JUSUNG ENGINEERING CO., LTD. Patent applications |
Patent application number | Title | Published |
20150337441 | APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE - Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid. | 11-26-2015 |
20150279619 | Substrate Tray and Substrate Processing Apparatus Including Same - Disclosed is a substrate tray which facilitates to realize a large size, and to prevent defects caused by sagging, and a substrate processing apparatus comprising the same, wherein the substrate tray may include a plurality of straps for supporting a plurality of substrates arranged in a first axis direction; and a support frame connected with the straps in a second axis direction being perpendicular to the first axis direction, wherein a length in each of the straps is larger than a length of the substrate with respect to the second axis direction. | 10-01-2015 |
20150235812 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD - Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter. | 08-20-2015 |
20150207018 | Apparatus and Method for Manufacturing of Thin Film Type Solar Cell - Disclosed is an apparatus and method for manufacturing a thin film type solar cell, which enables the enhancement of productivity, the apparatus for manufacturing a thin film type solar cell including a first electrode forming unit; a first separation part; an optoelectric conversion layer forming unit; a contact line forming unit; a printing unit; and an etching process unit, wherein the etching process unit removes the optoelectric conversion layer in a second separation part to expose the first electrode in the second separation part through a wet etching process. | 07-23-2015 |
20150140786 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD - Disclosed is an apparatus and method for processing substrate, which facilitates to prevent a substrate form being damaged, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting with the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part provided in the chamber lid, wherein the gas distributing part distributes source gas to a source gas distribution area on the substrate supporter, distributes reactant gas to a reactant gas distribution area which is separated from the source gas distribution area, and distributes purge gas to a space between the source gas distribution area and the reactant gas distribution area. | 05-21-2015 |
20140363587 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space. | 12-11-2014 |
20140349442 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell including a front electrode formed on a substrate; a semiconductor layer formed on the front electrode; a transparent conductive layer formed on the semiconductor layer; a rear electrode formed over the transparent conductive layer; and a buffer layer, formed between the transparent conductive layer and the rear electrode, for reducing an electric resistance of the rear electrode and enhancing an adhesive strength between the transparent conductive layer and the rear electrode. | 11-27-2014 |
20140252350 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a Thin Film Transistor (TFT) and a method of manufacturing the same. The TFT includes a gate electrode; a source electrode and a drain electrode spaced from the gate electrode in a vertical direction and spaced from each other in a horizontal direction; a gate insulation layer disposed between the gate electrode and the source and drain electrodes; and an active layer disposed between the gate insulation layer and the source and drain electrodes. The active layer is formed of a conductive oxide layer and comprises at least two layers having different conductivities according to an impurity doped into the conductive oxide layer. | 09-11-2014 |
20140166049 | CLEANING METHOD OF PROCESS CHAMBER - A cleaning method of a process chamber to remove a nitride layer including aluminum and a transition metal, which is adhered to an inner surface of the process chamber, includes removing the nitride layer by supplying cleaning gases to the process chamber, wherein the cleaning gases comprises a first gas including boron and a second gas including fluorine. | 06-19-2014 |
20140000519 | SUBSTRATE PROCESSING APPARATUS | 01-02-2014 |
20130233491 | DRY ETCHING APPARATUS - A dry etching apparatus is disclosed, which is capable of forming a uniform pattern in a substrate surface, the dry etching apparatus for etching at least one substrate through the use of plasma, comprising the at least one substrate placed on a tray inside a chamber; a susceptor, provided inside the chamber while confronting with the at least one substrate, for supplying a high-frequency power to form the plasma; a grounding part provided beneath the susceptor while being untouchable to the susceptor; and an insulating part provided between the susceptor and the grounding part. | 09-12-2013 |
