Rohm Co., Ltd. Patent applications |
Patent application number | Title | Published |
20160141356 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first conductivity type semiconductor substrate; and a plurality of second conductivity type semiconductor regions, the respective second conductivity type semiconductor regions being embedded in a plurality of stripe shaped trenches formed in the semiconductor substrate so that the respective second conductivity type semiconductor regions are extended in the row direction or the column direction in parallel with a first principal surface of the semiconductor substrate and are spaced in a fixed gap mutually. The semiconductor substrate and the plurality of the semiconductor regions are depleted by a depletion layer extended in the direction in parallel to the first principal surface from a plurality of pn junction interfaces, and the respective pn junction interfaces are formed between the semiconductor substrate and the plurality of the semiconductor regions. | 05-19-2016 |
20160135262 | Load Driving Device, and Lighting Apparatus and Liquid Crystal Display Device Using the Same - A load driving device disclosed in the specification includes a power supply circuit for supplying to a load an output voltage converted from an input voltage, a detection voltage generation circuit for generating a detection voltage which varies depending on a magnitude of a voltage drop which across the load, and a control circuit for controlling the power supply circuit so that it performs output feedback control of the output voltage, on the basis of the detection voltage. | 05-12-2016 |
20160133743 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film. | 05-12-2016 |
20160133742 | SEMICONDUCTOR DEVICE HAVING TRENCH GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a semiconductor layer in which a gate trench is formed, a gate insulating film formed along an inner surface of the gate trench, a gate electrode that is buried in the gate trench through the gate insulating film and that has a lower electrode and an upper electrode that are separated upwardly and downwardly from each other with an intermediate insulating film between the lower electrode and the upper electrode, and a gate contact that is formed in the gate trench so as to pass through the upper electrode and through the intermediate insulating film and so as to reach the lower electrode and that electrically connects the lower electrode and the upper electrode together. | 05-12-2016 |
20160133609 | ELECTRONIC CIRCUIT - A semiconductor device includes a first chip including a PN junction diode, and a second chip including a Schottky barrier diode, connected in parallel to the first chip. A first inductive metal member has a first end connected to a cathode of the PN junction diode, and a second end connected to a cathode of the Schottky barrier diode. A second inductive metal member has a third end connected to the cathode of the Schottky barrier diode. An output line is connected to a fourth end of the second connection member, and electrically connected to the cathode of the PN junction diode via a first path formed by the first and second metal members, and to the cathode of the Schottky barrier diode via a second path formed by the second metal member and exclusive of the first metal member, so that the first path has greater inductance than the second. | 05-12-2016 |
20160133592 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device according to the present invention includes a semiconductor substrate, a pad formed on the semiconductor substrate, a rewiring that is electrically connected to the pad and led to a region outside the pad, a resin layer formed on the rewiring, and an external terminal electrically connected to the rewiring via the resin layer, and the resin layer is formed so as to enter the inside of a slit formed in a region along the periphery of the external terminal in the rewiring. | 05-12-2016 |
20160121610 | INKJET APPARATUS AND MANUFACTURING METHOD OF INKJET APPARATUS - An inkjet apparatus capable of achieving a good withstand voltage in a movable part of a piezoelectric element is provided. An inkjet apparatus ( | 05-05-2016 |
20160111365 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line. | 04-21-2016 |
20160099377 | LIGHT-EMITTING ELEMENT - A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element | 04-07-2016 |
20160087046 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. | 03-24-2016 |
20160087027 | CHIP RESISTOR AND ELECTRONIC EQUIPMENT HAVING RESISTANCE CIRCUIT NETWORK - A compact and refined chip resistor, with which a plurality of types of required resistance values can be accommodated readily with the same design structure, was desired. The chip resistor is arranged to have a resistor network on a substrate. The resistor network includes a plurality of resistor bodies arrayed in a matrix and having an equal resistance value. A plurality of types of resistance units are respectively arranged by one or a plurality of the resistor bodies being connected electrically. The plurality of types of resistance units are connected in a predetermined mode using connection conductor films and fuse films. By selectively fusing a fuse film, a resistance unit can be electrically incorporated into the resistor network or electrically separated from the resistor network to make the resistance value of the resistor network the required resistance value. | 03-24-2016 |
20160086941 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n | 03-24-2016 |
20160072039 | DEVICE USING A PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An inkjet printing head 1 includes a pressure chamber (cavity) | 03-10-2016 |
20160072006 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE - A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm. | 03-10-2016 |
20160071798 | Semiconductor Device - A semiconductor device including a multiplicity of large current power elements with each power element divided into a multiplicity of divisional elements and arranged such that the power elements belonging to different power elements are arranged in a repetitive sequential order. The IC chip of the semiconductor device is formed to have output wires extending from the respective divisional elements connected to corresponding output pads without crossing other output wires. Arranged on the IC chip are output bumps in association with the respective output pads. A rewiring layer is provided having output coupling wires for connecting together the bumps that belong to the same power element and connecting them further to an external output electrode. | 03-10-2016 |
20160064902 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. | 03-03-2016 |
20160064542 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a stripe shape between a plurality of the stripe shaped source regions on the semiconductor substrate, an insulating film for covering the source regions and the gate electrodes, the insulating film including a contact hole for partly exposing the source regions in a part of a predetermined region with respect to a longitudinal direction of the source regions; and a source electrode formed on the insulating film and electrically connected to the source region via the contact hole. | 03-03-2016 |
20160064488 | NITRIDE BASED SEMICONDUCTOR DEVICE - A nitride based semiconductor device includes: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer including an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer including a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer including an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. There can be provided a nitride based semiconductor device capable of reducing a leakage current and improving breakdown capability. | 03-03-2016 |
20160056332 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer. | 02-25-2016 |
20160050760 | COMPOSITE CHIP COMPONENT, CIRCUIT ASSEMBLY AND ELECTRONIC APPARATUS - The composite chip component includes: plurality of chip elements which are disposed so as to be mutually spaced apart upon a common substrate, and which have mutually different functions; and a pair of electrodes which, in each of the chip elements, are formed on the surface of the substrate. As a result, it is possible to reduce the bond area (footprint) for the mounting substrate, and therefore, it is possible to provide a composite chip component capable of achieving efficiency of mounting operation. | 02-18-2016 |
20160043299 | DEVICE USING A PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An inkjet printing head | 02-11-2016 |
20160043167 | SEMICONDUCTOR DEVICE HAVING A BREAKDOWN VOLTAGE HOLDING REGION - A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region. | 02-11-2016 |
20160035885 | N-CHANNEL DOUBLE DIFFUSION MOS TRANSISTOR, AND SEMICONDUCTOR COMPOSITE DEVICE - A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer. | 02-04-2016 |
20160035824 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE - A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer. | 02-04-2016 |
20160027988 | PIEZOELECTRIC MEMBRANE, PIEZOELECTRIC DEVICE, AND INKJET HEAD - An inkjet head includes a substrate that defines a cavity in which ink is stored, a vibrating membrane that is supported by the substrate and that defines the cavity, and a piezoelectric device that is disposed on the vibrating membrane and that changes a volume of the cavity by displacing the vibrating membrane. The piezoelectric device includes a lower electrode, a piezoelectric membrane that is disposed on the lower electrode, and an upper electrode that is disposed on the piezoelectric membrane and that faces the lower electrode with the piezoelectric membrane interposed between the upper electrode and the lower electrode. The piezoelectric membrane includes a columnar structure layer and an amorphous structure layer of a piezoelectric material. The amorphous structure layer is stacked contiguously with the columnar structure layer. | 01-28-2016 |
20160027756 | SEMICONDUCTOR DEVICE - A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device ( | 01-28-2016 |
20160027690 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer. | 01-28-2016 |
20160005929 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE - In a light-emitting element | 01-07-2016 |
20150380670 | ORGANIC THIN FILM PHOTOVOLTAIC DEVICE, FABRICATION METHOD THEREOF, AND ELECTRONIC APPARATUS - An organic thin film photovoltaic device ( | 12-31-2015 |
20150380484 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 12-31-2015 |
