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SAN JOSE, CA US
1. 20110018593 MOSFET gate drive with reduced power loss 01-27-20112. 20110012196 Isolated drain-centric lateral MOSFET - lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric 01-20-2011
3. 20100133611 Isolated transistor - transistor is formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface 06-03-2010
4. 20100096029 Knee-mounted air deflector for motorcyclist 04-22-2010
5. 20100095440 Knee-mounted air deflector for motorcyclist 04-22-2010
6. 20100055864 Method of forming isolation structure for semiconductor integrated circuit substrate 03-04-2010
7. 20100022059 Method of fabricating high voltage semiconductor devices with JFET regions containing dielectrically isolated junctions 01-28-2010
8. 20100019316 Method of fabricating super trench MOSFET including buried source electrode 01-28-2010
9. 20090236683 Isolation structures for integrated circuits 09-24-2009
10. 20090215237 Method of forming lateral trench MOSFET with direct trench polysilicon contact 08-27-2009
11. 20090147655 Miniaturized disc drive containing DVD-compatible optical controller 06-11-2009
12. 20090144763 Small form factor optical data storage disc and disc drive for use in mobile electronic device 06-04-2009
13. 20090136218 Multimedia presentation format - format for accessing content such as a full-length movie from an optical disc uses an XML Description File stored on 05-28-2009
14. 20090129248 Small form factor optical disc drive for use in mobile electronic device 05-21-2009
15. 20090102439 Step-up DC/DC voltage converter with improved transient current capability 04-23-2009
16. 20090059630 High-efficiency DC/DC voltage converter including capacitive switching pre-converter and down inductive switching post-regulator 03-05-2009
17. 20090039869 Cascode Current Sensor For Discrete Power Semiconductor Devices 02-12-2009
18. 20090034137 ESD protection for bipolar-CMOS-DMOS integrated circuit devices 02-05-2009
19. 20090034136 ESD protection for bipolar-CMOS-DMOS integrated circuit devices 02-05-2009
20. 20090032876 ESD protection for bipolar-CMOS-DMOS integrated circuit devices 02-05-2009
21. 20090010035 Boost and up-down switching regulator with synchronous freewheeling MOSFET 01-08-2009
22. 20080293214 Method of fabricating trench-constrained isolation diffusion for semiconductor devices 11-27-2008
23. 20080291711 Step-down switching regulator with freewheeling diode 11-27-2008
24. 20080290911 MOSFET gate drive with reduced power loss 11-27-2008
25. 20080290452 Trench-constrained isolation diffusion for integrated circuit die 11-27-2008
26. 20080290451 Isolation structures for integrated circuits 11-27-2008
27. 20080290450 Isolation structures for integrated circuits 11-27-2008
28. 20080290449 Isolation structures for integrated circuits 11-27-2008
29. 20080282282 Method of fabricating cartridge for miniature optical data storage disc 11-13-2008
30. 20080273115 Multimedia presentation format - format for accessing content such as a full-length move from an optical disc uses an XML description file stored on the 11-06-2008
31. 20080254592 Method of forming isolation structure for semiconductor integrated circuit substrate 10-16-2008
32. 20080237783 Isolated bipolar transistor - bipolar transistor is formed in an isolation structure comprising a floor isolation region a dielectric filled trench 10-02-2008
33. 20080237782 Isolated rectifier diode - isolated diode comprises a floor isolation region a dielectric-filled trench and a sidewall region extending from a bottom of 10-02-2008
34. 20080237706 Lateral MOSFET - formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate 10-02-2008
35. 20080237704 Isolated trench MOSFET - isolation structure for a semiconductor device comprises a floor isolation region a dielectric filled trench above the floor 10-02-2008
36. 20080237656 Isolated junction field-effect transistor 10-02-2008
37. 20080230812 Isolated junction field-effect transistor 09-25-2008
38. 20080217729 Isolation structures for integrated circuit devices 09-11-2008
39. 20080217699 Isolated Bipolar Transistor - formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench 09-11-2008
40. 20080213972 Processes for forming isolation structures for integrated circuit devices 09-04-2008
41. 20080210980 Isolated CMOS transistors - formed in a P-type semiconductor substrate include an N-type submerged floor isolation region and a filled trench extending 09-04-2008
42. 20080203543 Semiconductor integrated circuit substrate containing isolation structures 08-28-2008
43. 20080203520 Isolation structure for semiconductor integrated circuit substrate 08-28-2008
44. 20080197446 Isolated diode - Various integrated circuit devices in particular a diode are formed inside an isolation structure which includes a floor isolation 08-21-2008
45. 20080197445 Isolation and termination structures for semiconductor die 08-21-2008
46. 20080197408 Isolated quasi-vertical DMOS transistor - Various integrated circuit devices in particular a quasi-vertical DMOS transistor are formed inside an 08-21-2008