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MACRONIX;C/O HAYNES BEFFEL & WOLFELD LLP

HALF MOON BAY, CA US

1. 20110039386 LATERAL POCKET IMPLANT CHARGE TRAPPING DEVICES 02-17-2011
2. 20110034003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 02-10-2011
3. 20110032770 High Temperature Methods for Enhancing Retention Characteristics of Memory Devices 02-10-2011
4. 20110024326 IC PACKAGE TRAY EMBEDDED RFID - carrier tray as described herein includes a container having pockets for holding electrical components such as 02-03-2011
5. 20110017970 SELF-ALIGN PLANERIZED BOTTOM ELECTRODE PHASE CHANGE MEMORY AND MANUFACTURING METHOD 01-27-2011
6. 20110016291 Serial Memory Interface for Extended Address Space 01-20-2011
7. 20110013446 REFRESH CIRCUITRY FOR PHASE CHANGE MEMORY 01-20-2011
8. 20110012192 Vertical Channel Transistor Structure and Manufacturing Method Thereof 01-20-2011
9. 20110012084 RESISTOR RANDOM ACCESS MEMORY CELL WITH REDUCED ACTIVE AREA AND REDUCED CONTACT AREAS 01-20-2011
10. 20110012083 PHASE CHANGE MEMORY CELL STRUCTURE - memory cell described herein includes a memory element comprising programmable resistance memory material overlying 01-20-2011
11. 20110012079 THERMAL PROTECT PCRAM STRUCTURE AND METHODS FOR MAKING 01-20-2011
12. 20110003452 HIGH-k CAPPED BLOCKING DIELECTRIC BANDGAP ENGINEERED SONOS AND MONOS 01-06-2011
13. 20100328996 PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES 12-30-2010
14. 20100328995 METHODS AND APPARATUS FOR REDUCING DEFECT BITS IN PHASE CHANGE MEMORY 12-30-2010
15. 20100321987 MEMORY DEVICE AND METHOD FOR SENSING AND FIXING MARGIN CELLS 12-23-2010
16. 20100314601 PHASE CHANGE MEMORY HAVING STABILIZED MICROSTRUCTURE AND MANUFACTURING METHOD 12-16-2010
17. 20100311217 Non-Volatile Memory Device Having A Nitride-Oxide Dielectric Layer 12-09-2010
18. 20100301330 Memory Devices Having an Embedded Resistance Memory with Metal-Oxygen Compound 12-02-2010
19. 20100301304 BURIED SILICIDE STRUCTURE AND METHOD FOR MAKING 12-02-2010
20. 20100297824 MEMORY STRUCTURE WITH REDUCED-SIZE MEMORY ELEMENT BETWEEN MEMORY MATERIAL PORTIONS 11-25-2010
21. 20100295123 Phase Change Memory Cell Having Vertical Channel Access Transistor 11-25-2010
22. 20100295009 Phase Change Memory Cells Having Vertical Channel Access Transistor and Memory Plane 11-25-2010
23. 20100293320 METHOD AND APPARATUS FOR BYTE-ACCESS IN BLOCK-BASED FLASH MEMORY 11-18-2010
24. 20100291747 Phase Change Memory Device and Manufacturing Method 11-18-2010
25. 20100290271 ONE-TRANSISTOR, ONE-RESISTOR, ONE-CAPACITOR PHASE CHANGE MEMORY 11-18-2010
26. 20100277967 GRADED METAL OXIDE RESISTANCE BASED SEMICONDUCTOR MEMORY DEVICE 11-04-2010
27. 20100276658 Resistive Memory Structure with Buffer Layer 11-04-2010
28. 20100276654 Low Operational Current Phase Change Memory Structures 11-04-2010
29. 20100270665 Leadframe - includes a die paddle and leads, in which the back side of the die paddle has a fillister 10-28-2010
30. 20100270593 INTEGRATED CIRCUIT 3D MEMORY ARRAY AND MANUFACTURING METHOD 10-28-2010
31. 20100270529 INTEGRATED CIRCUIT 3D PHASE CHANGE MEMORY ARRAY AND MANUFACTURING METHOD 10-28-2010
32. 20100265773 3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE 10-21-2010
33. 20100265766 BANDGAP ENGINEERED CHARGE TRAPPING MEMORY IN TWO-TRANSISTOR NOR ARCHITECTURE 10-21-2010
34. 20100264396 RING-SHAPED ELECTRODE AND MANUFACTURING METHOD FOR SAME 10-21-2010
35. 20100261329 MEMORY DEVICE HAVING WIDE AREA PHASE CHANGE ELEMENT AND SMALL ELECTRODE CONTACT AREA 10-14-2010
