Nat Inst of Adv Industrial Sci and Tech Patent applications |
Patent application number | Title | Published |
20120097751 | CARBON DIOXIDE COATING METHOD AND DEVICE THEREFOR - The present invention provides a low environmental burden type coating method using carbon dioxide and a coating device therefor that carry out carbon dioxide coating in which carbon dioxide is substituted for all or a portion of a diluent solvent (thinner) used in organic solvent-based spray coating, the coating method being configured to prevent deposition of a polymer of a paint component that has entered as a result of backflow by preliminarily adding, to carbon dioxide, a true solvent component of the paint in at least an amount required for saturated solubility (20% to 50% per weight of carbon dioxide) to lower the dissolving power of carbon dioxide with respect to the true solvent component. According to the present invention, it is possible to provide a coating method and a device therefor capable of considerably reducing VOC generation, and a coating method and a device therefor capable of performing stable carbon dioxide coating of a one-liquid curing type or two-liquid curing type paint. | 04-26-2012 |
20100104805 | TRANSPARENT FILM - A transparent novel material/new technology realizing, in the technical field of packaging material, sealing material and display material, not only high thermostability but also excellence in flexibility, surface smoothness, dimensional stability and gas barrier properties. There is provided an inorganic layered compound film containing inorganic layered compound particles aligned and exhibiting high surface smoothness, high dimensional stability, high transparency, excellent flexibility, excellent gas barrier properties and high heat resistance, which inorganic layered compound film is obtained by first dispersing an inorganic layered compound of high transparency and a small amount of water-soluble polymer of high transparency in water or a liquid composed mainly of water to thereby obtain a homogeneous dispersion containing no agglomerates, and thereafter applying this dispersion onto a support with flat and water-repellent surface to thereby effect deposition of inorganic layered compound particles and separating the liquid as dispersion medium according to any of various solid liquid separating techniques, for example, centrifugal separation, filtration, vacuum drying, vacuum freeze drying, heating evaporation, etc. to thereby attain forming into a film, optionally followed by methods of drying/heating/cooling, etc. to thereby attain detachment from the support. | 04-29-2010 |
20100073988 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. | 03-25-2010 |
20100055502 | TUNNELING MAGNETORESISTIVE DEVICE - A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film. | 03-04-2010 |
20090277806 | ELECTROCHEMICAL CELL SYSTEM GAS SENSOR - The present invention is an electrochemical cell system gas sensor that detects a subject substance to be detected using an electrochemical reaction system and comprises an ion conduction phase and at least two kinds of electrode facing each other and contacting the ion conduction phase, an electrode structure thereof comprising a chemical detection electrode layer having a selective adsorption characteristic relative to the subject substance to be detected and at least one reference electrode layer serving as a counter electrode to the chemical detection electrode layer, a manufacturing method thereof, and a method of detecting the subject substance to be detected, the present invention provides a chemical detection system having an extremely high response speed and great detection ability irrespective of high or low temperatures and even in the presence of excessive oxygen that impairs the chemical reaction of the subject substance to be detected. | 11-12-2009 |
20090134465 | SEMICONDUCTOR STRUCTURE - A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited electrode layer is flat on a nanometer scale, enables a dielectric layer for electrical insulation to be coated without performing special planization after deposition of the electrode layer. Furthermore, another desired property for the metal gate electrode layer is that it has the similar etching workability to materials used in an ordinary semiconductor manufacturing process. Furthermore, another desired property for the metal gate electrode layer is that it has a structure in which diffusion of impurity is suppressed due to homogeneity thereof and the absence of grain boundaries. It was found that an amorphous metal electrode is most suitable for realizing the metal gate electrode layer satisfying the above-mentioned properties and thereby the present invention was achieved. | 05-28-2009 |
20090045060 | METHOD FOR ANALYZING PROTEIN - A method for analyzing proteins with the use of electrophoresis is provided, which makes it possible to rapidly and conveniently analyze a great variety of proteins with high sensitivity. The method for analyzing a protein in a sample comprises setting a sample in a carrier for electrophoresis, performing electrophoresis for the sample using a buffer for electrophoresis in which a labeling compound represented by formula I: | 02-19-2009 |
20080318355 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING THE SAME - There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As | 12-25-2008 |