20150380372 | SEMICONDUCTOR DEVICE INCLUDING A PROTECTIVE FILM - A semiconductor device includes a semiconductor chip having a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire. A resin layer is stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening. A pad is formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion. | 12-31-2015 |
20150377823 | LIMITING-CURRENT TYPE GAS SENSOR, FABRICATION METHOD OF THE LIMITING-CURRENT TYPE GAS SENSOR AND SENSOR NETWORK SYSTEM - A limiting-current type gas sensor includes: an Si substrate ( | 12-31-2015 |
20150372154 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V | 12-24-2015 |
20150371983 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE - A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device | 12-24-2015 |
20150371937 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device having a structure capable of reducing the self-inductance of internal wiring. The semiconductor device includes: a lower board having a lower conductor layer formed on the surface thereof; a switching element bonded to the lower conductor layer in an element bonding area; a terminal bonded to the lower conductor layer in a terminal bonding area; an upper board stacked on the lower board in a board bonding area between the element bonding area and the terminal bonding area, and having an upper conductor layer on the surface thereof; and a switching element connecting member which connects the switching element with the upper conductor layer. | 12-24-2015 |
20150349057 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift region; a second conductivity type first breakdown voltage holding region; a source trench passing through the first conductivity type source region and the second conductivity type body region from the front surface and reaching a drain region; and a second conductivity type second breakdown voltage region selectively formed on an edge portion of the source trench where the sidewall and the bottom wall thereof intersect with each other in a parallel region of the source trench. | 12-03-2015 |
20150348900 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line. | 12-03-2015 |
20150348862 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER - A semiconductor device ( | 12-03-2015 |
20150340840 | SEMICONDUCTOR LASER - Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate ( | 11-26-2015 |
20150340492 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p | 11-26-2015 |
20150333137 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the present invention includes a semiconductor layer provided with a gate trench, a first conductivity type source region formed to be exposed on a surface side of the semiconductor layer, a second conductivity type channel region formed on a side of the source region closer to a back surface of the semiconductor layer to be in contact with the source region, a first conductivity type drain region formed on a side of the channel region closer to the back surface of the semiconductor layer to be in contact with the channel region, a gate insulating film formed on an inner surface of the gate trench, and a gate electrode embedded inside the gate insulating film in the gate trench, while the channel region includes a channel portion formed along the side surface of the gate trench so that a channel is formed in operation and a projection projecting from an end portion of the channel portion closer to the back surface of the semiconductor layer toward the back surface. | 11-19-2015 |
20150332842 | CHIP PARTS - A chip part is provided that includes a substrate | 11-19-2015 |
20150331066 | MEMS SENSOR, METHOD FOR MANUFACTURING THE SAME, AND MEMS PACKAGE INCLUDING THE SAME - A MEMS sensor according to the present invention includes a base substrate including a displaceably supported movable portion and a lid substrate covering the movable portion and functioning as a magnetic sensor that detects magnetism by making use of the Hall effect. | 11-19-2015 |
20150325571 | SWITCHING DEVICE - A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path. | 11-12-2015 |
20150325558 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell. | 11-12-2015 |
20150318440 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNS - A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | 11-05-2015 |
20150311278 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. | 10-29-2015 |
20150311165 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 10-29-2015 |
20150305159 | CHIP CAPACITOR, CIRCUIT ASSEMBLY, AND ELECTRONIC DEVICE - A chip capacitor according to the present invention includes a substrate, a pair of external electrodes formed on the substrate, a capacitor element connected between the pair of external electrodes, and a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element. Also, a circuit assembly according to the present invention includes the chip capacitor according to the present invention and a mounting substrate having lands, soldered to the external electrodes, on a mounting surface facing a front surface of the substrate. | 10-22-2015 |
20150303330 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction. | 10-22-2015 |
20150295071 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region. | 10-15-2015 |
20150287678 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a lower wiring layer made of a conductive material; an upper wiring layer formed in an upper layer than the lower wiring layer; and a fuse film, at least a portion of the fuse film being formed in a plug formation layer in which a plug for connecting the lower wiring layer and the upper wiring layer is formed, and made of a conductive material including a metallic material other than copper. | 10-08-2015 |
20150280016 | DISCRETE CAPACITOR AND MANUFACTURING METHOD THEREOF - A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface portion of the substrate, an oxide film formed on the substrate and having a first opening to selectively expose the impurity diffusion layer, a dielectric film formed on the impurity region having been exposed from the oxide film, and a first electrode opposed to the impurity diffusion layer with the dielectric film therebetween, wherein the impurity concentration on the front surface portion of the impurity diffusion layer is 5×10 | 10-01-2015 |
20150279932 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE - A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer. | 10-01-2015 |
20150279848 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second conductivity type, which are a pair of regions formed in the active region, for providing a channel region of a first conductivity type for a region therebetween, and a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the projecting portion in a manner not overlapping the projecting portion, in which an aspect ratio of the buried film is 2.3 to 3.67. | 10-01-2015 |
20150270472 | DEVICE USING A PIEZOELECTRIC FILM - An inkjet printing head | 09-24-2015 |
20150270461 | LIGHT EMITTING ELEMENT UNIT AND METHOD FOR MANUFACTURING THE SAME, LIGHT EMITTING ELEMENT PACKAGE AND ILLUMINATING DEVICE - A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount. | 09-24-2015 |
20150270386 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device has a source region, a channel region, and a drain region disposed in order from the surface of the device in the thickness direction of a semiconductor substrate. The semiconductor device includes a source metal embedded in a source contact groove penetrating the source region and reaching the channel region, a gate insulating film formed on the side wall of a gate trench that is formed so as to penetrate the source region and the channel and reach the drain region, a polysilicon gate embedded in the gate trench so that at least a region facing the channel region in the gate insulating film is covered with the polysilicon gate and so that all of the polysilicon gate is placed under a surface of the source region, and a gate metal that is embedded in a gate contact groove formed in the polysilicon gate so as to reach the depth of the channel region and that is in contact with the polysilicon gate. | 09-24-2015 |
20150255628 | BIDIRECTIONAL ZENER DIODE - A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode. | 09-10-2015 |
20150255379 | SEMICONDUCTOR DEVICE WITH LEAD TERMINALS HAVING PORTIONS THEREOF EXTENDING OBLIQUELY - A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting portion. Each of the lead terminal portions adjacent to the hanging lead portion is a chamfered lead terminal portion having, at its head, a chamfered portion formed substantially in parallel with the hanging lead portion so as to avoid interference with the hanging lead portion. | 09-10-2015 |
20150249055 | CHIP DIODE AND DIODE PACKAGE - [Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode. | 09-03-2015 |
20150243612 | CHIP PARTS AND METHOD FOR MANUFACTURING THE SAME, CIRCUIT ASSEMBLY HAVING THE CHIP PARTS AND ELECTRONIC DEVICE - A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes. | 08-27-2015 |
20150243412 | CHIP COMPONENT AND PRODUCTION METHOD THEREFOR - A chip part according to the present invention includes a substrate having a front surface and a side surface, an electrode integrally formed on the front surface and the side surface so as to cover an edge portion of the front surface of the substrate, and an insulating film interposed between the electrode and the substrate. A circuit assembly according to the present invention includes the chip part according to the present invention and a mounting substrate having a land, bonded by solder to the electrode, on a mounting surface facing the front surface of the substrate. | 08-27-2015 |
20150241630 | DIRECTIONAL COUPLER, AND MULTIPLEXER AND DEMULTIPLEXER - The directional coupler includes: lattice points periodically arranged in the 2D-PC slab and configured to diffract optical waves, THz waves, or millimeter waves in PBG frequencies in PBG structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC slab; a first 2D-PC waveguide formed of a line defect; a second 2D-PC waveguide which can be mode-coupled to the first waveguide; a directional coupling unit disposed between the first waveguide and the second waveguide in two rows, and having lattice points between waveguides of which the radius is smaller than that of the lattice points, wherein in order to match the first waveguide with an operational band at a side of an input port from the directional coupling unit, the width of the second waveguide is narrowed so that the whole dispersion curve of the directional coupling unit is moved to a higher-frequency side. | 08-27-2015 |
