Investigation of charge transport in thin, doped sexithiophene crystals by conducting probe atomic force microscopy

Article Abstract:

The electrical transport characteristics of thin doped sexithiophene (6T) crystallites that was prepared on Au and SiO2 substrates by vacuum sublimation was investigated using conducting probe atomic force microscopy. An unexpected dependence of the conductance on crystalline thickness was found from the measurements on Au. Conductance measurements revealed a nonohmic behavior that may developed from an energy barrier to charge injection at the Au-6T interface.

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Field effect transport measurements on single grains of sexithiophene: Role of the contacts

Article Abstract:

A study of the contact properties of field effect transistors (FETs) based on single grains of the organic semiconductor sexithiophene ('6T, Egap ~2.3 ev) is presented. Results reveal that the device characteristics of 6T grain FETs, reflect the properties of the hole-injecting contact, which behaves as a reverse-biased diode.

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Field effect conductance measurements on thin crystals of sexithiophene

Article Abstract:

Field effect conductance measurements have been undertaken on individual crystals of the organic semiconductor sexithiophene (6T). It has been possible to show an approach for contacting single-crystal monolayers and multilayers of vapor deposited 6T molecules.

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