36. 20100237316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 09-23-2010
37. 20100227466 Nonvolatile Memory Array Having Modified Channel Region Interface 09-09-2010
38. 20100226195 INTEGRATED CIRCUIT SELF ALIGNED 3D MEMORY ARRAY AND MANUFACTURING METHOD 09-09-2010
39. 20100221888 Programmable Resistive RAM and Manufacturing Method 09-02-2010
40. 20100216279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 08-26-2010
41. 20100207095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 08-19-2010
42. 20100197119 Resistor Random Access Memory Cell Device 08-05-2010
43. 20100195378 Phase Change Memory With Dual Word Lines and Source Lines and Method of Operating Same 08-05-2010
44. 20100193859 BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 08-05-2010
45. 20100181649 POLYSILICON PILLAR BIPOLAR TRANSISTOR WITH SELF-ALIGNED MEMORY ELEMENT 07-22-2010
46. 20100177559 METHOD FOR SETTING PCRAM DEVICES - Memory devices and methods for operating such devices are described herein 07-15-2010
47. 20100177553 REWRITABLE MEMORY DEVICE - Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of 07-15-2010
48. 20100176438 DEPLETION-MODE CHARGE-TRAPPING FLASH DEVICE 07-15-2010
49. 20100176362 POLYSILICON PLUG BIPOLAR TRANSISTOR FOR PHASE CHANGE MEMORY 07-15-2010
50. 20100172183 Method and Apparatus to Suppress Fringing Field Interference of Charge Trapping NAND Memory 07-08-2010
51. 20100171188 INTEGRATED CIRCUIT DEVICE WITH SINGLE CRYSTAL SILICON ON SILICIDE AND MANUFACTURING METHOD 07-08-2010
52. 20100171086 INTEGRATED CIRCUIT MEMORY WITH SINGLE CRYSTAL SILICON ON SILICIDE DRIVER AND MANUFACTURING METHOD 07-08-2010
53. 20100165728 PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE 07-01-2010
54. 20100165711 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 07-01-2010
55. 20100157686 Method and Apparatus for Programming Nonvolatile Memory 06-24-2010
56. 20100157665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 06-24-2010
57. 20100155823 DEPLETION MODE BANDGAP ENGINEERED MEMORY 06-24-2010
58. 20100155821 STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME 06-24-2010
59. 20100151652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 06-17-2010
60. 20100148142 ALUMINUM COPPER OXIDE BASED MEMORY DEVICES AND METHODS FOR MANUFACTURE 06-17-2010
61. 20100144128 Phase Change Memory Cell and Manufacturing Method 06-10-2010
62. 20100133500 Memory Cell Having a Side Electrode Contact 06-03-2010
63. 20100120210 FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AND CHANNELS 05-13-2010
64. 20100117139 Methods of Operating Non-Volatile Memory Devices 05-13-2010
65. 20100117049 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE PLUG AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 05-13-2010
66. 20100117048 MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE AND SINGLE-CRYSTAL SEMICONDUCTOR REGIONS 05-13-2010
67. 20100110778 PHASE CHANGE MEMORY PROGRAM METHOD WITHOUT OVER-RESET 05-06-2010
68. 20100105165 MULTILEVEL-CELL MEMORY STRUCTURES EMPLOYING MULTI-MEMORY LAYERS WITH TUNGSTEN OXIDES AND MANUFACTURING METHOD 04-29-2010
69. 20100091558 Dielectric-Sandwiched Pillar Memory Device 04-15-2010
70. 20100084624 Dielectric mesh isolated phase change structure for phase change memory 04-08-2010
71. 20100072447 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 03-25-2010
72. 20100068878 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION PAD AND MANUFACTURING METHOD 03-18-2010