20150228809 | SCHOTTKY BARRIER DIODE - A Schottky metal | 08-13-2015 |
20150228806 | CHIP DIODE AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a chip diode with a Zener voltage Vz of 4.0 V to 5.5 V, including a semiconductor substrate having a resistivity of 3 mΩ·cm to 5 mΩ·cm and a diffusion layer formed on a surface of the semiconductor substrate and defining a diode junction region with the semiconductor substrate therebetween, in which the diffusion layer has a depth of 0.01 μm to 0.2 μm from the surface of the semiconductor substrate. | 08-13-2015 |
20150228784 | SUPERJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device that includes the following is manufactured: an n | 08-13-2015 |
20150228575 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip, a wiring on the chip, an insulating film coating the wiring and having an opening partially exposing the wiring, a Ti/W film on a portion of the wiring facing the opening, a Cu layer on the Ti/W film and the wiring's exposed portion, and having a peripheral edge protruding away from the opening more than Ti/W film's peripheral edge in parallel to an insulating film surface, and a solder ball bonded to the Cu layer. The protrusion of the Cu layer's peripheral edge with respect to the Ti/W film's peripheral edge is greater than the Ti/W film's thickness. The Ti/W film's surface doesn't vertically surpass the Cu layer's upper surface in the opening's center. A Cu layer/solder ball interface is arc-shaped on both sides of the Cu layer's upper surface in a cross section taken perpendicularly to the Cu layer's upper surface. | 08-13-2015 |
20150228565 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a resin package, a semiconductor chip sealed in the resin package, and having first and second pads on a front surface, a lead integrated island sealed in the resin package, to one surface of which a back surface of the semiconductor chip is bonded, and the other surface of an opposite side to the one surface of which is partially exposed from a bottom surface of the resin package as a first pad connecting terminal for electrical connection between the first pad and outside and a back connecting terminal for electrical connection between the back surface of the semiconductor chip and outside separately from each other, and a lead formed separately from the lead integrated island, sealed in the resin package, one surface of which is connected with the second pad by a wire, and the other surface of an opposite side to the one surface of which is exposed from a bottom surface of the resin package as a second pad connecting terminal for electrical connection between the second pad and outside, and the semiconductor chip is, on the one surface of the lead integrated island, disposed at a position one-sided to the first pad connecting terminal side, and the first pad and the one surface of the lead integrated island are connected by a wire. | 08-13-2015 |
20150228564 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a resin package, a semiconductor chip sealed in the resin package, and having first and second pads on a front surface, a lead integrated island sealed in the resin package, to one surface of which a back surface of the semiconductor chip is bonded, and the other surface of an opposite side to the one surface of which is partially exposed from a bottom surface of the resin package as a first pad connecting terminal for electrical connection between the first pad and outside and a back connecting terminal for electrical connection between the back surface of the semiconductor chip and outside separately from each other, and a lead formed separately from the lead integrated island, sealed in the resin package, one surface of which is connected with the second pad by a wire, and the other surface of an opposite side to the one surface of which is exposed from a bottom surface of the resin package as a second pad connecting terminal for electrical connection between the second pad and outside, and the semiconductor chip is, on the one surface of the lead integrated island, disposed at a position one-sided to the first pad connecting terminal side, and the first pad and the one surface of the lead integrated island are connected by a wire. | 08-13-2015 |
20150221763 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film. | 08-06-2015 |
20150216044 | CHIP PARTS AND METHOD FOR MANUFACTURING THE SAME, CIRCUIT ASSEMBLY HAVING THE CHIP PARTS AND ELECTRONIC DEVICE - The chip part of the present invention includes a substrate, an electrode on the substrate and having a front surface in which a plurality of recessed portions are formed toward the thickness direction thereof, and an element region having a circuit element that is electrically connected to the electrode. | 07-30-2015 |
20150214428 | LIGHT EMITTING DEVICE - The light emitting device | 07-30-2015 |
20150214294 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten. | 07-30-2015 |
20150214259 | PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING THE SAME - A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%. | 07-30-2015 |
20150200181 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film. | 07-16-2015 |
20150194492 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film. | 07-09-2015 |
20150187906 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 07-02-2015 |
20150179554 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device has a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead disposed around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package sealing the semiconductor chip, the island, the lead, and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof. | 06-25-2015 |
20150162396 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first etching stopper film and a second etching stopper film that are formed to be spaced apart from one another on a first inter-layer insulating film; a metal thin film resistor formed to extend over the first and second etching stopper films; a second inter-layer insulating film formed on the first inter-layer insulating film to cover the first and second etching stopper films and the metal thin film resistor; a first contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the first etching stopper film by penetrating through the metal thin film resistor; and a second contact hole formed in the second inter-layer insulating film to extend from a surface of the second inter-layer insulating film onto the second etching stopper film by penetrating through the metal thin film resistor. | 06-11-2015 |
20150138773 | LIGHTING DEVICE - A lighting device includes a substrate and a planar light source portion including a plurality of LED chips arrayed on the substrate. The planar light source portion faces an illumination space (space to be illuminated) by a predetermined opening area. The plurality of LED chips are arrayed on the substrate such that the mounting density with respect to the opening area is not less than 3/cm | 05-21-2015 |
20150137358 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - A semiconductor device according to the present invention includes: a combination object; and a chip having a front surface opposed to a front surface of the combination object. The chip includes: a multi-level wiring structure provided in the front surface of the chip; a connection electrode provided in the multi-level wiring structure and electrically connected to the combination object; an alignment mark set provided in the multi-level wiring structure and electrically isolated from the connection electrode; and an electrically conductive film provided at a higher level than the alignment mark set in association with the multi-level wiring structure to cover the alignment mark set and electrically isolated from the connection electrode. | 05-21-2015 |
20150137357 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - An inventive semiconductor device includes: a first semiconductor chip; a second semiconductor chip having a front surface opposed to a front surface of the first semiconductor chip; a first electrode region including a first electrode provided between the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip to the second semiconductor chip; and a juncture portion provided between the first semiconductor chip and the second semiconductor chip as surrounding the first electrode region to connect the first semiconductor chip to the second semiconductor chip. | 05-21-2015 |
20150137314 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member. | 05-21-2015 |
20150129896 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm. | 05-14-2015 |
20150123691 | METHOD FOR MANUFACTURING PROBE CARD, PROBE CARD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING PROBE - Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board. | 05-07-2015 |
20150091169 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 04-02-2015 |
20150091164 | SEMICONDUCTOR DEVICE - An inventive semiconductor device includes: a semiconductor chip including an integrated circuit; a plurality of electrode pads provided on the semiconductor chip and connected to the integrated circuit; a rewiring to which the electrode pads are electrically connected together, the rewiring being exposed on an outermost surface of the semiconductor chip and having an exposed surface area greater than the total area of the electrode pads; and a resin package which seals the semiconductor chip. | 04-02-2015 |
20150087122 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p | 03-26-2015 |
20150085890 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. | 03-26-2015 |
20150061145 | SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer. | 03-05-2015 |
20150060937 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n | 03-05-2015 |
20150054128 | SEMICONDUCTOR DEVICE INCLUDING AN ELECTRODE LOWER LAYER AND AN ELECTRODE UPPER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized. | 02-26-2015 |
20150042440 | MAGNETIC METAL SUBSTRATE AND INDUCTANCE ELEMENT - The inductance device ( | 02-12-2015 |
20150036709 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an Al | 02-05-2015 |
20150035118 | SEMICONDUCTOR DEVICE INCLUDING AN ELECTRODE LOWER LAYER AND AN ELECTRODE UPPER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized. | 02-05-2015 |
