Atomic layer deposition growth reactions of Al2O3 on Si (100)-2x1

Article Abstract:

The energetics and atomic details of the atomic layer deposition (ALD) of Al2O3 growth reactions in the early stages of deposition on the Si (100)-2x1 surface are investigated. Careful comparison of the reaction enthalpies suggests a small reactivity dependence on neighboring -OH groups, activating and suppressing the Al- and O-deposition ALD half-reactions respectively.

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Thin film growth related adsorption study of Al and O ions on an alpha-Al2O3 surface

Article Abstract:

The surface reactivity of alphs-Al2O3 (0001) is investigated using density functional theory. Further, the adsorption process of Al(super +), Al(super 2+), Al(super 3+), and O(super +) are studied in order to identify possible preferential adsorption sites during thin film growth.

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The effect of Al2O3 barrier layers in TiO2/dye/CuSCN photovoltaic cells explored by recombination and DOS characterization using transient photovoltage measurements

Article Abstract:

Solid-state dye-sensitized solar cells of the type TiO2/dye/CuSCN are made with thin Al2O3 barriers between the TiO2 and the dye. It is further noted that the recombination current in these cells cannot be calculated from the total charge times the first order rate constant.

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