20130143349 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a method of manufacturing a solar cell includes forming a first electrode over a substrate; forming a light-converting layer over the first electrode and patterning the light-converting layer to form a plurality of patterned light-converting layers that are spaced apart from each other; forming a transparent insulating layer over the first electrode including the patterned light-converting layers; and forming a second electrode over the transparent insulating layer. | 06-06-2013 |
20130036970 | Substrate Processing Apparatus - A substrate processing apparatus for deposition on a water seated therein is disclosed. The substrate processing apparatus includes a chamber having a reaction space, a lid provided on the chamber to selectively open or close the reaction space, a main disc accommodated in the chamber, on which at least one wafer is placed, and a drive device including a drive shaft to selectively rotate the main disc and a drive unit to drive the drive shaft. The drive shaft is separably coupled to the main disc to transmit drive force. When the lid is opened to expose the reaction space, the main disc is separated from the drive shaft and is discharged to the outside of the chamber in a state in which the wafer is placed thereon. | 02-14-2013 |
20130025661 | Thin Film Type Solar Cell and Method for Manufacturing the Same - A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of providing a wide light-transmission area without lowering cell efficiency and increasing processing time, so that the solar cell can be used as a substitute for a glass window in a building. The thin film type solar cell generally comprises a substrate; a plurality of front electrodes at fixed intervals on the substrate; a plurality of semiconductor layers at fixed intervals with a contact portion or separating channel interposed in-between, the plurality of semiconductor layers on the plurality of front electrodes; and a plurality of rear electrodes at fixed intervals by the each separating channel interposed in-between, the each rear electrode being electrically connected with the each front electrode; wherein the each rear electrode is patterned in such a way that a light-transmitting portion is included in a predetermined portion of the rear electrode. | 01-31-2013 |
20120129321 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR - A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber. | 05-24-2012 |
20120100710 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber. | 04-26-2012 |
20120091871 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF DISASSEMBLING AND ASSEMBLING THE SAME - A substrate processing apparatus includes: a chamber including a body having an open portion and a door for blocking the open portion; a substrate supporter connected to the door; and a door operating means including a rotation shaft for straightly moving and rotating the door, the door and the body separated in parallel from each other by straightly moving the door. | 04-19-2012 |
20120090785 | ANTENNA UNIT FOR GENERATING PLASMA AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second antenna including a second incoming portion and a plurality of second sub-antennas divided from the second incoming portion, the first and second incoming portions constituting a coaxial line. | 04-19-2012 |
20120040489 | METHOD, APPARATUS AND SYSTEM OF MANUFACTURING SOLAR CELL - A method of manufacturing a crystalline silicon solar cell includes steps of preparing a crystalline silicon substrate, texturing the substrate using plasma to form uneven patterns for increasing light absorption, doping ions in the substrate using plasma to form a doping layer for a PN junction, heating the substrate to activate the doped ions, forming an antireflection film on the doping layer, and forming front and back electrodes on front and back surfaces of the substrate, respectively. | 02-16-2012 |
20120000609 | POWER SUPPLYING MEANS HAVING SHIELDING MEANS FOR FEEDING LINE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field. | 01-05-2012 |
20110315432 | METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE PATTERN AND METHOD FOR MANUFACTURING ELECTRO-OPTIC DEVICE HAVING THE TRANSPARENT ELECTRODE PATTERN - Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent electrode on a light-transmissive substrate, patterning the transparent electrode by removing a portion of the transparent electrode, and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process. In accordance with the method, the insulating protective layer is formed in the edge region of the patterned transparent electrode through the printing process so that an apparatus and method for manufacturing the insulating protective layer can be simplified, resulting in a decrease in manufacturing cost. | 12-29-2011 |
20110315320 | GAS DISTRIBUTING DEVICE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface. | 12-29-2011 |
20110237023 | METHOD OF FABRICATING SOLAR CELL USING MICROWAVE AND APPARATUS FOR THE SAME - A method of fabricating a solar cell includes: forming a first electrode on a substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer; forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer, forming a second electrode over the second impurity-doped semiconductor layer; and irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon by crystallizing the first intrinsic semiconductor layer. | 09-29-2011 |