20150034981 | CHIP COMPONENT - [Problem] There is a need for a chip component which has excellent mountability, which can accommodate multiple types of requested values with a common basic design, and which has improved geometric accuracy and micromachining accuracy. | 02-05-2015 |
20150034970 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. | 02-05-2015 |
20150022938 | CHIP CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - [Theme] To provide a chip capacitor capable of easily and rapidly accommodating a plurality of types of capacitance values using a common design and a method for manufacturing the chip capacitor. [Solution] A chip capacitor | 01-22-2015 |
20150015219 | DC/DC CONVERTER - A DC/DC converter comprises: inductors L provided for respective channels; switching circuits provided for the respective channels; and a controller configured to change the number of channels to be activated, i.e., K, according to an amount of a load current I | 01-15-2015 |
20150011065 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion that is disposed in the element forming region and that is formed by alternately arranging a drift layer of the first conductivity type penetrated by the concave portion and a resurf layer of a second conductivity type being in contact with the drift layer on the semiconductor substrate; and a base region of the second conductivity type that is disposed on the superjunction structure portion so as to be in contact with the drift layer in the element forming region, that is penetrated by the concave portion, and that faces the gate electrode with the gate insulating film therebetween. | 01-08-2015 |
20140374837 | SEMICONDUCTOR DEVICE - A semiconductor device is formed, the semiconductor device including: an SOI substrate; field insulating films that are formed on the SOI substrate and that separate a plurality of element formation regions; first and second HV pMOSs, and first and second LV pMOSs that are formed in the plurality of element formation regions; a first interlayer insulating film and a second interlayer insulating film formed on the SOI substrate; a mold resin formed on the second interlayer insulating film; and conductive films that are formed on the first interlayer insulating film and that are interposed between the plurality of element formation regions, and the field insulating films and mold resin. | 12-25-2014 |
20140368965 | CHIP COMPONENT AND METHOD OF PRODUCING THE SAME - [Subject] To provide a highly-reliable and small-size chip component, e.g., a chip resistor having an accurate resistance value. | 12-18-2014 |
20140368950 | SWITCHING REGULATOR, MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPARATUS - A switching regulator has an output stage which, with an output switch element, an inductor, a rectifying element, and a smoothing element, generates an output voltage from an input voltage, a divided voltage generator which generates a divided voltage from a switch voltage generated at one terminal of the rectifying element, a selector which outputs one of the divided voltage and a fixed voltage in accordance with a switching signal as a select voltage, a zero-cross comparator which monitors the select voltage to generate a zero-cross detection signal, and a controller which generates the switching signal in accordance with the necessity of monitoring the zero-cross of an inductor current and which performs on/off control of the output switch element reflecting the zero-cross detection signal. | 12-18-2014 |
20140367153 | CHIP RESISTOR AND MOUNTING STRUCTURE THEREOF - A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate. | 12-18-2014 |
20140361865 | CHIP RESISTOR - [Problem] There is demand for chip resistors that are compact and that have high resistivity. [Solution] A chip resistor ( | 12-11-2014 |
20140361398 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes: a first conductive type semiconductor device; a first conductive type drift region formed by epitaxial growth on the semiconductor substrate; a plurality of first conductive type vertical implantation regions formed by multistage ion implantation in the drift region, the vertical implantation regions having a prescribed vertical implantation width and a prescribed drift region width; an anode electrode disposed on the front surface of the drift region opposite to the semiconductor substrate, the anode electrode being in Schottky contact with the drift region and in ohmic contact with the first conductive type vertical implantation regions; and a cathode electrode disposed on the rear surface of the semiconductor substrate opposite to the drift region, the cathode electrode being in ohmic contact with the semiconductor substrate. | 12-11-2014 |
20140361372 | SEMICONDUCTOR INTEGRATED CIRCUIT - An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor. | 12-11-2014 |
20140355635 | TWO DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASERS - The 2D-PC SEL includes: a PC layer; and a lattice point for forming resonant-state arranged in the PC layer, and configured so that a light wave at a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a direction normal to the surface of the PC layer. The lattice point for forming resonant-state has two types of lattice points including a first lattice point and a second lattice point, and the shapes of the adjacent first lattice point and second lattice point are different from each other. | 12-04-2014 |
20140355119 | DRIVING CIRCUIT AND DRIVING METHOD FOR VOICE COIL MOTOR, AND LENS MODULE AND ELECTRONIC DEVICE USING THE SAME - Vibration is suppressed in a feedback type VCM actuator. A converting unit converts a position command value into an internal command value varied based on a waveform having a period which is half of a period of a trigonometric function, the position command value being indicative of a position of a mover and changeable step by step. A driving unit receives a position detection value indicating a current position of the mover from a sensor and drives a voice coil motor such that the position detection value matches the internal command value. | 12-04-2014 |
20140354345 | SWITCH CONTROL CIRCUIT, SWITCHING POWER SUPPLY, AND ELECTRONIC APPARATUS - A switch control circuit that includes a control unit configured to generate a control signal; a switch driving unit configured to drive a switch element based on the control signal; and a slew rate adjusting unit configured to control the switch driving unit to change a slew rate of the switch element periodically in a predetermined change pattern. | 12-04-2014 |
20140354066 | WIRELESS POWER TRANSMITTER - A first oscillator is configured to be switchable between a disabled state and an oscillation state in which a first clock signal CLK | 12-04-2014 |
20140353845 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - A production method for a semiconductor device having a multi-level interconnection structure including a plurality of interconnection layers stacked one on another on a semiconductor substrate is provided. In the production method, the step of forming each of the interconnection layers of the multi-level interconnection structure includes an interconnection forming step of forming a real interconnection and a dummy interconnection, an insulative film forming step of forming an insulative film covering the real interconnection and the dummy interconnection, and a planarization step of planarizing a surface of the insulative film. The production method includes: a step of computing an in-plane distribution of an overall thickness of the multi-level interconnection structure to be expected when no dummy interconnection is formed; and a step of defining a dummy present zone and a dummy absent zone. The dummy interconnection is formed in the defined dummy present zone outside the defined dummy absent zone in each of the interconnection layers. | 12-04-2014 |
20140353746 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type, a plurality of gate trenches each formed so as to extend across the source region and the drain region, in a plan view observed in a direction of a normal to the surface of the semiconductor layer, a channel region of a first conductivity type made of the semiconductor layer sandwiched by the gate trenches adjacent to each other, having a channel length along a direction extending from the drain region to the source region, and a gate electrode buried in the gate trench via a gate insulating film, and the channel region has a thickness in the plan view not more than two times a width of a depletion layer to be generated due to a built-in potential between the channel region and the gate electrode. | 12-04-2014 |
20140353737 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second conductivity type, which are a pair of regions formed in the active region, for providing a channel region of a first conductivity type for a region therebetween, and a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the projecting portion in a manner not overlapping the projecting portion, in which an aspect ratio of the buried film is 2.3 to 3.67. | 12-04-2014 |
20140348195 | TWO DIMENSIONAL PHOTONIC CRYSTAL VERTICAL CAVITY SURFACE EMITTING LASERS - The 2D-PC vertical cavity surface emitting laser includes: a PC layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the PC layer is diffracted in a plane of the PC layer, and is diffracted in a surface vertical direction of the PC layer. The perturbation for diffracting the light wave in the surface vertical direction of the PC layer is applied to the lattice point for forming resonant-state. The term “perturbation” means that modulation is periodically applied to the lattice point for forming resonant-state. For example, the periodic modulation may be refractive index modulation, hole-diameter modulation, or hole-depth modulation. | 11-27-2014 |
20140347023 | SEMICONDUCTOR INTEGRATED CIRCUIT - A reference power supply is built into a semiconductor integrated circuit, receives an input voltage V | 11-27-2014 |
20140346993 | Fan motor driving device, driving method, and cooling device and electronic machine using the same - A fan motor driving device driven based on a pair of out-of-phase Hall signals may include a first driving portion, configured to (i) amplify a difference of the pair of the Hall signals with a first polarity and generate a first control signal, and (ii) switch between a driving status and a regeneration status; a second driving portion, configured to (i) amplify the difference of the pair of the Hall signals with a second polarity, and generate a second control signal, and (ii) switch between a driving status and a regeneration status; and a regeneration controller, controlling statuses of the first driving portion and the second driving portion, respectively. | 11-27-2014 |
