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The physics and device applications of epitaxially grown Si and si1-xGex heterostructures

Article Abstract:

A great deal of progress has been made in recent years in the epitaxial growth of Si and Si1-xGex, the Si alloy, resulting in innovations in high-performance devices. If Si heterojunction technology can be transferred into analogue and digital integrated circuits, it is hoped that the technology will be successful in the long term. There is a need for an effective low thermal budget oxidation and isolation and implant activation process to be developed. Improved performance pMOS transistors in CMOS integrated circuits and the use of narrow Si1-xGex layers are expected to be short term successes.

Innovations, Semiconductors

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An introduction to chaotic signal processing

Article Abstract:

The identification of chaos in a time series, together with dynamics modelling, offers applications in noise reduction, signal extraction and chaotic signal processing. Chaotic systems are analysed and the means of extracting a time series' underlying dynamics is presented. The basic concepts are highlighted with the use of non-linear dynamical systems-derived time series.

Usage, Chaos theory, Chaotic systems, Signal processing

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Infra-red imaging using quantum well photodetectors

Article Abstract:

Band structure engineering in optoelectronics can be conducted through epitaxial crystal growth processes, as is indicated by the example of a GaAs-based quantum well infra-red detector. It is expected that quantum gain and efficiency can be improved. The detector could potentially be used for high-performance thermal imaging.

Infrared technology

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