20110214812 | GAS DISTRIBUTING MEANS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means. | 09-08-2011 |
20110212604 | METHOD OF FABRICATING TRANSISTOR - A method of fabricating a transistor is provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer. | 09-01-2011 |
20110162684 | METHOD FOR MANUFACTURING THIN FILM TYPE SOLAR CELL, AND THIN FILM TYPE SOLAR CELL MADE BY THE METHOD - A method for manufacturing a thin film type solar cell and a thin film type solar cell manufactured by the method is disclosed. The method is comprised of a first process for forming a plurality of unit front electrode patterns at predetermined intervals on a substrate; a second process for forming a semiconductor layer pattern on the substrate, wherein the semiconductor layer pattern is comprised of a separating part to divide the solar cell into unit cells, and a contact part to connect the electrode patterns electrically; and a third process for forming a plurality of unit rear electrode patterns which are respectively connected with the unit front electrode patterns through the contact part, and are separated from one another by the separating part. | 07-07-2011 |
20110150608 | APPARATUS FOR TRANSFERRING A SUBSTRATE - In one embodiment, a transfer robot for transferring a substrate includes a supporting means, a transfer robot arm including a first sub-robot arm and a second sub-robot arm arranged over the supporting means, an inner rail and an outer rail adjacent to the inner rail overlying the supporting means. The first sub-robot arm is adapted to move in a straight line motion along the inner rail and the second sub-robot arm is adapted to move in a straight line motion along the outer rail. The second sub-robot arm surrounds the first sub-robot arm. | 06-23-2011 |
20110120375 | APPARATUS FOR PROCESSING SUBSTRATE - An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means. | 05-26-2011 |
20110117682 | APPARATUS AND METHOD FOR PLASMA PROCESSING - Disclosed is an apparatus and method for plasma processing, which facilitates to constantly control a RF voltage supplied to a substrate supporting member by precisely detecting an inductive RF voltage induced to the substrate supporting member for a plasma, the apparatus comprising: a substrate supporting member for supporting a substrate, installed in a reaction room of a processing chamber; a RF generator for supplying a RF voltage to the substrate supporting member so as to form plasma in the reaction room; and a matching device for matching impedance of the RF voltage to be supplied to the substrate supporting member from the RF generator, wherein the matching device comprises: a matching unit for matching the impedance of RF voltage; and an inductive RF detecting unit which an inductive RF detecting voltage by removing noise frequency elements except a waveform of the RF voltage from a waveform of an inductive RF voltage induced to the substrate supporting member, and supplies the detected inductive RF detecting voltage to the RF generator so as to control the RF voltage. | 05-19-2011 |
20110114130 | CLEANING METHOD OF PROCESS CHAMBER - A cleaning method of a process chamber to remove a nitride layer including aluminum and a transition metal, which is adhered to an inner surface of the process chamber, includes removing the nitride layer by supplying cleaning gases to the process chamber, wherein the cleaning gases comprises a first gas including boron and a second gas including fluorine. | 05-19-2011 |
20110079581 | PLASMA ETCHING APPARATUS - In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway. | 04-07-2011 |
20110061706 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME, AND THIN FILM TYPE SOLAR CELL MODULE AND POWER GENERATION SYSTEM USING THE SAME - A thin film type solar cell with a plurality of unit cells connected in series is disclosed, wherein uniform energy conversion efficiency is maintained in all of the unit cells by improving the energy conversion efficiency in the unit cell with the relatively-low energy conversion efficiency, to thereby realize the improved energy conversion efficiency, the thin film type solar cell comprising the plurality of unit cells, each unit cell including a front electrode, a semiconductor layer, and a rear electrode sequentially deposited on a substrate, wherein the thin film type solar cell includes a first unit cell set including at least one first unit cell with a first cell width, and a second unit cell set including at least one second unit cell with a second cell width which is different from the first cell width, wherein the first unit cell set occupies 80 to 95% of an entire area of the unit cells, and the second unit cell set occupies 5 to 20% of the entire area of the unit cells. | 03-17-2011 |