20140346668 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC COMPONENT - An electrode layer is formed on a gate insulating film. An interlayer insulating film is formed on the gate insulating firm. A lower pad is formed by a damascene method. Next, a through hole is formed, and a first interlayer insulating film, which is provided with a projected portion that is in the same pattern as a lower insulating film, is exposed within the through hole at the same time. After etching the first interlayer insulating film so that a part of the projected portion remains as an etching residue, a via insulating film is formed and the via insulating film at the bottom of the through hole is etched. After that, a through electrode is formed by plating an electrode material on the inner side of the via insulating film on the through hole. | 11-27-2014 |
20140340887 | LED MODULE AND METHOD OF MANUFACTURING THE SAME - A compact LED module and a method of manufacturing such an LED module are provided. The LED module includes a first-pole first lead, a first-pole second lead, a first-pole third lead, a second-pole first lead, a second-pole second lead, a second-pole third lead, a first LED chip, a second LED chip, a third LED chip, and a housing. A distal end of the first-pole first lead is offset toward a second-pole side in a first direction with respect to both a distal end of the second-pole second lead and a distal end of the second-pole third lead. | 11-20-2014 |
20140340789 | OPERATIONAL AMPLIFIER, MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE - An operational amplifier has an input stage which generates a first input current and a second input current in accordance with a first input signal and a second input signal, an offset adjuster which gives offsets to the first input current and the second input current respectively to generate a first output current and a second output current, an output stage which generates an output signal in accordance with the first output current and the second output current, and an offset current generator which generates a first offset current and a second offset current in accordance with an offset adjustment signal. The offset adjuster gives the offsets to the first input current and the second input current respectively by using the first offset current and the second offset current. | 11-20-2014 |
20140340785 | A/D CONVERTER, MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE - An A/D converter has an analog multiplexer stage which selects one of a plurality of first analog signals as a second analog signal, an amplifier stage which amplifies the second analog signal to generate a third analog signal, an A/D conversion stage which converts the third analog signal into a digital signal, and a sequencer which controls those stages. The sequencer performs input switching processing in the analog multiplexer stage on completion of sample hold processing by the A/D conversion stage, when performing a plurality of times of A/D conversion processing sequentially, without waiting for completion of the A/D conversion processing. | 11-20-2014 |
20140340783 | BACK ELECTROMOTIVE FORCE MONITORING CIRCUIT, MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE - A back electromotive force monitoring circuit has a speed detection voltage generator which biases a back electromotive force generated by a voice coil motor with a predetermined reference voltage to generate a speed detection voltage, and a calculator which generates a motor control signal in accordance with the speed detection voltage. The calculator includes a subtracter which subtracts the reference voltage from the speed detection voltage prior to generation of the motor control signal. | 11-20-2014 |
20140340615 | DRIVING CIRCUIT OF LIGHT EMITTING ELEMENT, AND LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE LIGHT EMITTING ELEMENT - A driving circuit for a light emitting element is disclosed. The driving circuit includes a DC-DC converter configured to generate a drive voltage between a first line and a second line; a current driver, configured to be connected to the light emitting element in series between the first line and the second line, configured to supply a drive current to the light emitting element; a protection resistor configured to be connected to the light emitting element in series between the first line and the current driver; and a controller configured to control the DC-DC converter such that a first detection voltage, which corresponds to a voltage between both ends of the current driver, approaches a predetermined reference voltage and perform a predetermined protection process if the drive voltage between the first line and the second line exceeds a predetermined first threshold voltage. | 11-20-2014 |
20140339595 | LED MODULE - An LED module is provided with a lead, an LED chip mounted on the obverse surface of the lead, and a case covering at least a part of the lead. The case has a side wall surrounding the LED chip. The lead includes a thin extension whose bottom surface is spaced apart upward from the reverse surface of the lead in the thickness direction of the lead. The case is provided with a holding portion that covers at least a part of each of the top surface and the bottom surface of the first thin extension | 11-20-2014 |
20140332840 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which can control of current density and can optimize current density and in which a rise in luminosity is possible, and a fabrication method of the semiconductor light emitting device are provided. The semiconductor light emitting device including: a semiconductor substrate structure including a semiconductor substrate, a first metal layer placed on a first surface of the semiconductor substrate, and a second metal layer placed on a second surface of the semiconductor substrate; and a light emitting diode structure including a third metal layer placed on the semiconductor substrate structure, a current control layer placed on the third metal layer and composed of a transparent insulating film and a current control electrode, an epitaxial growth layer placed on the current control layer, and a surface electrode placed on the epitaxial growth layer, wherein the semiconductor substrate structure and the light emitting diode structure are bonded by using the first metal layer and the third metal layer. | 11-13-2014 |
20140322854 | METHOD FOR MANUFACTURING A MEMS SENSOR - A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth. | 10-30-2014 |
20140321001 | CURRENT DETECTION CIRCUIT, MOTOR DRIVING DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE - A current detection circuit for detecting a maximum current value in a three-phase motor includes an identifier configured to identify a maximum current phase having the maximum current value among phases of the motor, and a detector configured to detects the maximum current value by summing current values of phases other than the maximum current phase when the current direction in the maximum current phase is a predetermined first direction. | 10-30-2014 |
20140320071 | ELECTRICAL STORAGE DEVICE MONITORING CIRCUIT, CHARGING SYSTEM, AND INTEGRATED CIRCUIT - An electrical storage device monitoring circuit includes a 3-state buffer configured to switch between a high output state and a low output state based on a flag output delivered from a previous electrical storage device monitoring circuit at a front stage, and also configured to detect a disconnection between the current electrical storage device monitoring circuit and the previous electrical storage device monitoring circuit at the front stage; a detection circuit configured to monitor an electrical storage device to detect whether the electrical storage device is normal or abnormal; and an output circuit configured to deliver the flag output to a subsequent electrical storage device monitoring circuit at a next stage based on an input of the 3-state buffer and a detection result of the detection circuit. | 10-30-2014 |
20140319456 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance. | 10-30-2014 |
20140315359 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film. | 10-23-2014 |
20140314636 | Microchip - There is provided a microchip including a fluid circuit composed of a space formed inside, and causing a liquid present in the fluid circuit to move within the fluid circuit by application of centrifugal force, the microchip including: an opening provided in a surface of the microchip and connected to the fluid circuit; a lid portion for opening and closing the opening; and a specimen take-in portion provided at the lid portion or in the opening, for taking in a specimen. | 10-23-2014 |
20140313794 | POWER DELIVERY DEVICE AND START-UP METHOD, AC ADAPTER AND ELECTRONIC APPARATUS - The PD device includes: a DC/DC converter disposed between an input and an output; a primary-side controller configured to start up the DC/DC converter; and a secondary-side controller connected to an output of the DC/DC converter, the secondary-side controller AC-coupled to the output, the secondary-side controller configured to feed back electric power information of the output to the primary-side controller and an input of the DC/DC converter, wherein the secondary-side controller controls an input current of the DC/DC converter, thereby varying an output voltage value and an available output current capacity of the DC/DC converter. | 10-23-2014 |
20140313793 | POWER DELIVERY DEVICE, AC ADAPTER, ELECTRONIC APPARATUS AND POWER DELIVERY SYSTEM - The PD device includes: a DC/DC converter disposed between an input and an output; a primary-side controller configured to control an input current of the DC/DC converter; and a secondary-side controller connected with AC coupling to the output, and configured to feed back electric power information of the output to the primary-side controller. The primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter by controlling the input current on the basis of the electric power information fed back from the secondary-side controller. | 10-23-2014 |
