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MACRONIX International Co., Ltd.
HSINCHU, TW
1. 20090246964 Etching process for phase-change films - The invention is directed to a method for etching a phase change material layer comprising steps of providing a 10-01-20092. 20090207658 OPERATING METHOD OF MEMORY DEVICE - operating method of a memory array is provided 08-20-2009
3. 20090185428 OPERATING METHOD OF MULTI-LEVEL MEMORY CELL 07-23-2009
4. 20090180332 OPERATION METHOD OF NITRIDE-BASED FLASH MEMORY AND METHOD OF REDUCING COUPLING INTERFERENCE 07-16-2009
5. 20090166604 RESISTANCE TYPE MEMORY DEVICE - is provided 07-02-2009
6. 20090146266 MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 06-11-2009
7. 20090116284 MEMORY APPARATUS AND METHOD THEREOF FOR OPERATING MEMORY 05-07-2009
8. 20090116274 DIODE-LESS ARRAY FOR ONE-TIME PROGRAMMABLE MEMORY 05-07-2009
9. 20080304320 MEMORY CELL AND METHOD OF PROGRAMMING THE SAME 12-11-2008
10. 20080290397 MEMORY CELL AND METHOD FOR MANUFACTURING AND OPERATING THE SAME 11-27-2008
11. 20080253189 MEMORY UNIT 10-16-2008