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Ovonyx, Inc

ROCHESTER HILLS, MI US

1. 20100283029 Programmable resistance memory and method of making same 11-11-2010
2. 20100244023 Programmable resistance memory - rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other 09-30-2010
3. 20100232205 Programmable resistance memory - memory includes an interface through which it provides access to memory cells, such as phase change memory cells 09-16-2010
4. 20100182825 Programmable resistance memory - memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change 07-22-2010
5. 20100110780 Programmable resistance memory - minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET 05-06-2010
6. 20100091559 Programmable resistance memory with feedback control 04-15-2010
7. 20100059729 Apparatus and method for memory - programmable resistance memory includes a volume of programmable resistance material formed between and coupled to two 03-11-2010
8. 20100054030 Programmable resistance memory - memory includes a programmable resistance array and unipolar MOS peripheral circuitry 03-04-2010
9. 20100027328 Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States 02-04-2010
10. 20090310402 Method and apparatus for decoding memory 12-17-2009
11. 20090307410 Memory controller - provides interfaces for one or more thin film memory circuits 12-10-2009
12. 20090303784 Asymetric threshold three terminal switching device 12-10-2009
13. 20090303783 Thin film input/output - Input/Output circuitry employs thin-film switching devices to drive output signals from an integrated circuit to an external 12-10-2009
14. 20090303782 Standalone thin film memory - standalone memory device includes thin-film peripheral circuitry, including decoding circuitry 12-10-2009
15. 20090303781 Method and apparatus for thin film memory 12-10-2009
16. 20090302303 Thin film memory system - electronic system includes at least one reduced-complexity integrated circuit memory coupled to a memory controller 12-10-2009
17. 20090298222 Method for manufacturing Chalcogenide devices 12-03-2009
18. 20090230505 Self-aligned memory cells and method for forming 09-17-2009
19. 20090213645 Method and apparatus for accessing a multi-mode programmable resistance memory 08-27-2009
20. 20090213644 Method and apparatus for accessing a multi-mode programmable resistance memory 08-27-2009
21. 20090207645 Method and apparatus for accessing a bidirectional memory 08-20-2009
22. 20090166601 Non-volatile programmable variable resistance element 07-02-2009
23. 20090147565 Method and apparatus for accessing a phase-change memory 06-11-2009
24. 20090140229 Active material devices with containment layer 06-04-2009
25. 20090116280 Accessing a phase change memory - memory employs a low-level current source to access a phase change memory cell 05-07-2009
26. 20090114898 Method and apparatus for reducing programmed volume of phase change memory 05-07-2009
27. 20090111212 Method and apparatus for chalcogenide device formation 04-30-2009
28. 20090109737 Method of restoring variable resistance memory device 04-30-2009
29. 20090057645 Memory element with improved contacts - phase-change memory element comprising a phase-change memory material, a first electrical contact and a second 03-05-2009
30. 20090034325 Programmable matrix array with chalcogenide material 02-05-2009
31. 20080272807 Thin film logic device and system - Thin film logic circuits employ thin-film switching devices to execute complementary logic functions 11-06-2008
32. 20080225625 Page mode access for non-volatile memory arrays 09-18-2008
33. 20080224120 Phase change device with offset contact - programmable resistance memory combines multiple cells into a block that includes one or more shared 09-18-2008
34. 20080220560 Programmable resistance memory element and method for making same 09-11-2008
35. 20080211539 Programmable matrix array with phase-change material 09-04-2008
36. 20080210926 Three-dimensional phase-change memory array 09-04-2008