20140313792 | POWER DELIVERY DEVICE, AC ADAPTER, AND ELECTRONIC APPARATUS - The PD device comprises a primary-side controller configured to control an input current of a DC/DC converter disposed between an input and an output, and a secondary-side controller connected with AC coupling to the output, and configured to feedback electric power information of the output to the primary-side controller. The primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter by controlling the input current on the basis of the electric power information fed back from the secondary-side controller. The primary-side controller can change an overpower detecting set value in accordance with the target equipments connected to the output, thereby executing the power change of the DC/DC converter. | 10-23-2014 |
20140313608 | POWER SUPPLY CIRCUIT - Each of unit blocks (UB | 10-23-2014 |
20140312872 | POWER SUPPLY CIRCUIT - A power supply circuit | 10-23-2014 |
20140312863 | CONTROL CIRCUIT FOR STEP-UP DC/DC CONVERTER - A switching transistor is configured such that its on resistance R | 10-23-2014 |
20140312684 | INSULATION TYPE SWITCHING POWER SUPPLY APPARATUS - A power supply apparatus comprises: a transformer that includes primary/secondary windings that are electromagnetically connected to each other with polarities opposite to each other, an output switch that activates/inactivates an electric-current route that extends from an application terminal for an input voltage to a ground terminal via the primary winding a rectifying-smoothing portion that generates an output voltage from an induced voltage, a feedback voltage generation portion that monitors a switch voltage appearing at a connection node between the primary winding and the output switch and generates a feedback voltage in accordance with the output voltage, a reference voltage generation portion that generates a reference voltage, a comparator that compares the feedback voltage and the reference voltage with each other to generate a comparison signal, and a switching control portion that generates an output switch control signal by means of an on-time control method in accordance with the comparison signal. | 10-23-2014 |
20140312513 | SEMICONDUCTOR DEVICE, SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane. | 10-23-2014 |
20140306328 | SEMICONDUCTOR DEVICE - The semiconductor device includes a semiconductor element, a main lead and a resin package. The semiconductor element includes an obverse surface and a reverse surface spaced apart from each other in a thickness direction. The main lead supports the semiconductor element via the reverse surface of the semiconductor element. The resin package covers the entirety of the semiconductor element. The resin package covers the main lead in such a manner that a part of the main lead is exposed from the resin package. The semiconductor element includes a part that does not overlap the main lead as viewed in the thickness direction. | 10-16-2014 |
20140306283 | SUPERJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device that includes the following is manufactured: an n | 10-16-2014 |
20140306275 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device includes an insulating layer formed selectively on a semiconductor layer; a lower electrode, formed on the insulating layer, having an end portion at a position spaced apart by a predetermined distance inward from a periphery of the insulating layer; a dielectric film formed on the lower electrode; an upper electrode, formed on the dielectric film, facing the lower electrode with the dielectric film interposed between the upper electrode and the lower electrode; and a passivation film, formed to cover the insulating layer, starting from the end portion of the lower electrode and extending toward the periphery of the insulating layer. The passivation film includes an insulating material having an etching selectivity with respect to the insulating layer. | 10-16-2014 |
20140302755 | SUCTION-HOLDING APPARATUS AND WAFER POLISHING APPARATUS - A suction-holding apparatus includes a suction plate made of an air-permeable material, a holding member formed with a through-hole in which the suction plate is placed, and a base to which the holding member is attached. The suction plate includes a jutting-out portion so that the outer edge of the rear face is disposed outwardly from the outer edge of the front face. The through-hole includes a first edge and a second edge spaced apart from each other in the thickness direction. The first edge is adjacent to the base. The holding member includes an eaved portion so that the second edge of the through-hole is disposed inwardly from the outer edge of the rear face. | 10-09-2014 |
20140300993 | MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE - A motor drive device has a motor driver adapted to receive a first power supply voltage to drive a motor; an internal regulator adapted to generate from an input voltage an internal power supply voltage; and a power supply switcher adapted to receive both the first power supply voltage and a second power supply voltage lower than the first power supply voltage to output, as the input voltage, the second power supply voltage when the second power supply voltage is normal and to output, as the input voltage, the first power supply voltage when the second power supply voltage is abnormal. | 10-09-2014 |
20140300987 | MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC DEVICE - A motor drive device has a spindle motor driver adapted to drive a spindle motor. the spindle motor driver includes lower side NMOSFETs, one for each phase, which connect and disconnect terminals, one for each phase, of the spindle motor to and from a ground terminal; a controller adapted to generate a switch control signal and a brake control signal; lower side pre-drivers, one for each phase, connected between an application terminal of an internal power supply voltage and the ground terminal and adapted to generate lower side gate signals, one for each phase, in accordance with the switch control signal to output the lower side gate signals to the lower side NMOSFETs, one for each phase; and a brake unit adapted to pull up to the internal power supply voltage all the lower side gate signals, one for each phase, in accordance with the brake control signal. | 10-09-2014 |
20140300208 | SWITCH STATE DETECTION CIRCUIT AND SWITCH SYSTEM - A switch state detection circuit according to the present invention comprises: a plurality of switch connection portions to each of which a switch is connected, a connection line to which any one of the switch connection portions is connected in a switchable manner, a detection portion that detects a state of the switch connected to the connection line based on a state of the connection line, and a connection control portion that switches successively each of the switch connection portions and connects it to the connection line, wherein the state of each switch is detected. | 10-09-2014 |
20140299990 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes an insulating layer, a copper wiring for wire connection formed on the insulating layer, a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper, a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface for a wire, and a side protecting layer covering a side surface of the copper wiring, wherein the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer. | 10-09-2014 |
20140293487 | CIRCUIT CONTROL DEVICE, CIRCUIT SYSTEM, SWITCH STATE DETECTION CIRCUIT AND VEHICLE - A circuit control device for controlling power consumption of a plurality of circuit units includes a monitoring unit configured to monitor whether a detection temperature of each of the circuit units meets a predetermined overheat condition, and an overheat protection unit configured to execute an overheat protection operation when the overheat condition is met in any one of the circuit units, wherein the overheat protection operation is an operation to reduce power consumption of an overheat unit meeting the overheat condition, among the circuit units, and a neighbor unit disposed near the overheat unit. | 10-02-2014 |
20140292284 | ELECTRICAL CAPACITOR, ELECTRICAL CAPACITOR MODULE, FABRICATION METHOD OF THE ELECTRICAL CAPACITOR, AND FABRICATION METHOD OF THE ELECTRICAL CAPACITOR MODULE - An electrical capacitor includes: a band-shaped coating foil for positive electrode having a non-coated part of which an edge of one longitudinal side is not coated with an active material; a band-shaped coating foil for negative electrode having a non-coated part of which an edge of one longitudinal side is not coated with an active material; and a band-shaped separators through which an electrolysis solution and ions can pass. The coating foil for positive electrode and the coating foil for negative electrode are flatly wound via the separators so that the non-coated part in the side of the coating foil for positive electrode and the non-coated part in the side of the coating foil for negative electrode are exposed in opposite sides to each other, and the electrode group of the non-coated parts exposed to both sides are bonded. | 10-02-2014 |
20140291845 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface. | 10-02-2014 |
20140291841 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC COMPONENT - [Problem] To provide a semiconductor device both capable of greatly reducing the size of a through electrode and capable of reducing the size of a surface electrode and provide a method for manufacturing a semiconductor device capable of reliably bringing a through electrode into contact with a surface electrode regardless of the size of the surface electrode. | 10-02-2014 |
20140291828 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor element having an electrode facing a first direction; a first lead having a conductive distal end surface facing the electrode, and a rising portion which is connected to the distal end surface to extend away from the electrode; a conductive bonding material bonding the electrode of the semiconductor element to the distal end surface of the first lead; and a sealing resin covering the semiconductor element, at least a portion of the first lead, and the conductive bonding material | 10-02-2014 |
20140291679 | SEMICONDUCTOR DEVICE - A semiconductor device disclosed in the present specification comprises: a semiconductor chip, a package that incorporates the semiconductor chip, and a plurality of lower-surface pads disposed on a lower surface of the package, a plurality of upper-surface pads disposed on an upper surface of the package, wherein the plurality of upper-surface pads include a plurality of monitor pads each of which is connected to each of all the lower-surface pads. | 10-02-2014 |
