II-VI INCORPORATED Patent applications |
Patent application number | Title | Published |
20160033359 | Edge Propagating Optical Time Domain Reflectometer And Method Of Using The Same - An OTDR system utilizes a laser source that is turned “on” and kept powered until its light reaches the end of the fiber span being measured (i.e., until the fiber span is fully illuminated). At any point in time after the fiber is fully illuminated, the laser source can be turned “off”. The return (reflected and backscattered) signal is directed into a photodetector of the OTDR, and is measured from the point in time when the fiber span starts to be illuminated. The measurements are made by sampling the return signal at predetermined time intervals—defined as the sampling rate. The created power samples are then subjected to post-processing in the form of a differentiation operation to create a conventional OTDR trace from the collected data. | 02-04-2016 |
20160025934 | Dual-Ganged Optical Switch - An optical switch is configured in a “dual-ganged” switch geometry to provide for the simultaneous switching of a selected transmit/receive pair of optical signal paths between a specific optical communication device and an optical communication network. A biaxially-symmetric signal redirection component may be used to direct the signals between the selected channel and the optical communication device. A specific waveguide (e.g., fiber) array topology within the dual-ganged switch (DGS) breaks the symmetry between the network transmit/receive arrays and a pair of transmit and receive signal paths associated with the communication device to improve isolation and minimize the possibility of cross-talk between non-selected waveguides in the transmit and receive arrays. The possibility of “hits” during switching between channels can be eliminated, and is controlled by dictating the process or switching steps used to rotate the biaxially-symmetric signal redirection element. | 01-28-2016 |
20150311668 | METHOD AND APPARATUS FOR DEPOLARIZING LIGHT - A light source assembly ( | 10-29-2015 |
20150309259 | Multiport Tunable Optical Filters - A tunable multiport optical filter includes various types of arrays of optical ports. The tunable filter also includes a light dispersion element (e.g., a grating) and a reflective beam steering element (e.g., a tilting mirror). An optical signal exits an optical (input) port, is dispersed by the light dispersion element, reflects off the reflective beam steering element back to the light dispersion element, and on to another optical (output) port. The reflective beam steering element can be steered such that a wavelength portion of the dispersed optical signal can be coupled to the optical output port. For example, the input optical signal may be a wavelength division multiplexed signal carrying multiple channels on different wavelengths, and the tunable multiport optical filter directs one of the channels to the output optical port. Additionally, the tunable filter may be incorporated into a device acting as a wavelength reference. | 10-29-2015 |
20150253217 | In-Service Optical Time Domain Reflectometry Utilizing Raman Pump Source - An arrangement for providing real-time, in-service OTDR measurements in an optical communication system utilizing distributed Raman amplification. One or more of the laser diodes used to provide the pump light necessary to create optical gain is modified to also generate short duration pulses that ride above or below the conventional pump light. These short duration pulses (which co-exist with the pump light within the optical fiber) are used in performing OTDR measurements, with a conventional processing system used to evaluate reflected pulses and create the actual OTDR measurements. | 09-10-2015 |
20150188285 | Method and Apparatus for Determining Optical Fibre Characteristics - An optical amplifier assembly for determining a parameter of an optical fibre configured to amplify an optical signal being propagated therethrough, the assembly comprising: at least one amplifier pump light source assembly configured to transmit light at a plurality of wavelengths into the optical fibre; a receiver configured to receive light that has propagated through at least part of the optical fibre; and a processor configured to determine the parameter of the optical fibre based on the received light. | 07-02-2015 |
20140273760 | Double-Sided Polishing of Hard Substrate Materials - Disclosed is a method and apparatus for simultaneously polishing both surfaces of an optical substrate. An upper platen and a lower platen, each covered with a polishing pad material and at least one carrier having an aperture for holding the optical substrate between the platens are provided. The location of the aperture of the carrier is set such that the center of the optical substrate is offset from the center of the carrier and at least a portion of the outer perimeter of the optical substrate extends outwardly beyond at least a portion of at least one of the outer perimeter and the inner perimeter of the platens. The platens are rotated with respect to the carrier, and the carrier is rotated with respect to the platens to polish the optical substrate. The location of the aperture of the carrier is adjustable. | 09-18-2014 |
20140265042 | 3D Direct Write Patterning Apparatus and Method of Generating Patterns on Doubly-Curved Surfaces - Disclosed is a system and method for patterning internal and/or external doubly-curved surfaces by use of a light source, three-dimensional scanning optics, computer controller, and a multi-axis robot. The system is capable of digitally receiving shape, location, and pattern data of a three-dimensional doubly-curved surface and applying said pattern over large areas with high precision in a seamless fashion. | 09-18-2014 |
20140234194 | Vanadium Doped SiC Single Crystals and Method Thereof - A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal. | 08-21-2014 |
20130309496 | "Method for Synthesizing Ultrahigh-Purity Silicon Carbide" - In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material. | 11-21-2013 |
20120285370 | SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS - In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal. | 11-15-2012 |
20120225004 | Halosilane Assisted PVT Growth of SiC - In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system. | 09-06-2012 |
20120103249 | SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS - A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal. | 05-03-2012 |
20110303884 | SiC Crystals Having Spatially Uniform Doping Impurities - A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule. | 12-15-2011 |
20110136287 | ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS - In a method of annealing a Cd | 06-09-2011 |
20100180814 | FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW - A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal. | 07-22-2010 |
20100061914 | GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE - In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal. | 03-11-2010 |
20100031877 | SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE - In a crystal growth method, a seed crystal | 02-11-2010 |
20100018455 | System for Forming SiC Crystals Having Spatially Uniform Doping Impurities - A physical vapor transport system includes a growth chamber charged with source material and a seed crystal in spaced relation, and at least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant. | 01-28-2010 |
20090302232 | MULTI-WINDOW SIGNAL PROCESSING ELECTRONICS ARCHITECTURE FOR PHOTON COUNTING WITH MULTI-ELEMENT SENSORS - A radiation detection and counting system ( | 12-10-2009 |
20090220788 | METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE - Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC. | 09-03-2009 |
20090169459 | Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth - In method of crystal growth, an interior of a crystal growth chamber ( | 07-02-2009 |
20090065701 | CdZnTe Device Using Constrained Design For High-Flux X-Ray Spectroscopic Imaging Applications - A CdZnTe photon counting detector includes a core material of Cd | 03-12-2009 |
20090014660 | COUNT UNIFORMITY CORRECTION IN FLUX SPACE FOR PIXILATED SEMICONDUCTING RADIATION DETECTORS - In operation of a photon counting detecting system ( | 01-15-2009 |
20080267353 | Energy Discriminating Scatter Imaging System - A specimen inspection system includes a photon source for outputting photons along a transmission path and a conveyor for translating a specimen completely through the transmission path. A radiation detector is positioned offset with respect to the transmission path for detecting photons that are scattered from the transmission path in response to interaction with the specimen passing therethrough. A controller determines from the detected scattered photons that a first material is present in the specimen. | 10-30-2008 |
20080261401 | Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxide or Ozonated Water Solutions in Combination with Colloidal Abrasive - A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate. | 10-23-2008 |
20080203514 | High Performance CdxZn1-xTe X-Ray and Gamma Ray Radiation Detector and Method of Manufacture Thereof - The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector. | 08-28-2008 |