constituent member for a film-forming chamber, which is provided, on the surface, this water-reactive Al film. | 02-24-2011 |