20140287559 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: an n | 09-25-2014 |
20140284784 | SEMICONDUCTOR DEVICE - A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively. | 09-25-2014 |
20140284766 | FERROELECTRIC CAPACITOR - A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternately, and the stacked electrode structure includes at least one of two or more oxide conductive layers and two or more metal layers. | 09-25-2014 |
20140284754 | CHIP DIODE AND DIODE PACKAGE - [Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode. | 09-25-2014 |
20140284731 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate that is made of a semiconductor material and has a main surface formed with a recess. The semiconductor device also includes a wiring layer formed on the substrate, an electronic element housed in the recess, and a sealing resin covering at least a part of the electronic element. | 09-25-2014 |
20140284712 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: an n-type first source region and first drain region formed in a surface of a p-type epitaxial layer; an n-type first source drift region and first drain drift region formed so as to individually surround the first source region and the first drain region; and a p-type first diffusion region formed in a first channel region and having a higher concentration than the epitaxial layer, the semiconductor device having p-type first withstand voltage maintaining regions formed between the first diffusion region, and the first source drift region and first drain drift region respectively, the first withstand voltage maintaining regions having a lower concentration than the first diffusion region. | 09-25-2014 |
20140284681 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device of the present invention is a semiconductor device selectively including a nonvolatile memory cell on a semiconductor substrate, and includes a trench formed in the semiconductor substrate, an element separation portion buried into the trench such that the element separation portion has a projecting part projecting from the semiconductor substrate, the element separation portion defining an active region in first a region for the nonvolatile memory cell of the semiconductor substrate, and a floating gate disposed in the active region such that the floating gate selectively has an overlapping part overlapping the element separation portion, and the floating gate has a shape recessed with respect to the overlapping part. | 09-25-2014 |
20140264267 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer. | 09-18-2014 |
20140255040 | PHOTONIC-CRYSTAL SLAB ABSORBER AND HIGH-FREQUENCY CIRCUIT AND ELECTRONIC COMPONENTS, AND TRANSMITTER, RECEIVER AND PROXIMITY WIRELESS COMMUNICATION SYSTEM - The photonic-crystal (PC) slab absorber includes: a two-dimensional (2D)-PC slab composed of semiconducting materials; and a lattice point periodically arranged in the 2D-PC slab, the lattice point for forming resonant-state which can capture an electromagnetic waves incident from an outside by resonating an electromagnetic wave in a band edge of a photonic band structure of the 2D-PC slab in the plane of the 2D-PC slab. The 2D-PC slab is doped with impurities and can absorb the captured electromagnetic wave in the band edge resonant frequency of the 2D-PC slab. | 09-11-2014 |
20140248020 | TERAHERZ-WAVE CONNECTOR AND TERAHERZ-WAVE INTEGRATED CIRCUITS, AND WAVE GUIDE AND ANTENNA STRUCTURE - The terahertz-wave connector includes: a 2D-PC slab; lattice points periodically arranged in the 2D-PC slab, the lattice points for diffracting the THz waves in PBG frequencies of photonic band structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC slab; a 2D-PC waveguide disposed in the 2D-PC slab and formed with a line defect of the lattice points; and an adiabatic mode converter disposed at the edge face of the 2D-PC slab to which the 2D-PC waveguide extended, the 2D-PC waveguide extended to the adiabatic mode converter. There is provided also the THz-wave IC to which such a terahertz-wave connector is applied. | 09-04-2014 |
20140247108 | CHIP RESISTOR, MOUNTING STRUCTURE FOR CHIP RESISTOR, AND MANUFACTURING METHOD FOR CHIP RESISTOR | 09-04-2014 |
20140246789 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR CHIP CONNECTED IN A FLIP CHIP MANNER - A semiconductor device ( | 09-04-2014 |
20140240083 | CHIP RESISTOR AND METHOD FOR MAKING THE SAME - A chip resistor includes an insulating substrate, a resistor element arranged on the obverse surface of the substrate, a bonding layer provided between the resistor element and the substrate, a first electrode connected to the resistor element, and a second electrode connected to the resistor element. The second electrode is deviated from the first electrode in a direction perpendicular to the thickness direction of the substrate. The substrate includes a side surface between the obverse surface and the reverse surface. The first electrode covers the resistor element, and also the side surface and the reverse surface of the substrate. | 08-28-2014 |
20140239874 | MOTOR DRIVING CIRCUIT, ELECTRONIC DEVICE USING THE SAME, AND DRIVING METHOD THEREOF - A motor driving circuit for driving a step motor includes a logical circuit synchronized with a step pulse signal to control a bridge circuit connected to a coil of the step motor and control electric power supplied to the coil of the step motor, a counter electromotive force detecting unit configured to detect a counter electromotive force generated between both ends of the coil, and a step-out predicting unit configured to assert a detection signal indicating a sign of step-out of the step motor, when the counter electromotive force detected at a detection time after the lapse of a time calculated by multiplying a predetermined coefficient to a length of a high impedance period of the coil since transition to the high impedance period is lower than a predetermined threshold voltage. | 08-28-2014 |
20140239851 | AUTOMOBILE LED DRIVING DEVICE - An automobile LED driving device includes a current setting portion to set multiple reference currents independently from one another for multiple respective current setting resistors connected externally, a current controller to select one of the multiple reference currents based on a control signal provided from outside, and an output transistor to control an output current to an automobile LED connected externally based on the reference current selected by the current controller. | 08-28-2014 |
20140239846 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic EL device comprising: an organic EL element; a first transistor that controls a drive current of the organic EL element in accordance with a brightness adjustment voltage; and a temperature correction circuit that corrects the brightness adjustment voltage in accordance with a temperature; wherein the temperature correction circuit includes: a second transistor that has a same temperature characteristic as the first transistor; a resistor element that is connected to the second transistor; and an operational amplifier that controls the second transistor such that a predetermined reference voltage and a voltage across the resistor element become equal to each other; wherein the temperature correction circuit corrects the brightness adjustment voltage in accordance with an output from the operational amplifier. | 08-28-2014 |
20140239445 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line. | 08-28-2014 |
20140239340 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - The light emitting device includes: a substrate; a first conductive-type semiconductor layer laminated on the substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer, a second ITO layer, a first metal layer and a second metal layer. The first ITO layer is laminated at a side of the first conductive-type semiconductor layer opposite to the substrate. The second ITO layer is laminated at a side of the second conductive-type semiconductor layer opposite to the substrate. The first metal layer is laminated on the first ITO layer. The second metal layer is laminated on the second ITO layer. | 08-28-2014 |
20140239330 | OPTICAL COMMUNICATION MODULE AND METHOD FOR MAKING THE SAME - An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member. | 08-28-2014 |
20140233932 | LENS CONTROL DEVICE AND IMAGE SENSING DEVICE USING SAME - There is provided a lens control device that feeds a motor current to a lens drive motor which drives lens according to the motor current, the lens control device including: a servo computation portion that calculates a motor current setting value such that a deviation of the position of the lens from a target position to which a correction offset has been added is reduced; a motor driver that generates the motor current according to the motor current setting value; and a calibration computation portion that adjusts the correction offset such that an average value of the motor current approaches zero. | 08-21-2014 |
20140232547 | LED DRIVING DEVICE, ILLUMINATOR, AND LIQUID CRYSTAL DISPLAY DEVICE - The present invention provides a light emitting diode (LED) driving device as a semiconductor device, which comprises: a direct current/direct current (DC/DC) controller, for controlling an output segment that is used to generate an output voltage from an input voltage and supply the output voltage to an LED; an output current driver, for generating an output current of the LED; and an LED short-circuit detection circuit, for monitoring a cathode voltage of the LED to perform an LED short-circuit detection, wherein the LED short-circuit detection circuit controls whether an action is performed or not according to a short-circuit detection enable signal input from outside the LED driving device. | 08-21-2014 |
20140232515 | CHIP RESISTOR AND METHOD FOR MAKING THE SAME - A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge. | 08-21-2014 |
20140232237 | Power Generation Apparatus - A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current. | 08-21-2014 |
20140231926 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package ( | 08-21-2014 |
20140231906 | Semiconductor Device - Provided is a semiconductor device in which on-resistance is largely reduced. In a region ( | 08-21-2014 |