20110024527 | GAS INJECTOR AND APPARATUS INCLUDING THE SAME - A gas injector includes: a plate including at least one first injection hole; and at least one nozzle module combined with the plate, the at least one nozzle module including at least one second injection hole connected to the at least one first injection hole. | 02-03-2011 |
20100260589 | SUBSTRATE SUPPORTING MEANS HAVING WIRE AND APPARATUS USING THE SAME - An apparatus includes: a process chamber for treating a substrate; a susceptor in the process chamber; a supporting frame over the susceptor; and at least one wire connected to the supporting frame. | 10-14-2010 |
20100258159 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a substrate; front electrodes arranged at fixed intervals on the substrate by separating parts for dividing the solar cell into a plurality of unit cells, wherein each separating part is interposed between the front electrodes; semiconductor layer patterns arranged at fixed intervals on the front electrodes by the interposed separating parts; rear electrodes arranged at fixed intervals on the semiconductor layer patterns by the interposed separating parts; and auxiliary electrodes to electrically connect the front electrodes with the rear electrodes, in which the front electrode is electrically connected with the rear electrode through the use of auxiliary electrode, so that it is possible to minimize the laser-scribing procedure for dividing the solar cell into the plurality of unit cells, thereby preventing the particles from being generated. | 10-14-2010 |
20100252109 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, which can overcome various problems caused by a related art laser-scribing procedure since the thin film type solar cell is divided into a plurality of sub-cells through the use of auxiliary electrode or partition wall, the thin film type solar cell comprising a substrate; a front electrode layer and a cell-dividing part on the substrate; and a rear electrode on the semiconductor layer. | 10-07-2010 |
20100239395 | GATE VALVE AND SUBSTRATE-TREATING APPARATUS INCLUDING THE SAME - A substrate-treating apparatus includes: a plurality of modules disposed along a first direction, each of the plurality of modules having an inner space containable a substrate; a transfer unit transferring the substrate among the plurality of modules, the transfer unit including at least one track disposed along the first direction and at least one movable transfer chamber moving along the at least one track; and a gate valve fixed to each of the plurality of modules and combined with the at least one movable transfer chamber, wherein the at least one movable transfer chamber is atmospherically isolated from an exterior while moving. | 09-23-2010 |
20100215513 | VACUUM PUMPING SYSTEM, DRIVING METHOD THEREOF, APPARATUS HAVING THE SAME, AND METHOD OF TRANSFERRING SUBSTRATE USING THE SAME - An apparatus includes a transfer unit under an atmospheric condition and having a robot therein; and at least one process chamber connected to one side of the transfer unit with a slot valve there between, and being alternately under a vacuum condition and under an atmospheric condition. | 08-26-2010 |
20100212721 | THIN FILM TYPE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the thin film type solar cell is comprised of a substrate with lower and upper surfaces; a first solar cell on the upper surface of the substrate; and a second solar cell on the lower surface of the substrate, wherein a wavelength range of light absorbed into the first solar cell is different from a wave-length range of light absorbed into the second solar cell. In this case, there is no requirement for the tunneling between a first semiconductor layer of the first solar cell and a second semiconductor layer of the second solar cell, whereby the current matching is unnecessary. | 08-26-2010 |
20100200062 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell and a method for manufacturing the same is disclosed, wherein the solar cell comprises a first cell comprised of a semiconductor wafer with a PN structure; a second cell comprised of a thin film semiconductor layer with a PIN structure, formed on one surface of the first cell; a first electrode layer formed on one surface of the second cell; and a second electrode layer formed on the other surface of the first cell. Unlike the related art solar cell, the solar cell according to the present invention can absorb the light of long-wavelength range in the first cell, and the light of short-wavelength range in the second cell. As a result, it is possible for the solar cell according to the present invention to absorb the light of all ranges, thereby realizing the high efficiency of 20% or above. Also, the entire process time becomes shortened since there is no requirement for the procedure of forming the silicon thin film for a long period of time. | 08-12-2010 |