73. 20100067309 EFFICIENT ERASE ALGORITHM FOR SONOS-TYPE NAND FLASH 03-18-2010
74. 20100067285 NOVEL SENSING CIRCUIT FOR PCRAM APPLICATIONS 03-18-2010
75. 20100065808 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 03-18-2010
76. 20100055830 I-SHAPED PHASE CHANGE MEMORY CELL - memory device includes two electrodes vertically separated and having mutually opposed contact surfaces 03-04-2010
77. 20100054014 HIGH DENSITY RESISTANCE BASED SEMICONDUCTOR DEVICE 03-04-2010
78. 20100046285 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION 02-25-2010
79. 20100039867 Electrically Isolated Gated Diode Nonvolatile Memory 02-18-2010
80. 20100039846 Method and Apparatus for Non-Volatile Multi-Bit Memory 02-18-2010
81. 20100030775 System And Method For Storing And Retrieving Non-Text-Based Information 02-04-2010
82. 20100029062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 02-04-2010
83. 20100029042 MEMORY CELL DEVICE WITH COPLANAR ELECTRODE SURFACE AND METHOD 02-04-2010
84. 20100019221 FULLY SELF-ALIGNED PORE-TYPE MEMORY CELL HAVING DIODE ACCESS DEVICE 01-28-2010
85. 20100019215 MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE 01-28-2010
86. 20100015757 BRIDGE RESISTANCE RANDOM ACCESS MEMORY DEVICE AND METHOD WITH A SINGULAR CONTACT STRUCTURE 01-21-2010
87. 20090323409 METHODS FOR HIGH SPEED READING OPERATION OF PHASE CHANGE MEMORY AND DEVICE EMPLOYING SAME 12-31-2009
88. 20090310423 METHOD OF PROGRAMMING AND ERASING A NON-VOLATILE MEMORY ARRAY 12-17-2009
89. 20090309087 PHASE CHANGE MEMORY CELL HAVING TOP AND BOTTOM SIDEWALL CONTACTS 12-17-2009
90. 20090303794 Structure and Method of A Field-Enhanced Charge Trapping-DRAM 12-10-2009
91. 20090303774 METHODS OF OPERATING A BISTABLE RESISTANCE RANDOM ACCESS MEMORY WITH MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES 12-10-2009
92. 20090296474 PROGRAM AND ERASE METHODS WITH SUBSTRATE TRANSIENT HOT CARRIER INJECTIONS IN A NON-VOLATILE MEMORY 12-03-2009
93. 20090280611 NON-VOLATILE MEMORY SEMICONDUCTOR DEVICE HAVING AN OXIDE-NITRIDE-OXIDE (ONO) TOP DIELECTRIC LAYER 11-12-2009
94. 20090279350 BIPOLAR SWITCHING OF PHASE CHANGE DEVICE 11-12-2009
95. 20090279349 PHASE CHANGE DEVICE HAVING TWO OR MORE SUBSTANTIAL AMORPHOUS REGIONS IN HIGH RESISTANCE STATE 11-12-2009
96. 20090279343 OPERATING METHOD OF ELECTRICAL PULSE VOLTAGE FOR RRAM APPLICATION 11-12-2009
97. 20090276737 TOOL FOR CHARGE TRAPPING MEMORY USING SIMULATED PROGRAMMING OPERATIONS 11-05-2009
98. 20090262583 FLOATING GATE MEMORY DEVICE WITH INTERPOLY CHARGE TRAPPING STRUCTURE 10-22-2009
99. 20090261479 METHODS FOR PITCH REDUCTION - integrated circuit described herein includes a substrate and a plurality of lines overlying the substrate 10-22-2009
100. 20090261313 MEMORY CELL HAVING A BURIED PHASE CHANGE REGION AND METHOD FOR FABRICATING THE SAME 10-22-2009
101. 20090256184 Single Gate Nonvolatile Memory Cell With Transistor and Capacitor 10-15-2009
102. 20090256183 Single Gate Nonvolatile Memory Cell With Transistor and Capacitor 10-15-2009
103. 20090251944 MEMORY CELL HAVING IMPROVED MECHANICAL STABILITY 10-08-2009
104. 20090242880 THERMALLY STABILIZED ELECTRODE STRUCTURE 10-01-2009
105. 20090242865 MEMORY ARRAY WITH DIODE DRIVER AND METHOD FOR FABRICATING THE SAME 10-01-2009
106. 20090239358 Memory Device Manufacturing Method - method for making a memory device includes providing a dielectric material having first and second upwardly and 09-24-2009
107. 20090236743 Programmable Resistive RAM and Manufacturing Method 09-24-2009
