Cycloaddition chemistry on silicon(OO1) surfaces: the adsorption of azo-tert-butane

Article Abstract:

X-ray photoelectron spectroscopy is used in studying the structure and bonding of azo-tert-butane (ATB) adsorbed on a Si(001) surface. It will be demonstrated that bonding of alkenes to Si(001) can be generalized for other unsaturated species. Adsorption onto a 130 K surface occurs with no bond cleavage although the formation of a completely ordered layer at room temperature is inhibited by slight cleavage of C-H bonds. Results indicate ATB bonds to the Si(001) surface through an interaction of the pi bond of the azo group with the pi bonds of Si-Si dimers. This results in the formation of two new Si-N sigma bonds.

author: Hamers, Robert J., Ellison, Mark D., Liu, Hongbing, Hovis, Jennifer S.
Azo compounds

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Voltage-dependent STM images of covalently bound molecules on Si(100)

Article Abstract:

Scanning tunneling microscopy is used in studying voltage-dependent variations in images of organic molecules chemisorbed on silicon. Substrates were obtained from Si(100) wafers and rinsed in methanol. The substrates are then mounted on a tungsten holder with tantalum clips and silicon spacers. A 15-min ultraviolet-ozone treatment is used in oxidizing the surface contaminants. Results indicate that only surface states due to silicon dimers can be observed at small negative bias. The molecules are seen as protrusions with the application of more negative bias.

author: Hamers, Robert J., Padowitz, David F.
Usage, Molecular structure, Scanning tunneling microscopy, Surfaces (Physics), Olefins, Alkenes

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Adsorption of phenyl isothiocyanate on Si(001): a 1,2-dipolar surface addition reaction

Article Abstract:

Research was conducted to examine the adsorption of phenyl isothiocyanate on silicon (001) surfaces via X-ray photoelectron spectroscopy, scanning tunneling microscopy, Fourier transform infrared spectroscopy and ab initio measurements. Results provide evidence that adsorption onto the Si surface takes place in a highly selective manner. Findings also indicate that the adsorption involves the interaction of the N and C atoms of the N=C=S group with the Si=Si dimer, creating a four-member Si2NC ring at the interface.

author: Hamers, Robert J., Ellison, Mark D.
Research, Gases, Gas absorption, Gas adsorption

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subjects list: Analysis, Adsorption, Surface chemistry, Silicon
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