20100193022 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a solar cell and a method of manufacturing the same. The solar cell includes a transparent substrate. A first electrode and a transparent insulating layer are sequentially stacked over a plurality of first regions of the transparent substrate. A first electrode, a light-converting layer, a transparent insulating layer, and a second electrode are sequentially stacked over a second region of the transparent substrate other than the first regions. Therefore, light incident from the substrate can penetrate between the light-converting layers spaced apart from each other, thus manufacturing a transparent solar cell. Also, since light scattered by the transparent insulating layer is also incident into the side of the light-converting layer, the light-receiving area is not reduced and thus the efficiency of the solar cell can be increased. | 08-05-2010 |
20100159640 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber. | 06-24-2010 |
20100139562 | SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point. | 06-10-2010 |
20100136736 | METHOD FOR MANUFACTURING THIN FILM TYPE SOLAR CELL - A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH | 06-03-2010 |
20100132791 | HIGH EFFICIENCY SOLAR CELL, METHOD OF FABRICATING THE SAME AND APPARATUS FOR FABRICATING THE SAME - A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer. | 06-03-2010 |
20100132779 | SOLAR CELL AND METHOD OF FABRICATING THE SAME - A solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer. | 06-03-2010 |
20100132778 | SOLAR CELL, METHOD OF FABRICATING THE SAME AND APPARATUS FOR FABRICATING THE SAME - A method of fabricating a solar cell includes forming a first electrode on a transparent substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a light absorption layer on the first impurity-doped semiconductor layer and including a plurality of sub-layers, the plurality of sub-layers having stepwisely varying energy band gaps; forming a second impurity-doped semiconductor layer on the light absorption layer; and forming a second electrode on the second impurity-doped semiconductor layer. | 06-03-2010 |
20100103584 | ELECTROSTATIC CHUCKING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - An electrostatic chucking apparatus and a method for manufacturing the same is disclosed, which is capable of enabling the increase of lifetime of an electrostatic chuck and realizing a uniform temperature gradient in an entire substrate by preventing an insulating material from being etched, the electrostatic chucking apparatus comprising a base member; and an electrostatic chuck, loaded onto the base member, for chucking a substrate by an electrostatic force, wherein the electrostatic chuck comprises an insulating member formed on the base member and provided with a plurality of first insulating sheets of aluminum nitride; a heater for heating the substrate, the heater positioned among the plurality of first insulating sheets; a direct current electrode formed on at least one first insulating sheet provided above the heater among the plurality of first insulating sheets, the DC electrode electrically connected with a direct current power source; and an insulator etch stopping layer, formed of aluminum oxide on an entire surface of the insulating member, for preventing the insulating member from being etched. | 04-29-2010 |
20100101730 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft. | 04-29-2010 |
20100087030 | METHOD, APPARATUS AND SYSTEM OF MANUFACTURING SOLAR CELL - A method of manufacturing a crystalline silicon solar cell includes steps of preparing a crystalline silicon substrate, texturing the substrate using plasma to form uneven patterns for increasing light absorption, doping ions in the substrate using plasma to form a doping layer for a PN junction, heating the substrate to activate the doped ions, forming an antireflection film on the doping layer, and forming front and back electrodes on front and back surfaces of the substrate, respectively. | 04-08-2010 |
20100071624 | SUBSTRATE SUPPORT FRAME, AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME AND METHOD OF LOADING AND UNLOADING SUBSTRATE USING THE SAME - A substrate support frame for loading or unloading a substrate on or from a susceptor in a chamber, wherein the substrate support frame is disposed over the susceptor, comprises a body supporting a boundary portion of the substrate; a first opening through a center portion of the body and exposing a center portion of the susceptor; and a second opening corresponding to one side of the body, wherein the substrate is disposed on the body through the second opening to overlap the center portion of the susceptor. | 03-25-2010 |
20100059182 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber. | 03-11-2010 |
20100031886 | METHOD OF GAP-FILLING USING AMPLITUDE MODULATION RADIOFREQUENCY POWER AND APPARATUS FOR THE SAME - A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin film into a gap by applying a first bias power to the susceptor, an amplitude of the first bias power being periodically modulated; stopping supply of the process gas and cutting off the first bias power; and extinguish the plasmas in the chamber. | 02-11-2010 |
20100006539 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR - A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber. | 01-14-2010 |