108. 20090236639 STACKED BIT LINE DUAL WORD LINE NONVOLATILE MEMORY 09-24-2009
109. 20090219759 DOUBLE PROGRAMMING METHODS OF A MULTI-LEVEL-CELL NONVOLATILE MEMORY 09-03-2009
110. 20090213656 FLASH MEMORY HAVING INSULATING LINERS BETWEEN SOURCE/DRAIN LINES AND CHANNELS 08-27-2009
111. 20090201731 Method and Apparatus for Accessing Memory With Read Error By Changing Comparison 08-13-2009
112. 20090201725 MULTI-LEVEL MEMORY CELL PROGRAMMING METHODS 08-13-2009
113. 20090194758 HEATING CENTER PCRAM STRUCTURE AND METHODS FOR MAKING 08-06-2009
114. 20090194755 HIGH DENSITY CHALCOGENIDE MEMORY CELLS - non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side 08-06-2009
115. 20090189138 FILL-IN ETCHING FREE PORE DEVICE - memory cell includes a memory cell layer with a first dielectric layer over a bottom electrode layer 07-30-2009
116. 20090184310 MEMORY CELL WITH MEMORY ELEMENT CONTACTING AN INVERTED T-SHAPED BOTTOM ELECTRODE 07-23-2009
117. 20090175071 PHASE CHANGE MEMORY DYNAMIC RESISTANCE TEST AND MANUFACTURING METHODS 07-09-2009
118. 20090173990 STRUCTURES FOR AND METHOD OF SILICIDE FORMATION ON MEMORY ARRAY AND PERIPHERAL LOGIC DEVICES 07-09-2009
119. 20090155978 Recessed Shallow Trench Isolation - In some embodiments a memory integrated circuit has different shallow trench isolation structures in the memory 06-18-2009
120. 20090154222 OPERATION METHOD FOR MULTI-LEVEL SWITCHING OF METAL-OXIDE BASED RRAM 06-18-2009
121. 20090148981 METHOD FOR FORMING SELF-ALIGNED THERMAL ISOLATION CELL FOR A VARIABLE RESISTANCE MEMORY ARRAY 06-11-2009
122. 20090147564 PHASE CHANGE MEMORY CELL HAVING INTERFACE STRUCTURES WITH ESSENTIALLY EQUAL THERMAL IMPEDANCES AND MANUFACTURING METHODS 06-11-2009
123. 20090141555 METHOD OF PROGRAMMING AND ERASING A P-CHANNEL BE-SONOS NAND FLASH MEMORY 06-04-2009
124. 20090140230 Memory Cell Device With Circumferentially-Extending Memory Element 06-04-2009
125. 20090122588 PHASE CHANGE MEMORY CELL INCLUDING A THERMAL PROTECT BOTTOM ELECTRODE AND MANUFACTURING METHODS 05-14-2009
126. 20090108345 LDMOS Device and Method of Fabrication - are provided 04-30-2009
127. 20090104771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 04-23-2009
128. 20090103370 EFFICIENT ERASE ALGORITHM FOR SONOS-TYPE NAND FLASH 04-23-2009
129. 20090103367 ONE-TRANSISTOR CELL SEMICONDUCTOR ON INSULATOR RANDOM ACCESS MEMORY 04-23-2009
130. 20090101883 Method for manufacturing a resistor random access memory with a self-aligned air gap insulator 04-23-2009
131. 20090101879 Method for Making Self Aligning Pillar Memory Cell Device 04-23-2009
132. 20090098716 METHOD FOR MAKING A SELF-CONVERGED MEMORY MATERIAL ELEMENT FOR MEMORY CELL 04-16-2009
133. 20090098678 VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT 04-16-2009
134. 20090096017 STACKED THIN FILM TRANSISTOR, NON-VOLATILE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 04-16-2009
135. 20090095948 Programmable Resistive Memory with Diode Structure 04-16-2009
136. 20090080254 Gated Diode Nonvolatile Memory Cell Array 03-26-2009
137. 20090072216 PHASE CHANGE MEMORY CELL ARRAY WITH SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 03-19-2009
138. 20090072215 PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING 03-19-2009
139. 20090065851 OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE 03-12-2009
140. 20090061933 Multiple Interface Card In A Mobile Phone 03-05-2009
141. 20090059676 HIGH-k CAPPED BLOCKING DIELECTRIC BANDGAP ENGINEERED SONOS AND MONOS 03-05-2009
