ALCHIMER Patent applications |
Patent application number | Title | Published |
20150380254 | METHOD FOR FORMING A METAL SILICIDE USING A SOLUTION CONTAINING GOLD IONS AND FLUORINE IONS - A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in:
| 12-31-2015 |
20150112426 | FORMATION OF ORGANIC ELECTRO-GRAFTED FILMS ON THE SURFACE OF ELECTRICALLY CONDUCTIVE OR SEMI-CONDUCTIVE SURFACES - The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocols consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. | 04-23-2015 |
20140318975 | MACHINE SUITABLE FOR PLATING A CAVITY OF A SEMI-CONDUCTIVE OR CONDUCTIVE SUBSTRATE SUCH AS A THROUGH VIA STRUCTURE - The invention relates to a machine ( | 10-30-2014 |
20140087560 | METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD - The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. | 03-27-2014 |
20130168255 | COPPER-ELECTROPLATING COMPOSITION AND PROCESS FOR FILLING A CAVITY IN A SEMICONDUCTOR SUBSTRATE USING THIS COMPOSITION - The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a “through-via” structure for the production of interconnects in three-dimensional integrated circuits. | 07-04-2013 |
20120196441 | SOLUTION AND METHOD FOR ACTIVATING THE OXIDIZED SURFACE OF A SEMICONDUCTOR SUBSTRATE - The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. | 08-02-2012 |
20120156892 | SOLUTION AND PROCESS FOR ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE - The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. | 06-21-2012 |
20120000785 | DEVICE AND METHOD TO CONDUCT AN ELECTROCHEMICAL REACTION ON A SURFACE OF A SEMI-CONDUCTOR SUBSTRATE - The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container ( | 01-05-2012 |
20110294231 | METHOD FOR REPAIRING COPPER DIFFUSION BARRIER LAYERS ON A SEMICONDUCTOR SOLID SUBSTRATE AND REPAIR KIT FOR IMPLEMENTING THIS METHOD - Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method. | 12-01-2011 |
20100038256 | ELECTROPLATING METHOD FOR COATING A SUBSTRATE SURFACE WITH A METAL - The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. | 02-18-2010 |
20100003808 | METHOD OF PREPARING AN ELECTRICALLY INSULATING FILM AND APPLICATION FOR THE METALLIZATION OF VIAS - The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. | 01-07-2010 |
20090294293 | ELECTRODEPOSITION COMPOSITION AND METHOD FOR COATING A SEMICONDUCTOR SUBSTRATE USING THE SAID COMPOSITION - The present invention relates to an electrodeposition composition intended particularly for coating a semiconductor substrate in order to fabricate structures of the “through via” type for the production of interconnects in integrated circuits. According to the invention, the said solution comprises copper ions in a concentration of between 14 and 120 mM and ethylenediamine, the molar ratio between ethylenediamine and copper being between 1.80 and 2.03 and the pH of the electrodeposition solution being between 6.6 and 7.5. The present invention also relates to the use of the said electrodeposition solution for the deposition of a copper seed layer, and to the method for depositing a copper a seed layer with the aid of the electrodeposition solution according to the invention. | 12-03-2009 |
20090183993 | Electroplating Composition for Coating a Substrate Surface with a Metal - The object of the present invention is an electroplating composition intended in particular for coating a copper-diffusion barrier layer in the fabrication of interconnects for integrated circuits. | 07-23-2009 |
20080249272 | Modification Process For Polymer Surfaces, Notably For Hydroxylation Of Polymer Surfaces And Products So Obtained - The present invention concerns the use of RO. radicals, R being a hydrogen, an alkyl group having 2 to 15 carbons, an acyl group —COR′ in which R′ represents an alkyl group having 2 to 15 carbons, or an aroyl group —COAr in which Ar represents an aromatic group having 6 to 15 carbons, for the hydroxylation, alkoxylation or oxycarbonylation of polymer surfaces, the said polymers being different from polymers chosen from: polymethylmethacrylate (PMMA) and fluorocarbon polymers when R represents a hydrogen, or of polymer mixture surfaces, notably hydrophobic ones, the said polymers consisting in monomeric units of which at least 50% among these are aliphatic units, and the said RO. radicals being generated by electrochemical or photochemical means. | 10-09-2008 |