20100006031 | GAS DISTRIBUTION PLATE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path. | 01-14-2010 |
20090317215 | VACUUM CHAMBER FOR PROCESSING SUBSTRATE AND APPARATUS INCLUDING THE SAME - A vacuum chamber for processing a substrate includes: a chamber body; and a chamber lid combined with the chamber body, wherein the chamber lid comprises: a frame having a plurality of openings; and a plurality of plates combined with the plurality of openings. | 12-24-2009 |
20090294157 | ELECTRO-OPTIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - An electro-optic device includes a substrate a metal thin film pattern formed on the substrate, and a transparent electrode pattern formed to cover the metal thin film pattern, wherein one side of the metal thin film pattern is formed to be exposed to the outside of the transparent electrode pattern. | 12-03-2009 |
20090288600 | APPARATUS FOR SUPPLYING SOURCE AND APPARATUS FOR DEPOSITION THIN FILM HAVING THE SAME - The present invention provides an apparatus for supplying a source and an apparatus for depositing a thin film having the same. The apparatus for supplying a source includes a horizontal channel extending in one direction; pumping and transfer ports extending to pass through the horizontal channel, the pumping and transfer ports being spaced apart from each other; a transfer shaft inserted into the horizontal channel to reciprocate therein; and a storage room connected to one side of the pumping port, the storage room storing and supplying a powder source, wherein the transfer shaft comprises at least one transfer hole for allowing the powder source supplied through the pumping port to be filled therein and to be transferred to an external apparatus through the transfer port. As described above, according to the present invention, a powder source filled in a transfer hole is supplied to an external apparatus by reciprocating a transfer shaft, so that the amount of the powder source supplied to the external apparatus can be quantitatively controlled as much as a fixed quantity corresponding to the internal volume of the transfer hole. | 11-26-2009 |
20090286403 | METHOD OF FORMING THIN FILM PATTERN FOR SEMICONDUCTOR DEVICE AND APPARATUS FOR THE SAME - A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern. | 11-19-2009 |
20090242025 | Thin film type solar cell, and method for manufacturing the same - A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the thin film type solar cell comprises a substrate; a plurality of front electrodes formed on the substrate at fixed intervals by each first separating channel interposed in-between; a semiconductor layer formed on the front electrodes, the semiconductor layer having a contact portion therein; and a plurality of rear electrodes formed at fixed intervals by each second separating channel interposed in-between, and electrically connected with the front electrode through the contact portion, wherein the rear electrode is comprised of a first rear electrode and a plurality of second rear electrodes branching from the first rear electrode, wherein the first rear electrode is formed along a first direction, and the plurality of second rear electrodes extend from the first rear electrode and are arranged at a second direction which is different from the first direction, so that it is possible to obtain a predetermined visible range by transmitting the solar ray through the portion between each of the second rear electrodes. | 10-01-2009 |
20090170036 | METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE PATTERN AND METHOD FOR MANUFACTURING ELECTRO-OPTIC DEVICE HAVING THE TRANSPARENT ELECTRODE PATTERN - Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent electrode on a light-transmissive substrate, patterning the transparent electrode by removing a portion of the transparent electrode, and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process. In accordance with the method, the insulating protective layer is formed in the edge region of the patterned transparent electrode through the printing process so that an apparatus and method for manufacturing the insulating protective layer can be simplified, resulting in a decrease in manufacturing cost. | 07-02-2009 |
20090167169 | ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided are an organic light emitting diode (OLED) and a method for manufacturing the same. The method for manufacturing the OLED includes forming a first electrode on a substrate using a metal paste, forming an organic thin film on the first electrode, and depositing a second electrode on the organic thin film. Herein, the second electrode includes a transparent conductive oxide. | 07-02-2009 |
20090165956 | ELECTROSTATIC CHUCK AND APPARATUS FOR TREATING SUBSTRATE INCLUDING THE SAME - An electrostatic chuck for an apparatus for treating a substrate includes a body; an insulating plate attached onto a top surface of the body, wherein the substrate is disposed on the insulating plate; an electrode in the insulating plate; a temperature controlling unit including a heating unit and a cooling unit under the electrode and in the insulating plate; and a thermal conduction unit disposed between the electrode and the temperature controlling unit. | 07-02-2009 |