142. 20090057641 Phase Change Memory Cell With First and Second Transition Temperature Portions 03-05-2009
143. 20090046506 Method and Apparatus for Programming Nonvolatile Memory 02-19-2009
144. 20090045452 Structure and Method of Sub-Gate NAND Memory with Bandgap Engineered SONOS Devices 02-19-2009
145. 20090042335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS 02-12-2009
146. 20090040829 LATERAL POCKET IMPLANT CHARGE TRAPPING DEVICES 02-12-2009
147. 20090039416 BLOCKING DIELECTRIC ENGINEERED CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 02-12-2009
148. 20090039414 CHARGE TRAPPING MEMORY CELL WITH HIGH SPEED ERASE 02-12-2009
149. 20090034323 PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 02-05-2009
150. 20090032796 PHASE CHANGE MEMORY BRIDGE CELL - Memory devices are described along with manufacturing methods 02-05-2009
151. 20090032793 Resistor Random Access Memory Structure Having a Defined Small Area of Electrical Contact 02-05-2009
152. 20090023242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 01-22-2009
153. 20090020746 SELF-ALIGNED STRUCTURE AND METHOD FOR CONFINING A MELTING POINT IN A RESISTOR RANDOM ACCESS MEMORY 01-22-2009
154. 20090020740 RESISTIVE MEMORY STRUCTURE WITH BUFFER LAYER 01-22-2009
155. 20090016116 Method of Programming and Erasing a Non-Volatile Memory Array 01-15-2009
156. 20090014706 4F2 SELF ALIGN FIN BOTTOM ELECTRODES FET DRIVE PHASE CHANGE MEMORY 01-15-2009
157. 20090003054 DOUBLE PROGRAMMING METHODS OF A MULTI-LEVEL-CELL NONVOLATILE MEMORY 01-01-2009
158. 20080304312 RESISTANCE MEMORY WITH TUNGSTEN COMPOUND AND MANUFACTURING 12-11-2008
159. 20080291726 BANDGAP ENGINEERED SPLIT GATE MEMORY - Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a 11-27-2008
160. 20080285330 METHODS OF OPERATING A BISTABLE RESISTANCE RANDOM ACCESS MEMORY WITH MULTIPLE MEMORY LAYERS AND MULTILEVEL MEMORY STATES 11-20-2008
161. 20080282107 Method and Apparatus for Repairing Memory 11-13-2008
162. 20080274585 SPACER ELECTRODE SMALL PIN PHASE CHANGE MEMORY RAM AND MANUFACTURING METHOD 11-06-2008
163. 20080268659 HIGH TEMPERATURE METHODS FOR ENHANCING RETENTION CHARACTERISTICS OF MEMORY DEVICES 10-30-2008
164. 20080268565 THERMALLY INSULATED PHASE CHANGE MEMORY MANUFACTURING METHOD 10-30-2008
165. 20080266980 METHODS FOR CONDUCTING DOUBLE-SIDE-BIASING OPERATIONS OF NAND MEMORY ARRAYS 10-30-2008
166. 20080266979 METHODS OF BIASING A MULTI-LEVEL-CELL MEMORY 10-30-2008
167. 20080266977 METHOD FOR HIGH SPEED PROGRAMMING OF A CHARGE TRAPPING MEMORY WITH AN ENHANCED CHARGE TRAPPING SITE 10-30-2008
168. 20080266940 Air Cell Thermal Isolation for a Memory Array Formed of a Programmable Resistive Material 10-30-2008
169. 20080266933 Method and Apparatus for Refreshing Programmable Resistive Memory 10-30-2008
170. 20080259672 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 10-23-2008
171. 20080258126 Memory Cell Sidewall Contacting Side Electrode 10-23-2008
172. 20080247224 Phase Change Memory Bridge Cell with Diode Isolation Device 10-09-2008
173. 20080246014 Memory Structure with Reduced-Size Memory Element Between Memory Material Portions 10-09-2008
174. 20080205166 TRAPPING STORAGE FLASH MEMORY CELL STRUCTURE WITH INVERSION SOURCE AND DRAIN REGIONS 08-28-2008
175. 20080203375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 08-28-2008
176. 20080197334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 08-21-2008
177. 20080197333 Programmable Resistive Memory Cell with Self-Forming Gap 08-21-2008