SUMCO TECHXIV KABUSHIKI KAISHA Patent applications |
Patent application number | Title | Published |
20120222613 | SINGLE CRYSTAL SILICON PULLING DEVICE, METHOD FOR PREVENTING CONTAMINATION OF SILICON MELT, AND DEVICE FOR PREVENTING CONTAMINATION OF SILICON MELT - A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon. | 09-06-2012 |
20090301385 | Method for producing silicon wafer - A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder ( | 12-10-2009 |
20090133617 | Single Crystal Semiconductor Manufacturing Apparatus and Manufacturing Method - An upper side heater | 05-28-2009 |
20090120352 | Semiconductor Single Crystal Manufacturing Device and Manufacturing Method - In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall | 05-14-2009 |
20090061140 | Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer - A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal | 03-05-2009 |