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Ovonyx, Inc
ROCHESTER HILLS, MI US
1. 20090230505 Self-aligned memory cells and method for forming 09-17-20092. 20090213645 Method and apparatus for accessing a multi-mode programmable resistance memory 08-27-2009
3. 20090213644 Method and apparatus for accessing a multi-mode programmable resistance memory 08-27-2009
4. 20090207645 Method and apparatus for accessing a bidirectional memory 08-20-2009
5. 20090166601 Non-volatile programmable variable resistance element 07-02-2009
6. 20090147565 Method and apparatus for accessing a phase-change memory 06-11-2009
7. 20090140229 Active material devices with containment layer 06-04-2009
8. 20090116280 Accessing a phase change memory - memory employs a low-level current source to access a phase change memory cell 05-07-2009
9. 20090114898 Method and apparatus for reducing programmed volume of phase change memory 05-07-2009
10. 20090111212 Method and apparatus for chalcogenide device formation 04-30-2009
11. 20090109737 Method of restoring variable resistance memory device 04-30-2009
12. 20090057645 Memory element with improved contacts - phase-change memory element comprising a phase-change memory material, a first electrical contact and a second 03-05-2009
13. 20090034325 Programmable matrix array with chalcogenide material 02-05-2009
14. 20080272807 Thin film logic device and system - Thin film logic circuits employ thin-film switching devices to execute complementary logic functions 11-06-2008
15. 20080225625 Page mode access for non-volatile memory arrays 09-18-2008
16. 20080224120 Phase change device with offset contact - programmable resistance memory combines multiple cells into a block that includes one or more shared 09-18-2008
17. 20080220560 Programmable resistance memory element and method for making same 09-11-2008
18. 20080211539 Programmable matrix array with phase-change material 09-04-2008
19. 20080210926 Three-dimensional phase-change memory array 09-04-2008