20090165722 | APPARATUS FOR TREATING SUBSTRATE - An apparatus for treating a substrate includes: a chamber including an upper lid; a rear plate in the chamber; a gas distributing plate under the rear plate, the gas distributing plate including a plurality of injection holes, the gas distributing plate combined with the upper lid using a plurality of first coupling means; and a substrate holder under the gas distributing plate, the substrate holder having the substrate thereon. | 07-02-2009 |
20090165718 | GAS INJECTOR AND FILM DEPOSITION APPARATUS HAVING THE SAME - Provided are a gas injector and a film deposition apparatus having the same. The gas injector includes a body, a supply hole, an injection hole, and a distribution plate. The body is configured to provide an inner space therein. The supply hole is formed in an upper surface of the body to communicate with the inner space and receive a raw material. The injection hole is formed in a lower surface of the body to communicate with the inner space and inject the raw material. The distribution plate is disposed in the inner space of the body. A through hole is formed in the distribution plate. The distribution plate is disposed to be inclined at a predetermined angle with respect to a horizontal plane. The gas injector can uniformly inject the raw material and improve vaporization efficiency of the raw material having a powder form. | 07-02-2009 |
20090165717 | GAS INJECTION UNIT AND THIN FILM DEPOSITION APPARATUS HAVING THE SAME - A gas injection unit and a thin film deposition apparatus having the gas injection unit are provided. Since a variety of different kinds of organic materials can be sequentially vaporized and injected by a single injection unit, a variety of different kinds of thin films can be deposited in a single chamber. Furthermore, the gas injection structure of the injector unit can be easily controlled. Therefore, even when the process conditions such as the size of the substrate, the process temperature of the chamber, and the like are altered, it becomes possible to actively response to the altered process conditions by simply replacing some parts without replacing the whole injector unit. | 07-02-2009 |
20090161216 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a display device including a fluid buffer layer and a method for manufacturing the same. The display device includes a display device layer, a passivation layer, an encapsulation layer, and a fluid buffer layer. The display device layer is disposed on one surface of a substrate. The passivation layer is disposed on the display device layer. The encapsulation layer has a cup-shaped internal space to protect the display device layer. The fluid buffer layer is formed on at least one of the top and the side of the passivation layer formed on the display device layer. Because the fluid buffer layer is formed on the display device layer, oxygen and moisture are prevented from flowing into the display device layer, thus suppressing the device lifetime reduction. Also, an external physical impact is absorbed by the fluid buffer layer, thus minimizing the damage to the display device. | 06-25-2009 |
20090145358 | DEPOSITION MATERIAL SUPPLYING MODULE AND THIN FILM DEPOSITION SYSTEM HAVING THE SAME - A deposition material supplying module includes a canister configured to define a storage space in which a deposition material is stored, a material flow controller provided with at least one groove receiving the deposition material supplied from the canister and adapted to rotate, and a carrier gas supplying unit configured to supply carrier gas to the material flow controller. The deposition material is filled in the groove and a fixed amount of the deposition material is supplied into the process chamber using the deposition material flow controller. Therefore, it is easy to control an amount of the deposition material supplied to the process chamber and the reliability on the fixed-quantity supply can be improved. | 06-11-2009 |
20090108308 | TRANSISTOR AND METHOD OF FABRICATING THE SAME - A transistor and a method of fabricating the same are provided. The transistor includes a SiGe epitaxial layer formed in a recess region of a substrate at both side of a gate electrode and a SiGe capping layer formed on the SiGe epitaxial layer. The transistor further includes a SiGe seed layer formed under the SiGe epitaxial layer and a silicon capping layer formed on the SiGe capping layer. | 04-30-2009 |
20090017603 | METHOD OF FORMING EPITAXIAL LAYER - A method of forming an epitaxial layer on a silicon substrate includes (a) providing a silicon substrate; (b) performing a wet-cleaning process onto the silicon substrate; (c) performing a first plasma cleaning process onto the wet-cleaned silicon substrate by providing a chlorine (Cl | 01-15-2009 |