20140220740 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 08-07-2014 |
20140218988 | STEP DOWN SWITCHING REGULATOR - A current limiting comparator generates a current limiting signal S | 08-07-2014 |
20140218657 | CONTROL CIRCUIT FOR LIGHT EMITTING APPARATUS - An error amplifier amplifies the difference between a first detection voltage V | 08-07-2014 |
20140217426 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, ELECTRONIC APPARATUS, AND DISPLAY APPARATUS - A semiconductor integrated circuit device includes a COF substrate; a semiconductor integrated circuit mounted on the COF substrate and having a first voltage circuit portion operating at a first voltage range and a second voltage circuit portion operating at a second voltage range higher than the first voltage range, the circuit portions being formed on a single chip; and a resin layer for sealing the COF substrate and the semiconductor integrated circuit. | 08-07-2014 |
20140211964 | AUDIO OUTPUT DEVICE - Provided is an audio output device capable of preventing noises and improving the S/N ratio even if no audio signal is inputted in the middle of the input of audio signals, or even if an audio-signal input state and a no-signal state are alternately repeated. In the provided audio output device, a multiplier is provided on the input side of each of the delayers. Each multiplier multiplies the addition output of the corresponding one of adders by a multiplier coefficient supplied by the coefficient counter. If there is no input of digital audio signals into a ΔΣ modulator, the counter control circuit decreases the output of the coefficient counter down to 0 stepwise at predetermined intervals. | 07-31-2014 |
20140210002 | N-CHANNEL DOUBLE DIFFUSION MOS TRANSISTOR, AND SEMICONDUCTOR COMPOSITE DEVICE - The n-channel double diffusion MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the p-type semiconductor substrate and the p-type epitaxial layer. In a p-type body layer provided in a surface portion of the p-type epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the p-type epitaxial layer in spaced relation from the p-type body layer. An n-type drain layer is provided in a surface portion of the p-type epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the p-type epitaxial layer between the n-type drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer. | 07-31-2014 |
20140209964 | LED MODULE - A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member. | 07-31-2014 |
20140203726 | OSCILLATION CIRCUIT - An oscillation circuit includes: a ramp voltage generating unit configured to generate a ramp voltage; and a clock signal generating unit configured to generate a clock signal. The clock signal generating unit includes: a bias unit configured to apply one of the ramp voltage and a fixed voltage, as a bias voltage, to a resistor; and an oscillator configured to determine an oscillation frequency of the clock signal in response to a bias current flowing through the resistor. | 07-24-2014 |
20140203318 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT PACKAGE - A light emitting element includes: a sapphire substrate having a front surface and a rear surface opposite the front surface; a first conductive type semiconductor layer stacked on the front surface of the sapphire substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; a reflective layer which contains Ag and is disposed on the rear surface of the sapphire substrate, the reflective layer reflecting light from the sapphire substrate toward the front surface of the sapphire substrate; and an adhesive layer which is interposed between the sapphire substrate and the reflective layer and is made of ITO, the adhesive layer being adhered to the reflective layer. | 07-24-2014 |
20140203299 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V | 07-24-2014 |
20140198355 | IMAGE SENSOR MODULE - An image sensor module includes a light source unit that emits a linear light beam elongate in a primary scanning direction to an object to be read, and a lens unit including an incidence surface and an output surface oriented opposite to each other. The lens unit is configured to receive light from the object through the incidence surface and output the light through the output surface. The module also includes a sensor IC that receives the light outputted from the output surface, a housing that holds the light source unit and the lens unit, and a support member that supports the lens unit such that the incidence surface is located more distant from the sensor IC than the output surface in a secondary scanning direction. The support member includes a reflection surface that reflects the light from the object toward the incidence surface. | 07-17-2014 |
20140197840 | Lighting Apparatus - A lighting apparatus of the present invention includes: a light source; a power source unit arranged to power the light source; a detector unit arranged to detect the deterioration of ability of the power source unit to power the light source; and a determination unit arranged to determine the life of the power source unit in response to the detector unit. | 07-17-2014 |
20140197512 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with first and second lower electrodes, a semiconductor element supported on the substrate and including upper and lower electrodes, a conductive bonding material bonding the lower electrode of the element and the substrate to each other, a wire connecting the upper electrode of the element and the substrate to each other, and a sealing resin covering the semiconductor element and the wire. The substrate includes a barrier that encloses at least partially the conductive bonding material. | 07-17-2014 |
20140191270 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern. | 07-10-2014 |
20140191268 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT PACKAGE - A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type semiconductor layer; and a reflective layer stacked on the ITO layer. The substrate is transparent to an emission wavelength of the light emitting layer, and the reflective layer includes a Ti-containing first layer stacked on the ITO layer to make contact with the ITO layer and an Al-containing second layer stacked on the first layer in an opposite side to the ITO layer. | 07-10-2014 |
20140186214 | MICROCHIP - A microchip including a fluid circuit composed of a space formed inside is provided. The space includes a first space, a second space, and a space connecting portion connecting the first space and the second space, and the space connecting portion has a structure portion restraining liquid moving between the first space and the second space from moving due to wettability with respect to the space connecting portion surface. | 07-03-2014 |
20140184810 | INSPECTION SYSTEM, INSPECTION METHOD, PIXEL CIRCUIT AND IMAGE SENSOR - An inspection system includes a CIGS camera configured to generate a visible light image and an infrared light image of an inspection object by imaging visible light and infrared light simultaneously on the same optical axis using a CIGS image sensor, and an inspection apparatus configured to inspect the inspection object based on the visible light image and the infrared light image. | 07-03-2014 |
20140183616 | SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE - A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a prescribed direction, a drain region formed on the surface layer portion, adjacent to a second side of the trench opposite to the first side in the prescribed direction, a first insulating film on the bottom surface and the side surface of the trench, a floating gate stacked on the first insulating film and opposed to the bottom surface and the side surface of the trench through the first insulating film, a second insulating film formed on the floating gate, and a control gate at least partially embedded in the trench so that the portion embedded in the trench is opposed to the floating gate through the second insulating film. | 07-03-2014 |
20140177165 | MOTOR DRIVING CIRCUIT - A first calculation unit subtracts third digital data which indicates the minimum value of the duty ratio from first digital data which indicates the duty ratio of the PWM driving operation. A slope calculation unit generates slope data which is dependent on the temperature based upon second digital data which indicates the temperature. A second calculation unit multiplies the slope data by the output data of the first calculation unit. A third calculation unit sums the output data of the second calculation unit and the third digital data. A selector receives the output data of the third calculation unit and the third digital data, selects one data that corresponds to the sign of the output data of the first calculation unit, and outputs the data thus selected as a duty ratio control signal. | 06-26-2014 |
20140176030 | MOTOR DRIVE APPARATUS - A motor drive apparatus comprises: a position signal generation portion that generates a position signal corresponding to a rotor position of a brushless DC motor; and a logic portion that when starting the brushless DC motor, disposes a non-energizing period immediately after starting forced commutation at a phase switchover timing corresponding to a predetermined forced commutation frequency and performs energizing control of the brushless DC motor such that usual commutation is started at a phase switchover timing corresponding to the position signal that is generated during an inertial rotation of the rotor. | 06-26-2014 |
20140175999 | LED LIGHTING DEVICE AND DRIVING METHOD FOR THE SAME - It is provided an LED lighting device calibratable to 0 to 100% of wide range about a chromaticity and luminance of a illumination light by a simple configuration, and a driving method for the LED lighting device. The LED lighting device is provided with a first light-emitting unit and a second light-emitting unit differing a color temperature mutually, and a control circuit for executing a cyclic light/quench control of the first light-emitting unit and the second light-emitting unit, and for executing a light control of the first light-emitting unit and the second light-emitting unit by a PNM (Pulse Number Modulation) control in a fixed cycle so as to have a lighting period Ton for lighting/quenching the first light-emitting unit and the second light-emitting unit complementarily, and a quenching period Toff for quenching both the first light-emitting unit and the second light-emitting unit. | 06-26-2014 |